4232

SENSITRON
SEMICONDUCTOR
1C4936
TECHNICAL DATA
DATASHEET 4232, Rev-
FAST RECOVERY
SILICON RECTIFIER DIE
Maximum Ratings:
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Die Size
Max. Junction Temperature
Max. Storage Temperature
Symbol
VRWM
IF(AV)
TJ
Tstg
Condition
@ 55°C
-
Symbol
VF1
Condition
@ 1.0A, Pulse, TJ = 25 °C
Duty cycle ≤ 2%, pulse width ≤
300µs
@V R = 400V, Pulse, TJ = 25 °C
@V R = 400V, Pulse, TJ = 100 °C
If = 500mA, Ir = 1A, Irm = 250mA
Max.
400
1.0
40
-55 to +175
-55 to +175
Units
V
A
mil
°C
°C
Electrical Characteristics:
Characteristics
Max. Forward Voltage Drop
Max. Reverse Current
Reverse Recovery Time
IR1
IR2
trr
Max.
1.2
Units
V
1
100
200
µA
µA
ns
Mechanical Dimensions: In Inches / mm
Bottom side metalization: Ti/NiAg - 30 kÅ minimum.
Top side metalization: Al - 25 kÅ minimum
ANODE
0.024 ± 0.003
(0.610 ± 0.076)
0.040 ± 0.003
(1.016 ± 0.076)
Bottom side is cathode, top side is anode.
Anode
0.009 ± 0.001 (0.229 ± 0.025)
Cathode
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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of the datasheet(s).
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means of users’ fail-safe precautions or other arrangement.
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• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - [email protected]