Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MC33886
Rev 10.0, 01/2014
5.0 A H-Bridge
33886
The 33886 is a monolithic H-Bridge ideal for fractional horsepower
DC-motor and bi-directional thrust solenoid control. The IC
incorporates internal control logic, charge pump, gate drive, and low
RDS(ON) MOSFET output circuitry. The 33886 is able to control
continuous inductive DC load currents up to 5.0 A. Output loads can
be pulse width modulated (PWM-ed) at frequencies up to 10 kHz.
A Fault Status output reports undervoltage, short-circuit, and
overtemperature conditions. Two independent inputs control the two
half-bridge totem-pole outputs. Two disable inputs force the H-Bridge
outputs to tri-state (exhibit high-impedance).
The 33886 is parametrically specified over a temperature range of
-40 C  TA  125 C, 5.0 V  V+  28 V. The IC can also be operated
up to 40 V with derating of the specifications. The IC is available in a
surface mount power package with exposed pad for heatsinking. This
device is powered by SMARTMOS technology.
H-BRIDGE
VW SUFFIX (PB-FREE)
98ASH70702A
20-PIN HSOP
Features
• 5.0 V to 40 V continuous operation
• 120 m RDS(on) H-Bridge MOSFETs
• TTL / CMOS compatible Inputs
• PWM frequencies up to 10 kHz
• Active current limiting via internal constant off-time PWM (with
temperature-dependent threshold reduction)
• Output short-circuit protection
• Undervoltage shutdown
• Fault status reporting
5.0 V
Applications
• Automotive systems
• DC motor control in industrial and robotic systems
• DC motor and actuator control in boats, RVs, and
marine systems
• Appliance and white goods electrical actuators
• Powered machine and hand tools
• Antenna rotors and dish positioning systems
V+
33886
CCP
V+
OUT1
IN
FS
OUT
OUT
OUT
OUT
IN1
IN2
D1
D2
MCU
Motor
OUT2
PGND
GND
Figure 1. 33886 Simplified Application Diagram
© Freescale Semiconductor, Inc., 2007 - 2014. All rights reserved.
1
Orderable Parts
Table 1. Orderable Part Variations
Part Number
Temperature (TA)
Package
MC33886PVW/R2
-40 to 125 °C
20 HSOP
33886
2
Analog Integrated Circuit Device Data
Freescale Semiconductor
INTERNAL BLOCK DIAGRAM
INTERNAL BLOCK DIAGRAM
C
VPWR
CCP
V+
CP
Charge
Pump
80
A
80 uA
(each)
OUT1
IN1
IN2
D1
D2
Current Limit,
Current Limit,
Overcurrent
Short-circuit
Sense
Sense
Circuit
Circuit
5.0 V
Regulator
Gate Drive
OUT2
25 uA
25
A
Control
Logic
Over
Overtemperature
temperature
Undervoltage
Undervoltage
FS
AGND
PGND
Figure 2. 33886 Simplified Internal Block Diagram
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
3
PIN CONNECTIONS
PIN CONNECTIONS
AGND
1
20
DNC
FS
2
19
IN2
IN1
3
18
D1
V+
4
17
CCP
V+
5
16
V+
OUT1
6
15
OUT2
OUT1
7
14
OUT2
DNC
8
13
D2
PGND
9
12
PGND
PGND
10
11
PGND
Figure 3. 33886 Pin Connections
Table 2. 33886 Pin Definitions
A functional description of each pin can be found in the Functional Pin Description section beginning on page 16.
Pin Number
Pin Name
Formal Name
1
AGND
Analog Ground
2
FS
Fault Status for HBridge
3
IN1
Logic Input Control 1
4, 5, 16
V+
6, 7
OUT1
H-Bridge Output 1
8, 20
DNC
Do Not Connect
9 –12
PGND
Power Ground
13
D2
Disable 2
14, 15
OUT2
H-Bridge Output 2
17
CCP
18
D1
Disable 1
19
IN2
Logic Input Control 2
Definition
Low-current analog signal ground.
Open drain active Low Fault Status output requiring a pull-up resistor to 5.0 V.
True logic input control of OUT1 (i.e., IN1 logic High = OUT1 logic High).
Positive Power Supply Positive supply connections.
Output 1 of H-Bridge.
Either do not connect (leave floating) or connect these pins to ground in the application.
They are test mode pins used in manufacturing only.
Device high-current power ground.
Active Low input used to simultaneously tri-state disable both H-Bridge outputs. When
D2 is logic Low, both outputs are tri-stated.
Output 2 of H-Bridge.
Charge Pump Capacitor External reservoir capacitor connection for internal charge pump capacitor.
Active High input used to simultaneously tri-state disable both H-Bridge outputs. When
D1 is logic High, both outputs are tri-stated.
True logic input control of OUT2 (i.e., IN2 logic High = OUT2 logic High).
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 3. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent
damage to the device.
Rating
Supply Voltage
Input Voltage (1)
FS Status Output
(2)
Continuous Current (3)
Symbol
Value
Unit
V+
40
V
VIN
-0.1 to 7.0
V
V FS
7.0
V
IOUT
5.0
A
VESD1
±2000
VESD2
±200
TSTG
-65 to 150
C
TA
-40 to 125
C
TJ
-40 to 150
C
TPPRT
Note 7.
°C
RJB
~5.0
C/W
ESD Voltage for VW Package
Human Body Model
V
(4)
Machine Model (5)
Storage Temperature
Ambient Operating Temperature
(6)
Operating Junction Temperature
Peak Package Reflow Temperature During Reflow
(7), (8)
Approximate Junction-to-Board Thermal Resistance (and Package
Dissipation = 6.0 W) (9)
Notes
1.
2.
3.
4.
Exceeding the input voltage on IN1, IN2, D1, or D2 may cause a malfunction or permanent damage to the device.
Exceeding the pull-up resistor voltage on the open drain FS pin may cause permanent damage to the device.
Continuous current capability so long as junction temperature is  150C.
ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 ).
5.
ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 ).
6.
7.
The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heatsinking.
Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow
Temperature and Moisture Sensitivity Levels (MSL),
Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e.
MC33xxxD enter 33xxx), and review parametrics.
Exposed heatsink pad plus the power and ground pins comprise the main heat conduction paths. The actual RJB (junction-to-PC board)
values will vary depending on solder thickness and composition and copper trace.
8.
9.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
5
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions 5.0 V  V+  28 V and -40C  TA  125C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
V+
5.0
–
40
V
POWER SUPPLY
Operating Voltage Range (10)
Standby Supply Current
IQ (standby)
VEN = 5.0 V, IOUT = 0 A
mA
–
–
20
Threshold Supply Voltage
Switch-OFF
Switch-ON
Hysteresis
V+(THRES-OFF)
4.15
4.4
4.65
V+(THRES-ON)
4.5
4.75
5.0
V
V
V+(HYS)
150
–
–
mV
3.35
–
–
–
–
20
VIH
3.5
–
–
VIL
–
–
1.4
VHYS
0.7
1.0
–
-200
-80
–
–
25
100
CHARGE PUMP
Charge Pump Voltage
VCP - V+
V+ = 5.0 V
8.0 V  V+  40 V
V
CONTROL INPUTS
Input Voltage (IN1, IN2, D1, D2)
Threshold High
Threshold Low
Hysteresis
Input Current (IN1, IN2, D1)
(11)
V
D2 Input Current (12)
V D2 = 5.0 V
A
IIN
VIN = 0 V
A
I D2
Notes
10. Specifications are characterized over the range of 5.0 V  V+  28 V. Operation > 28 V will cause some parameters to exceed listed
min/max values. Refer to typical operating curves to extrapolate values for operation > 28 V but  40 V.
11. Inputs IN1, IN2, and D1 have independent internal pull-up current sources.
12. The D2 input incorporates an active internal pull-down current sink.
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 4. Static Electrical Characteristics
Characteristics noted under conditions 5.0 V  V+  28 V and -40C  TA  125C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
POWER OUTPUTS (OUT1, OUT2)
Output-ON Resistance (13)
RDS(ON)
m
5.0 V  V+  28 V, TJ = 25 °C
–
120
–
8.0 V  V+  28 V, TJ = 150 °C
–
–
225
5.0 V  V+  8.0 V, TJ = 150 °C
–
–
300
5.2
6.5
7.8
Active Current Limiting Threshold (via Internal Constant OFF-Time
PWM) (14)
ILIM
High Side Short-circuit Detection Threshold
ISCH
11
–
–
A
Low Side Short-circuit Detection Threshold
ISCL
8.0
–
–
A
VOUT = V+
–
100
200
VOUT = GND
–
30
60
–
–
2.0
TLIM
175
–
–
THYS
–
15
–
Leakage Current (15)
A
A
IOUT(LEAK)
Output FET Body Diode Forward Voltage Drop (16)
VF
IOUT = 3.0 A
V
Switch-OFF
°C
Thermal Shutdown
Hysteresis
FAULT STATUS (17)
Fault Status Leakage Current (18)
Fault Status Set Voltage
A
I FS(LEAK)
V FS = 5.0 V
–
(19)
I FS = 300 A
–
10
V FS(LOW)
V
–
–
1.0
Notes
13. Output-ON resistance as measured from output to V+ and ground.
14. Product with date codes of December 2002, week 51, will exhibit the values indicated in this table. Product with earlier date codes may
exhibit a minimum of 6.0 A and a maximum of 8.5 A.
15. Outputs switched OFF with D1 or D2.
16. Parameter is guaranteed by design but not production tested.
17. Fault Status output is an open drain output requiring a pull-up resistor to 5.0 V.
18. Fault Status Leakage Current is measured with Fault Status High and not set.
19. Fault Status Set Voltage is measured with Fault Status Low and set with I FS = 300 A.
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
DYNAMIC ELECTRICAL CHARACTERISTICS
Table 5. Dynamic Electrical Characteristics
Characteristics noted under conditions 5.0 V  V+  28 V and -40C  TA  125 C, unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25 C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
f PWM
–
–
10
kHz
f MAX
–
–
20
kHz
–
–
18
TIMING CHARACTERISTICS
PWM Frequency (20)
Maximum Switching Frequency During Active Current Limiting
Output ON Delay (22)
(21)
Output OFF Delay (22)
s
t D (OFF)
V+ = 14 V
Output Rise and Fall Time
s
t d (ON)
V+ = 14 V
(23)
–
–
18
2.0
5.0
8.0
s
tF , t R
V+ = 14 V, IOUT = 3.0 A
Output Latch-OFF Time
tA
15
20.5
26
s
Output Blanking Time
tB
12
16.5
21
s
t RR
100
–
–
ns
t D (DISABLE)
–
–
8.0
s
t FAULT
–
4.0
–
s
t POD
–
1.0
5.0
ms
Output FET Body Diode Reverse Recovery Time (24)
Disable Delay Time
(25)
Short-circuit / Overtemperature Turn-OFF Time (26)
Power-OFF Delay Time
Notes
20. The outputs can be PWM controlled from an external source. This is typically done by holding one input high while applying a PWM
pulse train to the other input. The maximum PWM frequency obtainable is a compromise between switching losses and switching
frequency. Refer to Typical Switching Waveforms, Figures 10 through 17, pp. 11–12.
21. The Maximum Switching Frequency during active current limiting is internally implemented. The internal control produces a constant
OFF-time PWM of the output. The output load current effects the Maximum Switching Frequency.
22. Output Delay is the time duration from the midpoint of the IN1 or IN2 input signal to the 10% or 90% point (dependent on the transition
direction) of the OUT1 or OUT2 signal. If the output is transitioning High-to-Low, the delay is from the midpoint of the input signal to the
90% point of the output response signal. If the output is transitioning Low-to-High, the delay is from the midpoint of the input signal to
the 10% point of the output response signal. See Figure 4, page 9.
23. Rise Time is from the 10% to the 90% level and Fall Time is from the 90% to the 10% level of the output signal. See Figure 6, page 9.
24. Parameter is guaranteed by design but not production tested.
25. Disable Delay Time is the time duration from the midpoint of the D (disable) input signal to 10% of the output tri-state response. See
Figure 5, page 9.
26. Increasing currents will become limited at ILIM. Hard shorts will breach the ISCH or ISCL limit, forcing the output into an immediate tristate latch-OFF. See Figures 8 and 9, page 10. Active current limiting will cause junction temperatures to rise. A junction temperature
above 160 C will cause the active current limiting to progressively “fold-back” (or decrease) to 2.5 A typical at 175 C where thermal
latch-OFF will occur. See Figure 7, page 9.
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
VIN1, IN2 (V)
TIMING DIAGRAMS
5.0
50%
VOUT1, 2 (V)
0
50%
td(OFF)
td(ON)
VPWR
90%
10%
0
TIME
Figure 4. Output Delay Time
5.0 V
0V

0
VOUT1, 2 (V)
Figure 5. Disable Delay Time
V PWR
tf
tr
90%
90%
10%
10%
0
IIMAX
CURRENT
(A) (A)
LIM, IOUTPUT
LIM, CURRENT
Figure 6. Output Switching Time
6.5
6.6
2.5
Thermal Shutdown
160
175
T J, JUNCTION TEMPERATURE (o C)
Figure 7. Active Current Limiting Versus Temperature (Typical)
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
ELECTRICAL CHARACTERISTICS
TIMING DIAGRAMS
Diode Reverse
FS,
SF LOGIC OUT
D2, LOGIC IN
D1, LOGIC IN
INn, LOGIC IN
IOUT
, CURRENT
(A) (A)
CURRENT
IILOAD
,, OUTPUT
OUT
Spikes
LoadRecovery
Capacitance
and/or
Diode Reverse Recovery Spikes
8.0
ISCL Short-circuit Detect Threshold
Typ.
Short Ckt. Detect Threshold
6.5
Typical
Current
Threshold
Typ.
Current
Limit Limiting
Threshold
for Low-Side FETs
PWM
Active
Current
Current
Limiting
Limiting
(See
Figure 6)
7)
(SeeFigure
(See
7)
Hard
and
Latch-OFF
HardShort
ShortDetect
Detect
and
Latch-Off
0
[1]
[0]
IN1
IN1IN2
IN2
or IN2
IN2
IN1 OR
IN2OR
orIN2
IN1
IN1
IN2
IN2 or
OR IN1
IN1OR
orIN1
IN2
IN2
[1]
[0]
[1]
[0]
[1]
Outputs
Outputs
Tristated
Tri-stated
OutputsOperational
Operational
Outputs
(perInput
InputControl
Control Condition)
Condition)
(per
Outputs
Tristated
Tri-stated
[0]
TIME
CURRENT
ILOAD
, OUTPUT
IOUT
, CURRENT
(A) (A)
Figure 8. Active Current Limiting Versus Time
IShort
Detect
Threshold
CircuitMinimum
Detect
Threshold
Overcurrent
Threshold
SCL Short-circuit
8.0
ta
tb
6.5
Output Latch-OFF
taa == Tristate
Output OFFTime
Time
Output Blanking
Time
ttbb ==Current
Limit Blank
Time
Typical Current
Typical
Load
LimitingPWM
Waveform
Current Limiting
Waveform
Hard Short
OutputDetect
Hard
Short Latch-OFF
Latch-off
Prevented During tb
TIME
Figure 9. Active Current Limiting Detail
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
TYPICAL SWITCHING WAVEFORMS
Important For all plots, the following applies:
• Ch2 = 2.0 A per division
• LLOAD = 533 H @ 1.0 kHz
• LLOAD = 530 H @ 10.0 kHz
• RLOAD = 4.0 
Output Voltage
(OUT1)
IOUT
Output Voltage
(OUT1)
Input Voltage
(IN1)
V+=34 V
IOUT
fPWM =1.0 kHz
Duty Cycle=90%
Figure 12. Output Voltage and Current vs. Input Voltage
at V+ = 34 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 90%, Showing Device in
Current Limiting Mode
Input Voltage
(IN1)
V+=24 V
fPWM =1.0 kHz
Duty Cycle=10%
Figure 10. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 10%
Output Voltage
(OUT1)
IOUT
Output Voltage
(OUT1)
Input Voltage
(IN1)
IOUT
V+=22 V
Input Voltage
(IN1)
V+=24 V
fPWM =1.0 kHz
Duty Cycle=50%
fPWM =1.0 kHz
Duty Cycle=90%
Figure 13. Output Voltage and Current vs. Input Voltage
at V+ = 22 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 90%
Figure 11. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 50%
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
11
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
Output Voltage
(OUT1)
Output Voltage
(OUT1)
IOUT
IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=24 V
fPWM =10 kHz
V+=12 V
Duty Cycle=50%
Figure 14. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 10 kHz,
and Duty Cycle of 50%
Output Voltage
(OUT1)
IOUT
IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
fPWM =10 kHz
Duty Cycle=90%
Figure 15. Output Voltage and Current vs. Input Voltage
at V+ = 24 V, PMW Frequency of 10 kHz,
and Duty Cycle of 90%
Duty Cycle=50%
Figure 16. Output Voltage and Current vs. Input Voltage
at V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 50% for a Purely Resistive Load
Output Voltage
(OUT1)
V+=24 V
fPWM =20 kHz
V+=12 V
fPWM =20 kHz
Duty Cycle=90%
Figure 17. Output Voltage and Current vs. Input Voltage
at V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 90% for a Purely Resistive Load
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
TYPICAL SWITCHING WAVEFORMS
Table 6. Truth Table
The tri-state conditions and the fault status are reset using D1 or D2. The truth table uses the following notations: L = Low,
H = High, X = High or Low, and Z = High-impedance (all output power transistors are switched off).
Fault Status
Flag
Input Conditions
Device State
Output States
D1
D2
IN1
IN2
FS
OUT1
OUT2
Forward
L
H
H
L
H
H
L
Reverse
L
H
L
H
H
L
H
Freewheeling Low
L
H
L
L
H
L
L
Freewheeling High
L
H
H
H
H
H
H
Disable 1 (D1)
H
X
X
X
L
Z
Z
Disable 2 (D2)
X
L
X
X
L
Z
Z
IN1 Disconnected
L
H
Z
X
H
H
X
IN2 Disconnected
L
H
X
Z
H
X
H
D1 Disconnected
Z
X
X
X
L
Z
Z
D2 Disconnected
X
Z
X
X
L
Z
Z
(27)
X
X
X
X
L
Z
Z
X
X
X
X
L
Z
Z
X
X
X
X
L
Z
Z
Undervoltage
Overtemperature (28)
Short Circuit
(28)
Notes
27. In the case of an undervoltage condition, the outputs tri-state and the fault status is set logic Low. Upon undervoltage recovery, fault
status is reset automatically or automatically cleared and the outputs are restored to their original operating condition.
28. When a short-circuit or overtemperature condition is detected, the power outputs are tri-state latched-OFF independent of the input
signals and the fault status flag is set logic Low.
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
ELECTRICAL PERFORMANCE CURVES
0.40
0.35
0.30
Ohms
0.25
0.20
0.15
0.10
0.05
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
Figure 18. Typical High Side RDS(ON) Versus V+
0.13
Ohms
OHMS
0.128
0.126
0.124
0.122
0.12
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
VPWR
Figure 19. Typical Low Side RDS(ON) Versus V+
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Analog Integrated Circuit Device Data
Freescale Semiconductor
ELECTRICAL CHARACTERISTICS
ELECTRICAL PERFORMANCE CURVES
9.0
8.0
7.0
milliOHMS
amperes
6.0
5.0
4.0
3.0
2.0
1.0
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
VPWR
Figure 20. Typical Quiescent Supply Current Versus V+
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
FUNCTIONAL DESCRIPTION
INTRODUCTION
FUNCTIONAL DESCRIPTION
INTRODUCTION
Numerous protection and operational features (speed,
torque, direction, dynamic braking, and PWM control), in
addition to the 5.0 A current capability, make the 33886 a
very attractive, cost-effective solution for controlling a broad
range of fractional horsepower DC motors. A pair of 33886
devices can be used to control bipolar stepper motors in both
directions. In addition, the 33886 can be used to control
permanent magnet solenoids in a push-pull variable force
fashion using PWM control. The 33886 can also be used to
excite transformer primary windings with a switched square
wave to produce secondary winding AC currents.
As shown in Figure 2, Simplified Internal Block Diagram,
page 3, the 33886 is a fully protected monolithic H-Bridge
with Fault Status reporting. For a DC motor to run the input
conditions need be as follows: D1 input logic Low, D2 input
logic High, FS flag cleared (logic High), with one IN logic Low
and the other IN logic High to define output polarity. The
33886 can execute dynamic braking by simultaneously
turning on either both high side MOSFETs or both low side
MOSFETs in the output H-Bridge; e.g., IN1 and IN2 logic
High or IN1 and IN2 logic Low.
The 33886 outputs are capable of providing a continuous DC
load current of 5.0 A from a 40 V V+ source. An internal
charge pump supports PWM frequencies up to 10 kHz. An
external pull-up resistor is required for the open drain FS pin
for fault status reporting.
Two independent inputs (IN1 and IN2) provide control of the
two totem-pole half-bridge outputs. Two disable inputs (D1
and D2) are for forcing the H-Bridge outputs to a highimpedance state (all H-Bridge switches OFF).
The 33886 has undervoltage shutdown with automatic
recovery, active current limiting, output short-circuit latchOFF, and overtemperature latch-OFF. An undervoltage
shutdown, output short-circuit latch-OFF, or overtemperature
latch-OFF fault condition will cause the outputs to turn OFF
(i.e., become high-impedance or tri-stated) and the fault
output flag to be set Low. Either of the Disable inputs or V+
must be “toggled” to clear the fault flag.
The short-circuit / overtemperature shutdown scheme is
unique and best described as using a junction temperaturedependent active current “fold back” protection scheme.
When a short-circuit condition is experienced, the current
limited output is “ramped down” as the junction temperature
increases above 160 C, until at 175 C the current has
decreased to about 2.5 A. Above 175 C, overtemperature
shutdown (latch-OFF) occurs. This feature allows the device
to remain in operation for a longer time with unexpected
loads, while still retaining adequate protection for both the
device and the load.
FUNCTIONAL PIN DESCRIPTION
POWER/ANALOG GROUNDS (PGND AND AGND)
FAULT STATUS (FS)
Power and analog ground pins. The power and analog
ground pins should be connected together with a very lowimpedance connection.
This pin is the device fault status output. This output is an
active Low open drain structure requiring a pull-up resistor to
5.0 V. Refer to Table 6, Truth Table, page 13.
POSITIVE POWER SUPPLY (V+)
LOGIC INPUT 1, 2 AND DISABLE1, 2 (IN1, IN2, D1,
AND D2)
V+ pins are the power supply inputs to the device. All V+ pins
must be connected together on the printed circuit board with
as short as possible traces offering as low-impedance as
possible between pins.
V+ pins have an undervoltage threshold. If the supply voltage
drops below a V+ undervoltage threshold, the output power
stage switches to a tri-state condition and the fault status flag
is set and the Fault Status pin voltage switched to a logic Low.
When the supply voltage returns to a level that is above the
threshold, the power stage automatically resumes normal
operation according to the established condition of the input
pins and the fault status flag is automatically reset logic High.
These pins are input control pins used to control the outputs.
These pins are 5.0 V CMOS-compatible inputs with
hysteresis. The IN1 and IN2 independently control OUT1 and
OUT2, respectively. D1 and D2 are complimentary inputs
used to tri-state disable the H-Bridge outputs.
When either D1 or D2 is set (D1 = logic High or D2 = logic
Low) in the disable state, outputs OUT1 and OUT2 are both
tri-state disabled; however, the rest of the device circuitry is
fully operational and the supply IQ (STANDBY) current is
reduced to a few milliamperes. Refer to Table 6, Truth Table,
and Static Electrical Characteristics table, page 6.
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DESCRIPTION
FUNCTIONAL PIN DESCRIPTION
H-BRIDGE OUTPUT 1, 2 (OUT1 AND OUT2)
These pins are the outputs of the H-Bridge with integrated
output FET body diodes. The bridge output is controlled using
the IN1, IN2, D1, and D2 inputs. The outputs have active
current limiting above 6.5 A. The outputs also have thermal
shutdown (tri-state latch-OFF) with hysteresis as well as
short-circuit latch-OFF protection.
A disable timer (time t B) incorporated to detect currents that
are higher than active current limit is activated at each output
activation to facilitate detecting hard output short conditions
(see Figure 9, page 10).
CHARGE PUMP CAPACITOR (CCP)
Charge pump output pin. A filter capacitor (up to 33 nF) can
be connected from the CCP pin and PGND. The device can
operate without the external capacitor, although the CCP
capacitor helps to reduce noise and allows the device to
perform at maximum speed, timing, and PWM frequency.
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
17
FUNCTIONAL DEVICE OPERATION
FUNCTIONAL PIN DESCRIPTION
FUNCTIONAL DEVICE OPERATION
SHORT-CIRCUIT PROTECTION
If an output short-circuit condition is detected, the power
outputs tri-state (latch-OFF) independent of the input (IN1
and IN2) states, and the fault status output flag is set logic
Low. If the D1 input changes from logic High to logic Low, or
if the D2 input changes from logic Low to logic High, the
output bridge will become operational again and the fault
status flag will be reset (cleared) to a logic High state.
The output stage will always switch into the mode defined by
the input pins (IN1, IN2, D1, and D2), provided the device
junction temperature is within the specified operating
temperature.
ACTIVE CURRENT LIMITING
The maximum current flow under normal operating
conditions is internally limited to ILIM (5.2 A to 7.8 A). When
the maximum current value is reached, the output stages are
tri-stated for a fixed time (t a) of 20 s typical. Depending on
the time constant associated with the load characteristics, the
current decreases during the tri-state duration until the next
output ON cycle occurs (see Figures 9 and 12, page 10 and
page 11, respectively).
The current limiting threshold value is dependent upon the
device junction temperature. When -40 C < TJ < 160 C, ILIM
is between 5.2 A and 7.8 A. When TJ exceeds 160 C, the
ILIM current decreases linearly down to 2.5 A typical at
175 C. Above 175C the device overtemperature circuit
detects TLIM and overtemperature shutdown occurs (see
Figure 7, page 9). This feature allows the device to remain
operational for a longer time but at a regressing output
performance level at junction temperatures above 160 C.
OVERTEMPERATURE SHUTDOWN AND
HYSTERESIS
If an overtemperature condition occurs, the power outputs
are tri-state (latched-OFF) independent of the input signals
and the fault status flag is set logic Low.
To reset from this condition, D1 must change from logic High
to logic Low, or D2 must change from logic Low to logic High.
When reset, the output stage switches ON again, provided
that the junction temperature is now below the
overtemperature threshold limit minus the hysteresis.
Note Resetting from the fault condition will clear the fault
status flag.
MAIN DIFFERENCES COMPARED TO
MC33186DH1
• COD pin has been removed. Pin 8 is now a Do Not
Connect (DNC) pin.
• Pin 20 is no longer connected in the 20 HSOP package. It
is now a DNC pin.
• RDS(ON) max at TJ = 150 °C is now 225 m per each
output transistor.
• Maximum temperature operation is now 160 °C, as
minimum thermal shutdown temperature has increased.
• Current regulation limiting foldback is implemented above
160 °C TJ.
• Thermal resistance junction to case has been increased
from ~2.0 °C/W to ~5.0 °C/W.
33886
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Analog Integrated Circuit Device Data
Freescale Semiconductor
FUNCTIONAL DEVICE OPERATION
PERFORMANCE
PERFORMANCE
The 33886 is designed for enhanced thermal performance.
The significant feature of this device is the exposed copper
pad on which the power die is soldered. This pad is soldered
on a PCB to provide heat flow to ambient and also to provide
thermal capacitance. The more copper area on the PCB, the
better the power dissipation and transient behavior will be.
Example Characterization on a double-sided PCB: bottom
side area of copper is 7.8 cm2; top surface is 2.7 cm2 (see
Figure 21); grid array of 24 vias 0.3 mm in diameter.
Figure 22 shows the thermal response with the device
soldered on to the test PCB described in Figure 21.
100
10
Rth (¬¨ÐóC
1
0,1
0,001
0,01
0,1
1
10
t, Time (s)
100
1000
10000
Figure 22. 33886 Thermal Response
Top Side
Bottom Side
Figure 21. PCB Test Layout
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
19
TYPICAL APPLICATIONS
TYPICAL APPLICATIONS
environments, the V+ by-pass capacitor may need to be
substantially larger.
A typical application schematic is shown in Figure 23. For
precision high-current applications in harsh, noisy
DC
MOTOR
V+
33886
AGND
V+
CCP
OUT1
33 nF
+
47 F
OUT2
D2
D1
FS
PGND
IN1
IN2
IN2
IN1
FS
D1
D2
Figure 23. 33886 Typical Application Schematic
33886
20
Analog Integrated Circuit Device Data
Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
PACKAGING
PACKAGE DIMENSIONS
Important For the most current revision of the package, visit www.freescale.com and perform a keyword search on 98ASH70702A listed.
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
21
PACKAGING
PACKAGE DIMENSIONS
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
33886
22
Analog Integrated Circuit Device Data
Freescale Semiconductor
PACKAGING
PACKAGE DIMENSIONS
VW (Pb-FREE) SUFFIX
20-PIN HSOP
98ASH70702A
ISSUE B
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
23
5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
5.0 A H-BRIDGE
33886HSOP
THERMAL ADDENDUM - REVISION 2.0
Introduction
This thermal addendum is provided as a supplement to the MC33186 technical
data sheet. The addendum provides thermal performance information that may
be critical in the design and development of system applications. All electrical,
application, and packaging information is provided in the data sheet.
20-PIN HSOP-EP
Packaging and Thermal Considerations
The MC33186 is offered in a 20 pin HSOP exposed pad, single die package.
There is a single heat source (P), a single junction temperature (TJ), and thermal
resistance (RJA).
TJ
=
RJA
.
VW (Pb-FREE) SUFFIX
98ASH70702A
20-PIN HSOP-EP
P
The stated values are solely for a thermal performance comparison of one
package to another in a standardized environment. This methodology is not
meant to and will not predict the performance of a package in an applicationspecific environment. Stated values were obtained by measurement and
simulation according to the standards listed below.
Note For package dimensions, refer to
the 33886 device data sheet.
Standards
Table 7.
Thermal Performance Comparison
Thermal Resistance
C/W]
RJA(1)(2)
20
RJB(2)(3)
6.0
RJA(1)(4)
52
RJC
(5)
1.0
1.0
0.2
1.0
0.2
* All measurements
are in millimeters
NOTES:
Soldermast
openings
1.Per JEDEC JESD51-2 at natural convection, still air condition.
2.2s2p thermal test board per JEDEC JESD51-5 and JESD51-7.
3.Per JEDEC JESD51-8, with the board temperature on the center
trace near the center lead.
4.Single layer thermal test board per JEDEC JESD51-3 and
JESD51-5.
5.Thermal resistance between the die junction and the exposed
pad surface; cold plate attached to the package bottom side,
remaining surfaces insulated.
20 Terminal HSOP-EP
1.27 mm Pitch
16.0 mm x 11.0 mm Body
12.2 mm x 6.9 mm Exposed Pad
Thermal vias
connected to top
buried plane
Figure 24. Thermal Land Pattern for Direct Thermal
Attachment According to JESD51-5
33886
24
Analog Integrated Circuit Device Data
Freescale Semiconductor
5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
A
AGND
FS
IN1
V+
V+
OUT1
OUT1
DNC
PGND
PGND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
DNC
IN2
D1
CCP
V+
OUT2
OUT2
D2
PGND
PGND
33886 Pin Connections
20-Pin HSOP
1.27 mm Pitch
16.0 mm x 11.0 mm Body
12.2 mm x 6.9 mm Exposed Pad
Figure 25. Thermal Test Board
Device on Thermal Test Board
Material:
Outline:
Single layer printed circuit board
FR4, 1.6 mm thickness
Cu traces, 0.07 mm thickness
80 mm x 100 mm board area,
including edge connector for thermal
testing
Area A:
Cu heat-spreading areas on board
surface
Ambient Conditions:
Natural convection, still air
Table 8.
Thermal Resistance Performance
Thermal
Resistance
Area A (mm2)
C/W
RJA
0.0
52
300
36
600
32
0.0
10
300
7.0
600
6.0
RJS
RJAis the thermal resistance between die junction and
ambient air.
RJS is the thermal resistance between die junction and the
reference location on the board surface near a center lead of the
package (see Figure 25).
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
25
Thermal Resistance [ºC/W]
5.0 A H-BRIDGE
THERMAL ADDENDUM - REVISION 2.0
60
50
40
30
x
RJA
20
10
0
0
300
Heat spreading area A [mm²]
600
Figure 26. Device on Thermal Test Board RJA
Thermal Resistance [ºC/W]
100
x
RJA
10
1
0.1
1.00E-03
1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E+03 1.00E+04
time[s]
Time(s)
Figure 27. Transient Thermal Resistance RJA
Device on Thermal Test Board Area A = 600 (mm2)
33886
26
Analog Integrated Circuit Device Data
Freescale Semiconductor
REVISION HISTORY
REVISION HISTORY
Revision
Date
7.0
7/2005
8.0
2/2007
9.0
3/2011
10.0
01/2014
Description of Changes
•
•
•
Implemented Revision History page
Added Thermal Addendum
Converted to Freescale format
•
•
Updated data sheet format
Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from
Maximum Ratings on page 5. Added note with instructions to obtain this information from
www.freescale.com.
•
Removed part number MC33886VW/R2 and added part number MC33886PVW/R2 to the ordering
Information on page 1.
Updated package drawing.
Removed all DH package information.
Updated form and style
•
•
•
•
No technical changes. Revised back page. Updated document properties. Added SMARTMOS
sentence to last paragraph.
33886
Analog Integrated Circuit Device Data
Freescale Semiconductor
27
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Document Number: MC33886
Rev 10.0
01/2014