UM3302H Rev.01 Reliability Report FOR UM3302H May16, 2013 UNION SEMICONDUCTOR, INC. Written by Approved by Fang JJ Product Engineer Ivan Product Manager Conclusion The UM3302H successfully meets the quality and reliability standards required of all Union products. Table of Contents I. ........Device Description II. ........Manufacturing Information III. ........Packaging Information IV. ........Die Information V. ....... Reliability Evaluation I. Device Description A. General The UM3302H, a ESD protected level translator, provides the level shifting necessary to allow data transfer in multi-voltage system. This 2-channel non-inverting translator uses two separate configurable power-supply rails. The A port is designed to track VCCA. VCCA accepts any supply voltage from 1.2V to 3.6V. The B port is designed to track VCCB. VCCB accepts any supply voltage from 1.65V to 5.5V. This allows for universal low-voltage bidirectional translation between any of the 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage nodes. Both I/O ports are auto-sensing; thus, no direction pin is required, making it ideal for data transfer between low-voltage ASICs /PLDs and higher voltage systems. The UM3302H operates at a guaranteed data rate of 20Mbps over the entire specified operating voltage range. Within specific voltage domains, higher data rates are up to 100Mbps. When the output-enable (OE) input is low, all outputs are placed in the high-impedance state. The UM3302H is designed so that the OE input circuit is designed to track VCCA. To ensure the high-impedance state during power up or power down, OE should be tied to GND through a pull down resistor; the minimum value of the resistor is determined by the current-sourcing capability of the driver. The UM3302H is a dual channel level translator available in 1.90mm×0.90mm CSP8 bump package. B. Absolute Maximum Ratings Item Rating All Voltages Referenced to GND Supply Voltage (V CCA) -0.5 to +4.5V Supply Voltage (V CCB) -0.5 to +6.5V A Port Voltage (VA) -0.5 to +4.5V B Port Voltage (VB) -0.5 to +6.5V Lead soldering temperature (TL) 300°C (10 sec.) Operating Temperature (TOP) -40 to +85 °C Storage Temperature ( TSTG) -65 to +150 °C II. Manufacturing Information A. Process: CMOS B. Wafer Type: UW010 C. Fabrication Location: P.R.China D. Assembly Location: P.R.China III. Packaging Information A. Package Type: CSP8 B. Lead Frame: N/A C. Lead Finish: N/A D. Die Attach: N/A E. Bond wire: N/A F. Mold Material: N/A G. Flammability Rating: Class UL94-V0 H. ESD Level (HBM): ±15KV(B Port); ±2KV(Other Pin) J. Classification of Moisture Sensitivity per JEDEC standard JESD22-A113: Level 1 IV. Die Information A. Dimensions: 820 x 1820 um2 B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/Si/Cu D. Backside Metallization: N/A E. Minimum Metal Width: 0.5 um F. Minimum Metal Spacing: 30.5 um G. Bondpad Dimensions: 222 x 222 um2 H. Isolation Dielectric: SiO2 J. Die Separation Method: Wafer Saw V. Reliability Evaluation A. Operating Life Test Test Item Test Condition High Temp Operating Life Failure Identification Sample Number Size of Failure 77 0 Sample Number Size of Failure CSP8 231 0 CSP8 77 0 CSP8 77 0 CSP8 77 0 CSP8 77 0 Package Electrical 125 ºC,168h,1.1Vcc JESD22-A108-B parameters CSP8 & functionality Test Circuit B. Reliability evaluation test Test Item Test Condition Failure Identification Package Electrical Precondition 125ºC,24h,85ºC/85%RH, parameters JESD22-A113-D 168h, 260ºC,3 Times & functionality & SAT Temp. Cycling -65-150ºC,Dewell=15Min, JESD22-A104-C 500 Cycles Autoclave 121ºC,100%RH,2atm, JESD22-A102-C 96hrs Unbiased Temp/Humidity JESD22-A103-B parameters & functionality Electrical parameters & functionality Electrical 130ºC/85%RH, 96hrs JESD22-A118-B High Temp Storage Electrical parameters & functionality Electrical 150ºC,1000h parameters & functionality C. ESD and Latch-Up Test The UM3302H die type has been found to have B Port able to pass 5KV, other Pin pass 2KV ESD human body mode test. (Refer to following ESD Test Circuit). Latch-Up testing has shown that this device withstands a current of 200mA. --The ESD stress is developed with a 100pF capacitor discharging through a 1500Ω resistor to the device. --The use of 1500Ω resistor implies that the human body mode approximates a current source.