MCP1663 Data Sheet

MCP1663
High-Voltage Integrated Switch PWM Boost Regulator with UVLO
Features
General Description
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The MCP1663 device is a compact, high-efficiency,
fixed-frequency, non-synchronous step-up DC-DC
converter which integrates a 36V, 400 mΩ NMOS
switch. It provides a space-efficient high-voltage
step-up power supply solution for applications powered
by either two-cell or three-cell alkaline, Ultimate
Lithium, NiCd, NiMH, one-cell Li-Ion or Li-Polymer
batteries.
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36V, 400 mΩ Integrated Switch
Up to 92% Efficiency
Output Voltage Range: up to 32V
1.8A Peak Input Current Limit:
- IOUT > 375 mA @ 5.0V VIN, 12V VOUT
- IOUT > 200 mA @ 3.3V VIN, 12V VOUT
- IOUT > 150 mA @ 4.2V VIN, 24V VOUT
Input Voltage Range: 2.4V to 5.5V
Undervoltage Lockout (UVLO):
- UVLO @ VIN Rising: 2.3V, typical
- UVLO @ VIN Falling: 1.85V, typical
No Load Input Current: 250 µA, typical
Sleep mode with 0.3 µA Typical Shutdown
Quiescent Current
PWM Operation with Skip Mode: 500 kHz
Feedback Voltage Reference: VFB = 1.227V
Cycle-by-Cycle Current Limiting
Internal Compensation
Inrush Current Limiting and Internal Soft Start
Output Overvoltage Protection (OVP) in the event
of:
- Feedback pin shorted to GND
- Disconnected feedback divider
Overtemperature Protection
Easily Configurable for SEPIC, Cuk or Flyback
Topologies
Available Packages:
- 5-Lead SOT-23
- 8-Lead 2x3 TDFN
Applications
• Two and Three-Cell Alkaline, Lithium Ultimate and
NiMH/NiCd Portable Products
• Single-Cell Li-Ion to 5V, 12V or 24V Converters
• LCD Bias Supply for Portable Applications
• Camera Phone Flash
• Portable Medical Equipment
• Hand-Held Instruments
The integrated switch is protected by the 1.8A
cycle-by-cycle inductor peak current limit operation.
There is an output overvoltage protection which turns
off switching in case the feedback resistors are
accidentally disconnected or the feedback pin is
short-circuited to GND.
Low-voltage technology allows the regulator to start-up
without high inrush current or output voltage overshoot
from a low-voltage input. The device features a UVLO
which avoids start-up and operation with low inputs or
discharged batteries for two cell-powered applications.
For standby applications (EN = GND), the device stops
switching, enters sleep mode and consumes 0.3 µA
(typical) of input current.
MCP1663 is easy to use and allows creating classic
boost, SEPIC or flyback DC-DC converters within a
small Printed Circuit Board (PCB) area. All
compensation and protection circuitry is integrated to
minimize the number of external components. Ceramic
input and output capacitors are used.
Package Types
MCP1663
SOT-23
SW 1
5 VIN
GND 2
VFB 3
4 EN
MCP1663
2x3 TDFN*
VFB 1
SGND 2
SW 3
NC 4
8 EN
EP
9
7 PGND
6 NC
5 VIN
* Includes Exposed Thermal Pad (EP); see Table 3-1.
 2015 Microchip Technology Inc.
DS20005406A-page 1
MCP1663
Typical Applications
D
PMEG2010
L
4.7 µH
CIN
4.7 - 10 µF
VIN
3.6V to 4.5V
SW
RTOP
1.05 MΩ
VIN
+
MCP1663
VFB
BATTERY
1 X LI-ION
OR
3 X ALKALINE
EN
-
VOUT
12V, 250 mA
COUT
4.7 - 10 µF
RBOT
120 kΩ
GND
ON
OFF
D
MBRM140
L
10 µH
CIN
10 µF
VIN
3.6V to 4.5V
SW
VIN
+
RTOP
1.05 MΩ
MCP1663
VFB
BATTERY
1 X LI-ION
OR
3 X ALKALINE
EN
-
VOUT
24V, 100 mA
COUT
10 - 22 µF
RBOT
56 k Ω
GND
ON
OFF
450
400
VOUT = 12V
IOUT (mA)
350
300
250
VOUT = 24V
200
150
100
50
0
2.4 2.7
3
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4
VIN (V)
Maximum Output Current vs. Input Voltage
DS20005406A-page 2
 2015 Microchip Technology Inc.
MCP1663
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VSW – GND .....................................................................+36V
EN, VIN – GND...............................................................+6.0V
VFB .................................................................................+1.3V
Power Dissipation ....................................... Internally Limited
Storage Temperature ....................................-65°C to +150°C
Ambient Temperature with Power Applied ....-40°C to +125°C
Operating Junction Temperature...................-40°C to +150°C
ESD Protection On All Pins:
HBM ................................................................. 4 kV
MM ..................................................................400V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Input Voltage Range
Undervoltage Lockout
(UVLO)
Output Voltage Adjust Range
Maximum Output Current
Sym.
Min.
Typ.
Max.
Units
Conditions
VIN
2.4
—
5.5
V
Note 1
UVLOSTART
—
2.3
—
V
VIN rising,
IOUT = 1 mA resistive load
UVLOSTOP
—
1.85
—
V
VIN falling,
IOUT = 1 mA resistive load
VOUT
—
—
32
V
IOUT
—
200
—
mA
3.3V VIN, 12V VOUT (Note 4)
375
—
mA
5.0V VIN, 12V VOUT (Note 4)
150
—
mA
4.2V VIN, 24V VOUT (Note 4)
1.227
1.264
V
Note 1
VFB
1.190
-3
—
3
%
Feedback Input Bias Current
IVFB
—
0.025
—
µA
No Load Input Current
IIN0
—
250
—
µA
Device switching, no load,
3.3V VIN, 12V VOUT (Note 2)
IQSHDN
—
300
—
nA
EN = GND,
feedback divider current not
included (Note 3)
Peak Switch Current Limit
ILmax
—
1.8
—
A
Note 4
NMOS Switch Leakage
INLK
—
0.4
—
µA
VIN = VSW = 5V; VOUT = 5.5V
VEN = VFB = GND
RDS(ON)
—
0.4
—
Ω
VIN = 5V, VOUT = 12V,
IOUT = 100 mA (Note 4)
Feedback Voltage
VFB Accuracy
Shutdown Quiescent Current
NMOS Switch ON Resistance
Note 1:
2:
3:
4:
Minimum input voltage in the range of VIN (VIN ≤ 5.5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin = VOUT x (1 – DCMAX). Recommended (VOUT - VIN) > 1V for boost applications.
IIN0 varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN pin when the device is
switching (EN = VIN), at no load, with RTOP = 120 k and RBOT = 1.05 MΩ.
IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP + RBOT) disconnected from VOUT.
Determined by characterization, not production tested.
 2015 Microchip Technology Inc.
DS20005406A-page 3
MCP1663
DC AND AC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Line Regulation
|(VFB/VFB)/
VIN|
—
0.05
0.5
%/V
VIN = 3V to 5V,
IOUT = 20 mA, VOUT = 12.0V
Load Regulation
|VFB/VFB|
—
0.5
1.5
%
IOUT = 20 mA to 125 mA,
VIN = 3.3V, VOUT = 12.0V
Maximum Duty Cycle
DCMAX
88
90
—
%
Note 4
Switching Frequency
fSW
425
500
575
kHz
±15%
EN Input Logic High
VIH
85
—
—
% of VIN IOUT = 1 mA
% of VIN IOUT = 1 mA
VIL
—
—
7.5
IENLK
—
0.025
—
µA
VEN = 5V
Soft-Start Time
tSS
—
3
—
ms
TA, EN Low-to-High,
90% of VOUT
Thermal Shutdown
Die Temperature
TSD
—
150
—
°C
TSDHYS
—
15
—
°C
EN Input Logic Low
EN Input Leakage Current
Die Temperature Hysteresis
Note 1:
2:
3:
4:
Minimum input voltage in the range of VIN (VIN ≤ 5.5V < VOUT) depends on the maximum duty cycle
(DCMAX) and on the output voltage (VOUT), according to the boost converter equation:
VINmin = VOUT x (1 – DCMAX). Recommended (VOUT - VIN) > 1V for boost applications.
IIN0 varies with input and output voltage (Figure 2-8). IIN0 is measured on the VIN pin when the device is
switching (EN = VIN), at no load, with RTOP = 120 k and RBOT = 1.05 MΩ.
IQSHDN is measured on the VIN pin when the device is not switching (EN = GND), at no load, with the
feedback resistors (RTOP + RBOT) disconnected from VOUT.
Determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise specified, all limits apply for typical values at ambient temperature
TA = +25°C, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic, L = 4.7 µH and 5-lead
SOT-23 package.
Boldface specifications apply over the controlled TA range of -40°C to +125°C.
Parameters
Sym.
Min.
Typ.
Max.
Units
Operating Junction Temperature
Range
TJ
-40
—
+125
°C
Storage Temperature Range
TA
-65
—
+150
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Thermal Resistance, 5LD-SOT-23
JA
—
201.0
—
°C/W
Thermal Resistance, 8LD-2x3 TDFN
JA
—
52.5
—
°C/W
Conditions
Temperature Ranges
Steady State
Transient
Package Thermal Resistances
DS20005406A-page 4
 2015 Microchip Technology Inc.
MCP1663
2.0
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, RTOP = 120 kΩ and RBOT = 1.05 MΩ, TA = 25°C.
2.3
100
VIN = 5.5V
VOUT = 9.0V
90
2.2
2.1
2
1.9
80
Efficiency (%)
UVLO Thresholds (V)
UVLO Start
UVLO Stop
70
VIN = 2.3V
VIN = 4.0V
60
50
40
1.8
30
1.7
20
-40 -25 -10
5
20 35 50 65 80 95 110 125
0.1
1
10
100
1000
IOUT (mA)
Ambient Temperature (°C)
FIGURE 2-4:
IOUT.
FIGURE 2-1:
Undervoltage Lockout
(UVLO) vs. Ambient Temperature.
1.230
9.0V VOUT Efficiency vs.
100
90
1.225
Efficiency (%)
Feedback Voltage (V)
VIN = 3.0V
1.220
1.215
VIN = 5.5V
VOUT = 12.0V
80
VIN = 2.3V
70
VIN = 4.0V
VIN = 3.0V
60
50
40
30
1.210
-40 -25 -10 5
20
20 35 50 65 80 95 110 125
0.1
1
Ambient Temperature (°C)
FIGURE 2-2:
VFB Voltage vs. Ambient
Temperature and VIN.
IOUT (mA)
600
VOUT = 12V
L = 4.7 µH
500
400
VOUT = 24V
L = 10 µH
300
200
100
0
2.3
2.7
3.1
3.5
3.9
4.3
4.7
5.1
5.5
Efficiency (%)
VOUT = 9.0V
L = 4.7 µH
700
100
90
80
70
60
50
40
30
20
10
0
 2015 Microchip Technology Inc.
1000
VOUT = 24V
L = 10 µH
VIN = 5.5V
VIN = 3.0V V = 4.0V
IN
0.1
VIN (V)
FIGURE 2-3:
Maximum Output Current
vs. VIN (VOUT in Regulation with Max. 5% Drop).
100
12.0V VOUT Efficiency vs.
FIGURE 2-5:
IOUT.
800
10
IOUT (mA)
1
10
100
1000
IOUT (mA)
FIGURE 2-6:
IOUT.
24.0V VOUT Efficiency vs.
DS20005406A-page 5
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
1600
VOUT = 12V
1400
1.8
IQ PWM Mode (µA)
Inductor Peak Current (A)
2
VOUT = 12V
1.6
VOUT = 24V
1.4
1.2
VIN = 2.3V
1200
1000
800
VIN = 3.0V
600
400
200
1
2.4 2.7
3
VIN = 5.5V
0
3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4
-40 -25 -10
Input Voltage (V)
FIGURE 2-7:
vs. Input Voltage.
Inductor Peak Current Limit
FIGURE 2-10:
No Load Input Current, IIN0
vs. Ambient Temperature.
300
575
Switching Frequency (kHz)
270
IQ PWM Mode (µA)
5 20 35 50 65 80 95 110 125
Ambient Temperature (°C)
240
210
180
150
120
90
60
30
VIN = 3.5V
550
IOUT = 150 mA
525
500
475
450
425
0
1.4 1.8 2.2 2.6 3 3.4 3.8 4.2 4.6
Input Voltage (V)
5
-40 -25 -10
5.4
5
20 35 50 65 80 95 110 125
Ambient Temperature (°C)
FIGURE 2-8:
No Load Input Current, IIN0
vs. VIN (EN = VIN).
fSW vs. Ambient
FIGURE 2-11:
Temperature.
5.5
0.8
Note: Without FB Resistor Divider Current
5.0
0.6
4.5
VOUT = 32.0V
0.5
0.4
VIN (V)
IQ Shutdown Mode (µA)
0.7
VOUT = 12.0V
0.3
4.0
3.5
3.0
0.2
2.5
VOUT = 6.0V
0.1
2.0
0
1.8
2.2
2.6
3
3.4 3.8 4.2
Input Voltage (V)
4.6
5
FIGURE 2-9:
Shutdown Quiescent
Current, IQSHDN vs. VIN (EN = GND).
DS20005406A-page 6
5.4
0
1
2
3
4
5
6
7
8
9
10
IOUT (mA)
FIGURE 2-12:
Threshold.
PWM Pulse Skipping Mode
 2015 Microchip Technology Inc.
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
VOUT
50 mV/div, AC Coupled
20 MHz BW
Enable Thresholds (% of VIN)
100
IOUT = 1 mA
90
EN VIH
IOUT = 100 mA
80
70
60
VSW
5 V/div
50
40
30
20
EN VIL
10
0
2.3
2.6
2.9
3.2 3.5 3.8 4.1
Input Voltage (V)
FIGURE 2-13:
Voltage.
4.4
4.7
5
IL
500 mA/div
1 µs/div
Enable Threshold vs. Input
FIGURE 2-16:
Waveforms.
High-Load PWM Mode
IOUT = 15 mA
Switch RDS(ON) (Ohms)
0.8
IOUT = 100 mA
0.7
VIN = 5V
0.6
VOUT
5 V/div
0.5
0.4
0.3
VIN
5 V/div
IL
500 mA/div
0.2
0.1
VEN
5 V/div
0
2.4
2.8
FIGURE 2-14:
vs. VIN.
3.2
3.6
4
Input Voltage (V)
4.4
4.8
5.2
800 µs/div
N-Channel Switch RDSON
VOUT 20 mV/div, AC Coupled, 20 MHz BW
FIGURE 2-17:
12.0V Start-Up by Enable.
IOUT = 15 mA
IOUT = 5 mA
VOUT
5 V/div
VSW 5 V/div
VIN
2 V/div
VSW
5 V/div
IL
100 mA/div
400 µs/div
2 µs/div
FIGURE 2-15:
12.0V VOUT Light Load
PWM Mode Waveforms.
 2015 Microchip Technology Inc.
FIGURE 2-18:
(VIN = VENABLE).
12.0V Start-Up
DS20005406A-page 7
MCP1663
Note: Unless otherwise indicated, VIN = 3.3V, IOUT = 20 mA, VOUT = 12V, CIN = COUT = 10 µF, X7R ceramic,
L = 4.7 µH, TA = 25°C.
VOUT
200 mV/div, AC Coupled
Step from 20 mA to 50 mA
IOUT
20 mA/div
2 ms/div
FIGURE 2-19:
Waveforms.
12.0V VOUT Load Transient
IOUT = 60 mA
Step from 3.3V to 5.0V
VIN
3 V/div
VOUT
100 mV/div, AC Coupled
800 us/div
FIGURE 2-20:
Waveforms.
DS20005406A-page 8
12.0V VOUT Line Transient
 2015 Microchip Technology Inc.
MCP1663
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1663
2x3 TDFN
3.1
PIN FUNCTION TABLE
MCP1663
SOT-23
Symbol
Description
1
3
VFB
2
—
SGND
Feedback Voltage Pin
3
1
SW
Switch Node, Boost Inductor Input Pin
4, 6
—
NC
Not Connected
Input Voltage Pin
Signal Ground Pin (TDFN only)
5
5
VIN
7
—
PGND
8
4
EN
Enable Control Input Pin
9
—
EP
Exposed Thermal Pad (EP); must be connected to Ground.
(TDFN only)
—
2
GND
Power Ground Pin (TDFN only)
Ground Pin (SOT-23 only)
Feedback Voltage Pin (VFB)
The VFB pin is used to provide output voltage regulation
by using a resistor divider. The VFB voltage is 1.227V
typical.
3.2
Signal Ground Pin (SGND)
The signal ground pin is used as a return for the
integrated reference voltage and error amplifier. The
signal ground and power ground must be connected
externally in one point.
3.3
Switch Node Pin (SW)
Connect the inductor from the input voltage to the SW
pin. The SW pin carries inductor current, which is 1.8A
peak typically. The integrated N-Channel switch drain
is internally connected to the SW node.
3.4
Not Connected (NC)
3.7
Enable Pin (EN)
The EN pin is a logic-level input used to enable or
disable device switching and lower quiescent current
while disabled. A logic high (>85% of VIN) will enable
the regulator output. A logic low (<7.5% of VIN) will
ensure that the regulator is disabled.
3.8
Exposed Thermal Pad (EP)
There is no internal electrical connection between the
Exposed Thermal Pad (EP) and the SGND and PGND
pins. They must be connected to the same potential on
the PCB.
3.9
Ground Pin (GND)
The ground or return pin is used for circuit ground
connection. The length of the trace from the input cap
return, the output cap return and the GND pin must be
as short as possible to minimize noise on the GND pin.
The 5-lead SOT-23 package uses a single ground pin.
This is an unconnected pin.
3.5
Power Supply Input Voltage Pin
(VIN)
Connect the input voltage source to VIN. The input
source must be decoupled from GND with a 4.7 µF
minimum capacitor.
3.6
Power Ground Pin (PGND)
The power ground pin is used as a return for the
high-current N-Channel switch. The signal ground and
power ground must be connected externally in one
point.
 2015 Microchip Technology Inc.
DS20005406A-page 9
MCP1663
NOTES:
DS20005406A-page 10
 2015 Microchip Technology Inc.
MCP1663
4.0
DETAILED DESCRIPTION
4.1
Device Overview
MCP1663 is a constant frequency PWM boost (step-up)
converter, based on a peak current mode architecture
which delivers high efficiency over a wide load range
from two-cell and three-cell Alkaline, Ultimate Lithium,
NiMH, NiCd and single-cell Li-Ion battery inputs. A high
level of integration lowers total system cost, eases
implementation and reduces board area.
The device features controlled start-up voltage
(UVLO), adjustable output voltage, 500 kHz PWM
operation with Skipping mode, 36V integrated switch,
internal compensation, inrush current limit, soft start,
and overvoltage protection in case the VFB connection
is lost.
The typical 400 m, 36V integrated switch is protected
by the 1.8A cycle-by-cycle inductor peak current
operation. When the Enable pin is pulled to ground
(EN = GND), the device stops switching, enters in
Shutdown mode and consumes approximately 300 nA
of input current (the feedback current is not included).
MCP1663 can be used to build classic boost, SEPIC or
flyback DC-DC converters.
 2015 Microchip Technology Inc.
DS20005406A-page 11
MCP1663
4.2
Figure 4-1 depicts the functional block diagram of the
MCP1663 device. It incorporates a current mode
control scheme, in which the PWM ramp signal is
derived from the NMOS power switch current
(VSENSE). This ramp signal adds slope ramp
compensation signal (VRAMP) and is compared to the
output of the error amplifier (VERROR) to control the
on-time of the power switch. A proper slope rate will be
designed to improve circuit stability.
Functional Description
The MCP1663 device is a compact, high-efficiency,
fixed-frequency, step-up DC-DC converter that
provides an easy-to-use high-output power supply
solution for applications powered by either two-cell or
three-cell alkaline or Lithium Energizer, three-cell NiCd
or NiMH or one-cell Li-Ion or Li-Polymer batteries.
SW
Internal Bias
and UVLO
Comparator
VIN
VBIAS
VUVLO_REF
VIN_OK
Gate Drive
and
Shutdown
VEXT
Control
Logic
EN
OCRef
Overcurrent Comparator
CS
+
VLIMIT
+
-
VSENSE
VRAMP
Slope
Compensation
Oscillator
S
GND
CLK
VPWM
-
Logic
SR Latch
+
QN
VERROR
EA
1.227V
VFB
+
Overvoltage Comparator
OVP_REF
VFB
+
-
VFB_FAULT
VOUT_OK
Power Good
Comparator
and Delay
Thermal
Shutdown
FIGURE 4-1:
DS20005406A-page 12
Rc
1.227V
Cc OVP_REF
VUVLO_REF
VFB
VIN_OK
Bandgap
EN
MCP1663 Simplified Block Diagram.
 2015 Microchip Technology Inc.
MCP1663
4.2.1
INTERNAL BIAS
The MCP1663 device gets its bias from VIN. The VIN
bias is used to power the device and drive circuits over
the entire operating range. The maximum VIN is 5.5V.
4.2.2
START-UP VOLTAGE
AND SOFT START
The MCP1663 device starts at input voltages that are
higher than or equal to a predefined set UVLO value.
MCP1663 starts switching at 2.3V for 12.0V typical.
Once started, the device will continue to operate under
normal load conditions down to 1.85V typical. There is
a soft start feature which provides a way to limit the
inrush current drawn from the input (batteries) during
start-up. The soft start has an important role in
applications where the switch will reach 32V. During
start-up, excessively high switch current, together with
the presence of high voltage, can overstress the NMOS
switch.
When the device is powered (EN = VIN and VIN rises
from zero to its nominal value), the output capacitor
charges to a value close to the input voltage (or VIN
minus a Schottky diode voltage drop). The overshoot
on output is limited by slowly increasing the reference
of the error amplifier. There is an internal reference
voltage circuit which charges an internal capacitor with
a weak current source. The voltage on this capacitor
slowly ramps the reference voltage. The soft-start
capacitor is completely discharged in the event of a
commanded shutdown or a thermal shutdown.
Due to the direct path from input to output, in the case
of start-up by enable (EN voltage switches from
low-to-high), the output capacitor is already charged
and the output starts from a value close to the input
voltage (Figure 2-17).
The internal oscillator has a delayed start to let the
output capacitor be completely charged to the input
voltage value.
4.2.3
UNDERVOLTAGE LOCKOUT
(UVLO)
MCP1663 features an UVLO which prevents fault
operation below 1.85V, which corresponds to the value
of two discharged primary cells. The device starts its
normal operation at approximately 2.3V input. The
upper limit is set to avoid any input transients
(temporary VIN drop), which might trigger the lower
UVLO threshold and restart the device. Usually, these
voltage transients (overshoots and undershoots) have
up to a few hundreds mV.
When the input voltage is below the 2.3V UVLO start
threshold, the device is operating with limited
specification. See Section 2.0 “Typical Performance
Curves” for more information.
4.2.4
PWM MODE OPERATION
MCP1663
operates
as
a
fixed-frequency,
non-synchronous converter. The switching frequency
is maintained at 500 kHz with a precision oscillator.
Lossless current sensing converts the peak current
signal to a voltage (VSENSE) and adds it to the internal
slope compensation (VRAMP). This summed signal is
compared to the voltage error amplifier output (VERROR)
to provide a peak current control signal (VPWM) for the
PWM control block. The slope compensation signal
depends on the input voltage. Therefore, the converter
provides the proper amount of slope compensation to
ensure stability. The peak current is set to 1.8A.
The MCP1663 device will operate in PWM even during
periods of light load operation by skipping pulses. By
operating in PWM mode, the output ripple is low and
the frequency is constant.
4.2.5
ADJUSTABLE OUTPUT VOLTAGE
The MCP1663 output voltage is adjustable with a
resistor divider over the VOUT range. High value
resistors are recommended to minimize power loss and
keep efficiency high at light loads. The device
integrates a transconductance-type error amplifier and
the values of the feedback resistors do not influence
the stability of the system.
4.2.6
MINIMUM INPUT VOLTAGE
AND MAXIMUM OUTPUT CURRENT
The maximum output current for which the device can
supply the load is dependent upon the input and output
voltage. The minimum input voltage necessary to reach
the value of the desired output depends on the
maximum duty cycle in accordance with the
mathematical relation VOUT = VINmin/(1 – DMAX). As
there is a 1.8A inductor peak current limit, VOUT can go
out of regulation before reaching the maximum duty
cycle.
For example, to ensure a 200 mA load current for
VOUT = 12.0V, a minimum of 3.0V input voltage is
necessary. If an application is powered by one Li-Ion
battery (VIN from 3.3V to 4.2V), the minimum load
current the MCP1663 device can deliver is close to
125 mA at 24.0V output (see Figure 2-3).
MCP1663 is a non-synchronous boost regulator. Due
to this fact, there is a direct path from VIN to VOUT
through the inductor and the diode. This means that,
while the device is not switching (VIN below UVLOSTOP
threshold), VOUT is not zero but equal to VIN – VF
(where VF is the voltage drop on the rectifier diode).
 2015 Microchip Technology Inc.
DS20005406A-page 13
MCP1663
4.2.7
ENABLE PIN
4.2.10
OVERCURRENT LIMIT
The MCP1663 device is enabled when the EN pin is set
high. The device is put into Shutdown mode when the
EN pin is set low. To enable the boost converter, the EN
voltage level must be greater than 85% of the VIN
voltage. To disable the boost converter, the EN voltage
must be less than 7.5% of the VIN voltage.
The MCP1663 device uses a typical 1.8A
cycle-by-cycle inductor peak current limit to protect the
N-channel switch. There is an overcurrent comparator
which resets the drive latch when the peak of the
inductor current reaches the limit. In current limitation,
the output voltage starts dropping.
In Shutdown mode, the MCP1663 device stops
switching and all internal control circuitry is switched
off. On boost configuration, the input voltage will be
bypassed to output through the inductor and the
Schottky diode. In the SEPIC converter, Shutdown
mode acts as output disconnect.
The peak overcurrent limit reference is VIN dependent
to accommodate low and weak inputs.
4.2.8
INTERNAL COMPENSATION
The error amplifier, with its associated compensation
network, completes the closed-loop system by
comparing the output voltage to a reference at the
input of the error amplifier and by feeding the amplified
and inverted error voltage to the control input of the
inner current loop. The compensation network
provides phase leads and lags at appropriate
frequencies to cancel excessive phase lags and leads
of the power circuit. All necessary compensation
components and slope compensation are integrated.
4.2.9
OUTPUT OVERVOLTAGE
PROTECTION (OVP)
An internal VFB fault signal turns off the PWM signal
(VEXT) and MCP1663 stop switching in the event of:
• short circuit of the feedback pin to GND
• disconnection of the feedback divider from VOUT
4.2.11
OUTPUT SHORT CIRCUIT
CONDITION
Like all non-synchronous boost converters, the
MCP1663 inductor current will increase excessively
during a short circuit on the converter’s output. Short
circuit on the output will cause the diode rectifier to fail
and the inductor’s temperature to rise. When the diode
fails, the SW pin becomes a high-impedance node, it
remains connected only to the inductor and the
excessive resulted ringing will damage the MCP1663
device.
4.2.12
OVERTEMPERATURE
PROTECTION
Overtemperature protection circuitry is integrated into
the MCP1663 device. This circuitry monitors the device
junction temperature and shuts the device off if the
junction temperature exceeds the typical +150°C
threshold. If this threshold is exceeded, the device will
automatically restart when the junction temperature
drops by 15°C. The output overvoltage protection
(OVP) is reset during an overtemperature condition.
For a regular boost converter without any protection
implemented, if the VFB voltage drops to ground potential, its N-Channel transistor will be forced to switch at
full duty cycle. As result VOUT rises and the SW pin’s
voltage will exceed the maximum rating and damages
the boost regulator IC, the external components and
the load. Because a lower feedback voltage can cause
an output voltage overshoot, an undervoltage feedback
comparator can be used to protect the circuit.
The MCP1663 has implemented a protection which
turns off PWM switching when the VFB pin’s voltage
drops to ground level. An additional comparator uses
an 80 mV reference and monitors the VFB voltage, and
generates a VFB_FAULT signal for control logic circuits if
the voltage decreases under this reference. Using an
undervoltage feedback comparator, in addition with an
UVLO input circuit, acts as a permanently Low Battery
device turning off.
The OVP comparator is disabled during the start-up
sequence and a thermal shutdown event.
DS20005406A-page 14
 2015 Microchip Technology Inc.
MCP1663
5.0
APPLICATION INFORMATION
5.1
Typical Applications
The MCP1663 non-synchronous boost regulator
operates over a wide output voltage range up to 32V.
The input voltage ranges from 2.4V to 5.5V. The device
operates down to 1.85V input with limited specification.
The UVLO thresholds are set to 2.3V when VIN is
ramping and to 1.85V when VIN is falling. The power
efficiency conversion is high for several decades of
load range. Output current capability increases with the
input voltage and decreases with the increasing output
voltage. The maximum output current is based on the
N-channel switch peak current limit, set to 1.8A, and on
a maximum duty cycle of 90%. Typical characterization
curves in this data sheet are presented to display the
typical output current capability.
5.2
Adjustable Output Voltage
Calculations
To calculate the resistor divider values for the
MCP1663, the following equation can be used. Where
RTOP is connected to VOUT, RBOT is connected to GND
and both are connected to the VFB input pin.
The values of the two resistors, RTOP and RBOT, affect
the no load input current and quiescent current. In
Shutdown mode (EN = GND), the device consumes
approximately 0.3 µA. With 24V output and 1 M feedback divider, the current which this divider drains from
input is 2.4 µA. This value is much higher than what the
device consumes. Keeping RTOP and RBOT high will
optimize efficiency conversion at very light loads. There
are some potential issues with higher value resistors,
as in the case of small surface mount resistors; environment contamination can create leakage paths on
the PCB that significantly change the resistor divider
and may affect the output voltage tolerance.
5.2.1
OVERVOLTAGE PROTECTION
The MCP1663 features an output overvoltage
protection (OVP) in case RTOP is disconnected from
the VOUT line. A 80 mV OVP reference is compared to
VFB voltage. If voltage on the VFB pin drops below the
reference value, the device stops switching and
prevents VOUT from rising up to a dangerous value.
OVP is not enabled during start-up and thermal
shutdown events.
EQUATION 5-1:
V OUT
R TOP = R BOT   ------------- – 1
 V FB

EXAMPLE 5-1:
VOUT = 12.0V
VFB
= 1.227V
RBOT = 120 k
RTOP = 1053.6 k (VOUT = 11.96V with a standard
value of 1050 k)
EXAMPLE 5-2:
VOUT = 24.0V
VFB
= 1.227V
RBOT = 53 k
RTOP = 983.67 k (VOUT = 23.82V with a standard
value of 976 k)
 2015 Microchip Technology Inc.
DS20005406A-page 15
MCP1663
5.3
Input Capacitor Selection
The boost input current is smoothened by the boost
inductor, reducing the amount of filtering necessary at
the input. Some capacitance is recommended to
provide decoupling from the input source. Because
MCP1663 is rated to work up to 125°C, low ESR X7R
ceramic capacitors are well suited, since they have a
low temperature coefficient and are small-sized. For
limited temperature range use at up to 85°C, a X5R
ceramic capacitor can be used. For light load
applications, 4.7 µF of capacitance is sufficient at the
input. For high-power applications that have high
source impedance or long leads, using a 20-30 µF
input capacitor is recommended to sustain high input
boost currents. Additional input capacitance can be
added to provide a stable input voltage.
Table 5-1 contains the recommended range for the
input capacitor value.
5.4
Output Capacitor Selection
The output capacitor helps provide a stable output
voltage during sudden load transients and reduces
the output voltage ripple. As with the input capacitor,
X7R ceramic capacitor is recommended for this
application. Using other capacitor types (aluminum or
tantalum) with large ESR has impact on the
converter's efficiency (see AN1337), maximum output
power and stability. For limited temperature range (up
to 85°C), X5R ceramic capacitors can be used. The
DC rating of the output capacitor should be greater
than the VOUT value. Generally, ceramic capacitors
lose up to 50% of their capacity when the voltage
applied is close to the maximum DC rating. Choosing
a capacitor with a safe higher DC rating or placing two
capacitors in parallel assure enough capacity to
correctly filter the output voltage.
Peak-to-peak output ripple voltage also depends on
the equivalent series inductance (ESL) of the output
capacitor. There are ceramic capacitors with special
internal architecture which minimize the ESL. Consult
the ceramic capacitor's manufacturer portfolio for
more information.
Table 5-1 contains the recommended range for the
input and output capacitor value.
TABLE 5-1:
CAPACITOR VALUE RANGE
CIN
COUT
Minimum
4.7 µF
10 µF
Maximum
—
47 µF
5.5
Inductor Selection
The MCP1663 device is designed to be used with small
surface mount inductors; the inductance value can
range from 4.7 µH to 10 µH. An inductance value of
4.7 µH is recommended for output voltages below 15V.
For higher output voltages, up to 32V, an inductance
value of 10 µH is optimum. While the device operates
at low inputs, below 3.0V, a low value inductor (2.2 µH
or 3.3 µH) ensures better stability but limited output
power capability. Usually, this is a good trade-off as
boost converters powered from two-cell batteries are
low-power applications.
The MCP1663 device is internally compensated so
output capacitance range is limited. See Table 5-1 for
the recommended output capacitor range.
An output capacitance higher than 10 µF adds a
better load step response and high-frequency noise
attenuation, especially while stepping from light to
heavy current loads. In addition, 2 x 10 µF output
capacitors ensure a better recovery of the output after
a short period of overloading. The output of 2 x 10 µF
is also recommended in the situation where output
voltage is lower than 8V.
While the N-Channel switch is on, the output current
is supplied by the output capacitor COUT. The amount
of output capacitance and equivalent series
resistance will have a significant effect on the output
ripple voltage. While COUT provides load current, a
voltage drop also appears across its internal ESR that
results in ripple voltage.
DS20005406A-page 16
 2015 Microchip Technology Inc.
MCP1663
TABLE 5-2:
MCP1663 RECOMMENDED
INDUCTORS FOR BOOST
CONVERTERS
Part Number
Value
(µH)
DCR

(typ.)
ISAT
(A)
Size
WxLxH (mm)
For high currents and high ambient temperatures, use
a diode with good thermal characteristics. See
Table 5-3 for recommended diodes.
TABLE 5-3:
Type
Coilcraft
RECOMMENDED SCHOTTKY
DIODES
VOUTmax
Max TA
MSS6132-472
4.7
0.043
2.84
6.1x6.1x3.2
PMEG2010
18V
< 85°C
XFL4020-472
4.7
0.0574
2.7
4.3x4.3x2.1
STPS120
18V
< 125°C
LPS5030-472
4.7
0.083
2.0
5.0x5.0x3.0
LPS6235-103
10
0.100
2.4
6.2x6.2x3.5
MBRM120
18V
< 125°C
XAL4040-103
10
0.092
1.9
4.3x4.3x4.1
PMEG4010
32V
< 85°C
7440530047 WE-TPC
4.7
0.07
2.2
5.8x5.8x2.8
74404042047 WE-LQS
4.7
0.03
2.0
4.0x4.0x1.6
74438335047 WE-MAPI
4.7
0.141
2.0
3.0x3.0x1.5
744773056 WE-PD2
5.6
0.069
2.4
4.0x4.5x3.2
744778610 WE-PD2
10
0.074
1.8
5.9x6.2x4.9
74408943100 WE-SPC
10
0.082
2.1
4.8x4.8x3.8
Würth Elektronik
TDK Corporation
B82462G4472
4.7
0.04
1.8
6.3x6.3x3.0
LTF5022-4R7
4.7
0.073
2.0
5.2x5.0x2.2
VLCF4024-4R7
4.7
0.075
1.76
4.0x4.0x2.4
SLF7055-100
10
0.039
2.5
7.0x7.0x5.5
Several parameters are used to select the correct
inductor: maximum-rated current, saturation current
and copper resistance (DCR). For boost converters,
the inductor current is much higher than the output
current. The average inductor current is equal to the
input current. The inductor’s peak current is 30-40%
higher than the average. The lower the inductor DCR,
the higher the efficiency of the converter: a common
trade-off in size versus efficiency.
The saturation current typically specifies a point at
which the inductance has rolled off a percentage of the
rated value. This can range from a 20% to 40%
reduction in inductance. As inductance rolls off, the
inductor ripple current increases, as does the peak
switch current. It is important to keep the inductance
from rolling off too much, causing switch current to
reach the peak limit.
5.6
Rectifier Diode Selection
Schottky diodes are used to reduce losses. The diode’s
average forward current rating has to be equal or
higher than the maximum output current. The diode’s
peak repetitive forward current rating has to be equal or
higher than the inductor peak current.The diode’s
reverse breakdown voltage must be higher than the
internal switch rating voltage of 36V.
UPS5819
32V
< 85°C
MBRM140
32V
< 125°C
5.7
SEPIC Converter Considerations
One of the advantages of using MCP1663 in SEPIC
topology is the usage of an output disconnect feature.
Also, the output voltage may be lower or higher than
the input voltage, resulting in buck or boost operation.
Input voltage is limited to the 2.4-5.5V range.
One major advantage is that the SEPIC converter
allows 3.0V or 3.3V buck-boost application from a
Li-Ion battery with load disconnect. Also, SEPIC is
recommended for higher output voltages where an
input-to-output isolation is necessary (due to the
coupling capacitor). An example of application is 5V
Input to 12V output with isolated input to the output.
An application example is shown in Figure 6-3.
The maximum output voltage, VOUTmax, must be
limited to the sum of (VIN + VOUT) < 32V, which is the
maximum internal switch DC rating. VIN must be lower
than 5.5V.
Some extra aspects need to be taken into account
when choosing the external components:
• the DC voltage rating of the coupling capacitor
should be at least equal to the maximum input
voltage
• the average current rating of the rectifier diodes is
equal to the output load current
• the peak current of the rectifier diode is the same
as the internal switch current, ISW = IIN + IOUT.
See the notes on Figure 6-3 in Section 6.0 “Typical
Application Circuits” for some recommended 1:1
coupled inductors.
The converter’s efficiency will be improved if the
voltage drop across the diode is lower. The average
forward voltage rating is forward-current dependent,
which is equal in particular to the load current.
 2015 Microchip Technology Inc.
DS20005406A-page 17
MCP1663
5.8
lost in the boost inductor and rectifier diode, with very
little loss in the input and output capacitors. For a more
accurate estimation of the internal power dissipation,
subtract the IINRMS2 x LDCR and IOUT x VF power
dissipation (where INRMS is the average input current,
LDCR is the inductor series resistance and VF is the
diode voltage drop).
Thermal Calculations
The MCP1663 device is available in two different
packages (5-lead SOT-23 and 8-lead 2x3 TDFN). By
calculating the power dissipation and applying the
package thermal resistance (JA), the junction
temperature is estimated. The maximum continuous
junction temperature rating for the MCP1663 device is
+125°C.
5.9
To quickly estimate the internal power dissipation for
the switching boost regulator, an empirical calculation
using measured efficiency can be used. Given the
measured efficiency, the internal power dissipation is
estimated by Equation 5-2.
PCB Layout Information
Good printed circuit board layout techniques are
important to any switching circuitry, and switching
power supplies are no different. When wiring the
switching high-current paths, short and wide traces
should be used. Therefore, it is important that the input
and output capacitors be placed as close as possible to
the MCP1663 to minimize the loop area.
EQUATION 5-2:
The feedback resistors and feedback signal should be
routed away from the switching node and the switching
current loop. When possible, ground planes and traces
should be used to help shield the feedback signal and
minimize noise and magnetic interference.
V
I
OUT OUT
 ------------------------------------ Efficiency  –  VOUT  I OUT  = P Dis
The difference between the first term, input power, and
the second term, power delivered, is the power
dissipated when using the MCP1661 device. This is an
estimate, assuming that most of the power lost is
internal to the MCP1663 and not CIN, COUT, the diode
and the inductor. There is some percentage of power
EN
+VIN
CIN
L
MCP1663
RTOP
RBOT
1
Vias to GND Bottom Plane
A
GND
GND
D
GND
K
COUT
+VOUT
Vias to GND Bottom Plane
GND Bottom Plane
FIGURE 5-1:
DS20005406A-page 18
5-Lead SOT-23 Recommended Layout.
 2015 Microchip Technology Inc.
MCP1663
A
L
K
+VOUT
D
+VIN
COUT
CIN
EN Routed on Bottom Side
GND
MCP1663
Via to GND
1
EN
RBOT
RTOP
GND
GND Bottom Plane
FIGURE 5-2:
Vias to GND
Bottom Plane
Routed to Bottom Side
8-Lead TDFN Recommended Layout.
 2015 Microchip Technology Inc.
DS20005406A-page 19
MCP1663
6.0
TYPICAL APPLICATION CIRCUITS
D
Schottky
L
4.7 µH
CIN
10 µF
VIN
2.4V-3.0V
SW
VIN
MCP1663
ALKALINE
+
VFB
EN
-
VOUT
12V, 100 mA
RTOP
1.05 MΩ
COUT
10 µF
RBOT
120 kΩ
GND
ON
OFF
ALKALINE
+
-
Component
Value
Manufacturer
CIN
10 µF
TDK Corporation
C2012X7R1A106K125AC Cap. Ceramic 10 µF 10V 10% X7R 0805
COUT
10 µF
TDK Corporation
C3216X7R1C106K160AC Cap. Ceramic 10 µF 16V 10% X7R 1206
4.7 µH
Coilcraft
L
Part Number
Comment
XFL4020-472MEB
Inductor Power 4.7 µH 2A SMD
RTOP
1.05 MΩ Yageo Corporation
RC0805FR-071M05L
Res. 1.05 MΩ 1/8W 1% 0805 SMD
RBOT
120 kΩ Yageo Corporation
RC0805FR-07120KL
D
—
FIGURE 6-1:
DS20005406A-page 20
NXP Semiconductor PMEG2010EJ,115
Res. 120 kΩ 1/8W 1% 0805 SMD
Schottky Rect. 20V 1A SOD323F
Two Alkaline Cells to 12V Boost Converter.
 2015 Microchip Technology Inc.
MCP1663
D
Schottky
L
10 µH
CIN
10 µF
VIN
3.3V-4.2V
SW
RTOP
1.05 MΩ
VIN
+
LI-ION
MCP1663
VFB
EN
Component
Value
Manufacturer
CIN
10 µF
TDK Corporation
VOUT
24V, 125 mA
COUT
10 µF
RBOT
56 kΩ
GND
Part Number
Comment
C2012X7R1A106K125AC Cap. Ceramic 10 µF 10V 10% X7R 0805
COUT
10 µF
TDK Corporation
C3216X7R1V106K160AC Cap. Ceramic 10 µF 35V 10% X7R 1206
L
10 µH
TDK Corporation
SLF7055-100
RTOP
1.05 MΩ Yageo Corporation RC0805FR-071M05L
RBOT
56 kΩ
D
—
FIGURE 6-2:
Inductor Power 10 µH 2.5A 7x7 mm
Res. 1.05 MΩ 1/8W 1% 0805 SMD
Yageo Corporation RC0805FR-0756KL
Res. 56 kΩ 1/8W 1% 0805 SMD
ON Semiconductor MBRM140T3G
Diode Schottky 40V 1A DO-216AA
Single Li-Ion Cell to 24V Output Boost Converter.
 2015 Microchip Technology Inc.
DS20005406A-page 21
MCP1663
CC
1 µF
L1A(1)
10 µH
CIN
10 µF
VIN
3.3V-4.2V
SW
LI-ION
MCP1663
VFB
EN
-
VOUT
3.3V, min. 150 mA
L1B(1)
10 µH
RTOP
2.2 kΩ
VIN
+
D
Schottky
RBOT
1.3 kΩ
COUT
10 µF
GND
ON
OFF
Note 1: Suggested 1:1 coupled inductors:
WURTH 744878004
Coilcraft LPD6235-102
EATON DRQ73-100
Component Value
Manufacturer
Part Number
Comment
CIN
10 µF TDK Corporation
COUT
10 µF TDK Corporation
C3216X7R1V106K160AC Cap. Ceramic 10 µF 35V 10% X7R 1206
1 µF
C2012X7R1E105K125AB Cap. Ceramic 1 µF 25V 10% X7R 0805
CC
L
TDK Corporation
C2012X7R1A106K125AC Cap. Ceramic 10 µF 10V 10% X7R 0805
10 µH Colilcraft
LPD6235-102
1:1 Coupled Inductor, 10uH, 2.7A
RTOP
2.2 kΩ Yageo Corporation
RC0805FR-072K2L
Res. 2.2 kΩ 1/8W 1% 0805 SMD
RBOT
1.3 kΩ Yageo Corporation
RC0805FR-071K3L
Res. 1.3 kΩ 1/8W 1% 0805 SMD
NXP Semiconductors PMEG2020AEA,115
Diode Schottky 20V 2A SOD323
D
—
FIGURE 6-3:
Single Li-Ion Cell to 3.3V Output Buck-Boost (SEPIC) Converter with 1:1 Coupled
Inductors and Load Disconnect.
DS20005406A-page 22
 2015 Microchip Technology Inc.
MCP1663
1
TR1
3
D1
7
VOUTS
CINS
10 µF
9
VOUT
5V, 200 mA
U1
VOUT
VIN
MCP1755
COUTS
1 µF
GND
Optional Regulator
D2
VOUT_AUX
13.5V
VIN
4.25V – 5.25V
SW
RT
100 kΩ
VIN
CIN
10 µF
MCP1663
VFB
EN
GND
COUT
1 µF
RL
5.6 kΩ
RB
10 kΩ
U2
Component
Value
Manufacturer
Part Number
Comment
CIN
10 µF
TDK Corporation
C2012X7R1A106K125AC Cap. ceramic 10 µF 10V 10% X7R 0805
COUT
1 µF
TDK Corporation
C2012X7R1E105K125AB Cap. ceramic 1 µF 25V X7R 0805
CINS
10 µF
TDK Corporation
C3225X7R1E106K250AC Cap. ceramic 10 µF 25V X7R 1210
COUTS
1 µF
TDK Corporation
C2012X7R1E105K125AB Cap. ceramic 1 µF 25V X7R 0805
TR1
25 µH
Würth Elektronik
750310799
Trans. Flyback 25 µH SMD
RL
5.6 kΩ
Vishay
CRCW08055K60FKEA
Res. 5.6 kΩ, 1/8W 1% 0805 SMD
RB
10 kΩ
Vishay
CRCW080510K0FKEA
Res. 10 kΩ 1/8W 1% 0805 SMD
Vishay
CRCW0805100KFKEA
Res. 100 kΩ 1/8W 1% 0805 SMD
RT
100 kΩ
D1, D2
—
On Semiconductor MBRM140T3G
Diode Schottky 40V 1A DO-216AA
U1
—
Microchip Tech.
MCP1755S LDO 5V Output
FIGURE 6-4:
MCP1755S-5002E/DB
5V Isolated Flyback Converter with an Non-Isolated Auxiliary Output.
 2015 Microchip Technology Inc.
DS20005406A-page 23
MCP1663
RBOT
CIN
10 µF
VIN
2.4V-3.0V
VOUT
12V, 50 mA
D
Schottky
L
4.7 µH
SW
C1
0.1 µF
PNP Q
VIN
+
RTOP
1.05 M
ALKALINE
MCP1663
VFB
EN
-
COUT
10 µF
RBOT
120 k
GND
ON
+
ALKALINE
OFF
V OUT
RBOT  ----------------  100
IOUT
-
Component
Value
Manufacturer
CIN
10 µF
TDK Corporation
COUT
10 µF
TDK Corporation
C3216X7R1V106K160AC Cap. ceramic 10 µF 35V 10% X7R 1206
C1
0.1 µF
TDK Corporation
C1608X7R1E104K080AA Cap. ceramic 0.1 µF 25V 10% X7R 0603
4.7 µH
Coilcraft
XFL4020-472MEB
L
Part Number
Comment
C2012X7R1A106K125AC Cap. ceramic 10 µF 10V 10% X7R 0805
Inductor Power 4.7 µH 2A SMD
RTOP
1.05 MΩ Yageo Corporation RC0805FR-071M05L
Res. 1.05 MΩ 1/8W 1% 0805 SMD
RBOT
120 kΩ Yageo Corporation RC0805FR-07120KL
Res. 120 kΩ 1/8W 1% 0805 SMD
D
—
NXP Semiconduc- PMEG2010EJ,115
tor
Schottky Rect. 20V 1A SOD323F
PNP Q
—
Micro Commercial MMBT3906-TP
Components
Trans. SS PNP 40V 300 mW SOT-23
FIGURE 6-5:
Example.
DS20005406A-page 24
Two Alkaline Cells to 12V Boost Converter with Load Disconnect Application
 2015 Microchip Technology Inc.
MCP1663
CIN
10 µF
VIN
9V-16V
D
Schottky
L
10 µH
VBias
5V
SW
RTOP
1.05 M
VIN
MCP1663
VFB
5V Bias for VIN pin
EN
R2
5.6 k
DZ
5.1V
R1
5.6 k
VOUT
24V 350mA
COUT1
10 µF
COUT2
10 µF
RBOT
56 k
GND
C1
1 µF
Component
Value
Manufacturer
Part Number
Comment
CIN
10 µF
TDK Corporation
C2012X7R1A106K125AC
Cap. cer. 10 µF 10V 10% X7R 0805
COUT1,
COUT2
10 µF
TDK Corporation
C3216X7R1V106K160AC
Cap. cer. 10 µF 35V 10% X7R 1206
C1
1 µF
TDK Corporation
CGA4J1X7R0J106K125AC
Cap. cer. 10 µF 6.3V 10% X7R 0805
L
10 µH
TDK Corporation
SLF7055-100
Inductor Power 10 µH 2.5A 7x7mm
RTOP
1.05 MΩ Yageo Corporation
RC0805FR-071M05L
Res. 1.05 MΩ 1/8W 1% 0805 SMD
Yageo Corporation
RC0805FR-0756KL
Res. 56 kΩ 1/8W 1% 0805 SMD
Vishay
CRCW08055K60FKEA
Res. 5.6 kΩ 1/8W 1% 0805 SMD
RBOT
56 kΩ
R1, R2
5.6 kΩ
D
—
ON Semiconductor MBRM140T3G
Diode Schottky 40V 1A DO-216AA
DZ
—
Diodes Inc.
Diode, Zener, 5.1V, 1W, SMA
FIGURE 6-6:
for VIN pin.
SMAZ5V1-13-F
High Voltage (9 to 16V) Input Boost Converter to 24V Output with Separate 5V Bias
 2015 Microchip Technology Inc.
DS20005406A-page 25
MCP1663
7.0
PACKAGING INFORMATION
7.1
Package Marking Information
5-Lead SOT-23
Example
AABQ5
14256
8-Lead TDFN (2x3x0.75 mm)
Example
ACG
514
25
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
DS20005406A-page 26
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC® designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2015 Microchip Technology Inc.
MCP1663
.# #$#
/!- 0
#
1/
%##!#
##
+22---
2
/
b
N
E
E1
3
2
1
e
e1
D
A2
A
c
φ
A1
L
L1
3#
4#
5$8%1
44""
5
56
7
5
(
4!1#
()*
6$# !4!1#
6,9#
:
!!1//
;
:
#!%%
:
(
6,<!#
"
:
!!1/<!#
"
:
;
6,4#
:
)*
(
.#4#
4
:
=
.#
#
4
(
:
;
.#
>
:
>
4!/
;
:
=
4!<!#
8
:
(
!"!#$!!% #$ !% #$ #&!
!
!#
"'(
)*+ ) #&#,$ --#$## - *)
 2015 Microchip Technology Inc.
DS20005406A-page 27
MCP1663
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005406A-page 28
 2015 Microchip Technology Inc.
MCP1663
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2015 Microchip Technology Inc.
DS20005406A-page 29
MCP1663
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20005406A-page 30
 2015 Microchip Technology Inc.
MCP1663
!
"#$%&''()*+, !
.# #$#
/!- 0
#
1/
%##!#
##
+22---
2
/
 2015 Microchip Technology Inc.
DS20005406A-page 31
MCP1663
NOTES:
DS20005406A-page 32
 2015 Microchip Technology Inc.
MCP1663
APPENDIX A:
REVISION HISTORY
Revision A (June 2015)
• Original Release of this Document.
 2015 Microchip Technology Inc.
DS20005406A-page 33
MCP1663
NOTES:
DS20005406A-page 34
 2015 Microchip Technology Inc.
MCP1663
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
[X](1)
X
/XX
Device
Tape and Reel
Option
Temperature
Range
Package
Device:
MCP1663T: High-Voltage Integrated Switch PWM Boost
Regulator with UVLO (Tape and Reel)
Tape and Reel
Option:
T
Temperature Range:
E
Package:
MNY*= Plastic Dual Flat, No Lead – 2x3x0.75 mm Body
(TDFN)
OT = Plastic Small Outline Transistor (SOT-23)
Examples:
a)
MCP1663T-E/MNY:
b)
MCP1663T-E/OT:
Tape and Reel
Extended temperature,
8LD TDFN package
Tape and Reel
Extended temperature,
5LD SOT-23 package
= Tape and Reel(1)
= -40°C to +125°C
* Y = Nickel palladium gold manufacturing designator. Only
available on the TDFN package.
 2015 Microchip Technology Inc.
Note 1:
Tape and Reel identifier only appears in the
catalog part number description. This identifier is used for ordering purposes and is not
printed on the device package. Check with
your Microchip Sales Office for package
availability with the Tape and Reel option.
DS20005406A-page 35
MCP1663
NOTES:
DS20005406A-page 36
 2015 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer,
LANCheck, MediaLB, MOST, MOST logo, MPLAB,
OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC,
SST, SST Logo, SuperFlash and UNI/O are registered
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
The Embedded Control Solutions Company and mTouch are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo,
CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit
Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet,
KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo,
MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademark of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2015, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
ISBN: 978-1-63277-404-0
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
== ISO/TS 16949 ==
 2015 Microchip Technology Inc.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS20005406A-page 37
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Web Address:
www.microchip.com
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2943-5100
Fax: 852-2401-3431
China - Xiamen
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
Germany - Dusseldorf
Tel: 49-2129-3766400
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Austin, TX
Tel: 512-257-3370
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
China - Dongguan
Tel: 86-769-8702-9880
China - Hangzhou
Tel: 86-571-8792-8115
Fax: 86-571-8792-8116
India - Pune
Tel: 91-20-3019-1500
Japan - Osaka
Tel: 81-6-6152-7160
Fax: 81-6-6152-9310
Japan - Tokyo
Tel: 81-3-6880- 3770
Fax: 81-3-6880-3771
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Detroit
Novi, MI
Tel: 248-848-4000
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
Houston, TX
Tel: 281-894-5983
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
New York, NY
Tel: 631-435-6000
San Jose, CA
Tel: 408-735-9110
Canada - Toronto
Tel: 905-673-0699
Fax: 905-673-6509
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Germany - Pforzheim
Tel: 49-7231-424750
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Italy - Venice
Tel: 39-049-7625286
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Poland - Warsaw
Tel: 48-22-3325737
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Sweden - Stockholm
Tel: 46-8-5090-4654
UK - Wokingham
Tel: 44-118-921-5800
Fax: 44-118-921-5820
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
01/27/15
DS20005406A-page 38
 2015 Microchip Technology Inc.