HA-5002/883 ® Monolithic, Wideband, High Slew Rate, High Output Current Buffer October 26, 2004 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5002/883 is a monolithic, wideband, high slew rate, high output current, buffer amplifier. Utilizing the advantages of the Harris Dielectric Isolation technologies, the HA-5002/883 current buffer offers 1300V/µs slew rate typically and 1000V/µs minimum with 110MHz of bandwidth. The ±100mA minimum output current capability is enhanced by a 3Ω output impedance. • Voltage Gain (RL = 1kΩ). . . . . . . . . . . . . . . . . . 0.98 (Min) 0.995 (Typ) (RL = 100Ω) . . . . . . . . . . . . . . . . 0.96 (Min) 0.971 (Typ) The monolithic HA-5002/883 will replace the hybrid LH0002 with corresponding performance increases. These characteristics range from the 3MΩ (typ) input impedance to the increased output voltage swing. Monolithic design technologies have allowed a more precise buffer to be developed with more than an order of magnitude smaller gain error. The voltage gain is 0.98 guaranteed minimum with a 1kΩ load and 0.96 minimum with a 100Ω load. • High Input Impedance . . . . . . . . . . . . . . . . . 1.5MΩ (Min) 3MΩ (Typ) • Low Output Impedance . . . . . . . . . . . . . . . . . . 5Ω (Max) 3Ω (Typ) • Very High Slew Rate . . . . . . . . . . . . . . . .1000V/µs (Min) 1300V/µs (Typ) • Wide Small Signal Bandwidth. . . . . . . . . .110MHz (Typ) The HA-5002/883 will provide many present hybrid users with a higher degree of reliability and at the same time increase overall circuit performance. • High Output Current . . . . . . . . . . . . . . . . . 100mA (Min) • High Pulsed Output Current . . . . . . . . . . . 400mA (Max) • Monolithic Dielectric Isolation Construction Ordering Information • Replaces Hybrid LH0002 PART NUMBER Applications • Line Driver HA4-5002/883 • Data Acquisition • 110MHz Buffer TEMPERATURE RANGE -55oC to +125oC PACKAGE 20 Lead Ceramic LCC • High Power Current Booster • High Power Current Source • Sample and Holds • Radar Cable Driver • Video Products Pinout V1 + NC 3 2 1 20 19 NC NC OUT HA-5002/883 (CLCC) TOP VIEW NC 4 18 NC V2 - 5 17 V2 + NC 6 16 NC NC 7 15 NC NC 8 14 NC NC V1 - IN NC NC 9 10 11 12 13 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2004. All Rights Reserved 1 Spec Number 511017-883 FN3705.2 HA-5002/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equal to Supplies Peak Output Current (50ms On, 1s Off) . . . . . . . . . . . . . . . . . .±400mA Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <4000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC Ceramic LCC Package . . . . . . . . . . . . . . 80oC/W 30oC/W Package Power Dissipation Limit at +75oC for TJ ≤ +175oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Package Power Dissipation Derating Factor Above +75oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ΝΟΤΕΣ: 1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details. Operating Conditions RL ≥ 100Ω Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Input Offset Voltage SYMBOL VIO1 VIO2 Input Bias Current IB1 IB2 Voltage Gain 1 +AV1 -AV1 Voltage Gain 2 Voltage Gain 3 Voltage Gain 4 CONDITIONS GROUP A SUBGROUPS VSUP = ±15V MIN MAX UNITS +25 C -20 20 mV 2, 3 +125oC, -55oC -30 30 mV o 1 +25 C -20 20 mV 2, 3 +125oC, -55oC -30 30 mV 1 +25oC -7 7 µA 2, 3 +125oC, -55oC -10 10 µA 1 +25oC -7 7 µA 2, 3 +125oC, -55oC -10 10 µA 1 +25oC 0.98 - V/V VSUP = ±15V, RS = 1kΩ VSUP = ±12V, RS = 1kΩ VSUP = ±12V, RL = 1kΩ, VIN = -10V o 1 VSUP = ±12V VSUP = ±12V, RL = 1kΩ, VIN = 10V TEMPERATURE o o 2, 3 +125 C, -55 C 0.98 - V/V 1 +25oC 0.98 - V/V o o 2, 3 +125 C, -55 C 0.98 - V/V +AV2 VSUP = ±12V, RL = 100Ω, VIN = 10V 1 +25oC 0.96 - V/V -AV2 VSUP = ±12V, RL = 100Ω, VIN = -10V 1 +25oC 0.96 - V/V +AV3 VSUP = ±15V, RL = 100Ω, VIN = 10V 1 +25oC 0.96 - V/V -AV3 VSUP = ±15V, RL = 100Ω, VIN = -10V 1 +25oC 0.96 - V/V +AV4 VSUP = ±15V, RL = 1kΩ, VIN = +10V 1 +25oC 0.99 - V/V 2, 3 +125oC, -55oC 0.99 - V/V 1 +25oC 0.99 - V/V 2, 3 +125oC, -55oC 0.99 - V/V -AV4 VSUP = ±15V, RL = 1kΩ, VIN = -10V Spec Number 2 511017-883 HA-5002/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified. LIMITS PARAMETERS Output Voltage Swing SYMBOL +VOUT1 -VOUT1 +VOUT2 -VOUT2 +VOUT3 -VOUT3 Output Current +IOUT1 -IOUT1 +IOUT2 -IOUT2 Power Supply Rejection Ratio +PSRR1 -PSRR1 +PSRR2 -PSRR2 CONDITIONS VSUP = ±15V, RL = 100Ω, VIN = +15V VSUP = ±15V, RL = 100Ω, VIN = -15V VSUP = ±15V, RL = 1kΩ, VIN = +15V VSUP = ±15V, RL = 1kΩ, VIN = -15V VSUP = ±12V, RL = 1kΩ, VIN = +12V VSUP = ±12V, RL = 1kΩ, VIN = -12V VSUP = ±15V, VOUT = +10V VSUP = ±15V, VOUT = -10V VSUP = ±12V, VOUT = +10V VSUP = ±12V, VOUT = -10V ∆VSUP = ±5V, V+ = +20V, V- = -15V, V+ = +10V, V- = -15V ∆VSUP = ±5V, V+ = +15V, V- = -20V, V+ = +15V, V- = -10V ∆VSUP = ±5V, V+ = +17V, V- = -12V, V+ = +7V, V- = -12V ∆VSUP = ±5V, V+ = +12V, V- = -17V, V+ = +12V, V- = -7V GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 1 +25oC 10 - V 2, 3 +125oC, -55oC 10 - V 1 +25oC - -10 V 2, 3 +125oC, -55oC - -10 V 1 +25oC 100 - mA 2, 3 +125oC, -55oC 100 - mA 1 +25oC - -100 mA 2, 3 +125oC, -55oC - -100 mA 1 +25oC 100 - mA 2, 3 +125oC, -55oC 100 - mA 1 +25oC - -100 mA 2, 3 +125oC, -55oC - -100 mA 1 +25oC 54 - dB 2, 3 +125oC, -55oC 54 - dB 1 +25oC 54 - dB 2, 3 +125oC, -55oC 54 - dB 1 +25oC 54 - dB 2, 3 +125oC, -55oC 54 - dB 1 +25oC 54 - dB 2, 3 +125oC, -55oC 54 - dB Spec Number 3 511017-883 HA-5002/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Power Supply Current +ICC1 -ICC1 +ICC2 -ICC2 CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 mA 2, 3 +125oC, -55oC - 10 mA 1 +25oC -10 - mA 2, 3 +125oC, -55oC -10 - mA 1 +25oC - 10 mA 2, 3 +125oC, -55oC - 10 mA 1 +25oC -10 - mA 2, 3 +125oC, -55oC -10 - mA VSUP = ±15V, VOUT = 0V VSUP = ±15V, VOUT = 0V VSUP = ±12V, VOUT = 0V VSUP = ±12V, VOUT = 0V TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Specifications in Table 3 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Input Resistance Slew Rate SYMBOL NOTES TEMPERATURE MIN MAX UNITS RIN1 VSUP = ±15V 1 +25oC 1.5 - MΩ RIN2 VSUP = ±12V 1 +25oC 1.5 - MΩ +SR1 VSUP = ±15V, VOUT = -5V to +5V 1 +25oC 1000 - V/µs +125oC, -55oC 1000 - V/µs +25oC 1000 - V/µs +125oC, -55oC 1000 - V/µs +25oC 1000 - V/µs +125oC, -55oC 1000 - V/µs +25oC 1000 - V/µs +125oC, -55oC 1000 - V/µs 1, 2 +25oC - 10 ns 1, 2 +125oC, -55oC - 10 ns 1, 2 +25oC - 10 ns 1, 2 +125oC, -55oC - 10 ns -SR1 +SR2 -SR2 Rise and Fall Time CONDITIONS TR TF VSUP = ±15V, VOUT = +5V to -5V 1 VSUP = ±12V, VOUT = -5V to +5V 1 VSUP = ±12V, VOUT = +5V to -5V 1 VSUP = ±15V or ±12V, VOUT = 0 to +500mV VSUP = ±15V or ±12V, VOUT = 0 to -500mV Spec Number 4 511017-883 HA-5002/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified. LIMITS PARAMETERS Overshoot SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS +OS VSUP = ±12V or ±15V, VOUT = 0 to +500mV 1 +25oC - 30 % +125oC, -55oC - 30 % +25oC - 30 % +125oC, -55oC - 30 % +25oC - 300 mW +125oC, -55oC - 300 mW +25oC - 240 mW +125oC, -55oC - 240 mW -OS Quiescent Power Consumption 1 VSUP = ±15V, VIN = 0V, IOUT = 0mA 1, 3 VSUP = ±12V, VIN = 0V, IOUT = 0mA 1, 3 ROUT1 VSUP = ±12V 1 +25oC - 5 Ω ROUT2 VSUP = ±12V 1 +25oC - 5 Ω PC1 PC2 Output Resistance VSUP = ±12V or ±15V, VOUT = 0 to -500mV NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Measured between 10% and 90% points. 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3 Group A Test Requirements 1, 2, 3 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 5 511017-883 HA-5002/883 Die Characteristics WORST CASE CURRENT DENSITY: 0.7 x 105 A/cm2 at 3.6mA DIE DIMENSIONS: 81 x 80 x 19 mils ± 1 mils 2050 x 2030 x 483µm ± 25.4µm SUBSTRATE POTENTIAL (Powered Up): V1TRANSISTOR COUNT: 27 METALLIZATION: Type: Al, 1% Cu Thickness: 20kÅ ± 2kÅ PROCESS: Bipolar Dielectric Isolation GLASSIVATION: Type: Nitride Thickness: 7kÅ ± 0.7kÅ Metallization Mask Layout HA-5002/883 IN V1- V1- (ALT) V1+ (ALT) V2+ V2- V1+ OUT All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 6 Spec Number 511017-883