5962-99560

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Drawing updated to reflect current requirements. - gt
02-06-17
Raymond Monnin
B
Remove class M requirements throughout. Update paragraphs to current
MIL-PRF-38535 requirements. - drw
14-07-07
Charles F. Saffle
C
Add device type 03 and 04. Delete figure 4 radiation exposure circuit and
paragraph 4.4.4.2 Single event phenomena (SEP). Delete device class M
references. Add paragraph 3.2.5. - ro
15-04-14
Charles F. Saffle
D
Make changes to the IIL and IIH maximum test limits for device types 01 and 02
as specified under Table I. - ro
15-06-02
Charles F. Saffle
E
Add device type 05. Make change to Supply voltage (VS) limit and footnote 4/
as specified under paragraph 1.3. Make change to JC and JA limits and test
measurement. - ro
15-09-03
Charles F. Saffle
F
Add device type 06. - ro
16-04-21
Charles F. Saffle
REV
SHEET
REV
F
F
F
F
F
SHEET
15
16
17
18
19
REV STATUS
REV
F
F
F
F
F
F
F
F
F
F
F
F
F
F
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PMIC N/A
PREPARED BY
RICK OFFICER
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.landandmaritime.dla.mil
CHECKED BY
RAJESH PITHADIA
APPROVED BY
RAYMOND MONNIN
DRAWING APPROVAL DATE
99-06-02
REVISION LEVEL
F
MICROCIRCUIT, DIGITAL-LINEAR, RADIATION
HARDENED DUAL NON-INVERTING MOSFET
DRIVER, MONOLITHIC SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-99560
1 OF 19
5962-E329-16
1. SCOPE
1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space
application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and
lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation
Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the
manufacturer’s Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended
application.
1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
99560
RHA
designator
(see 1.2.1)
01
V
X
C
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and
are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-4424RH
02
HS-4424BRH
03
HS-4424EH
04
HS-4424BEH
05
HS-4424DRH
06
HS-4424DEH
Circuit function
Radiation hardened dual non-inverting
MOSFET drivers with < 10 V lockout voltage
Radiation hardened dual non-inverting
MOSFET drivers with < 7.5 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET drivers with < 10 V lockout voltage
Radiation hardened dual non-inverting
MOSFET drivers with < 7.5 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET drivers with < 8.0 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET drivers with < 8.0 V lockout
voltage
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Q, V
T
Device requirements documentation
Certification and qualification to MIL-PRF-38535
Certification and qualification to MIL-PRF-38535 with performance as specified
in the device manufacturers approved quality management plan.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
2
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
X
Descriptive designator
CDFP4-F16
Terminals
Package style
16
Flat pack
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V.
1.3 Absolute maximum ratings. 1/
Supply voltage (VS) ....................................................................................................... 20 V
Input voltage range (VIN) ..............................................................................................
Output short circuit duration (single supply) ..................................................................
Maximum junction temperature (TJ) ..............................................................................
Maximum storage temperature .....................................................................................
Maximum lead temperature (soldering 10 seconds) .....................................................
Thermal resistance, junction-to-case (JC) ...................................................................
-0.3 V to +V 2/
Continuous 3/
175C
-65C to +150C
265C
5C/W 4/
Thermal resistance, junction-to-ambient (JA) .............................................................. 34C/W 4/
1.4 Recommended operating conditions.
Supply voltage range (VS) :
Device types 01, 02, 03, 04 .......................................................................................
Device types 05 and 06 .............................................................................................
Low voltage lockout voltage:
Device types 01 and 03 .............................................................................................
Device types 02 and 04 .............................................................................................
Device types 05 and 06 .............................................................................................
Operating temperature range ........................................................................................
12 V to 18 V
8 V to 18 V
< 10.0 V
< 7.5 V
< 8.0 V
-55C to +125C
1.5 Radiation features.
Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):
Device types 01 and 02:
Device classes Q and V ........................................................................................
Device class T ......................................................................................................
Device types 03, 04, and 06 ......................................................................................
Device type 05 ...........................................................................................................
Maximum total dose available (dose rate  0.01 rad(Si)/s):
Device types 03, 04, and 06 ..................................................................................
300 krads(Si)
100 krads(Si)
300 krads(Si)
300 krads(Si)
5/
5/
6/
5/
50 krads(Si) 6/
______
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ Inputs must not go more negative than -0.3 V.
3/ Short circuit from the output to VS can cause excessive heating and eventual destruction.
4/
5/
6/
JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct
attach” features. For JC, the “case temperature” location is the center of the package underside.
Device types 01, 02, and 05 may be dose rate sensitive in a space environment and may demonstrate enhanced low
dose rate effects. Device types 01, 02, and 05 radiation end point limits for the noted parameters are guaranteed only for
the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for class Q
or V and 100 krads(Si) for class T.
Device types 03, 04, and 06 radiation end point limits for the noted parameters are guaranteed only for the conditions as
specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a
maximum total dose of 50 krads(Si).
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with
MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q, T and V.
3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2.
3.2.4 Truth table. The truth table shall be as specified in figure 3.
3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document
revision level control and shall be made available to the preparing and acquiring activity upon request.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
case operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
4
TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions 1/
-55C  TC  +125C
unless otherwise specified
ICCSB
VS = 18 V, inputs = 0 V
Group A
subgroups
Device
type
1
1
01,02,
03,04,
05,06
1
05,06
Limits
Min
Power supply current, low
low
2,3
M,D,P,L,R,F 2/
VS = 8 V, inputs = 0 V
M,D,P,L,R,F 2/
Power supply current, high
ICCSB
high
VS = 8 V, inputs = 8 V
M,D,P,L,R,F 2/
Input current, low
IIL
VS = 18 V
VS = 8 V
M,D,P,L,R,F 2/
Input current, high
IIH
4.0
1
1
05,06
3.5
VS = 8 V
M,D,P,L,R,F 2/
Voltage output
VOL,
4.0
1
4.0
VOH
M,D,P,L,R,F 2/
5
10
1
01,02,
03,04,
05,06
1
05,06
5
10
1
10
5
10
1
01,02,
03,04,
05,06
1
05,06
5
A
10
2,3
10
1
10
01,02,
03,04
A
10
2,3
VS –
0.75
0.8
2,3
VS –
0.75
0.8
1
VS –
0.75
0.8
1
VS = 12 V
mA
4.0
2,3
2,3
M,D,P,L,R,F 2/
3.5
01,02,
03,04,
05,06
1
VS = 18 V
3.5
4.0
2,3
M,D,P,L,R,F 2/
4.0
1
1
mA
4.0
4.0
2,3
M,D,P,L,R,F 2/
Max
3.5
2,3
1
VS = 18 V, inputs = 18 V
Unit
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
5
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55C  TC  +125C
unless otherwise specified
Group A
subgroups
Device
type
unless otherwise specified
Voltage output high
VOH
Min
1
VS = 8 V, IOUT = 5 mA
M,D,P,L,R,F 2/
VS = 12 V, IOUT = 5 mA,
Limits
05,06
Unit
Max
VS –
0.75
2,3
VS –
0.90
1
VS –
0.90
1
VS –
0.75
2,3
VS –
0.75
1
VS –
0.75
1
VS –
0.95
2,3
VS – 1.1
1
VS – 1.1
V
VS = 18 V, IOUT = 5 mA
M,D,P,L,R,F 2/
VS = 8 V, IOUT = 50 mA,
VS = 12 V, IOUT = 50 mA,
VS = 18 V, IOUT = 50 mA
M,D,P,L,R,F 2/
Voltage output low
VOL
1,2,3
VS = 8 V, IOUT = 5 mA,
05,06
0.8
V
VS = 12 V, IOUT = 5 mA,
VS = 18 V, IOUT = 5 mA
M,D,P,L,R,F 2/
1
0.8
VS = 8 V, IOUT = 50 mA,
1
0.95
VS = 12 V, IOUT = 50 mA,
2,3
1.1
VS = 18 V, IOUT = 50 mA
M,D,P,L,R,F 2/
Input voltage
1
1
VIL,
VS = 12 V,
VIH
limits applied during
functional test
M,D,P,L,R,F 2/
1.1
01,02,
03,04
3.0
0.4
2,3
3.5
0.4
1
3.5
0.4
V
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
6
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions 1/
-55C  TC  +125C
unless otherwise specified
Group A
subgroups
Device
type
unless otherwise specified
Input voltage high threshold
VIH
Limits
Min
VS = 8 V,
1
05,06
VS = 12 V,
2,3
3.1
1
3.1
Unit
Max
3.0
V
VS = 18 V
M,D,P,L,R,F 2/
Input voltage low threshold
VIL
1,2,3
VS = 8 V,
05,06
0.8
V
VS = 12 V,
VS = 18 V
M,D,P,L,R,F 2/
Input voltage threshold
hysteresis
VIHYS
VS = 8 V,
1
0.8
1
05,06
7,8A,8B
01, 02,
03, 04
100
mV
VS = 12 V,
VS = 18 V
Functional test
FT
VS = 12 V, VS = 18 V,
See 4.4.1c
M,D,P,L,R,F 2/
Rising undervoltage lockout
UVLOR
1
M,D,P,L,R,F 2/
Falling undervoltage lockout
UVLOF
tPHL
05,06
7.2
7.8
2,3
6.9
7.95
1
6.9
7.95
7.1
7.75
2,3
6.8
7.9
1
6.8
7.9
1
M,D,P,L,R,F 2/
Propagation delay, low
7
05,06
9
VS = 12 V, CL = 4300 pF
10,11
M,D,P,L,R,F 2/
01,02,
03,04
9
V
V
250
ns
350
350
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
7
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/
-55C  TC  +125C
unless otherwise specified
tPHL
VS = 8 V, CL = 4300 pF
Group A
subgroups
Device
type
9
05,06
Limits
Min
Propagation delay, low
M,D,P,L,R,F 2/
VS = 12 V, CL = 4300 pF
M,D,P,L,R,F 2/
VS = 18 V, CL = 4300 pF
M,D,P,L,R,F 2/
Propagation delay, high
tPLH
400
400
9
250
10,11
9
350
350
9
200
10,11
9
300
9
M,D,P,L,R,F 2/
VS = 12 V, CL = 4300 pF
M,D,P,L,R,F 2/
VS = 18 V, CL = 4300 pF
M,D,P,L,R,F 2/
Response time, rise
TR
01,02,
03,04
350
05,06
300
9
400
9
250
10,11
350
9
350
9
200
10,11
300
9
300
01,02,
03,04
05,06
75
ns
95
95
VS = 8 V, CL = 4300 pF,
9
VS = 12 V, CL = 4300 pF,
10,11
95
9
95
VS = 18 V, CL = 4300 pF
M,D,P,L,R,F 2/
ns
350
400
10,11
9
M,D,P,L,R,F 2/
250
10,11
9
VS = 12 V, CL = 4300 pF
ns
300
9
VS = 8 V, CL = 4300 pF
300
9
10,11
M,D,P,L,R,F 2/
Max
10,11
9
VS = 12 V, CL = 4300 pF
Unit
75
See footnotes at end of table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
8
TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions 1/
-55C  TC  +125C
unless otherwise specified
TF
VS = 12 V,
Group A
subgroups
Device
type
Limits
Min
Response time, fall
9
10,11
CL = 4300 pF
01,02,
03,04
9
M,D,P,L,R,F 2/
Unit
Max
75
95
95
VS = 8 V, CL = 4300 pF,
9
VS = 12 V, CL = 4300 pF,
10,11
95
9
95
VS = 18 V, CL = 4300 pF
M,D,P,L,R,F 2/
ns
05,06
75
1/
VS = 12 V to 18 V for device types 01, 02, 03, and 04. VS = 8 V to 18 V for device types 05 and 06.
2/
RHA device types 01, 02, and 05 supplied to this drawing will meet all levels M, D, P, L, R and F of irradiation for device
class Q or V and levels M, D, P, L, and R of irradiation for device class T. However, device types 01, 02 and 05 are only
tested at the “F” level for device class Q or V and the “R” level for device class T in accordance with MIL-STD-883
method 1019 condition A (see 1.5 herein).
RHA device types 03, 04, and 06 supplied to this drawing will meet all levels M, D, P, L, R, and F of irradiation for
condition A and irradiation of M, D, P, and L levels for condition D. However, device types 03, 04, and 06 are only tested
at the “F” level in accordance with MIL-STD-883, method 1019, condition A, and tested at the “L” level in condition D
(see 1.5 herein).
Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation
electrical measurements for any RHA level, TA = +25C.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.
3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required
in MIL-PRF-38535.
3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance
submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the
manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535
shall be provided with each lot of microcircuits delivered to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
9
Device types
01, 02, 03, 04, 05, and 06
Case outline
X
Terminal number
Terminal symbol
1
NC
2
INPUT A
3
NC
4
GND
5
GND
6
NC
7
INPUT B
8
NC
9
NC
10
OUTPUT B
11
OUTPUT B
12
VS
13
VS
14
OUTPUT A
15
OUTPUT A
16
NC
FIGURE 1. Terminal connections.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
10
FIGURE 2. Logic diagram.
INPUT A
OUTPUT A
1
1
0
0
INPUT B
OUTPUT B
1
1
0
0
FIGURE 3. Truth table.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
11
4. VERIFICATION
4.1 Sampling and inspection. For device classes Q, and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan, including screening (4.2),
qualification (4.3), and conformance inspection (4.4). The modification in the QM plan shall not affect the form, fit, or function as
described herein. For device class T, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 and the
device manufacturer’s QM plan including screening, qualification, and conformance inspection. The performance envelope and
reliability information shall be as specified in the manufacturer’s QM plan.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class T, screening shall be in
accordance with the device manufacturer’s Quality Management (QM) plan, and shall be conducted on all devices prior to
qualification and technology conformance inspection.
4.2.1 Additional criteria for device classes Q, T and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
For device classes Q, T and V interim and final electrical test parameters shall be as specified in table IIA herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, Appendix B.
4.3 Qualification inspection for device classes Q, T and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Qualification inspection for device class T shall be in accordance with the device
manufacturer’s Quality Management (QM) plan. Inspections to be performed shall be those specified in MIL-PRF-38535 and
herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections, and as specified herein. Technology conformance inspection
for class T shall be in accordance with the device manufacturer’s Quality Management (QM) plan.
4.4.1 Group A inspection.
a.
Tests shall be as specified in table IIA herein.
b.
Subgroups 4, 5, and 6 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
For device classes Q and V, subgroups 7 and 8 shall include verifying the functionality of the device.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.2.1 Additional criteria for device classes Q, T and V. The steady-state life test duration, test condition and test
temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with
MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in
accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test
circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1005 of MIL-STD-883.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
12
TABLE IIA. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
Device
class T
As specified
in QM plan
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
1,7
1,7
1,2,3,7,8A, 1/
8B,9,10,11
1,2,3, 2/ 3/
7,8A,8B,9,10,
11
As specified
in QM plan
Group A test
requirements (see 4.4)
1,2,3,7,8A,8B,
9,10,11
1,2,3,7,8A,
8B,9,10,11
As specified
in QM plan
Group C end-point electrical
parameters (see 4.4)
1,2,3,7,8A,8B,
9,10,11
1,2,3,7,8A,
8B,9,10,11
As specified
in QM plan
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
1,7,9
1,7,9
As specified
in QM plan
1,7,9
1,7,9
As specified
in QM plan
1/ PDA applies to subgroup 1 and 7.
2/ PDA applies to subgroups 1, 7, and ’s.
3/ Delta limits (see table IIB) shall be required and the delta values shall be computed with
reference to the zero hour electrical parameters (see table I).
TABLE IIB. Burn-in delta parameters
Parameters
Power supply current
Input current
Symbol
Min
TA = +25C
Max
Units
ICCSB low
175
A
ICCSB high
175
A
IIL
1
A
IIH
1
A
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535 and the end-point electrical
parameters shall be as specified in table IIA herein.
4.4.4.1 Group E inspection for device class T. For device class T, the RHA requirements shall be in accordance with the
class T radiation requirements of MIL-PRF-38535. End-point electrical parameters shall be as specified in table IIA herein.
4.4.4.2 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition A and as specified herein for device types 01, 02, 03, 04, 05, and 06. In addition, for device types 03,
04, and 06, a low dose rate test shall be performed in accordance with MIL-STD-883 method 1019, condition D and as
specified herein.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
13
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q, T and V.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime-VA, telephone (614) 692-8108.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime-VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q, T and V. Sources of supply for device classes Q, T and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed in MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see 3.6 herein) to DLA Land and Maritime-VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
14
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99560
A.1 SCOPE
A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified
Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers
approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using
chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of
military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number
(PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN.
A.1.2 PIN. The PIN is as shown in the following example:
5962
F
Federal
stock class
designator
\
RHA
designator
(see A.1.2.1)
99560
01
V
9
A
Device
type
(see A.1.2.2)
Device
class
designator
(see A.1.2.3)
Die
code
Die
details
(see A.1.2.4)
/
\/
Drawing number
A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash
(-) indicates a non-RHA die.
A.1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
HS-4424RH
02
HS-4424BRH
03
HS-4424EH
04
HS-4424BEH
05
HS-4424DRH
06
HS-4424DEH
Circuit function
Radiation hardened dual non-inverting
MOSFET driver with  10 V lockout voltage
Radiation hardened dual non-inverting
MOSFET driver with  7.5 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET driver with  10 V lockout voltage
Radiation hardened dual non-inverting
MOSFET driver with  7.5 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET driver with  8.0 V lockout
voltage
Radiation hardened dual non-inverting
MOSFET driver with  8.0 V lockout
voltage
A.1.2.3 Device class designator.
Device class
Q or V
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
Device requirements documentation
Certification and qualification to the die requirements of MIL-PRF-38535
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
15
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99560
A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding
pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product
and variant supplied to this appendix.
A.1.2.4.1 Die physical dimensions.
Die type
Figure number
01
02
03
04
05
06
A-1
A-1
A-1
A-1
A-1
A-1
A.1.2.4.2 Die bonding pad locations and electrical functions.
Die type
Figure number
01
02
03
04
05
06
A-1
A-1
A-1
A-1
A-1
A-1
A.1.2.4.3 Interface materials.
Die type
Figure number
01
02
03
04
05
06
A-1
A-1
A-1
A-1
A-1
A-1
A.1.2.4.4 Assembly related information.
Die type
Figure number
01
02
03
04
05
06
A-1
A-1
A-1
A-1
A-1
A-1
A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details.
A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
16
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99560
A.2 APPLICABLE DOCUMENTS.
A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a
part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in
the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARD
MIL-STD-883 - Test Method Standard Microcircuits.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 - List of Standard Microcircuit Drawings.
MIL-HDBK-780 - Standard Microcircuit Drawings.
(Copies of these documents are available online at http://quicksearch.dla.mil or from the Standardization Document Order
Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the
text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
A.3 REQUIREMENTS
A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein.
A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V.
A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1.
A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as
specified in A.1.2.4.2 and on figure A-1.
A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1.
A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1.
A.3.2.5 Truth table. The truth table shall be as defined in paragraph 3.2.4 herein.
A.3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.5 herein.
A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this
document.
A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing
sufficient to make the packaged die capable of meeting the electrical performance requirements in table I.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
17
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99560
A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a
customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed
in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535.
A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a
QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of
compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall
affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the
requirements herein.
A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535
shall be provided with each lot of microcircuit die delivered to this drawing.
A.4 VERIFICATION
A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance
with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM
plan shall not affect the form, fit, or function as described herein.
A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the
manufacturer’s QM plan. As a minimum, it shall consist of:
a.
Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007.
b.
100% wafer probe (see paragraph A.3.4 herein).
c.
100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the
alternate procedures allowed in MIL-STD-883, method 5004.
A.4.3 Conformance inspection.
A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see
A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of
packaged die shall be as specified in table IIA herein. Group E tests and conditions are as specified in paragraphs 4.4.4,
4.4.4.1, and 4.4.4.2 herein.
A.5 DIE CARRIER
A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or
as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and
electrostatic protection.
A.6 NOTES
A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with
MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and
logistics purposes.
A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio,
43218-3990 or telephone (614)-692-0540.
A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in
MIL-HDBK-103 and QML-38535. The vendors listed within MIL-HDBK-103 and QML-38535 have submitted a certificate of
compliance (see A.3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
18
APPENDIX A
APPENDIX A FORMS A PART OF SMD 5962-99560
NOTE: Pad numbers reflect terminal numbers when placed in case outline X (see figure 1).
Die physical dimensions.
Die size: 3370 microns x 4890 microns.
Die thickness: 19  1 mils.
Interface materials.
Top metallization: Al Si Cu 16.0 kÅ 2 kÅ
Backside metallization: None
Glassivation.
Type: PSG
Thickness: 8.0 kÅ 1.0 kÅ
Substrate: DI (dielectric isolation)
Assembly related information.
Substrate potential: Unbiased
Special assembly instructions: None
FIGURE A-1. Die bonding pad locations and electrical functions.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-99560
A
REVISION LEVEL
F
SHEET
19
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 16-04-21
Approved sources of supply for SMD 5962-99560 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime-VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.landandmaritime.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962F9956001VXC
34371
HS9-4424RH-Q
5962F9956001QXC
34371
HS9-4424RH-8
5952R9956001TXC
34371
HS9-4424RH-T
5962F9956001V9A
34371
HS0-4424RH-Q
5962F9956002VXC
34371
HS9-4424BRH-Q
5962F9956002QXC
34371
HS9-4424BRH-8
5962R9956002TXC
34371
HS9-4424BRH-T
5962F9956002V9A
34371
HS0-4424BRH-Q
5962F9956003VXC
34371
HS9-4424EH-Q
5962F9956003V9A
34371
HS0-4424EH-Q
5962F9956004VXC
34371
HS9-4424BEH-Q
5962F9956004V9A
34371
HS0-4424BEH-Q
5962F9956005VXC
34371
HS9-4424DRH-Q
5962F9956005V9A
34371
HS0-4424DRH-Q
5962F9956006VXC
34371
HS9-4424DEH-Q
5962F9956006V9A
34371
HS0-4424DEH-Q
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
34371
Vendor name
and address
Intersil Corporation
1650 Robert J. Conlan Blvd. NE
Palm Bay, FL 32905-3406
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.