HA-5221 TM Data Sheet April 2000 100MHz, Low Noise, Precision Operational Amplifier File Number 2915.5 Features • Gain Bandwidth Product. . . . . . . . . . . . . . . . . . . . 100MHz The HA-5221 is a single high performance dielectrically isolated, op amp, featuring precision DC characteristics while providing excellent AC characteristics. Designed for audio, video, and other demanding applications, noise (3.4nV/√Hz at 1kHz), total harmonic distortion (<0.005%), and DC errors are kept to a minimum. The precision performance is shown by low offset voltage (0.3mV), low bias currents (40nA), low offset currents (15nA), and high open loop gain (128dB). The combination of these excellent DC characteristics with the fast settling time (0.4µs) makes the HA-5221 ideally suited for precision signal conditioning. The unique design of the HA-5221 gives it outstanding AC characteristics not normally associated with precision op amps, high unity gain bandwidth (35MHz) and high slew rate (25V/µs). Other key specifications include high CMRR (95dB) and high PSRR (100dB). The combination of these specifications will allow the HA-5221 to be used in RF signal conditioning as well as video amplifiers. For MIL-STD-883C compliant product and Ceramic LCC packaging, consult the HA-5221/883C data sheet. (Intersil AnswerFAX (321-724-7800) Document #3716.) • Unity Gain Bandwidth. . . . . . . . . . . . . . . . . . . . . . . 35MHz • Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V/µs • Low Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 0.3mV • High Open Loop Gain. . . . . . . . . . . . . . . . . . . . . . . 128dB • Low Noise Voltage at 1kHz. . . . . . . . . . . . . . . . 3.4nV/√Hz • High Output Current . . . . . . . . . . . . . . . . . . . . . . . . . 56mA • Low Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA Applications • Precision Test Systems • Active Filtering • Small Signal Video • Accurate Signal Processing • RF Signal Conditioning Pinout HA-5221 (CERDIP, SOIC) TOP VIEW Ordering Information -BAL 1 PART NUMBER (BRAND) HA7-5221-5 HA9P5221-5 (H52215) TEMP. RANGE (oC) 0 to 75 PACKAGE 8 Ld CERDIP 0 to 75 8 Ld SOIC 1 PKG. NO. F8.3A M8.15 -IN 2 +IN 3 V- 8 +BAL 4 7 V+ + 6 OUT 5 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000 HA-5221 Absolute Maximum Ratings Thermal Information Supply Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . 35V Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 5V Output Current Short Circuit Duration . . . . . . . . . . . . . . . . Indefinite Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) CERDIP Package. . . . . . . . . . . . . . . . . 135 50 SOIC Package . . . . . . . . . . . . . . . . . . . 157 N/A Maximum Junction Temperature (Hermetic Package) . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range HA-5221-5 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 75oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Input is protected by back-to-back zener diodes. See applications section. 2. θJA is measured with the component mounted on an evaluation PC board in free air. VSUPPLY = ±15V, Unless Otherwise Specified Electrical Specifications TEMP. (oC) MIN TYP MAX UNITS 25 - 0.30 0.75 mV Full - 0.35 1.5 mV Average Offset Voltage Drift Full - 0.5 - µV/oC Input Bias Current 25 - 40 100 nA Full - 70 200 nA 25 - 15 100 nA Full - 30 150 nA 25 - 400 750 µV Full - - 1500 µV Common Mode Range 25 ±12 - - V Differential Input Resistance 25 - 70 - kΩ 25 - 0.25 - µVP-P 25 - 6.2 10 nV/√Hz f = 100Hz 25 - 3.6 6 nV/√Hz f = 1000Hz 25 - 3.4 4.0 nV/√Hz 25 - 4.7 8.0 pA/√Hz f = 100Hz 25 - 1.8 2.8 pA/√Hz f = 1000Hz 25 - 0.97 1.8 pA/√Hz Note 4 25 - <0.005 - % Note 5 25 106 128 - dB Full 100 120 - dB PARAMETER TEST CONDITIONS INPUT CHARACTERISTICS Input Offset Voltage Input Offset Current Input Offset Voltage Match Input Noise Voltage f = 0.1Hz to 10Hz Input Noise Voltage Density (Notes 3, 11) f = 10Hz Input Noise Current Density (Notes 3, 11) f = 10Hz THD+N TRANSFER CHARACTERISTICS Large Signal Voltage Gain CMRR VCM = ±10V Full 86 95 - dB Unity Gain Bandwidth -3dB 25 - 35 - MHz 2 HA-5221 VSUPPLY = ±15V, Unless Otherwise Specified (Continued) Electrical Specifications TEMP. (oC) MIN TYP MAX UNITS 25 - 100 - MHz Full 1 - - V/V RL = 333Ω Full ±10 - - V RL = 1kΩ 25 ±12 ±12.5 - V RL = 1kΩ Full ±11.5 ±12.1 - V VOUT = ±10V Full ±30 ±56 - mA 25 - 10 - Ω Note 6 25 239 398 - kHz Slew Rate Notes 7, 11 Full 15 25 - V/µs Rise Time Notes 8, 11 Full - 13 20 ns Overshoot Notes 8, 11 Full - 28 50 % Settling Time (Notes 9, 10) 0.1% 25 - 0.4 - µs 0.01% 25 - 1.5 - µs VS = ±10V to ±20V Full 86 100 - dB Full - 8 11 mA PARAMETER TEST CONDITIONS Gain Bandwidth Product 1kHz to 400kHz Minimum Stable Gain OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Output Resistance Full Power Bandwidth TRANSIENT RESPONSE (Note 11) POWER SUPPLY PSRR Supply Current NOTES: 3. Refer to typical performance curve in data sheet. 4. AVCL = 10, fO = 1kHz, VO = 5VRMS, RL = 600Ω, 10Hz to 100kHz, minimum resolution of test equipment is 0.005%. 5. VOUT = 0 to ±10V, RL = 1kΩ, CL = 50pF. Slew Rate 6. Full Power Bandwidth is calculated by: FPBW = ---------------------------, V PEAK = 10V . 2πV PEAK 7. VOUT = ±2.5V, RL = 1kΩ, CL = 50pF. 8. VOUT = ±100mV, RL = 1kΩ, CL = 50pF. 9. Settling time is specified for a 10V step and AV = -1. 10. See Test Circuits. 11. Guaranteed by characterization. Test Circuits and Waveforms VIN + VOUT - 1kΩ 50pF FIGURE 1. TRANSIENT RESPONSE TEST CIRCUIT 3 HA-5221 Test Circuits and Waveforms (Continued) 100mV 2.5V VIN 0V 0V -100mV -2.5V 2.5V 100mV VOUT 0V 0V -100mV -2.5V VOUT = ±100mV Vertical Scale = 100mV/Div., Horizontal Scale = 200ns/Div. VOUT = 2.5V Vertical Scale = 2V/Div., Horizontal Scale = 200ns/Div. FIGURE 2. LARGE SIGNAL RESPONSE FIGURE 3. SMALL SIGNAL RESPONSE VSETTLE 5K 5K 2K 2K VIN + VOUT NOTES: 12. AV = -1. 13. Feedback and summing resistors must be matched (0.1%). 14. HP5082-2810 clipping diodes recommended. 15. Tektronix P6201 FET probe used at settling point. FIGURE 4. SETTLING TIME TEST CIRCUIT Application Information Operation at Various Supply Voltages The HA-5221 operates over a wide range of supply voltages with little variation in performance. The supplies may be varied from ±5V to ±15V. See typical performance curves for variations in supply current, slew rate and output voltage swing. +15V 7 3 Offset Adjustment RP 1 8 2 6 + 4 The following diagram shows the offset voltage adjustment configuration for the HA-5221. By moving the potentiometer wiper towards pin 8 (+BAL), the op amps output voltage will increase; towards pin 1 (-BAL) decreases the output voltage. A 20kΩ trim pot will allow an offset voltage adjustment of about 10mV. 4 -15V Capacitive Loading Considerations When driving capacitive loads >80pF, a small resistor, 50Ω to 100Ω, should be connected in series with the output and inside the feedback loop. HA-5221 Saturation Recovery When an op amp is over driven, output devices can saturate and sometimes take a long time to recover. By clamping the input, output saturation can be avoided. If output saturation can not be avoided, the maximum recovery time when overdriven into the positive rail is 10.6µs. When driven into the negative rail the maximum recovery time is 3.8µs. Input Protection The HA-5221 has built in back-to-back protection diodes which limit the maximum allowable differential input voltage to approximately 5V. If the HA-5221 is used in circuits where the maximum differential voltage may be exceeded, then current limiting resistors must be used. The input current should be limited to a maximum of 10mA. Typical Performance Curves RLIMIT 2 12 9 AV = +1, RL = 1K, CL = 50pF 20 180 135 PHASE 90 45 0 10M 1M 3 GAIN 0 -3 -6 180 PHASE 90 45 10K 100M 100K FREQUENCY (Hz) 3 GAIN 180 PHASE 135 90 45 0 10K 100K 1M 10M 100M FREQUENCY (Hz) FIGURE 7. CLOSED LOOP GAIN vs FREQUENCY 5 0 100M FIGURE 6. CLOSED LOOP GAIN vs FREQUENCY CLOSED LOOP GAIN (dB) AV = -1, RL = 1K, CL = 50pF PHASE MARGIN (DEGREES) GAIN (dB) 9 0 10M 1M FREQUENCY (Hz) FIGURE 5. OPEN LOOP GAIN AND PHASE vs FREQUENCY 6 135 80 60 40 20 AV = -1000 RL = 1K, CL = 50pF AV = -100 AV = -10 0 AV = -10 AV = -100 180 135 90 AV = -1000 45 0 10K 100K 1M 10M PHASE MARGIN (DEGREES) 100K 6 PHASE MARGIN (DEGREES) 40 GAIN (dB) 60 PHASE MARGIN (DEGREES) GAIN (dB) GAIN 10K 3 VS = ±15V, TA = 25oC 100 1K VOUT + When designing with the HA-5221, good high frequency (RF) techniques should be used when building a PC board. Use of ground plane is recommended. Power supply decoupling is very important. A 0.01µF to 0.1µF high quality ceramic capacitor at each power supply pin with a 2.2µF to 10µF tantalum close by will provide excellent decoupling. Chip capacitors produce the best results due to ease of placement next to the op amp and basically no lead inductance. If leaded capacitors are used, the leads should be kept as short as possible to minimize lead inductance. 120 0 RLIMIT PC Board Layout Guidelines RL = 1K, CL = 50pF 80 6 ∆VIN 100M FREQUENCY (Hz) FIGURE 8. VARIOUS CLOSED LOOP GAINS vs FREQUENCY HA-5221 Typical Performance Curves AV = +1, RL = 1K AV = +1, RL = 1K 100 100 80 80 PSRR (dB) CMRR (dB) 120 VS = ±15V, TA = 25oC (Continued) 60 40 20 0 -PSRR 60 40 20 +PSRR 0 10K 100K 1M 10M 100M 10K 100K FREQUENCY (Hz) FIGURE 9. CMRR vs FREQUENCY 100M 300 RL = 1K 250 16 OFFSET VOLTAGE (µV) OPEN LOOP GAIN (V/µV) 10M FIGURE 10. PSRR vs FREQUENCY 20 18 1M FREQUENCY (Hz) 14 12 10 8 6 200 150 100 50 0 4 -50 2 0 -60 -40 -20 0 20 40 60 80 100 -100 -60 120 -40 -20 TEMPERATURE (oC) 0 20 40 60 80 100 120 TEMPERATURE (oC) FIGURE 11. OPEN LOOP GAIN vs TEMPERATURE FIGURE 12. OFFSET VOLTAGE vs TEMPERATURE (4 REPRESENTATIVE UNITS) PEAK OUTPUT VOLTAGE (V) 14 BIAS CURRENT (nA) 160 140 120 100 80 60 40 20 0 -20 -40 -60 RL = 600Ω 13.5 13 12.5 12 11.5 11 10.5 10 -40 -20 0 20 40 60 80 TEMPERATURE (oC) FIGURE 13. BIAS CURRENT vs TEMPERATURE (4 REPRESENTATIVE UNITS) 6 100 120 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (oC) FIGURE 14. OUTPUT VOLTAGE SWING vs TEMPERATURE HA-5221 VS = ±15V, TA = 25oC (Continued) 70 1.1 AV = +1, RL = 1K, CL = 50pF OFFSET VOLTAGE CHANGE (µV) SLEW RATE (NORMALIZED TO 1 AT 25oC) Typical Performance Curves 1.05 1.0 0.95 0.9 0.85 0.8 -60 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 0 120 1 TEMPERATURE (oC) FIGURE 15. SLEW RATE vs TEMPERATURE 3 4 5 FIGURE 16. OFFSET VOLTAGE WARM-UP DRIFT (CERDIP PACKAGES) 8.5 36 34 32 8.25 SLEW RATE (V/µs) SUPPLY CURRENT (mA) 2 TIME AFTER POWER UP (MINUTES) 8 7.75 AV = +1, RL = 2K, CL = 50pF +SLEW RATE 30 28 26 24 22 -SLEW RATE 20 18 16 14 12 10 7.5 5 7 9 11 13 15 5 17 7 9 SUPPLY VOLTAGE (±V) 11 13 15 17 SUPPLY VOLTAGE (±V) FIGURE 17. SUPPLY CURRENT vs SUPPLY VOLTAGE FIGURE 18. SLEW RATE vs SUPPLY VOLTAGE 15 10 5 16 24 14 21 12 18 10 15 8 12 6 9 4 VOLTAGE NOISE 2 CURRENT NOISE 3 0 0 5 7 9 11 13 SUPPLY VOLTAGE (±V) 15 17 FIGURE 19. OUTPUT VOLTAGE SWING vs SUPPLY VOLTAGE 7 1 10 100 1K FREQUENCY (Hz) FIGURE 20. NOISE CHARACTERISTICS 6 0 10K CURRENT NOISE (pA/√Hz) RL = 600Ω VOLTAGE NOISE (nV/√Hz) PEAK OUTPUT VOLTAGE SWING (V) 20 HA-5221 100 90 80 70 60 50 40 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -60 VS = ±15V, TA = 25oC (Continued) CMRR AND PSRR (dB) OFFSET CURRENT (nA) Typical Performance Curves -40 -20 0 20 40 60 TEMPERATURE (oC) 80 100 120 45 CMRR -40 -20 0 20 40 60 80 100 120 130 40 100 35 80 BANDWIDTH 30 60 25 40 20 20 15 0 10 100 1000 LOAD CAPACITANCE (pF) FIGURE 23. BANDWIDTH AND PHASE MARGIN vs LOAD CAPACITANCE Vertical Scale = 1mV/Div.; Horizontal Scale = 1s/Div. AV = +25,000; EN = 0.168µVP-P RTI FIGURE 25. 0.1Hz TO 10Hz NOISE 8 OUTPUT CURRENT (mA) AV = +1, RL = 1K PHASE MARGIN (DEGREE) BANDWIDTH (MHz) -PSRR FIGURE 22. CMRR AND PSRR vs TEMPERATURE 120 1 +PSRR TEMPERATURE (oC) FIGURE 21. OFFSET CURRENT vs TEMPERATURE (4 REPRESENTATIVE UNITS) PHASE MARGIN 115 114 113 112 111 110 109 108 107 106 105 104 103 102 101 100 99 98 97 96 95 -60 110 90 70 50 0 1 2 3 4 TIME AFTER SHORT CIRCUIT (MINUTES) FIGURE 24. SHORT CIRCUIT OUTPUT CURRENT vs TIME Vertical Scale = 10mV/Div.; Horizontal Scale = 1s/Div. AV = +25,000; EN = 1.5µVP-P RTI FIGURE 26. 0.1Hz TO 1MHz 5 HA-5221 Typical Performance Curves 18 18 AV = +1, RL = 1K, CL = 15pF, THD ≤ 0.01% VS = ±18 14 12 VS = ±15 10 8 6 VS = ±10 4 2 14 VS = ±18 VS = ±15 12 10 VS = ±10 8 6 4 VS = ±5 0 10K AV = +1, THD ≤ 0.01%, f = 1kHz 16 PEAK OUTPUT VOLTAGE (V) PEAK OUTPUT VOLTAGE (V) 16 VS = ±15V, TA = 25oC (Continued) VS = ±5 2 100K 1M 0 10 10M 100 FIGURE 27. OUTPUT VOLTAGE SWING vs FREQUENCY 9.5 SUPPLY CURRENT (mA) 10K FIGURE 28. OUTPUT VOLTAGE SWING vs LOAD RESISTANCE 10 9 8.5 8 7.5 7 6.5 6 -60 -40 -20 0 20 40 60 80 100 TEMPERATURE (oC) FIGURE 29. SUPPLY CURRENT vs TEMPERATURE 9 1K LOAD RESISTANCE (Ω) FREQUENCY (Hz) 120 HA-5221 Die Characteristics DIE DIMENSIONS: SUBSTRATE POTENTIAL (POWERED UP): 72 mils x 94 mils 1840µm x 2400µm VTRANSISTOR COUNT: METALLIZATION: 62 Type: Al, 1% Cu Thickness: 16kÅ ±2kÅ PROCESS: Bipolar Dielectric Isolation PASSIVATION: Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.) Silox Thickness: 12kÅ ±2kÅ Nitride Thickness: 3.5kÅ ±1.5kÅ Metallization Mask Layout HA-5221 V- +IN -IN -BAL +BAL OUT 10 V+ HA-5221 Ceramic Dual-In-Line Frit Seal Packages (CERDIP) c1 F8.3A MIL-STD-1835 GDIP1-T8 (D-4, CONFIGURATION A) LEAD FINISH 8 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.200 - 5.08 - 0.026 0.36 0.66 2 b1 0.014 0.023 0.36 0.58 3 b2 0.045 0.065 1.14 1.65 - b3 0.023 0.045 0.58 1.14 4 c 0.008 0.018 0.20 0.46 2 c1 0.008 0.015 0.20 0.38 3 D - 0.405 - 10.29 5 E 0.220 0.310 5.59 7.87 5 eA ccc M C A - B S e eA/2 c aaa M C A - B S D S D S NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH 11 NOTES - b2 b MAX 0.014 α A A MIN b A L MILLIMETERS MAX A Q SEATING PLANE MIN M (b) D BASE PLANE SYMBOL b1 SECTION A-A D S INCHES (c) e 0.100 BSC 2.54 BSC - eA 0.300 BSC 7.62 BSC - eA/2 0.150 BSC 3.81 BSC - L 0.125 0.200 3.18 5.08 - Q 0.015 0.060 0.38 1.52 6 S1 0.005 - 0.13 - 7 α 90o 105o 90o 105o - aaa - 0.015 - 0.38 - bbb - 0.030 - 0.76 - ccc - 0.010 - 0.25 - M - 0.0015 - 0.038 2, 3 N 8 8 8 Rev. 0 4/94 HA-5221 Small Outline Plastic Packages (SOIC) M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE N INDEX AREA H 0.25(0.010) M B M E INCHES -B- 1 2 SYMBOL 3 L SEATING PLANE -A- h x 45o A D -C- e α A1 B 0.25(0.010) M C A M MAX MIN MAX NOTES A 0.0532 0.0688 1.35 1.75 - A1 0.0040 0.0098 0.10 0.25 - B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 - D 0.1890 0.1968 4.80 5.00 3 E 0.1497 0.1574 3.80 4.00 4 e C 0.10(0.004) B S NOTES: 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. MILLIMETERS MIN 0.050 BSC 1.27 BSC 0.2284 0.2440 h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6 8o 0o N α 5.80 - H 8 0o 6.20 - 8 7 8o Rev. 0 12/93 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. 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