MOTOROLA MC33886

Freescale Semiconductor, Inc.
MOTOROLA
Document order number: MC33886/D
Rev 6.0, 03/2004
SEMICONDUCTOR TECHNICAL DATA
33886
5.0 A H-Bridge
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The 33886 is a monolithic H-Bridge ideal for fractional horsepower
DC-motor and bi-directional thrust solenoid control. The IC incorporates
internal control logic, charge pump, gate drive, and low RDS(ON) MOSFET
output circuitry. The 33886 is able to control continuous inductive DC load
currents up to 5.0 A. Output loads can be pulse width modulated (PWM-ed)
at frequencies up to 10 kHz.
5.0 A H-BRIDGE
A Fault Status output reports undervoltage, short circuit, and
overtemperature conditions. Two independent inputs control the two halfbridge totem-pole outputs. Two disable inputs force the H-Bridge outputs to
tri-state (exhibit high impedance).
The 33886 is parametrically specified over a temperature range of
-40°C ≤ TA ≤ 125°C, 5.0 V ≤ V+ ≤ 28 V. The IC can also be operated up to 40 V
with derating of the specifications. The IC is available in a surface mount
power package with exposed pad for heatsinking.
Features
• Similar to the MC33186DH1 with Enhanced Features
• 5.0 V to 40 V Continuous Operation
• 120 mΩ RDS(ON) H-Bridge MOSFETs
• TTL /CMOS Compatible Inputs
• PWM Frequencies up to 10 kHz
• Active Current Limiting via Internal Constant OFF-Time PWM (with
Temperature-Dependent Threshold Reduction)
• Output Short Circuit Protection
• Undervoltage Shutdown
• Fault Status Reporting
• Pb-Free Packaging Designated by Suffix Code VW
DH SUFFIX
VW (Pb-FREE) SUFFIX
CASE 979C-02
20-TERMINAL HSOP
ORDERING INFORMATION
Device
MC33886DH/R2
MC33886VW/R2
Simplified Application Diagram
33886 Simplified Application Diagram
V+
33886
33886
5.0 V
CCP
IN
OUT
MCU OUT
OUT
OUT
© Motorola, Inc. 2004
V+
OUT1
FS
IN1
IN2
D1
D2
Motor
OUT2
PGND
AGND
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Temperature
Range (TA)
Package
-40°C to 125°C
20 HSOP
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C
CCP
CP
VPWR
V+
Charge
Pump
80
µA
80 uA
(each)
OUT1
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IN1
IN2
D1
D2
Current Limit,
Limit,
Current
Overcurrent
Short Circuit
Sense
Sense
Circuit
Circuit
5.0 V
Regulator
Regulator
Gate Drive
OUT2
25
µA
25 uA
Control
Logic
OverOvertemperature
temperature
Undervoltage
FS
AGND
PGND
Figure 1. 33886 Simplified Internal Block Diagram
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AGND
1
20
DNC
FS
2
19
IN2
IN1
3
18
D1
V+
4
17
CCP
V+
5
16
V+
OUT1
6
15
OUT2
OUT1
7
14
OUT2
DNC
8
13
D2
PGND
9
12
PGND
PGND
10
11
PGND
TERMINAL FUNCTION DESCRIPTION
Terminal
Terminal
Name
Formal Name
1
AGND
Analog Ground
2
FS
Fault Status for H-Bridge
3
IN1
Logic Input Control 1
4, 5, 16
V+
Positive Power Supply
6, 7
OUT1
H-Bridge Output 1
8, 20
DNC
Do Not Connect
9–12
PGND
Power Ground
13
D2
Disable 2
14, 15
OUT2
H-Bridge Output 2
17
CCP
Charge Pump Capacitor
18
D1
Disable 1
19
IN2
Logic Input Control 2
Definition
Low-current analog signal ground.
Open drain active Low Fault Status output requiring a pull-up resistor to 5.0 V.
True logic input control of OUT1 (i.e., IN1 logic High = OUT1 logic High).
Positive supply connections.
Output 1 of H-Bridge.
Either do not connect (leave floating) or connect these terminals to ground in the
application. They are test mode terminals used in manufacturing only.
Device high-current power ground.
Active Low input used to simultaneously tri-state disable both H-Bridge outputs.
When D2 is logic Low, both outputs are tri-stated.
Output 2 of H-Bridge.
External reservoir capacitor connection for internal charge pump capacitor.
Active High input used to simultaneously tri-state disable both H-Bridge outputs.
When D1 is logic High, both outputs are tri-stated.
True logic input control of OUT2 (i.e., IN2 logic High = OUT2 logic High).
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MAXIMUM RATINGS
All voltages are with respect to ground unless otherwise noted.
Rating
Symbol
Value
Unit
Supply Voltage
V+
40
V
Input Voltage (Note 1)
VIN
-0.1 to 7.0
V
FS Status Output (Note 2)
V FS
7.0
V
Continuous Current (Note 3)
IOUT
5.0
A
VESD1
±2000 (Note 6)
±200
V
ESD Voltage for DH Package
Human Body Model (Note 4)
Machine Model (Note 5)
VESD2
V
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ESD Voltage for VW Package
VESD1
VESD2
±2000
±200
TSTG
-65 to 150
°C
Ambient Operating Temperature (Note 7)
TA
-40 to 125
°C
Operating Junction Temperature
TJ
-40 to 150
°C
Human Body Model (Note 4)
Machine Model (Note 5)
Storage Temperature
°C
TSOLDER
Terminal Soldering Temperature (Note 8)
DH Suffix
220
VW (Pb-Free Suffix)
260
Approximate Junction-to-Board Thermal Resistance (and Package
Dissipation = 6.0 W) (Note 9)
Notes
1.
2.
3.
4.
RθJB
~5.0
°C/W
Exceeding the input voltage on IN1, IN2, D1, or D2 may cause a malfunction or permanent damage to the device.
Exceeding the pull-up resistor voltage on the open drain FS terminal may cause permanent damage to the device.
Continuous current capability so long as junction temperature is ≤ 150°C.
ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω).
5.
ESD2 testing is performed in accordance with the Machine Model (CZAP = 200 pF, RZAP = 0 Ω).
6.
All terminals are capable of Human Body Model ESD voltages of ±2000 V with two exceptions pertaining only to the DH suffix package:
(1) D2 to PGND is capable of ±1500 V and (2) OUT1 to AGND is capable of ±1000 V.
The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heatsinking.
Terminal soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may
cause malfunction or permanent damage to the device.
Exposed heatsink pad plus the power and ground terminals comprise the main heat conduction paths. The actual RθJB (junction-to-PC board)
values will vary depending on solder thickness and composition and copper trace.
7.
8.
9.
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STATIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
V+
5.0
–
40
V
–
–
20
4.15
4.5
150
4.4
4.75
–
4.65
5.0
–
3.35
–
–
–
–
20
3.5
–
0.7
–
–
1.0
–
1.4
–
-200
-80
–
–
25
100
POWER SUPPLY
Operating Voltage Range (Note 10)
IQ(standby)
Standby Supply Current
mA
VEN = 5.0 V, IOUT = 0 A
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Threshold Supply Voltage
V+(thres-OFF)
V+(thres-ON)
V+(hys)
Switch-OFF
Switch-ON
Hysteresis
V
V
mV
CHARGE PUMP
VCP - V+
Charge Pump Voltage
V+ = 5.0 V
8.0 V ≤ V+ ≤ 40 V
V
CONTROL INPUTS
V
Input Voltage (IN1, IN2, D1, D2)
VIH
VIL
VHYS
Threshold High
Threshold Low
Hysteresis
µA
IIN
Input Current (IN1, IN2, D1) (Note 11)
VIN = 0 V
µA
I D2
D2 Input Current (Note 12)
V D2 = 5.0 V
Notes
10. Specifications are characterized over the range of 5.0 V ≤ V+ ≤ 28 V. Operation >28 V will cause some parameters to exceed listed min/max
values. Refer to typical operating curves to extrapolate values for operation >28 V but ≤ 40 V.
11. Inputs IN1, IN2, and D1 have independent internal pull-up current sources.
12. The D2 input incorporates an active internal pull-down current sink.
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STATIC ELECTRICAL CHARACTERISTICS (continued)
Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted reflect
the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
5.0 V ≤ V+ ≤ 28 V, TJ = 25°C
–
120
–
8.0 V ≤ V+ ≤ 28 V, TJ = 150°C
–
–
225
5.0 V ≤ V+ ≤ 8.0 V, TJ = 150°C
–
–
300
5.2
6.5
7.8
Unit
POWER OUTPUTS (OUT1, OUT2)
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mΩ
RDS(ON)
Output-ON Resistance (Note 13)
Active Current Limiting Threshold (via Internal Constant OFF-Time PWM)
(Note 14)
ILIM
High-Side Short Circuit Detection Threshold
ISCH
11
–
–
A
Low-Side Short Circuit Detection Threshold
ISCL
8.0
–
–
A
VOUT = V+
–
100
200
VOUT = GND
–
30
60
–
–
2.0
175
–
–
15
–
–
–
–
10
Leakage Current (Note 15)
A
µA
IOUT(leak)
Output FET Body Diode Forward Voltage Drop (Note 16)
V
VF
IOUT = 3.0 A
°C
Switch-OFF
Thermal Shutdown
Hysteresis
TLIM
THYS
FAULT STATUS (Note 17)
Fault Status Leakage Current (Note 18)
Fault Status Set Voltage (Note 19)
I FS = 300 µA
µA
I FS(leak)
V FS = 5.0 V
V
V FS(LOW)
–
–
1.0
Notes
13. Output-ON resistance as measured from output to V+ and ground.
14. Product with date codes of December 2002, week 51, will exhibit the values indicated in this table. Product with earlier date codes may exhibit
a minimum of 6.0 A and a maximum of 8.5 A.
15. Outputs switched OFF with D1 or D2.
16. Parameter is guaranteed by design but not production tested.
17. Fault Status output is an open drain output requiring a pull-up resistor to 5.0 V.
18. Fault Status Leakage Current is measured with Fault Status High and not set.
19. Fault Status Set Voltage is measured with Fault Status Low and set with I FS = 300 µA.
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DYNAMIC ELECTRICAL CHARACTERISTICS
Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40°C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted
reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
PWM Frequency (Note 20)
f PWM
–
–
10
kHz
Maximum Switching Frequency During Active Current Limiting (Note 21)
f MAX
–
–
20
kHz
Output ON Delay (Note 22)
t d (ON)
–
–
18
–
–
18
2.0
5.0
8.0
TIMING CHARACTERISTICS
V+ = 14 V
µs
t d(OFF)
Output OFF Delay (Note 22)
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µs
V+ = 14 V
µs
tf , t r
Output Rise and Fall Time (Note 23)
V+ = 14 V, IOUT = 3.0 A
Output Latch-OFF Time
ta
15
20.5
26
µs
Output Blanking Time
tb
12
16.5
21
µs
Output FET Body Diode Reverse Recovery Time (Note 24)
t rr
100
–
–
ns
t d(disable)
–
–
8.0
µs
t FAULT
–
4.0
–
µs
t pod
–
1.0
5.0
ms
Disable Delay Time (Note 25)
Short Circuit/Overtemperature Turn-OFF Time (Note 26)
Power-OFF Delay Time
Notes
20. The outputs can be PWM controlled from an external source. This is typically done by holding one input high while applying a PWM pulse
train to the other input. The maximum PWM frequency obtainable is a compromise between switching losses and switching frequency. Refer
to Typical Switching Waveforms, Figures 11 through 18, pp. 12–13.
21. The Maximum Switching Frequency during active current limiting is internally implemented. The internal control produces a constant OFFtime PWM of the output. The output load current effects the Maximum Switching Frequency.
22. Output Delay is the time duration from the midpoint of the IN1 or IN2 input signal to the 10% or 90% point (dependent on the transition
direction) of the OUT1 or OUT2 signal. If the output is transitioning High-to-Low, the delay is from the midpoint of the input signal to the 90%
point of the output response signal. If the output is transitioning Low-to-High, the delay is from the midpoint of the input signal to the 10%
point of the output response signal. See Figure 2, page 8.
23. Rise Time is from the 10% to the 90% level and Fall Time is from the 90% to the 10% level of the output signal. See Figure 4, page 8.
24. Parameter is guaranteed by design but not production tested.
25. Disable Delay Time is the time duration from the midpoint of the D (disable) input signal to 10% of the output tri-state response. See Figure 3,
page 8.
26. Increasing currents will become limited at ILIM. Hard shorts will breach the ISCH or ISCL limit, forcing the output into an immediate tri-state
latch-OFF. See Figures 6 and 7, page 9. Active current limiting will cause junction temperatures to rise. A junction temperature above 160°C
will cause the active current limiting to progressively "fold back" (or decrease) to 2.5 A typical at 175°C where thermal latch-OFF will occur.
See Figure 5, page 8.
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Timing Diagrams
VIN1, IN2 (V)
5.0
0
VOUT1, 2 (V)
50%
50%
td(OFF)
td(ON)
VPWR
90%
10%
0
TIME
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Figure 2. Output Delay Time
5.0 V
0V
∞Ω
0Ω
VOUT1, 2 (V)
Figure 3. Disable Delay Time
V PWR
tf
tr
90%
90%
10%
10%
0
IIMAX
CURRENT
(A) (A)
LIM, IOUTPUT
LIM, CURRENT
Figure 4. Output Switching Time
6.5
6.6
2.5
Thermal Shutdown
160
175
T J, JUNCTION TEMPERATURE (o C)
Figure 5. Active Current Limiting Versus Temperature (Typical)
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Diode Reverse
INn, LOGIC IN
D1, LOGIC IN
D2, LOGIC IN
FS,
SF LOGIC OUT
8.0
ISCL Short Circuit Detect Threshold
Typ.
Short Ckt. Detect Threshold
6.5
Typical
Current
Threshold
Typ.
Current
Limit Limiting
Threshold
for Low-Side FETs
PWM
Active
Current
Current
Limiting
Limiting
(See
Figure 6)
7)
(SeeFigure
(See
7)
Hard
and
Latch-OFF
HardShort
ShortDetect
Detect
and
Latch-Off
0
[1]
[0]
IN1
IN1IN2
IN2
or IN2
IN2
IN1 OR
IN2OR
orIN2
IN1
IN1
IN2
IN2 or
OR IN1
IN1OR
orIN1
IN2
IN2
[1]
[0]
[1]
[0]
[1]
Outputs
Outputs
Tristated
Tri-stated
OutputsOperational
Operational
Outputs
(perInput
InputControl
Control Condition)
Condition)
(per
Outputs
Tristated
Tri-stated
[0]
TIME
Figure 6. Active Current Limiting Versus Time
CURRENT
ILOAD
, OUTPUT
IOUT
, CURRENT
(A) (A)
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IOUT
, CURRENT
(A) (A)
CURRENT
IILOAD
,, OUTPUT
OUT
Spikes
LoadRecovery
Capacitance
and/or
Diode Reverse Recovery Spikes
IShort
Circuit
Detect
Threshold
Circuit
Detect
Threshold
Overcurrent
Minimum
Threshold
SCL Short
8.0
ta
tb
6.5
Output Latch-OFF
taa == Tristate
Output OFFTime
Time
Output Blanking
Time
ttbb ==Current
Limit Blank
Time
Typical Current
Typical
Load
LimitingPWM
Waveform
Current Limiting
Waveform
Hard Short
OutputDetect
Hard
Short Latch-OFF
Latch-Off
Prevented During tb
TIME
Figure 7. Active Current Limiting Detail
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Electrical Performance Curves
0.40
0.35
0.30
Ohms
0.20
0.15
0.10
0.05
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
33
35
37
39
41
Volts
Figure 8. Typical High-Side RDS(ON) Versus V+
0.13
0.128
Ohms
OHMS
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0.25
0.126
0.124
0.122
0.12
5
7
9
11
13
15
17
19
21
23
25
27
29
31
Volts
VPWR
Figure 9. Typical Low-Side RDS(ON) Versus V+
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9.0
8.0
7.0
OHMS
milliamperes
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6.0
5.0
4.0
3.0
2.0
1.0
0.0
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
Volts
VPWR
Figure 10. Typical Quiescent Supply Current Versus V+
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Typical Switching Waveforms
Important For all plots, the following applies:
• Ch2=2.0 A per division
• LLOAD =533 µH @ 1.0 kHz
• LLOAD =530 µH @ 10.0 kHz
• RLOAD =4.0 Ω
Output Voltage
(OUT1)
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Output Voltage
(OUT1)
IOUT
IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=24 V
fPWM =1.0 kHz
Duty Cycle=10%
Figure 11. Output Voltage and Current vs. Input Voltage at
V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 10%
V+=34 V
fPWM =1.0 kHz
Duty Cycle=90%
Figure 13. Output Voltage and Current vs. Input Voltage at
V+ = 34 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 90%, Showing Device in
Current Limiting Mode
Output Voltage
(OUT1)
Output Voltage
(OUT1)
IOUT
IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=24 V
fPWM =1.0 kHz
Duty Cycle=50%
Figure 12. Output Voltage and Current vs. Input Voltage at
V+ = 24 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 50%
33886
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V+=22 V
fPWM =1.0 kHz
Duty Cycle=90%
Figure 14. Output Voltage and Current vs. Input Voltage at
V+ = 22 V, PMW Frequency of 1.0 kHz,
and Duty Cycle of 90%
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Output Voltage
(OUT1)
Output Voltage
(OUT1)
IOUT
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IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
V+=24 V
fPWM =10 kHz
V+=12 V
Duty Cycle=50%
Figure 15. Output Voltage and Current vs. Input Voltage at
V+ = 24 V, PMW Frequency of 10 kHz,
and Duty Cycle of 50%
Output Voltage
(OUT1)
IOUT
IOUT
Input Voltage
(IN1)
Input Voltage
(IN1)
fPWM =10 kHz
Duty Cycle=90%
Figure 16. Output Voltage and Current vs. Input Voltage at
V+ = 24 V, PMW Frequency of 10 kHz,
and Duty Cycle of 90%
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
Duty Cycle=50%
Figure 17. Output Voltage and Current vs. Input Voltage at
V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 50% for a Purely Resistive Load
Output Voltage
(OUT1)
V+=24 V
fPWM =20 kHz
V+=12 V
fPWM =20 kHz
Duty Cycle=90%
Figure 18. Output Voltage and Current vs. Input Voltage at
V+ = 12 V, PMW Frequency of 20 kHz,
and Duty Cycle of 90% for a Purely Resistive Load
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Table 1. Truth Table
The tri-state conditions and the fault status are reset using D1 or D2. The truth table uses the following notations: L = Low, H = High,
X = High or Low, and Z = High impedance (all output power transistors are switched off).
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Fault Status
Flag
Input Conditions
Device State
Output States
D1
D2
IN1
IN2
FS
OUT1
OUT2
Forward
L
H
H
L
H
H
L
Reverse
L
H
L
H
H
L
H
Freewheeling Low
L
H
L
L
H
L
L
Freewheeling High
L
H
H
H
H
H
H
Disable 1 (D1)
H
X
X
X
L
Z
Z
Disable 2 (D2)
X
L
X
X
L
Z
Z
IN1 Disconnected
L
H
Z
X
H
H
X
IN2 Disconnected
L
H
X
Z
H
X
H
D1 Disconnected
Z
X
X
X
L
Z
Z
D2 Disconnected
X
Z
X
X
L
Z
Z
Undervoltage (Note 27)
X
X
X
X
L
Z
Z
Overtemperature (Note 28)
X
X
X
X
L
Z
Z
Short Circuit (Note 28)
X
X
X
X
L
Z
Z
Notes
27. In the case of an undervoltage condition, the outputs tri-state and the fault status is set logic Low. Upon undervoltage recovery, fault status
is reset automatically or automatically cleared and the outputs are restored to their original operating condition.
28. When a short circuit or overtemperature condition is detected, the power outputs are tri-state latched-OFF independent of the input signals
and the fault status flag is set logic Low.
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SYSTEM/APPLICATION INFORMATION
INTRODUCTION
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Numerous protection and operational features (speed,
torque, direction, dynamic braking, and PWM control), in
addition to the 5.0 A current capability, make the 33886 a very
attractive, cost-effective solution for controlling a broad range of
fractional horsepower DC motors. A pair of 33886 devices can
be used to control bipolar stepper motors in both directions. In
addition, the 33886 can be used to control permanent magnet
solenoids in a push-pull variable force fashion using PWM
control. The 33886 can also be used to excite transformer
primary windings with a switched square wave to produce
secondary winding AC currents.
As shown in Figure 1, Simplified Internal Block Diagram,
page 2, the 33886 is a fully protected monolithic H-Bridge with
Fault Status reporting. For a DC motor to run the input
conditions need be as follows: D1 input logic Low, D2 input logic
High, FS flag cleared (logic High), with one IN logic Low and the
other IN logic High to define output polarity. The 33886 can
execute dynamic braking by simultaneously turning on either
both high-side MOSFETs or both low-side MOSFETs in the
output H-Bridge; e.g., IN1 and IN2 logic High or IN1 and IN2
logic Low.
The 33886 outputs are capable of providing a continuous DC
load current of 5.0 A from a 40 V V+ source. An internal charge
pump supports PWM frequencies up to 10 kHz. An external
pull-up resistor is required for the open drain FS terminal for
fault status reporting.
Two independent inputs (IN1 and IN2) provide control of the
two totem-pole half-bridge outputs. Two disable inputs (D1 and
D2) are for forcing the H-Bridge outputs to a high impedance
state (all H-Bridge switches OFF).
The 33886 has undervoltage shutdown with automatic
recovery, active current limiting, output short-circuit latch-OFF,
and overtemperature latch-OFF. An undervoltage shutdown,
output short circuit latch-OFF, or overtemperature latch-OFF
fault condition will cause the outputs to turn OFF (i.e., become
high impedance or tri-stated) and the fault output flag to be set
Low. Either of the Disable inputs or V+ must be “toggled” to
clear the fault flag.
The short circuit/overtemperature shutdown scheme is
unique and best described as using a junction temperaturedependent active current “fold back” protection scheme. When
a short circuit condition is experienced, the current limited
output is “ramped down” as the junction temperature increases
above 160°C, until at 175°C the current has decreased to about
2.5 A. Above 175°C, overtemperature shutdown (latch-OFF)
occurs. This feature allows the device to remain in operation for
a longer time with unexpected loads, while still retaining
adequate protection for both the device and the load.
FUNCTIONAL TERMINAL DESCRIPTION
PGND and AGND
Fault Status (FS)
Power and analog ground terminals. The power and analog
ground terminals should be connected together with a very low
impedance connection.
This terminal is the device fault status output. This output is
an active Low open drain structure requiring a pull-up resistor to
5.0 V. Refer to Table 1, Truth Table, page 14.
V+
IN1, IN2, D1, and D2
V+ terminals are the power supply inputs to the device. All V+
terminals must be connected together on the printed circuit
board with as short as possible traces offering as low
impedance as possible between terminals.
These terminals are input control terminals used to control
the outputs. These terminals are 5.0 V CMOS-compatible
inputs with hysteresis. The IN1 and IN2 independently control
OUT1 and OUT2, respectively. D1 and D2 are complimentary
inputs used to tri-state disable the H-Bridge outputs.
V+ terminals have an undervoltage threshold. If the supply
voltage drops below a V+ undervoltage threshold, the output
power stage switches to a tri-state condition and the fault status
flag is set and the Fault Status terminal voltage switched to a
logic Low. When the supply voltage returns to a level that is
above the threshold, the power stage automatically resumes
normal operation according to the established condition of the
input terminals and the fault status flag is automatically reset
logic High.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
When either D1 or D2 is set (D1 = logic High or D2 = logic
Low) in the disable state, outputs OUT1 and OUT2 are both tristate disabled; however, the rest of the device circuitry is fully
operational and the supply IQ(standby) current is reduced to a few
milliamperes. Refer to Table 1, Truth Table, and STATIC
ELECTRICAL CHARACTERISTICS table, page 5.
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OUT1 and OUT2
CCP
These terminals are the outputs of the H-Bridge with
integrated output FET body diodes. The bridge output is
controlled using the IN1, IN2, D1, and D2 inputs. The outputs
have active current limiting above 6.5 A. The outputs also have
thermal shutdown (tri-state latch-OFF) with hysteresis as well
as short circuit latch-OFF protection.
Charge pump output terminal. A filter capacitor (up to 33 nF)
can be connected from the CCP terminal and PGND. The device
can operate without the external capacitor, although the CCP
capacitor helps to reduce noise and allows the device to
perform at maximum speed, timing, and PWM frequency.
A disable timer (time t b) incorporated to detect currents that
are higher than active current limit is activated at each output
activation to facilitate detecting hard output short conditions
(see Figure 7, page 9).
Freescale Semiconductor, Inc...
PERFORMANCE FEATURES
Short Circuit Protection
Overtemperature Shutdown and Hysteresis
If an output short circuit condition is detected, the power
outputs tri-state (latch-OFF) independent of the input (IN1 and
IN2) states, and the fault status output flag is set logic Low. If
the D1 input changes from logic High to logic Low, or if the D2
input changes from logic Low to logic High, the output bridge
will become operational again and the fault status flag will be
reset (cleared) to a logic High state.
If an overtemperature condition occurs, the power outputs
are tri-state (latched-OFF) independent of the input signals and
the fault status flag is set logic Low.
The output stage will always switch into the mode defined by
the input terminals (IN1, IN2, D1, and D2), provided the device
junction temperature is within the specified operating
temperature.
Note Resetting from the fault condition will clear the fault
status flag.
Main Differences Compared to MC33186DH1
Active Current Limiting
The maximum current flow under normal operating
conditions is internally limited to ILIM (5.2 A to 7.8 A). When the
maximum current value is reached, the output stages are tristated for a fixed time (t a) of 20 µs typical. Depending on the
time constant associated with the load characteristics, the
current decreases during the tri-state duration until the next
output ON cycle occurs (see Figures 7 and 13, page 9 and
page 12, respectively).
The current limiting threshold value is dependent upon the
device junction temperature. When -40°C < TJ < 160°C, ILIM is
between 5.2 A and 7.8 A. When TJ exceeds 160°C, the ILIM
current decreases linearly down to 2.5 A typical at 175°C.
Above 175°C the device overtemperature circuit detects TLIM
and overtemperature shutdown occurs (see Figure 5, page 8).
This feature allows the device to remain operational for a longer
time but at a regressing output performance level at junction
temperatures above 160°C.
33886
16
To reset from this condition, D1 must change from logic High
to logic Low, or D2 must change from logic Low to logic High.
When reset, the output stage switches ON again, provided that
the junction temperature is now below the overtemperature
threshold limit minus the hysteresis.
• COD terminal has been removed. Terminal 8 is now a Do
Not Connect (DNC) terminal.
• Terminal 20 is no longer connected in the 20 HSOP
package. It is now a DNC terminal.
• RDS(ON) max at TJ = 150°C is now 225 mΩ per each output
transistor.
• Maximum temperature operation is now 160°C, as
minimum thermal shutdown temperature has increased.
• Current regulation limiting foldback is implemented above
160°C TJ.
• Thermal resistance junction to case has been increased
from ~2.0°C/W to ~5.0°C/W.
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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PACKAGE INFORMATION
The 33886 is designed for enhanced thermal performance.
The significant feature of this device is the exposed copper pad
on which the power die is soldered. This pad is soldered on a
PCB to provide heat flow to ambient and also to provide thermal
capacitance. The more copper area on the PCB, the better the
power dissipation and transient behavior will be.
Example Characterization on a double-sided PCB: bottom
side area of copper is 7.8 cm2; top surface is 2.7 cm2 (see
Figure 19); grid array of 24 vias 0.3 mm in diameter.
Figure 20 shows the thermal response with the device
soldered on to the test PCB described in Figure 19.
100
10
Rth (°C/W)
Freescale Semiconductor, Inc...
1
0,1
0,001
0,01
0,1
1
10
t, Time (s)
100
1000
10000
Figure 20. 33886 Thermal Response
Top Side
Bottom Side
Figure 19. PCB Test Layout
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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APPLICATIONS
A typical application schematic is shown in Figure 21. For
precision high-current applications in harsh, noisy
environments, the V+ by-pass capacitor may need to be
substantially larger.
DC
MOTOR
V+
33886
AGND
V+
Freescale Semiconductor, Inc...
CCP
OUT1
33 nF
+
47 µF
OUT2
D2
D1
FS
PGND
IN1
IN2
IN2
IN1
FS
D1
D2
Figure 21. 33886 Typical Application Schematic
33886
18
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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PACKAGE DIMENSIONS
DH SUFFIX
VW (Pb-FREE) SUFFIX
20-TERMINAL HSOP
PLASTIC PACKAGE
CASE 979C-02
ISSUE A
PIN ONE ID
h
X 45 °
E2
20
1
D1
D
e/2
10
B
11
EXPOSED
HEATSINK AREA
E1
E
bbb
M
E4
A
10X
BOTTOM VIEW
C B
Y
H
DATUM
PLANE
b1
A A2
c1
c
C
SEATING
PLANE
b
aaa
C A
L1
q
W
W
L
A3
bbb C
M
SECTION W-W
GAUGE
PLANE
A1
Freescale Semiconductor, Inc...
D2
e
18X
E3
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994.
3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND
IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS
THE PLASTIC BODY AT THE BOTTOM OF THE PARTING
LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS 0.150 PER
SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD
MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-.
5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL
IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE
-H-.
7. DIMENSION D DOES NOT INCLUDE TIEBAR PROTRUSIONS.
ALLOWABLE TIEBAR PROTRUSIONS ARE 0.150 PER SIDE.
(1.600)
MILLIMETERS
DIM MIN
MAX
A 3.000 3.400
A1 0.100 0.300
A2 2.900 3.100
A3
0.00 0.100
D 15.800 16.000
D1 11.700 12.600
D2 0.900 1.100
E 13.950 14.450
E1 10.900 11.100
E2 2.500 2.700
E3 6.400 7.200
E4 2.700 2.900
L 0.840 1.100
L1
0.350 BSC
b 0.400 0.520
b1 0.400 0.482
c 0.230 0.320
c1 0.230 0.280
e
1.270 BSC
h
--- 1.100
q
0°
8°
aaa
0.200
bbb
0.100
DETAIL Y
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
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Freescale Semiconductor, Inc.
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MC33886/D