TISP70xxL1

oH
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CO
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PL
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TISP7015L1, TISP7038L1
*R
TRIPLE ELEMENT THYRISTOR OVERVOLTAGE PROTECTORS
TISP70xxL1 (VLV) OvervoltageProtectors
Three Terminal Very Low Voltage (VLV) Protection
Ion-Implanted Breakdown Region
Device
VDRM
V(BO)
V
V
D Package (Top View)
T1
1
8
NC
NC
2
7
NC
6
G
5
NC
‘7015L1
8
15
NC
3
‘7038L1
28
38
T2
4
MD7XAJA
Protection for Signal, Data and Control Lines
- ISDN
- T1/E1
- Ethernet
- RS232 & RS485
NC - No internal connection
Device Symbol
Low Capacitance
- ‘7015L1 ....................................................................... 24 pF typ.
- ‘7038L1 ....................................................................... 17 pF typ.
T2
T1
Rated for International Surge Wave Shapes
Voltage
Waveshape
2/10
1.2/50
10/700
10/1000
Standard
IPPSM
A
GR-1089-CORE
200
IEC 61000-4-5
100
TIA/EIA-IS-968
ITU-T K.20/45/21
GR-1089-CORE
SD7XAD
50
G
30
IEC 61000-4-2 Immunity Ratings
Contact .................................................................................. 6 kV
Air .......................................................................................... 8 kV
............................................ UL Recognized Components
Description
The TISP70xxL1 series are 3-point overvoltage protectors designed for protecting against metallic (transverse mode) and simultaneous
longitudinal (common mode) impulses. Each terminal pair has the same voltage limiting values and surge current capability.
These devices are designed to limit overvoltages between signal, data and control port conductors, connected to terminals T1 and T2, and a
protective ground, G. Each terminal pair has a symmetrical voltage-triggered bidirectional thyristor characteristic (Figure 1). Overvoltages are
initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage
on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device
holding current will normally be higher than the available short circuit d.c. system current, causing the protector to switch off as the diverted
current subsides.
How To Order
Device
Order As
Package
Carrier
TISP7015L1
D (8-pin, Small-outline)
R (Embossed Tape Reeled)
TISP7015L1DR-S
TISP7038L1
D (8-pin, Small-outline)
R (Embossed Tape Reeled)
TISP7038L1DR-S
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
The TISP70xxL1 is guaranteed to withstand the listed international ESD (ElectroStatic Discharge), and lightning impulses in both polarities.
Terminals marked NC do not have any internal connections and may be left floating or tied to some circuit point. The TISP7038L1 is a
functional replacement for the TPN3021.
Absolute Maximum Ratings, TJ = 25 °C (Unless Otherwise Noted)
Rating
TISP7015L1
TISP7038L1
Repetitive peak off-state voltage
Symbol
Value
Unit
VDRM
±8
± 28
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
200
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, also VDE0878)
100
8/20 (IEC 61000-4-5, Figure 12 generator, 1.2/50 voltage wave shape)
100
IPPSM
10/160 (TIA/EIA-IS-968 (formally FCC Part 68), 10/160 voltage wave shape)
A
75
5/310 (ITU-T k.20/21, 10/700 voltage wave shape, also IEC 61000-4-5 and VDE0433)
50
10/560 (TIA/EIA-IS-968 (formally FCC Part 68), 10/560 voltage wave shape)
40
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
30
Non-repetitive peak on-state current (see Note 1)
16.7 ms (60 Hz) full sine wave
9
20 ms (50 Hz) full sine wave
8
ITSM
A
3
1.5
0.2 s 50 Hz/60 Hz a.c.
2.0 s 50 Hz/60 Hz a.c.
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
Junction temperature
Storage temperature range
NOTES: 1. Initially the TISP70xxL1 must be in thermal equilibrium at the specified TA. The surge may be repeated after the TISP70xxL1
returns to its initial conditions.
2. These non-repetitive rated currents are peak values of either polarity.
EMC Immunity Test Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Level 3 open-circuit voltage, IEC 61000-4-2, 2001-4, ESD generator, also ITU-T K.20
contact discharge
air discharge
6
VO/C
kV
8
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted)
Parameter
IDRM
Repetitive peak offstate current
Test Conditions
Min
VD = ±VDRM
V(BO)
Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
I (BO)
Breakover current
dv/dt = ±250 V/ms, RSOURCE = 300 Ω
IH
Holding current
IT = ±5 A, di/dt = ±30 mA/ms
Typ
Max
Unit
±4
µA
TISP7015L1
±15
TISP7038L1
±38
±300
±30
V
mA
mA
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Electrical Characteristics, TJ = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
C KA
Off-state capacitance
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = 0 (see Note 3)
Min
Typ
TISP7015L1
24
TISP7038L1
17
Max
Unit
pF
NOTE 3: Value for any terminal pair, three-terminal guarded measurement with zero voltage bias on the unmeasured terminal.
Thermal Characteristics
Parameter
R ΘJA
Junction to free air thermal resistance
Test Conditions
Ptot = 0.8 W, TA = 25 °C, 5 cm2, FR4 PCB
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min
Typ
Max
Unit
170
°C/W
TISP70xxL1 (VLV) OvervoltageProtectors
Parameter Measurement Information
+i
Quadrant I
I PPSM
Switching
Characteristic
ITSM
V(BO)
I(BO)
IH
IDRM
VDRM
-v
VD
ID
ID
VD
VDRM
+v
IDRM
IH
I(BO)
V(BO)
ITSM
Quadrant III
Switching
Characteristic
IPPSM
-i
PM7AC
Figure 1. Voltage-Current Characteristic for any Terminal Pair
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10000
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC7LVC
TC7LVE
1.10
Normalized Breakover Voltage
ID - Off-State Current - nA
VD = ±50 V
1000
100
10
'7038L1
1.05
1.00
'7015L1
'7015L1
'7038L1
1
0.95
0
50
100
TA - Ambient Temperature - °C
150
-25
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
100
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 3.
TC7LVB
2
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC7LVD
Normalized Holding Current
IT - On-State Current - A
tw = 100 µs
TA = 25 °C
10
1
1.5
1
0.9
0.8
0.7
0.6
0.5
0.1
0.4
1
2
3
4 5 6 7 8 910
VT - On-State Voltage - V
20
Figure 4.
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
Figure 5.
150
TISP70xxL1 (VLV) OvervoltageProtectors
Typical Characteristics
CAPACITANCE
vs
OFF-STATE VOLTAGE
30
TC7L1AA
Coff - Capacitance - pF
'7015L1
20
10
9
'7038L1
8
7
6
5
0.1
0.2 0.3 0.5
1
2 3 5
10
VD - Off-State Voltage - V
20 30 50
Figure 6.
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP70xxL1 (VLV) OvervoltageProtectors
Rating and Thermal Information
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI7MAI
30
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
0.99
4
TI7LVA
1.00
Derating Factor
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
'7015L1
0.98
0.97
'7038L1
3
2
0.96
1.5
1
0.01
0.1
1
10
100
t - Current Duration - s
1000
Figure 7.
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
0.95
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 8.
TISP70xxL1 (VLV) OvervoltageProtectors
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as below.
Device
Symbolization Code
TISP7015L1DR-S
7015L1
TISP7038L1DR-S
7038L1
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2000 – REVISED JULY 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.