ISL7119RH Neutron Test Report

Neutron testing of the ISL7119RH hardened dual comparator
Nick van Vonno
Intersil Corporation
3 July 2013
Revision 0
Table of Contents
1. Introduction
2. Part Description
3. Test Description
3.1 Irradiation facility
3.2 Characterization equipment
3.3 Experimental Matrix
4 Results
4.1 Test results
4.2 Variables data
5 Discussion and conclusion
6 Appendices
7 Document revision history
1. Introduction
This report summarizes results of 1 MeV equivalent neutron testing of the ISL7119RH dual
comparator. The test was conducted in order to determine the sensitivity of the part to the displacement
damage caused by the neutron environment. Neutron fluences ranged from 5 x 1011 n/cm2 to 1 x 1014
n/cm2 in an approximately logarithmic sequence. This project was carried out in collaboration with
Honeywell Aerospace (Clearwater, FL), and their support is gratefully acknowledged.
2: Part Description
The ISL7119RH and ISL7119EH are radiation hardened, high speed, dual voltage comparators
fabricated on a single monolithic chip. They are designed to operate over a wide dual supply voltage
range as well as a single 5V logic supply and ground. The open collector output stage facilitates
interfacing with a variety of logic devices and has the ability to drive relays and lamps at output currents
up to 25mA. The ISL7119RH and ISL7119EH are fabricated on our dielectrically isolated Rad-hard
Silicon Gate (RSG) process, which provides highly reliable performance in the natural space
environment. Specifications for radiation hardened QML devices are controlled by the Defense Logistics
Agency Land and Maritime (DLA). Detailed electrical specifications for the ISL7119RH and ISL7119EH
are contained in SMD 5962-07215.
The ISL7119RH is implemented in the Intersil RSG process, which is a complementary
bipolar/CMOS flow using dielectrically isolated (DI) substrates. The process is used for a range of
hardened operational amplifiers and other analog and power management parts. The DI technology
1
enables vertical NPN and PNP devices, unlike the vertical NPN/lateral PNP combination used in
commercial junction isolated processes. The vertical PNP device improves AC performance and total
dose hardness, while the DI substrate eliminates latchup by either electrical or SEE conditions. The
process is in volume production under MIL-PRF-38535 certification in the Palm Bay, Florida Intersil wafer
fabrication facility.
3: Test Description
3.1 Irradiation Facilities
Neutron irradiation was performed by the Honeywell team at the Fast Burst Reactor facility at White
Sands Missile Range (White Sands, NM), which provides a controlled 1MeV equivalent neutron flux.
Parts were tested in an unbiased configuration with all leads open. As neutron irradiation activates many
of the elements found in a packaged integrated circuit, the parts exposed at the higher neutron levels
required (as expected) significant ‘cooldown time’ before being shipped back to Palm Bay for electrical
testing.
3.2 Characterization equipment and procedures
Electrical testing was performed before and after irradiation using the Intersil production automated
test equipment (ATE). All electrical testing was performed at room temperature.
3.3 Experimental matrix
Testing proceeded in general accordance with the guidelines of MIL-STD-883 Test Method 1017.
The experimental matrix consisted of five samples irradiated at 5 x 1011 n/cm2, five samples irradiated at
2 x 1012 n/cm2, five samples irradiated at 1 x 1013 n/cm2 and five samples irradiated at 1 x 1014 n/cm2.
Three control units were used.
4: Results
4.1 Test results
Neutron testing of the ISL7119RH is complete and the results are reported in the balance of this
report. It should be realized when reviewing the data that each neutron irradiation was made on a
different 5-unit sample; this is not total dose testing, where the damage is cumulative.
4.2 Variables data
The plots in Figs. 1 through 20 show data plots for key parameters before and after irradiation to
each level. The plots show the average, minimum and maximum of each parameter for each of the two
channels as a function of neutron irradiation.
2
Positive power supply current, mA
14.0
12.0
10.0
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
8.0
6.0
4.0
2.0
0.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 1: ISL7119RH positive power supply current as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 12.0mA; the 2.0mA value is an ATE
limit.
Negative power supply current, mA
0.0
-1.0
-2.0
-3.0
-4.0
-5.0
-6.0
Pre-rad
1.00E+11
1.00E+12
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 2: ISL7119RH negative power supply current as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is -5.0.0mA; the -0.6mA value is an
ATE limit.
3
1.0
Output saturation voltage, V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.00E+11
Pre-rad
1.00E+12
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 3: ISL7119RH output saturation voltage as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 0.65V maximum.
25.0
Output leakage current, µA
20.0
15.0
10.0
5.0
0.0
-5.0
Ch 1 Median
Ch 1 Min
-10.0
Ch 1 Max
Ch 2 Median
-15.0
Ch 2 Min
Ch 2 Max
-20.0
Spec low
Spec high
-25.0
1.00E+11
Pre-rad
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 4: ISL7119RH output leakage current as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -20.0µA to 20.0µA.
4
Input offset voltage, Vcm=3V, mV
10.0
8.0
6.0
4.0
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 5: ISL7119RH input offset voltage as a function of neutron irradiation, common mode voltage 3.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -8.0mV to 8.0mV.
Input offset voltage, Vcm=12V, mV
10.0
8.0
6.0
4.0
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 6: ISL7119RH input offset voltage as a function of neutron irradiation, common mode voltage 12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -8.0mV to 8.0mV.
5
Input offset voltage, Vcm=-12V, mV
10.0
8.0
6.0
4.0
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
1.00E+13
1.00E+14
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
Pre-rad
1.00E+11
1.00E+12
Neutron fluence,
n/cm2
Fig. 7: ISL7119RH input offset voltage as a function of neutron irradiation, common mode voltage -12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -8.0mV to 8.0mV.
Common mode rejection ratio, dB
250
200
150
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
1.00E+13
1.00E+14
100
50
0
Pre-rad
1.00E+11
1.00E+12
Neutron fluence,
n/cm2
Fig. 8: ISL7119RH common mode rejection ratio as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with two control units. The post-irradiation SMD limits are 80dB to 200dB.
6
Positive bias current, Vcm=3V, nA
4000
3500
3000
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec high
2500
2000
1500
1000
500
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 9: ISL7119RH positive bias current as a function of neutron irradiation, common mode voltage 3.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA maximum.
Negative bias current, Vcm=3V, nA
4000
3500
3000
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec high
2500
2000
1500
1000
500
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 10: ISL7119RH negative bias current as a function of neutron irradiation, common mode voltage 3.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA maximum.
7
Input offset current, Vcm=3V, nA
1000
800
600
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
400
200
0
-200
1.00E+11
Pre-rad
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 11: ISL7119RH input offset current as a function of neutron irradiation, common mode voltage 3.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -150nA to 150nA.
Positive bias current, Vcm=12V, nA
4500
4000
3500
3000
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec high
2500
2000
1500
1000
500
0
1.00E+11
Pre-rad
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 12: ISL7119RH positive bias current as a function of neutron irradiation, common mode voltage 12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA maximum.
8
Negative bias current, Vcm=12V, nA
5000
4500
4000
3500
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec high
3000
2500
2000
1500
1000
500
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 13: ISL7119RH negative bias current as a function of neutron irradiation, common mode voltage 12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA maximum.
Input offset current, Vcm=12V, nA
1600
1400
1200
1000
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
800
600
400
200
0
-200
-400
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 14: ISL7119RH input offset current as a function of neutron irradiation, common mode voltage 12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -150nA to 150nA.
9
Positive bias current, Vcm=-12V, nA
4500
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
3500
Ch 2 Min
Ch 2 Max
3000
Spec high
4000
2500
2000
1500
1000
500
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 15: ISL7119RH positive bias current as a function of neutron irradiation, common mode voltage -12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA maximum.
Negative bias current, Vcm=-12V, nA
4500
4000
3500
3000
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec high
2500
2000
1500
1000
500
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 16: ISL7119RH negative bias current as a function of neutron irradiation, common mode voltage -12.0V, showing
11
2
the mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x
12
2
13
2
14
2
10 n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 1000nA
maximum.
10
Input offset current, Vcm=-12V, nA
800
700
600
500
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
400
300
200
100
0
-100
-200
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 17: ISL7119RH input offset current as a function of neutron irradiation, common mode voltage -12.0V, showing the
11
2
12
mean, minimum and maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10
2
13
2
14
2
n/cm , 1 x 10 n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limits are -150nA to 150nA.
250
Open loop gain, dB
200
150
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
100
50
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 18: ISL7119RH open-loop gain as a function of neutron irradiation, showing the mean, minimum and maximum of
11
2
12
2
13
2
14
the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10 n/cm and 1 x 10
2
n/cm ), with three control units. The post-irradiation SMD limit is 74dB minimum; the 200dB value is an ATE limit.
11
Propagation delay, low to high, ns
180
160
140
120
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
100
80
60
40
20
0
Pre-rad
1.00E+11
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 19: ISL7119RH low to high propagation delay as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 160ns maximum; the 10ns value is
an ATE limit.
Propagation delay, high to low, ns
180
160
140
120
Ch 1 Median
Ch 1 Min
Ch 1 Max
Ch 2 Median
Ch 2 Min
Ch 2 Max
Spec low
Spec high
100
80
60
40
20
0
1.00E+11
Pre-rad
1.00E+12
1.00E+13
Neutron fluence,
1.00E+14
n/cm2
Fig. 20: ISL7119RH high to low propagation delay as a function of neutron irradiation, showing the mean, minimum and
11
2
12
2
13
maximum of the populations at each level. Sample size was 5 for each cell (5 x 10 n/cm , 2 x 10 n/cm , 1 x 10
2
14
2
n/cm and 1 x 10 n/cm ), with three control units. The post-irradiation SMD limit is 160ns maximum; the 10ns value is
an ATE limit.
12
5: Discussion and conclusion
This document reports the results of neutron testing of the ISL7119RH dual comparator. Samples
were irradiated to levels of 5 x 1011 n/cm2, 2 x 1012 n/cm2, 1 x 1013 n/cm2 and 1 x 1014 n/cm2 with a sample
size of five parts per cell. It should again be realized when reviewing the data that each neutron
irradiation was made on a different 5-unit sample; this is not total dose testing, where the damage is
cumulative. ATE characterization testing was performed before and after the irradiations, and three
control units were used to insure repeatable data. Variables data for monitored parameters is presented
in Figs. 1 through 20. The 2 x 1012 n/cm2 level is of some interest in the context of recent developments in
the JEDEC community, where the discrete component vendor community have signed up for
characterization testing (but not for acceptance testing) at this level.
The ISL7119RH is not formally designed for neutron hardness. The part is built in a DI
complementary bipolar process. These bipolar transistors are minority carrier devices, obviously, and
may be expected to be sensitive to displacement damage (DD) at the higher levels. This expectation
turned out to be correct. We will discuss the results on a parameter by parameter basis and then draw
some conclusions.
The positive power supply current (Figs. 1 and 2) showed good stability after 5 x 1011 n/cm2 and 2 x
10 n/cm2, increased after 1 x 1013 n/cm2 irradiation and was out of specification after 1 x 1014 n/cm2
irradiation. This behavior was observed in Channel 2 only; Channel 1 showed good stability to 1 x 1014
n/cm2. The reason for this channel sensitivity effect is unknown. The negative power supply current for
both channels showed excellent stability to the highest level.
12
The output saturation voltage (Fig. 3) showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1
x 1013 n/cm2 irradiation but increased significantly after 1 x 1014 n/cm2 irradiation. The range was also
increased at this highest level.
The output leakage (Fig. 4) showed good stability at all levels, with a modest increase in range.
The input offset voltage (Figs. 5, 6 and 7) for common mode voltages of 3.0V, 12.0V and -12.0V,
respectively, showed good stability at all levels.
The common mode rejection ratio (Fig. 8) showed good stability at all levels.
The positive and negative input bias current (Figs. 9 and 10) for an input common-mode voltage of
3.0V showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but
increased significantly after 1 x 1014 n/cm2 irradiation, exceeding the post-irradiation specification limits.
The range was also increased at this highest level. These results are consistent with gain degradation of
the input differential pair of the comparator.
The input offset current (Fig. 11) for an input common-mode voltage of 3.0V also showed good
stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1 x 1013 n/cm2 irradiation but increased significantly after
1 x 1014 n/cm2 irradiation. The range was also increased at this highest level. These results are also
consistent with gain degradation of the input differential pair of the comparator, but show good gain
matching of both transistors over irradiation.
The positive and negative input bias current (Figs. 12 and 13) and the input offset current (Fig. 14) for
an input common-mode voltage of 12.0V showed good stability after 5 x 1011 n/cm2, 2 x 1012 n/cm2 and 1
x 1013 n/cm2 irradiation but increased significantly after 1 x 1014 n/cm2 irradiation, exceeding the post-
13
irradiation specification limits. The positive and negative input bias current and input offset current at a
common-mode input voltage of -12.0V (Figs. 15, 16 and 17) showed similar behavior.
The open-loop gain (Fig. 18) showed good stability at all levels.
The low to high and high to low response times (Figs. 19 and 20) showed good stability at all levels.
We conclude that the ISL7119RH is capable of post 1 x 1013 n/cm2 operation within the SMD posttotal dose parameters. The part is not capable of post 1 x 1014 n/cm2 operation as parameters such as
input bias current and input offset current were well outside the SMD limits; the part did, however, remain
functional.
6: Appendices
6.1: Reported parameters.
Fig.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Parameter
Limit, low
Positive power supply current
Negative power supply current
Output saturation voltage
Output leakage current
Input offset voltage
Input offset voltage
Input offset voltage
Common mode rejection ratio
Positive bias current
Negative bias current
Input offset current
Positive bias current
Negative bias current
Input offset current
Positive bias current
Negative bias current
Input offset current
Open-loop gain
LOW to HIGH propagation delay
HIGH to LOW propagation delay
-20.0
-8.0
-8.0
-8.0
+80
-150.0
-150.0
-150.0
+74
-
7: Document revision history
Revision
0
Date
3 July 2013
Pages
All
Comments
Original issue
14
Limit,
high
Units
+12.0
-5.0
+0.65
+20.0
+8.0
+8.0
+8.0
+200
+1000
+1000
+150.0
+1000
+1000
+150.0
+1000
+1000
+150.0
160
160
mA
mA
V
µA
mV
mV
mV
dB
nA
nA
nA
nA
nA
nA
nA
nA
nA
dB
ns
ns
Notes
Vcm=3.0V
Vcm=12.0V
Vcm=-12.0V
Vcm=3.0V
Vcm=3.0V
Vcm=3.0V
Vcm=12.0V
Vcm=12.0V
Vcm=12.0V
Vcm=-12.0V
Vcm=-12.0V
Vcm=-12.0V