930

1C5802
1C5804
1C5806
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 930, REV. E
ULTRA FAST RECOVERY
SILICON RECTIFIER DIE
Maximum Ratings:
Characteristics
Peak Inverse Voltage
DC Blocking Voltage
1C5802
1C5804
1C5806
Breakdown Voltage
1C5802
1C5804
1C5806
Max. Average Forward Current
Max. Peak One Cycle NonRepetitive Surge Current
Die Size
Max. Junction Temperature
Max. Storage Temperature
(1)
Symbol
VRWM
VR
Condition
Min.
50
100
150
-
VBR
@ IBR=100uA
IF(AV)
IFSM
@ 55C
TJ
Tstg
Max.
8.3 ms, sine pulse
60
110
160
V
V
1.0
35
A
A
40
+175
+175
mil
C
C
(1)
-
Units
-55
-55
Tested in SHD package
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Reverse Recovery Time
Max. Junction Capacitance
Symbol
VF1
VF2
VF3
IR1
IR2
trr
CT
Condition
1A, pulse, TJ = 25 C
2.5A, pulse, TJ = 25 C
1A, pulse, TJ = 125 C
VR = VRWM, pulse, TJ = 25 C
VR = VRWM, pulse, TJ = 125 C
IF = IR = 0.5A , IRM = 0.05A
VR = 10V, TC = 25 C
fSIG = 1MHz,
VSIG = 50mV (p-p)
Max.
0.875
0.975
0.800
1.0
175
25
25
©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected] 
Units
V
V
V
A
A
ns
pF
1C5802
1C5804
1C5806
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 930, REV. E
Mechanical Dimensions: In Inches (mm)
Bottom side metalization: Ti/Ni/Ag - 30 kÅ minimum.
Top side metalization: Al - 25 kÅ minimum
ANODE
0.024  0.003
(0.610  0.076)
0.040  0.003
(1.016  0.076)
Bottom side is cathode, top side is anode.
Anode
0.009 ± 0.001 (0.229 ± 0.025)
Cathode
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datasheet(s).
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fail-safe precautions or other arrangement .
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a value exceeding the absolute maximum rating.
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©2014 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729-4681 
 Phone (631) 586-7600  Fax (631) 242-9798  www.sensitron.com  [email protected] 