Reliability Report

UM3302H
Rev.01
Reliability Report
FOR
UM3302H
May16, 2013
UNION SEMICONDUCTOR, INC.
Written by
Approved by
Fang JJ
Product Engineer
Ivan
Product Manager
Conclusion
The UM3302H successfully meets the quality and reliability standards required of all Union
products.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. ........Packaging Information
IV. ........Die Information
V. ....... Reliability Evaluation
I. Device Description
A. General
The UM3302H, a ESD protected level translator, provides the level shifting necessary to allow
data transfer in multi-voltage system. This 2-channel non-inverting translator uses two
separate configurable power-supply rails. The A port is designed to track VCCA. VCCA
accepts any supply voltage from 1.2V to 3.6V. The B port is designed to track VCCB. VCCB
accepts any supply voltage from 1.65V to 5.5V. This allows for universal low-voltage
bidirectional translation between any of the 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, and 5V voltage
nodes. Both I/O ports are auto-sensing; thus, no direction pin is required, making it ideal for
data transfer between low-voltage ASICs /PLDs and higher voltage systems.
The UM3302H operates at a guaranteed data rate of 20Mbps over the entire specified
operating voltage range. Within specific voltage domains, higher data rates are up to
100Mbps.
When the output-enable (OE) input is low, all outputs are placed in the high-impedance state.
The UM3302H is designed so that the OE input circuit is designed to track VCCA.
To ensure the high-impedance state during power up or power down, OE should be tied to
GND through a pull down resistor; the minimum value of the resistor is determined by the
current-sourcing capability of the driver.
The UM3302H is a dual channel level translator available in 1.90mm×0.90mm CSP8 bump
package.
B. Absolute Maximum Ratings
Item
Rating
All Voltages Referenced to GND
Supply Voltage (V CCA)
-0.5 to +4.5V
Supply Voltage (V CCB)
-0.5 to +6.5V
A Port Voltage (VA)
-0.5 to +4.5V
B Port Voltage (VB)
-0.5 to +6.5V
Lead soldering temperature (TL)
300°C (10 sec.)
Operating Temperature (TOP)
-40 to +85 °C
Storage Temperature ( TSTG)
-65 to +150 °C
II. Manufacturing Information
A. Process: CMOS
B. Wafer Type: UW010
C. Fabrication Location: P.R.China
D. Assembly Location: P.R.China
III. Packaging Information
A. Package Type: CSP8
B. Lead Frame: N/A
C. Lead Finish: N/A
D. Die Attach: N/A
E. Bond wire: N/A
F. Mold Material: N/A
G. Flammability Rating: Class UL94-V0
H. ESD Level (HBM): ±15KV(B Port); ±2KV(Other Pin)
J. Classification of Moisture Sensitivity
per JEDEC standard JESD22-A113: Level 1
IV. Die Information
A. Dimensions: 820 x 1820 um2
B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
C. Interconnect: Al/Si/Cu
D. Backside Metallization: N/A
E. Minimum Metal Width: 0.5 um
F. Minimum Metal Spacing: 30.5 um
G. Bondpad Dimensions: 222 x 222 um2
H. Isolation Dielectric: SiO2
J. Die Separation Method: Wafer Saw
V. Reliability Evaluation
A. Operating Life Test
Test Item
Test Condition
High Temp
Operating Life
Failure
Identification
Sample
Number
Size
of Failure
77
0
Sample
Number
Size
of Failure
CSP8
231
0
CSP8
77
0
CSP8
77
0
CSP8
77
0
CSP8
77
0
Package
Electrical
125 ºC,168h,1.1Vcc
JESD22-A108-B
parameters
CSP8
& functionality
Test Circuit
B. Reliability evaluation test
Test Item
Test Condition
Failure
Identification
Package
Electrical
Precondition
125ºC,24h,85ºC/85%RH,
parameters
JESD22-A113-D
168h, 260ºC,3 Times
& functionality
& SAT
Temp. Cycling
-65-150ºC,Dewell=15Min,
JESD22-A104-C
500 Cycles
Autoclave
121ºC,100%RH,2atm,
JESD22-A102-C
96hrs
Unbiased
Temp/Humidity
JESD22-A103-B
parameters
& functionality
Electrical
parameters
& functionality
Electrical
130ºC/85%RH, 96hrs
JESD22-A118-B
High Temp Storage
Electrical
parameters
& functionality
Electrical
150ºC,1000h
parameters
& functionality
C. ESD and Latch-Up Test
The UM3302H die type has been found to have B Port able to pass 5KV, other Pin pass
2KV ESD human body mode test. (Refer to following ESD Test Circuit). Latch-Up testing has
shown that this device withstands a current of 200mA.
--The ESD stress is developed with a 100pF capacitor discharging through a 1500Ω resistor to
the device.
--The use of 1500Ω resistor implies that the human body mode approximates a current source.