INTERSIL HA

HA-5127, HA-5127A
®
Data Sheet
July 27, 2005
FN2906.6
8.5MHz, Ultra-Low Noise
Precision Operational Amplifier
Features
The HA-5127 monolithic operational amplifier features an
unparalleled combination of precision DC and wideband
high speed characteristics. Utilizing the Intersil D. I.
technology and advanced processing techniques, this
unique design unites low noise (3nV/√Hz) precision
instrumentation performance with high speed (10V/µs)
wideband capability.
• Unity Gain Bandwidth. . . . . . . . . . . . . . . . . . . . . . 8.5MHz
• Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/µs
This amplifier’s impressive list of features include low VOS
(10µV), wide unity gain-bandwidth (8.5MHz), high open loop
gain (1800V/mV), and high CMRR (126dB). Additionally, this
flexible device operates over a wide supply range (±5V to
±15V) while consuming only 140mW of power.
Using the HA-5127 allows designers to minimize errors while
maximizing speed and bandwidth.
This device is ideally suited for low level transducer signal
amplifier circuits. Other applications which can utilize the
HA-5127’s qualities include instrumentation amplifiers, pulse
amplifiers, audio preamplifiers, and signal conditioning
circuits. This device can easily be used as a design
enhancement by directly replacing the 725, OP25, OP06,
OP07, OP27 and OP37. For the military grade product, refer
to the HA-5127/883 data sheet.
Pinout
HA-5127
(CERDIP, SOIC)
TOP VIEW
BAL
1
-IN
2
+IN
3
V-
4
8 BAL
7 V+
+
6 OUT
5 NC
1
• Low Noise . . . . . . . . . . . . . . . . . . . . . . . 3nV/√Hz at 1kHz
• Low VOS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10µV
• High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126dB
• High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800V/mV
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• High Speed Signal Conditioners
• Wide Bandwidth Instrumentation Amplifiers
• Low Level Transducer Amplifiers
• Fast, Low Level Voltage Comparators
• Highest Quality Audio Preamplifiers
• Pulse/RF Amplifiers
Ordering Information
PART NUMBER
(BRAND)
TEMP.
RANGE (oC)
PACKAGE
PKG.
DWG. #
HA7-5127A-5
0 to 75
8 Ld CERDIP
F8.3A
HA9P5127-5
(H51275)
0 to 75
8 Ld SOIC
M8.15
HA9P5127-5Z
(H51275Z) (Note)
0 to 75
8 Ld SOIC
(Pb-free)
M8.15
8 Ld SOIC Tape and Reel
(Pb-free)
M8.15
HA9P5127-5ZX96
(H51275Z) (Note)
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HA-5127, HA-5127A
Absolute Maximum Ratings
Thermal Information
Supply Voltage Between V+ and V- Terminals . . . . . . . . . . . . . 44V
Differential Input Voltage (Note 3) . . . . . . . . . . . . . . . . . . . . . . . 0.7V
Output Current . . . . . . . . . . . . . . . . . . . . Full Short Circuit Protection
Thermal Resistance (Typical, Note 2)
θJA (oC/W) θJC (oC/W)
CERDIP Package. . . . . . . . . . . . . . . . . . .
115
28
SOIC Package . . . . . . . . . . . . . . . . . . . . .
157
N/A
Maximum Junction Temperature (Ceramic Package, Note 1). . .175oC
Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range
HA5127/27A-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Maximum power dissipation, including output load must be designed to maintain the maximum junction temperature below 175oC for Hermetic
packages, and below 150oC for the plastic packages.
2. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. For differential input voltages greater than 0.7V, the input current must be limited to 25mA to protect the back-to-back input diodes.
VSUPPLY = ±15V, CL < 50pF, RS < 100Ω
Electrical Specifications
PARAMETER
TEST CONDITIONS
HA-5127A
HA-5127
TEMP.
(oC)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
INPUT CHARACTERISTICS
25
-
10
25
-
30
100
µV
Full
-
30
60
-
70
300
µV
Average Offset Voltage Drift
Full
-
0.2
0.6
-
0.4
1.8
µV/oC
Bias Current
25
-
±10
±40
-
±15
±80
nA
Full
-
±20
±60
-
±35
±150
nA
25
-
7
35
-
12
75
nA
Offset Voltage
Offset Current
Common Mode Range
Differential Input Resistance (Note 4)
Full
-
15
50
-
30
135
nA
Full
±10.3
±11.5
-
±10.3
±11.5
-
V
25
1.5
6
-
0.8
4
-
MΩ
Input Noise Voltage (Note 5)
0.1Hz to 10Hz
25
-
0.08
0.18
-
0.09
0.25
µVP-P
Input Noise Voltage Density
(Note 6)
f = 10Hz
25
-
3.5
8.0
-
3.8
8.0
nV/√Hz
f = 100Hz
-
3.1
4.5
-
3.3
4.5
nV/√Hz
-
3.0
3.8
-
3.2
3.8
nV/√Hz
-
1.7
4.0
-
1.7
-
pA/√Hz
f = 1000Hz
Input Noise Current Density
(Note 6)
f = 10Hz
25
f = 100Hz
-
1.0
2.3
-
1.0
-
pA/√Hz
f = 1000Hz
-
0.4
0.6
-
0.4
0.6
pA/√Hz
1000
1800
-
700
1500
-
V/mV
TRANSFER CHARACTERISTICS
Large Signal Voltage Gain
VOUT = ±10V, RL = 2kΩ
25
Full
600
1200
-
300
800
-
V/mV
Common Mode Rejection Ratio
VCM = ±10V
Full
114
126
-
100
120
-
dB
Minimum Stable Gain
25
1
-
-
1
-
-
V/V
Unity-Gain-Bandwidth
25
5
8.5
-
5
8.5
-
MHz
RL = 600Ω
25
±10.0
±11.5
-
±10.0
±11.5
-
V
RL = 2kΩ
Full
±11.7
±13.8
-
±11.5
±13.5
-
V
25
111
160
-
111
160
-
kHz
25
-
70
-
-
70
-
Ω
25
16.5
25
-
16.5
25
-
mA
25
-
-
150
-
-
150
ns
OUTPUT CHARACTERISTICS
Output Voltage Swing
Full Power Bandwidth (Note 7)
Output Resistance
Open Loop
Output Current
TRANSIENT RESPONSE (Note 8)
Rise Time
2
FN2906.6
July 27, 2005
HA-5127, HA-5127A
VSUPPLY = ±15V, CL < 50pF, RS < 100Ω (Continued)
Electrical Specifications
HA-5127A
HA-5127
TEMP.
(oC)
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
25
7
10
-
7
10
-
V/µs
Settling Time (Note 9)
25
-
1.5
-
-
1.5
-
µs
Overshoot
25
-
20
40
-
20
40
%
25
-
3.5
-
-
3.5
-
mA
PARAMETER
TEST CONDITIONS
Slew Rate
VOUT = 10V
POWER SUPPLY CHARACTERISTICS
Supply Current
VS = ±4.5V to ±18V
Power Supply Rejection Ratio
Full
-
-
4.0
-
-
4.0
mA
Full
-
2
4
-
16
51
µV/V
NOTES:
4. This parameter value is based upon design calculations.
5. Refer to Typical Performance Curves.
6. The limits for this parameter are guaranteed based on lab characterization, and reflect lot-to-lot variation.
Slew Rate
7. Full power bandwidth guaranteed based on slew rate measurement using: FPBW = --------------------------- .
2πV PEAK
8. Refer to Test Circuits section of the data sheet.
9. Settling time is specified to 0.1% of final value for a 10V output step and AV = -1.
Test Circuits and Waveforms
IN
+
OUT
-
IN
50pF
1.8kΩ
+
OUT
2kΩ
50pF
200Ω
FIGURE 1. LARGE AND SMALL SIGNAL RESPONSE TEST CIRCUITS
IN
IN
OUT
OUT
Vertical Scale: Input = 0.5V/Div., Output = 5V/Div.
Horizontal Scale: 1µs/Div.
Vertical Scale: 100mV/Div.
Horizontal Scale: 200ns/Div.
LARGE SIGNAL RESPONSE
SMALL SIGNAL RESPONSE
+15V
2N4416
5kΩ
5kΩ
TO
OSCILLOSCOPE
2kΩ
10. AV = -1.
11. Feedback and summing resistors
should be 0.1% matched.
+15V
+
AUT
VIN
50pF
-
2kΩ
-15V
NOTES:
VOUT
12. Clipping diodes are optional.
HP5082-2810 recommended.
2kΩ
FIGURE 2. SETTLING TIME TEST CIRCUIT
3
FN2906.6
July 27, 2005
Schematic Diagram
V+
7
BALANCE
1
R25
QP32
R15
R1
8
R16
QP37
R20
R2
QP35
QN45
R21
QP43
R17
QP38
QP44
QP55
C5
4
D8
QN19
QN46
QP56
C4
QN47
QN13
R1A
R2A
V-
QN1A
QN1
QN2A
QN7
QN5
QN6
QN42
QN25
QN49
R6
R10
R8
QN10
4
SUBSTRATE
QN11
3
FN2906.6
July 27, 2005
+INPUT
QP30
2
-INPUT
C2
C3
QN50
QN48
QN39
R5
QP21
R19
QP40
QN42A
R13
QN18
D31
QN24
D60
D34
R18
D22
D59
6
OUT
QP26
D41
QN57
R12
R22
R23
R11
HA-5127, HA-5127A
QP36
QP27
QP36A
Z58
D33
QP26
QN4
R9
R4
QN20
QP16
R3
D54
D53
QN12
QN29
QP17
D9
C6
R24
QN15
QN52
QN3
QN2
QN14
R7
QN51
R14
C1
HA-5127, HA-5127A
Application Information
V+
RT
10K
1
2
3
4
8
+
7
6
5
NOTE: Tested Offset Adjustment Range is |VOS + 1mV| minimum referred to output. Typical range is ±4mV with RT = 10kΩ.
FIGURE 3. SUGGESTED OFFSET VOLTAGE ADJUSTMENT
CS
+
R2
R1
-
R1
-
R3
+
R2
R3
C3
Low resistances are preferred for low noise applications as a 1kΩ resistor has 4nV/√Hz of thermal noise. Total resistances of greater than 10kΩ on either
input can reduce stability. In most high resistance applications, a few picofarads of capacitance across the feedback resistor will improve stability.
FIGURE 4. SUGGESTED STABILITY CIRCUITS
Typical Performance Curves
Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V
30
12
6
10
5
8
4
6
3
10
0
-10
-20
-30
-40
NOISE VOLTAGE
4
2
1
2
-50
-60
-60
NOISE CURRENT (pA/√Hz)
NOISE VOLTAGE (nV/√Hz)
OFFSET VOLTAGE (µV)
20
NOISE CURRENT
-40
-20
0
20
40
60
80
100
120
TEMPERATURE (oC)
FIGURE 5. TYPICAL OFFSET VOLTAGE DRIFT vs TEMPERATURE
5
0
0
1
10
100
1K
10K
FREQUENCY (Hz)
100K
1M
FIGURE 6. NOISE CHARACTERISTICS
FN2906.6
July 27, 2005
HA-5127, HA-5127A
Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V
0.14
140
0.12
120
0.1
100
CMRR (dB)
INPUT NOISE VOLTAGE (µVP-P)
Typical Performance Curves
0.08
0.06
80
60
0.04
40
0.02
20
0
10
0
4
6
8
10
12
14
16
SUPPLY VOLTAGE (±V)
18
20
FIGURE 7. NOISE vs SUPPLY VOLTAGE
9
100
1K
10K
100K
FREQUENCY (Hz)
1M
10M
FIGURE 8. CMRR vs FREQUENCY
6.0
OFFSET VOLTAGE CHANGE (µV)
TA = 45oC
8
VIO DRIFT (µV)
(Continued)
7
6
5
4
5.0
4.0
3.0
2.0
1.0
5 TYPICAL UNITS
0.0
0.0
3
10
0
20
30
40
1.0
2.0
FIGURE 9. OFFSET VOLTAGE DRIFT vs TIME
4.0
5.0
FIGURE 10. OFFSET VOLTAGE WARM UP DRIFT
40
140
30
120
20
100
GAIN
GAIN (dB)
80
+PSRR
60
0
0
PHASE
-10
90
-20
40
-30
20
0
10
180
-40
100
1K
10K
100K
FREQUENCY (Hz)
FIGURE 11. PSRR vs FREQUENCY
6
1M
10M
100
1K
10K
100K
1M
FREQUENCY (Hz)
10M
PHASE (DEGREES)
10
-PSRR
PSRR (dB)
3.0
TIME AFTER POWER ON (MINUTES)
DAYS
100M
FIGURE 12. CLOSED LOOP GAIN AND PHASE vs FREQUENCY
FN2906.6
July 27, 2005
HA-5127, HA-5127A
Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V
17
1.05
16
RL = 2kΩ
1.04 CL = 50pF
15
SLEW RATE NORMALIZED TO 1 AT 30oC
AVOL (100kV/V) AND VOUT (V)
Typical Performance Curves
AVOL
14
13
12
VOUT
11
10
9
8
7
6
5
4
0
2
4
6
8
1.03
1.02
1.01
1.0
0.99
0.98
0.97
0.96
0.95
-60
10
(Continued)
-40
-20
0
20
40
60
FIGURE 13. AVOL AND VOUT vs LOAD RESISTANCE
OUTPUT VOLTAGE (VP-P)
SUPPLY CURRENT (mA)
2.78
2.76
2.74
2.72
CL = 50pF
24
20
16
12
8
2.70
4
2.68
-55
25
TEMPERATURE (oC)
125
FIGURE 15. SUPPLY CURRENT vs TEMPERATURE
0
NORMALIZED SLEW RATE AND BANDWIDTH
2.58
2.56
2.54
2.52
2.50
2.48
2.46
2.44
2.42
2.40
6
8
10
12
14
16
SUPPLY VOLTAGE (±V)
18
FIGURE 17. SUPPLY CURRENT vs SUPPLY VOLTAGE
7
0.4
0.8
1.2
FREQUENCY (MHz)
1.6
2.0
FIGURE 16. MAX UNDISTORTED SINEWAVE OUTPUT vs
FREQUENCY
2.60
SUPPLY CURRENT (mA)
120
RL = 2kΩ
VO = 0V
2.80
4
100
FIGURE 14. NORMALIZED SLEW RATE vs TEMPERATURE
28
2.82
80
TEMPERATURE (oC)
LOAD RESISTANCE (kΩ)
20
1.02
BANDWIDTH AT 0dB
AOL
VOUT = 10V STEP
RL = 2kΩ, CL = 50pF
1.01
1.00
0.99
0.98
BANDWIDTH
0.97
0.96
0.95
0.94
0.93
SLEW RATE
0.92
0.91
0.90
0
2
4
6
8
10
12
14
SUPPLY VOLTAGE (±V)
16
18
20
FIGURE 18. BANDWIDTH AND SLEW RATE vs SUPPLY
VOLTAGE
FN2906.6
July 27, 2005
HA-5127, HA-5127A
Typical Performance Curves
Unless Otherwise Specified: TA = 25oC, VSUPPLY = ±15V
140
20
RL = 2kΩ
GAIN (dB)
120
80
0
20
-45
0
-90
PHASE
-135
1K
10K
100K
5
GAIN
1M
-180
10M 100M
0
PHASE
-45
-90
-135
1K
FREQUENCY (Hz)
FIGURE 19. OPEN LOOP GAIN AND PHASE
10K
100K
1M
FREQUENCY (Hz)
10M
-180
100M
PHASE SHIFT (DEGREES)
40
100
10
AV = +1
RL = 2kΩ
CL = 50pF
0
GAIN
60
15
PHASE SHIFT (DEGREES)
GAIN (dB)
100
10
(Continued)
FIGURE 20. CLOSED LOOP GAIN AND PHASE
Horizontal Scale = 1s/Div.
Vertical Scale = 0.002µV/Div.
ACL = 25,000V/V, EN = 0.08µVP-P
FIGURE 21. PEAK-TO-PEAK NOISE VOLTAGE (0.1Hz TO 10Hz)
8
FN2906.6
July 27, 2005
HA-5127, HA-5127A
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
104 mils x 65 mils x 19 mils
2650µm x 1650µm x 483µm
METALLIZATION:
TRANSISTOR COUNT:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
63
SUBSTRATE POTENTIAL (Powered Up):
PROCESS:
V-
Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5127
BAL
V+
OUT
NC
BAL
-IN
+IN
V-
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
9
FN2906.6
July 27, 2005