TISP® THYRISTOR SURGE PROTECTORS March, 2013 Models TISP820xHDMR-S and TISP61089HDMR-S Changes to Die and Package Materials Description of Changes This Product Change Notification describes changes to the die and package materials in the Bourns® Models TISP8200HDMR-S, TISP8201HDMR-S and TISP61089HDMR-S in 8-Lead SOIC (210 mil) packages. Copper wire was introduced on 8-Lead SOIC (150 mil) products in 2008. This current change extends the range of products using copper wire to those assembled in 8-Lead SOIC (210 mil) packages. In addition, a change is being made to the Model TISP8201HDMR-S following recent continuous improvement activities which have demonstrated an improvement in long term moisture resistance achieved by the addition of a Nickel/Gold (NiAu) metal overcoat to selective parts of the Aluminium (Al) chip metallization. NiAu is currently present on the backside of the die as a contact metallization. Improvement in the robustness of Model TISP8201HDMR-S is achieved by modification to a single metal mask layer. The wafer fab process flow and process settings are not changed for any of the products. Similar chip designs to Models TISP8200HDMR-S and TISP8201HDMR-S have recently been qualified as one of a pair of die within Model TISP9110LDMR-S in an 8-Lead SOIC (210 mil) package. There are no changes to the Bourns® Model TISP8200HDMR-S, TISP8201HDMR-S and TISP61089HDMR-S data sheet ratings or electrical characteristics. Qualification Requirements Assessment of the appropriate qualification stress test for each of the changes is made in agreement with Bourns Major Change Control Specification 14-0503. The identified change categories requiring qualification are: Design Front Metal Design Change Material Bonding Material Applicable to Model(s) TISP8201HDMR-S TISP8200HDMR-S TISP8201HDMR-S TISP61089HDMR-S TSP1302 Models TISP820xHDMR-S and TISP61089HDMR-S Changes to Die and Package Materials March, 2013 Page 2 of 4 Qualification by Similarity The front metal change on Model TISP8201HDMR-S is qualified by similarity to Model TISP9110LDMR-S. Wafers are manufactured in Bourns’ facility in Bedford, UK using similar wafer fab processing and assembled in packages using the same mold compound. Qualification Results Qualification results using copper wire are attached. Qualification results for the addition of the Nickel/Gold (NiAu) strap are attached. Product Labeling: The product marking and labels are unchanged. Identification of the Changed Product: Bourns maintains traceability back to source wafer lots and assembly sites for all TISP® products. Impact on Form, Fit, Function and Reliability: Product ratings and electrical characteristics are unaffected by the change. There is no impact on form, fit, function or reliability. Samples: Evaluation samples are available from April 2013 onward. Implementation Date: First date code using above changes: 1337 Deliveries of such products may occur from September 2013 onward. If you have any questions or need additional information, please contact Customer Service/ Inside Sales. Product Qualification Report TISP9110LDMR-S Description of product range: Qualification of changes to the design and material content of TISP9110LDMR-S Qualification sample information is as follows: Die Technology: Die Name: Top Metal : Back Metal: Wafer Fab: Bipolar SCR Protector 5TY800TQ/5TY900TQ Al & AlNiAu AlNiAu Bourns, Bedford, UK Assembly Site: Mold Compound: Die Attach: Bond Wire: L/F Material: Lead Finish: AIC Penang, Malaysia Sumitomo G600 Ablestik 84-1LMISR4 2.0 mil Copper Copper 100% Matte Tin Description: Changes to Chip Metal protection, Copper Wire Bonding, Die Design and Leadframe Design as described in the issued PCN. Lot 1 Stress Test/Conditions Moisture Induced Stress Sensitivity HTRB, 150oC, 1000h (Note 1) THB, 85oC/85%RH, 1000h (Note 1) HAST, 110oC/85%RH, 264h (Note 1) Temperature Cycle, -65/+150oC, 200cs (Note 1) ESD HBM, 1.0kV, Class 1C Die Shear Strength, >5kg Bond Pull Strength, >12g Wire Bond Shear, >100g Electrical Parameter Assessment Notes: 1. Standard Method SS/Accept EIA / JESD22 JESD22 JESD22 JESD22 JESD22 JESD22 MIL STD 883 MIL STD 883 JESD22 JESD86 A113 A108 A101 A110 A104 A114 2019.7 2011.7 B116 Level 1 76/0 76/0 45/0 76/0 3/0 32/0 32/0 32/0 32/0 Lot 2 Lot 3 MSL1 Precondition @ 260C Prior to Critical Stress Tests 76/0 76/0 76/0 76/0 76/0 76/0 45/0 45/0 45/0 76/0 76/0 76/0 3/0 3/0 3/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 32/0 Preconditioned according to JESD22 A113 Level 1 at 260°C peak reflow temperature prior to Qualification Reliability Testing Bourns Ltd., Bedford,UK Oct 2012 TISP8 & TISP6 in 210 mil SOIC Copper Wire Bonding Description of product range: TISP820xHDMR-SD and TISP61089HDMR-S – 8 SOIC (210 mil) Package Die Technology : Product Name : Top Metal : Back Metal : Wafer Fab : Bipolar SCR Protector “TISP” as Table (Row 1) Al AlNiAu Bourns, Bedford, UK Assembly Site: Mold Compound : Die Attach : Bond Wire : L/F Material : Lead Finish : AIC Penang, Malaysia Sumitomo G600 Ablestik 84-1LMISR4 2.0 mil Copper Copper 100% Matte Tin Description of change: Qualification of 2.0mil Copper Wire Bonding replacing 2.0 mil Au wire 61089HDM Stress Test/Conditions HTRB, 150oC, 1000h (Note 2) 85oC/85%RH, 1000h (Note 2) Temp Cycle, -65/+150oC, 200cs (Note 2) Solvent Resistance (3 Solvents) Physical Dimensions Flammability Moisture Reflow Sensitivity QSS (Note 1) Standard Method SS/Accept 009-101 009-102 009-104 009-107 009-133 009-111 MIL STD 883 JEDEC STD 22 MIL STD 883 MIL STD 883 MIL STD 883 UL94 JEDEC STD-020D 1015 A101 1010 2015 2016 VO MSL1 129/1 129/1 129/1 12/0 5/0 11/0 8200HDM 8201HDM 45/0 45/0 45/0 45/0 45/0 45/0 45/0 45/0 45/0 Not Applicable - Laser mark 5/0 Manufacturers Mold Compound Datasheet MSL1 Notes: 1. 2. QSS Specifications are Bourns Internal Qualification Standards Bourns Preconditions Surface Mount Products according to JESD22-A113 Level 1, 260 oC, prior to Qualification Reliability Tests Bourns Ltd., Bedford,UK Revised Feb 2013