tisp821xmd

*R
oH
S
CO
M
PL
IA
NT
TISP8210MD BUFFERED P-GATE SCR DUAL
TISP8211MD BUFFERED N-GATE SCR DUAL
COMPLEMENTARY BUFFERED-GATE SCRS
FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION
TISP821xMD Overvoltage Protectors
High Performance Protection for SLICs with +ve & -ve
Battery Supplies
TISP8210MD 8-SOIC Package (Top View)
TISP8210MD Negative Overvoltage Protector
– Wide 0 to -110 V Programming Range
– Low +5 mA Max. Gate Triggering Current
– High -150 mA Min. Holding Current
G1
1
8
NC
K1
2
7
A
K2
3
6
A
G2
4
5
NC
MDRXAKC
TISP8211MD Positive Overvoltage Protector
– Wide 0 to +110 V Programming Range
– Low -5 mA Max. Gate Triggering Current
– +20 mA Min. Holding Current
NC - No internal connection
TISP8210MD Device Symbol
Rated for International Surge Wave Shapes
K1
IPPSM
Wave Shape
Standard
2/10
GR-1089-CORE
167
10/700
ITU-T K.20/21/45
70
10/1000
GR-1089-CORE
60
A
G1
A
A
G2
..................................................UL Recognized Component
K2
SDRXAJB
Circuit Application Diagram
TISP8211MD 8-SOIC Package (Top View)
SLIC
PROTECTION
Tip
C2
100 nF
G1
1
8
NC
A1
2
7
K
A2
3
6
K
G2
4
5
NC
MDRXALC
NC - No internal connection
C1
100 nF
TISP8211MD Device Symbol
A1
Ring
TISP8210MD
TISP8211MD
G1
+V BAT
K
- VBAT
AI-TISP8-003-a
K
G2
A2
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
SDRXAKB
TISP821xMD Overvoltage Protectors
Description
The TISP8210MD / TISP8211MD protector combination has been designed to protect dual polarity supply rail SLICs (Subscriber Line Interface
Circuits) against overvoltages on the telephone line caused by lightning and a.c. power contact and induction. Both devices have been
designed using the latest understanding of programmable protector technology to maximize performance.
The TISP8210MD and TISP8211MD are complementary programmable protection devices. The program or gate pins (G1, G2) are connected to
the positive and negative SLIC battery supplies to give protection which will track the SLIC supply levels. The integrated transistor buffer is an
essential element in this type of device as the current gain of around 150 reduces battery loading to below 5 mA during a.c. power induction or
power contact conditions. Additionally the Base-Emitter junction acts as a reverse blocking diode during operation preventing unnecessary
loading of the power supply.
The TISP8210MD / TISP8211MD combination is designed to be used in conjunction with the 12.5 Ω Bourns® 4A12P-1AH-12R5 Line
Protection Module (LPM). With this solution the application should pass Telcordia GR-1089-CORE testing with the 4A12P-1AH-12R5 acting as
the overcurrent protector and coordination element.
The TISP® device plus LPM solution is designed to work in harmony with the system primary protectors. GR-1089-CORE issue 3 lists test to
allow for three types of primary protection: Carbon Block (1000 V); Gas Discharge Tube (600 V) and Solid State (400 V). This solution is
designed to be used with the GDT and Solid State options. Under lightning conditions the current through the 12.5 Ω LPM will be 48 A (600 V /
12.5 Ω), which is well within the 60 A capability of the TISP8210MD / TISP8211MD combination.
How to Order
Device
TISP8210MD
Package
T I SP 8 2 1 1 M D
8-SOIC
Carrier
Embossed Tape Reeled
Order As
TISP8210MDR-S
Marking Code
8210M
T IS P 82 11 M D R- S
8 21 1M
Standard Quantity
2500
TISP8210MD Absolute Maximum Ratings, TA = 25 °C
Sy mbol
Value
U nit
Repetitive peak off-state voltage, VGK = 0
R at i n g
VDRM
-120
V
Repetitive peak reverse voltage, VGA = -70 V
VRRM
120
IPPSM
-167
-70
-60
A
ITSM
-11
-6.5
-3.4
-1.4
-1.3
A
TJ
-55 to +150
°C
Tstg
-65 to +150
°C
Non-repetitive peak impulse current (see Note 1)
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1 and 2)
100 ms
1s
5s
300 s
900 s
Junction temperature
Storage temperature range
NOTES: 1. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
2. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
TISP8211MD Absolute Maximum Ratings, TA = 25 °C
Sy m b o l
Value
U nit
Repetitive peak off-state voltage, VGA = 0
R at i n g
VDRM
120
V
Repetitive peak reverse voltage, VGK = 70 V
VRRM
-120
IPPSM
167
70
60
A
ITSM
11
6.5
3.4
1.4
1.3
A
TJ
-55 to +150
°C
Tstg
-65 to +150
°C
Non-repetitive peak impulse current (see Note 3)
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs voltage wave shape)
5/310 µs (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/21/45)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 3 and 4)
100 ms
1s
5s
300 s
900 s
Junction temperature
Storage temperature range
NOTES: 3. Initially the protector must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial
conditions.
4. These non-repetitive rated terminal currents are for the TISP8210MD and TISP8211MD together. Device (A)-terminal positive
current values are conducted by the TISP8211MD and (K)-terminal negative current values by the TISP8210MD.
Recommended Operating Conditions
Min
Typ
C1, C 2
Gate decoupling capacitor
See Figure 3
1 00
22 0
Max
Unit
nF
R1, R 2
Series resistance for Telcordia GR-1089-CORE
10
12 .5
Ω
TISP8210MD Electrical Characteristics, TA = 25 °C
Parameter
Test Conditions
Min
Typ Max Unit
IDRM
Repetitive peak off-state current
VD = VDRM, VGK = 0
-5
µA
IRRM
Repetitive peak reverse current
VR = VRRM, VGA = -70 V
5
µA
V(BO)
Breakover voltage
IH
Holding current
IGT
Gate trigger current
CO
Off-state capacitance
dv/dt = -250 V/ms, RSOURCE = 300 Ω, VGA = -80 V
(IK) IT = -1 A, di/dt = 1 A/ms, VGA = -80 V
- 82
- 15 0
V
mA
(IK) IT = -5 A, tp(g) ≥ 20 µs, VGA = -80 V
5
mA
f = 1 MHz, Vd = 1 V, VD = ±2 V
40
pF
TISP8211MD Electrical Characteristics, TA = 25 °C
Max
Unit
IDRM
Repetitive peak off-state current
Parameter
VD = VDRM, VGA = 0
5
µA
IRRM
Repetitive peak reverse current
VR = VRRM, VGK = 70 V
-5
µA
V(BO)
Breakover voltage
dv/dt = 250 V/ms, RSOURCE = 300 Ω, VGK = 80 V
82
IH
Holding current
IGT
Gate trigger current
CO
Off-state capacitance
Test Conditions
(IA) IT = 1 A, di/dt = -1 A/ms, VGK = 80 V
Min Typ
20
V
mA
(IA) IT = 5 A, tp(g) ≥ 20 µs, VGK = 80 V
-5
mA
f = 1 MHz, Vd = 1 V, VD = ±2 V
30
pF
Thermal Characteristics
Parameter
RθJA
Junction to ambient thermal resistance
Test Conditions
Ptot = 0.52 W, TA = 70 °C, 5 cm 2, FR4 PCB
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Min Typ Max
U nit
16 0
°C/W
TISP821xMD Overvoltage Protectors
Parameter Measurement Information
+i
Quadrant I
Blocking
Characteristic
V GK(BO)
V GA
-v
VD
IR
IRRM
ID
VR
V RRM
+v
IH
V(BO)
ITSM
Quadrant III
IPPSM
Switching
Characteristic
PM8XACBa
-i
Figure 1. TISP8210MD KA Terminal Characteristic
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
V(BO)
IH
-v
V RRM
VR
ID
IR
IRRM
+v
VD
V GK
V GA(BO)
Quadrant III
Blocking
Characteristic
PM8XABBa
-i
Figure 2. TISP8211MD AK Terminal Characteristic
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP821xMD Overvoltage Protectors
Applications Information
Primary Protection
0V
Overcurrent Protection
TISP8211MD
C2
100 nF
TISP8210MD
RING
SLIC
TIP
V BATH
Telcordia
GR-1089-CORE Issue 3
compliant LPM
(Bourns 4A12P-1AH-12R5)
C1
100 nF
0V
AI-TISP8-004-a
Figure 3. Typical Application Circuit
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
COPYRIGHT© 2006, BOURNS, INC. LITHO IN U.S.A. e 03/06 TSP0610
JANUARY 2006 - REVISED MAY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.