Sample & Buy Product Folder Support & Community Tools & Software Technical Documents INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 INA250 36-V, Low- or High-Side, Bidirectional, Zero-Drift Current-Shunt Monitor with Precision Integrated Shunt Resistor 1 Features 3 Description • The INA250 is a voltage-output, current-sensing amplifier family that integrates an internal shunt resistor to enable high-accuracy current measurements at common-mode voltages that can vary from 0 V to 36 V, independent of the supply voltage. The device is a bidirectional, low- or highside current-shunt monitor that allows an external reference to be used to measure current flowing in both directions through the internal current-sensing resistor sensor. The integration of the precision current-sensing resistor provides calibration equivalent measurement accuracy with ultra-low temperature drift performance and ensures an optimized Kelvin layout for the sensing resistor is always obtained. 1 • • • • Precision Integrated Shunt Resistor: – Shunt Resistor: 2 mΩ – Shunt Resistor Tolerance: 0.1% (Max) – 15 A Continuous from –40°C to 85°C – 0°C to 125°C Temperature Coefficient: 10 ppm/°C High Accuracy: – Gain Error (Shunt and Amplifier): 0.3% (Max) – Offset Current: 50 mA (Max, INA250A2) Four Available Gains: – INA250A1: 200 mV/A – INA250A2: 500 mV/A – INA250A3: 800 mV/A – INA250A4: 2 V/A Wide Common-Mode Range: –0.1 V to 36 V Specified Operating Temperature: –40°C to 125°C The INA250 family is available in four output voltage scales: 200 mV/A, 500 mV/A, 800 mV/A, and 2 V/A. This device is fully tested and specified for continuous currents up to 10 amps at the maximum temperature of 125°C. The INA250 operates from a single 2.7-V to 36-V supply and draws a maximum of 300 µA of supply current. All INA250 gain versions are specified over the extended operating temperature range (–40°C to 125°C), and are available in a TSSOP-16 package. 2 Applications • • • • • • • Test Equipment Power Supplies Servers Telecom Equipment Automotive Solar Inverters Power Management Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) INA250A1(2) INA250A2 INA250A3 TSSOP (16) 5.00 mm × 4.40 mm INA250A4 (1) For all available packages, see the orderable addendum at the end of the datasheet. (2) Shaded cells indicate a product-preview device. Simplified Schematic Device Supply (2.7 V to 36 V) Power Rail (0 V to 36 V) IN+ SH+ CBYPASS 0.1 PF VIN+ VS REF Microcontroller OUT + ADC ADC IN SH VIN GND Load 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA. INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Table of Contents 1 2 3 4 5 6 7 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 1 1 1 2 3 4 6.1 6.2 6.3 6.4 6.5 6.6 4 4 4 4 5 7 Absolute Maximum Ratings ...................................... ESD Ratings.............................................................. Recommended Operating Conditions....................... Thermal Information .................................................. Electrical Characteristics........................................... Typical Characteristics .............................................. Detailed Description ............................................ 11 7.1 Overview ................................................................. 11 7.2 Functional Block Diagram ....................................... 11 7.3 Feature Description................................................. 11 7.4 Device Functional Modes........................................ 14 8 Applications and Implementation ...................... 18 8.1 Application Information............................................ 18 8.2 Typical Applications ................................................ 18 9 Power Supply Recommendations...................... 22 10 Layout................................................................... 23 10.1 Layout Guidelines ................................................. 23 10.2 Layout Examples................................................... 23 11 Device and Documentation Support ................. 25 11.1 11.2 11.3 11.4 11.5 Documentation Support ....................................... Related Links ........................................................ Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 25 25 25 25 25 12 Mechanical, Packaging, and Orderable Information ........................................................... 25 4 Revision History Changes from Original (April 2015) to Revision A • 2 Page INA250A2 released to production........................................................................................................................................... 1 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 5 Pin Configuration and Functions PW Package TSSOP-16 Top View IN- 1 16 IN+ IN- 2 15 IN+ IN- 3 14 IN+ SH- 4 13 SH+ VIN- 5 12 VIN+ GND 6 11 GND REF 7 10 VS GND 8 9 OUT Pin Functions PIN NAME NO. I/O DESCRIPTION GND 6, 8, 11 Analog IN– 1, 2, 3 Analog input Ground Connect to load IN+ 14, 15, 16 Analog input Connect to supply OUT 9 REF 7 Analog input SH- 4 Analog output Kelvin connection to internal shunt. Connect to VIN– if no filtering is needed. See Figure 27 for filter recommendations. SH+ 13 Analog output Kelvin connection to internal shunt. Connect to VIN+ if no filtering is needed. See Figure 27 for filter recommendations. VIN– 5 Analog input Voltage input from load side of shunt resistor. VIN+ 12 Analog input Voltage input from supply side of shunt resistor. VS 10 Analog Analog output Output voltage Reference voltage, 0 V to VS (up to 18 V) Device power supply, 2.7 V to 36 V. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 3 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN Supply voltage (VS) MAX UNIT 40 V Analog input current Continuous current ±15 A Analog inputs (IN+, IN–) Common-mode GND – 0.3 40 V Common-mode GND – 0.3 40 V Analog inputs (VIN+, VIN–) Differential (VIN+) – (VIN–) Analog inputs (REF) Analog outputs (SH+, SH–) Common-mode Analog outputs (OUT) –40 40 V GND – 0.3 VS + 0.3 V GND – 0.3 40 V GND – 0.3 (VS + 0.3) up to 18 V –55 150 °C 150 °C 150 °C Operating, TA Temperature Junction, TJ Storage, Tstg (1) –65 Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. 6.2 ESD Ratings VALUE V(ESD) (1) (2) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000 UNIT V JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions MIN NOM MAX 0 36 UNIT VCM Common-mode input voltage V VS Operating supply voltage 2.7 36 V TA Operating free-air temperature –40 125 °C 6.4 Thermal Information INA250 THERMAL METRIC (1) PW (TSSOP) UNIT 16 PINS RθJA Junction-to-ambient thermal resistance 104.4 RθJC(top) Junction-to-case (top) thermal resistance 42.3 RθJB Junction-to-board thermal resistance 48.5 ψJT Junction-to-top characterization parameter 4.5 ψJB Junction-to-board characterization parameter 48 RθJC(bot) Junction-to-case (bottom) thermal resistance N/A (1) 4 °C/W For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 6.5 Electrical Characteristics At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted. PARAMETER CONDITIONS MIN TYP MAX UNIT INPUT VCM Common-mode input range CMR Common-mode rejection VIN+ = 0 V to 36 V, TA = –40°C to 125°C IOS Offset current, RTI (1) INA250A2, ISENSE = 0 A dIOS/dT RTI versus temperature TA = –40°C to 125°C PSR IB 97 VS = 2.7 V to 36 V, TA = –40°C to 125°C Input bias current VREF –0.1 IB+, IB-, ISENSE = 0 A Reference input range (2) 36 V 110 dB ±12.5 ±50 mA 25 250 μA/°C ±0.03 ±1 mA/V ±28 ±35 μA (VS) up to 18 V 0 SHUNT RESISTOR (3) RSHUNT Equivalent resistance when used with onboard amplifier Shunt resistance (SH+ to SH–) Used as stand-alone resistor (4) Package resistance Resistor temperature coefficient ISENSE 1.998 1.9 2 2.002 mΩ 2 2.1 mΩ IN+ to IN– 4.5 mΩ TA = –40°C to 125°C 15 ppm/°C TA = –40°C to 0°C 50 ppm/°C TA = 0°C to 125°C 10 ppm/°C Maximum continuous current (5) TA = –40°C to 85°C Shunt short time overload ISENSE = 30 A for 5 seconds 0.05% Shunt thermal shock –65°C to 150°C, 500 cycles 0.1% Shunt resistance to solder heat 260°C solder, 10 s 0.1% Shunt high temperature exposure 1000 hours, TA = 150°C Shunt cold temperature storage 24 hours, TA = –65°C ±15 A 0.15% 0.025% OUTPUT G Gain INA250A1 200 mV/A INA250A2 500 mV/A INA250A3 800 mV/A INA250A4 2 ISENSE = –10 A to 10 A, TA = 25°C System gain error (6) ±0.05% ISENSE = –10 A to 10 A, TA = –40°C to 125°C Nonlinearity error (1) (2) (3) (4) (5) (6) 45 ISENSE = 0.5 A to 10 A ppm/°C ±0.03% Output impedance Maximum capacitive load ±0.3% ±0.75% TA = –40°C to 125°C RO V/A No sustained oscillation 1.5 Ω 1 nF RTI = referred-to-input. The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V. See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor. The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See Integrated Shunt Resistor for more information. See Figure 24 and the Layout section for additional information on the current derating and layout recommendations to improve the current handling capability of the device at higher temperatures. System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical Characteristics table. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 5 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Electrical Characteristics (continued) At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, ISENSE = IN+ = 0 A, unless otherwise noted. PARAMETER VOLTAGE OUTPUT CONDITIONS MIN TYP MAX UNIT (7) Swing to VS power-supply rail RL = 10 kΩ to GND (VS) – 0.1 (VS) – 0.2 Swing to GND RL = 10 kΩ to GND (VGND) + 25 (VGND) + 50 V mV FREQUENCY RESPONSE BW Bandwidth INA250A2, CL = 10 pF 50 kHz SR Slew rate CL = 10 pF 0.2 V/μs 35 nV/√Hz NOISE, RTI (1) Voltage noise density POWER SUPPLY VS Operating voltage range IQ Quiescent current 2.7 TA = –40°C to 125°C 200 36 V 300 μA 125 °C TEMPERATURE RANGE Specified range (7) 6 –40 See Typical Characteristic curve, Output Voltage Swing vs Output Current (Figure 13). Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 6.6 Typical Characteristics At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, INA250A2, ISENSE = IN+ = 0 A, unless otherwise noted. 50 Population Input Offset Current (mA) 40 30 20 10 0 ±10 ±20 ±30 45 40 35 30 25 20 15 5 10 0 -5 -10 -15 -20 -25 ±40 ±50 ±50 Offset Current (mA) ±25 0 25 50 75 100 125 Temperature (C) C001 150 C002 Figure 2. Input Offset vs Temperature Figure 1. Input Offset Distribution 4 Population CMRR (mA/V) 3 2 5 4.5 4 3.5 3 2 2.5 1.5 1 0.5 0 -0.5 -1 -1.5 -2 1 0 ±50 Common-Mode Rejection Ratio (mA/V) ±25 0 25 50 75 100 125 Temperature (C) C003 150 C004 Figure 4. Common-Mode Rejection Ratio vs Temperature Figure 3. Common-Mode Rejection Ratio Distribution 0 Population PSRR (µA/V) -20 -40 -60 150 125 100 75 50 25 0 -25 -50 -75 -100 -125 -150 -80 -100 ±50 Power Supply Rejection Ratio (µA/V) ±25 0 25 50 75 100 125 Temperature (C) C005 150 C006 Figure 6. Power-Supply Rejection Ratio vs Temperature Figure 5. Power-Supply Rejection Ratio Distribution Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 7 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Typical Characteristics (continued) At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, INA250A2, ISENSE = IN+ = 0 A, unless otherwise noted. 0.5 0.4 0.2 Population Gain Error (%) 0.3 0.1 0 -0.1 -0.2 -0.3 75 100 125 150 0.2 0.1 0 0.25 50 0.15 25 Temperature (C) 0.05 0 -0.05 ±25 -0.1 ±50 -0.15 -0.5 -0.2 -0.25 -0.4 System Gain Error (%) C033 C007 System gain error = RSHUNT error + amplifier gain error, load current = 10 A Figure 8. System Gain Error Distribution Figure 7. System Gain Error vs Temperature 0.5 50 0.4 45 40 0.2 0.1 Gain (dB) Gain Error (%) 0.3 0 -0.1 -0.2 35 30 25 -0.3 20 -0.4 -0.5 15 ±50 ±25 0 25 50 75 100 125 Temperature (C) 150 1 10 100 1k 10k Frequency (Hz) 100k C008 1M C009 VCM = 12 V, ISENSE = 500 mAPP Figure 9. Amplifier Gain Error vs Temperature Figure 10. Amplifier Gain vs Frequency 120 160 140 100 100 CMR (dB) PSR (dB) 120 80 60 40 80 60 40 20 0 1 20 10 100 1k 10k Frequency (Hz) 100k 1M C010 1 10 100 1k Frequency (Hz) 10k 100k C011 VS = 5 V, VREF = 2.5 V, ISENSE = 0 A, VCM = 1-V sine wave VCM = 12 V, VREF = 2.5 V, ISENSE = 0 A, VS = 5 V + 250-mV sine disturbance Figure 11. Power-Supply Rejection vs Frequency 8 0.1 Figure 12. Common-Mode Rejection vs Frequency Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 Typical Characteristics (continued) At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, INA250A2, ISENSE = IN+ = 0 A, unless otherwise noted. 60 VS -40°C 50 25°C Input Bias Current (µA) Output Voltage Swing (V) VS - 1 125°C VS - 2 VS - 3 GND + 3 GND + 2 IB+, IB-, VREF = 0 V 40 30 20 IB+, IB-, VREF = 2.5 V 10 0 GND + 1 GND 0 2 4 6 8 10 12 14 ±10 0 16 5 10 15 20 25 30 35 40 Common-Mode Voltage (V) Current (mA) C013 ISENSE = 0 A, VS = 5 V Figure 13. Output Voltage Swing vs Output Current Figure 14. Input Bias Current vs Common-Mode Voltage (VS = 5 V) 40 40 35 Input Bias Current (µA) Input Bias Current (µA) 35 30 IB+ 25 20 IB15 10 IB+, IB30 25 20 15 5 0 0 10 5 10 15 20 25 30 35 Common-Mode Voltage (V) ±50 40 ±25 0 25 50 75 100 125 150 Temperature (C) C014 ISENSE = 0 A, VS = 0 V, VREF = 0 V C015 ISENSE = 0 A, VS = 5 V Figure 15. Input Bias Current vs Common-Mode Voltage (VS = 0 V) Figure 16. Input Bias Current vs Temperature 400 250 350 VS = 5 V 300 VS = 2.7 V Quiescent Current (µA) Quiescent Current (µA) VS = 36 V 250 200 150 225 200 175 100 50 ±50 ±25 0 25 50 75 100 125 Temperature (C) 150 C016 VREF = VS / 2 150 0 5 10 15 20 25 30 35 Supply Voltage (V) 40 C017 VREF = 2.5 V Figure 17. Quiescent Current vs Temperature Figure 18. Quiescent Current vs Supply Voltage Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 9 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Typical Characteristics (continued) At TA = 25°C, VS = 5 V, VIN+ = 12 V, VREF = 2.5 V, INA250A2, ISENSE = IN+ = 0 A, unless otherwise noted. Input-Referred Voltage Noise (nV/¥Hz) Referred-to-Input Voltage Noise (200 nV/div) 100 10 1 10 100 10k 1k Frequency (Hz) 100k Time (1 s/div) C018 C019 VS = 5 V, VREF = 2.5 V, ISENSE = 0 A VS = 5 V, VCM = 0 V, ISENSE = 0 A Figure 20. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input) Output (0.5 V/div) Output (0.5 V/div) Figure 19. Input-Referred Voltage Noise vs Frequency 2.5 V Input (5 V/div) Input (5 mV/div) 0V 0V 0V Time (25 µs/div) Time (40 µs/div) C020 C021 Input = (VIN+) - (VIN-) Input = VIN+, VREF = 2.5 V Figure 22. Common-Mode Transient Response Output (1 V/div) Figure 21. Step Response Supply (2 V/div) 0V 0V Time (20 µs/div) C024 Figure 23. Start-Up Response 10 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 7 Detailed Description 7.1 Overview The INA250 features a 2-mΩ, precision, current-sensing resistor and a 36-V common-mode, zero-drift topology, precision, current-sensing amplifier integrated into a single package. High precision measurements are enabled through the matching of the shunt resistor value and the current-sensing amplifier gain providing a highlyaccurate, system-calibrated solution. Multiple gain versions are available to allow for the optimization of the desired full-scale output voltage based on the target current range expected in the application. 7.2 Functional Block Diagram IN+ SH+ VS VIN+ REF + OUT - IN- SH- VIN- GND 7.3 Feature Description 7.3.1 Integrated Shunt Resistor The INA250 features a precise, low-drift, current-sensing resistor to allow for precision measurements over the entire specified temperature range of –40°C to 125°C. The integrated current-sensing resistor ensures measurement stability over temperature as well as improving layout and board constraint difficulties common in high precision measurements. The onboard current-sensing resistor is designed as a 4-wire (or Kelvin) connected resistor that enables accurate measurements through a force-sense connection. Connecting the amplifier inputs pins (VIN– and VIN+) to the sense pins of the shunt resistor (SH– and SH+) eliminates many of the parasitic impedances commonly found in typical very-low sensing-resistor level measurements. Although the sense connection of the current-sensing resistor can be accessed via the SH+ and SH– pins, this resistor is not intended to be used as a stand-alone component. The INA250 is system-calibrated to ensure that the current-sensing resistor and current-sensing amplifier are both precisely matched to one another. Use of the shunt resistor without the onboard amplifier results in a current-sensing resistor tolerance of approximately 5%. To achieve the optimized system gain specification, the onboard sensing resistor must be used with the internal current-sensing amplifier. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 11 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Feature Description (continued) The INA250 has approximately 4.5 mΩ of package resistance. 2 mΩ of this total package resistance is a precisely-controlled resistance from the Kelvin-connected current-sensing resistor used by the amplifier. The power dissipation requirements of the system and package are based on the total 4.5-mΩ package resistance between the IN+ and IN– pins. The heat dissipated across the package when current flows through the device ultimately determines the maximum current that can be safely handled by the package. The current consumption of the silicon is relatively low, leaving the total package resistance carrying the high load current as the primary contributor to the total power dissipation of the package. The maximum safe-operating current level is set to ensure that the heat dissipated across the package is limited so that no damage to the resistor or the package itself occurs or that the internal junction temperature of the silicon does not exceed a 150°C limit. External factors (such as ambient temperature, external air flow, and PCB layout) can contribute to how effectively the heat developed as a result of the current flowing through the total package resistance can be removed from within the device. Under the conditions of no air flow, a maximum ambient temperature of 85°C, and 1-oz. copper input power planes, the INA250 can accommodate continuous current levels up to 15 A. As shown in Figure 24, the current handling capability is derated at temperatures above the 85°C level with safe operation up to 10 A at a 125°C ambient temperature. With air flow and larger 2-oz. copper input power planes, the INA250 can safely accommodate continuous current levels up to 15 A over the entire –40°C to 125°C temperature range. 20 Maximum Continuous Current (A) 17.5 15 12.5 10 7.5 5 ±50 ±25 0 25 50 75 100 125 Temperature (C) 150 C026 Figure 24. Maximum Current vs Temperature 7.3.2 Short-Circuit Duration The INA250 features a physical shunt resistance that is able to withstand current levels higher than the continuous handling limit of 15 A without sustaining damage to the current-sensing resistor or the current-sensing amplifier if the excursions are very brief. Figure 25 shows the short-circuit duration curve for the INA250. 100 Current (A) 80 60 40 20 0 0.1 1 10 Time (s) 100 C027 Figure 25. Short-Circuit Duration 12 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 Feature Description (continued) 7.3.3 Temperature Stability System calibration is common for many industrial applications to eliminate initial component and system-level errors that can be present. A system-level calibration can reduce the initial accuracy requirement for many of the individual components because the errors associated with these components are effectively eliminated through the calibration procedure. Performing this calibration can enable precision measurements at the temperature in which the system is calibrated, but as the system temperature changes as a result of external ambient changes or due to self heating, measurement errors are reintroduced. Without accurate temperature compensation used in addition to the initial adjustment, the calibration procedure is not effective in accounting for these temperatureinduced changes. One of the primary benefits of the very low temperature coefficient of the INA250 (including both the integrated current-sensing resistor and current-sensing amplifier) is ensuring that the device measurement remains highly accurate, even when the temperature changes throughout the specified temperature range of the device. For the integrated current-sensing resistor, the drift performance is shown in Figure 26. Although several temperature ranges are specified in the Electrical Characteristics table, applications operating in ranges other than those described can use Figure 26 to determine how much variance in the shunt resistor value can be expected. As with any resistive element, the tolerance of the component varies when exposed to different temperature conditions. For the current-sensing resistor integrated in the INA250, the resistor does vary slightly more when operated in temperatures ranging from –40°C to 0°C than when operated from 0°C to 125°C. However, even in the –40°C to 0°C temperature range, the drift is still quite low at 25 ppm/°C. Shunt Resistance (m) 2.005 2 1.995 1.99 ±50 ±25 0 25 50 75 Temperature (C) 100 125 150 C030 Figure 26. Sensing Resistor vs Temperature An additional aspect to consider is that when current flows through the current-sensing resistor, power is dissipated across this component. This dissipated power results in an increase in the internal temperature of the package, including the integrated sensing resistor. This resistor self-heating effect results in an increase of the resistor temperature helping to move the component out of the colder, wider drift temperature region. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 13 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com 7.4 Device Functional Modes 7.4.1 Input Filtering An obvious and straightforward location for filtering is at the device output; however, this location negates the advantage of the low output impedance of the output stage buffer. The input then represents the best location for implementing external filtering. Figure 27 shows the typical implementation of the input filter for the device. CF RS VIN- SH- ¦-3dB = 1 RINT 2RSCF ¦-3dB Bias OUT + RINT SH+ REF VIN+ RS CF Figure 27. Input Filter The addition of external series resistance at the input pins to the amplifier, however, creates an additional error in the measurement. Keep the value of these series resistors to 10 Ω or less, if possible, to reduce the affect to accuracy. The internal bias network shown in Figure 27 present at the input pins creates a mismatch in input bias currents when a differential voltage is applied between the input pins, as shown in Figure 28. 80 Input Bias Current (µA) 70 IB+ 60 50 40 30 20 IB- 10 0 ±10 ±20 0 20 40 60 Differential Input Voltage (mV) 80 100 C029 Figure 28. Input Bias Current vs Differential Input Voltage 14 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 Device Functional Modes (continued) 7.4.1.1 Calculating Gain Error Resulting from External Filter Resistance If additional external series filter resistors are added to the circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This mismatch creates a differential error voltage that subtracts from the voltage developed across the Kelvin connection of the shunt resistor, thus reducing the voltage that reaches the amplifier input terminals. Without the additional series resistance, the mismatch in input bias currents has little effect on device operation as a result of the low input bias current of the amplifier and the typically low impedance of the traces between the shunt and amplifier input pins. The amount of error these external filter resistors add to the measurement can be calculated using Equation 2, where the gain error factor is calculated using Equation 1. The amount of variance between the differential voltage present at the device input relative to the voltage developed at the shunt resistor is based both on the external series resistance value as well as the internal input resistors, RINT; see Figure 27. The reduction of the shunt voltage reaching the device input pins appears as a gain error when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to determine the amount of gain error that is introduced by the addition of external series resistance. Equation 1 calculates the expected deviation from the shunt voltage compared to the expected voltage at the device input pins. (1250 ´ RINT) Gain Error Factor = (1250 ´ RS) + (1250 ´ RINT) + (RS ´ RINT) where: • • RINT is the internal input resistor and RS is the external series resistance (1) Gain Error (%) = 100 - (100 ´ Gain Error Factor) (2) With the adjustment factor equation including the device internal input resistance, this factor varies with each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2. The gain error that can be expected from the addition of the external series resistors can then be calculated based on Equation 2. Table 1. Input Resistance DEVICE GAIN RINT INA250A1 200 mV/A 50 kΩ INA250A2 500 mV/A 20 kΩ INA250A3 800 mV/A 12.5 kΩ INA250A4 2 V/A 5 kΩ Table 2. Device Gain Error Factor DEVICE SIMPLIFIED GAIN ERROR FACTOR 50,000 INA250A1 (41 · RS) + 50,000 20,000 INA250A2 (17 · RS) + 20,000 12,500 INA250A3 (11 · RS) + 12,500 1,000 INA250A4 RS + 1,000 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 15 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com For example, using an INA250A2 and the corresponding gain error equation from Table 2, a series resistance of 10 Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 2, resulting in a gain error of approximately 0.84% because of the external 10-Ω series resistors. 7.4.2 Shutting Down the Device Although the device does not have a shutdown pin, the low power consumption allows for the device to be powered from the output of a logic gate or transistor switch that can turn on and turn off the voltage connected to the device power-supply pin. However, in current-shunt monitoring applications, there is also a concern for how much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the device simplified schematic in shutdown mode, as shown in Figure 29. Shutdown Control CBYPASS 0.1 µF Supply Voltage Supply IN+ VS REF + OUT - IN- GND Load Figure 29. Shutting Down the Device Note that there is typically an approximate 1-MΩ impedance (from the combination of the feedback and input resistors) from each device input to the REF pin. The amount of current flowing through these pins depends on the respective configuration. For example, if the REF pin is grounded, calculating the effect of the 1-MΩ impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered when the device is shut down, the calculation is direct. Instead of assuming 1 MΩ to ground, assume 1 MΩ to the reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is required. For instance, if the reference source functions similar to an open circuit when un-powered, little or no current flows through the 1-MΩ path. 16 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 7.4.3 Using the Device with Common-Mode Transients Above 36 V With a small amount of additional circuitry, the device can be used in circuits subject to transients higher than 36 V (such as in automotive applications). Use only zener diodes or zener-type transient absorbers (sometimes referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding a pair of resistors, as shown in Figure 30, as a working impedance for the zener. Keeping these resistors as small as possible is preferable, most often approximately 10 Ω. This value limits the affect on accuracy with the addition of these external components, as described in the Input Filtering section. Device interconnections between the shunt resistor and amplifier have a current handling limit of 1 A. Using a 10-Ω resistor limits the allowable transient range to 10 V above the zener clamp in order to not damage the device. Larger resistor values can be used in this protection circuit to accommodate a larger transient voltage range, resulting in a larger affect on gain error. Because this circuit limits only short-term transients, many applications are satisfied with a 10-Ω resistor along with conventional zener diodes of the lowest power rating available. 2.7-V to 36-V Supply CBYPASS 0.1 µF VS Supply IN- SH+ SH- VIN+ VIN- Load RZ 10 + RZ 10 IN+ REF OUT GND Figure 30. Device Transient Protection Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 17 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com 8 Applications and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 8.1 Application Information The INA250 measures the voltage developed across the internal current-sensing resistor when current passes through it. The ability to drive the reference pin to adjust the functionality of the output signal offers multiple configurations, as discussed in this section. 8.2 Typical Applications 8.2.1 Current Summing Supply 2.7-V to 36-V Supply CBYPASS 0.1 µF VS IN+ REF + OUT 2.7-V to 36-V Supply CBYPASS 0.1 µF IN- GND Load Supply Supply VS IN+ GND IN- REF 2.7-V to 36-V Supply IN+ OUT CBYPASS 0.1 µF - VS REF + - IN- + OUT Summed Output Load GND Load Figure 31. Daisy-Chain Configuration 18 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 Typical Applications (continued) 8.2.1.1 Design Requirements Three daisy-chained devices are illustrated in Figure 31. The reference input of the first INA250 sets the quiescent level on the output of all the INA250 devices in the string. 8.2.1.2 Detailed Design Procedure The outputs of multiple INA250 devices are easily summed by connecting the output signal of one INA250 to the reference input of a second INA250. Summing beyond two devices is possible by repeating this configuration, connecting the output signal of the next INA250 to the reference pin of a subsequent INA250 in the chain. The output signal of the final INA250 in this chain includes the current level information for all channels in the chain. Output Voltage (1 V/diV) 8.2.1.3 Application Curve 0V Output Input Current (1 A/div) Input B 0A 0A Input A Time (0.5 ms/div) C034 VS = 5 V, VREF = 2.5 V Figure 32. Daisy-Chain Configuration Output Response Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 19 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Typical Applications (continued) 8.2.2 Parallel Multiple INA250 Devices for Higher Current 2.7-V to 36-V Supply CBYPASS 0.1 µF VS 2.7-V to 36-V Supply Supply IN+ IN+ CBYPASS 0.1 µF VS REF OUT REF + + - OUT From Out of First Channel Paralleled Output - To REF of Second Channel GND IN- IN- GND Load Figure 33. Parallel Summing Configuration 8.2.2.1 Design Requirements The parallel connection for multiple INA250 devices can be used to reduce the equivalent overall sense resistance, enabling monitoring of higher current levels than a single device is able to accommodate alone. This configuration also uses a summing arrangement, as described in the Current Summing section. A parallel summing configuration is shown in Figure 33. 8.2.2.2 Detailed Design Procedure With a summing configuration the output of the first channel is fed into the reference input of the second, adding the distributed measurements back together into a single measured value. Output Voltage (5 V/div) 8.2.2.3 Application Curve Output B 12 V Input Current (10 A/div) Outut A 0A Input Time (0.5 ms/div) C036 VS = 24 V, VREF = 12 V Figure 34. Parallel Configuration Output Response 20 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 Typical Applications (continued) 8.2.3 Current Differencing Supply IN+ 2.7-V to 36-V Supply CBYPASS 0.1 µF Supply, Reference Voltage VS + + REF OUT - To REF of Second Channel IN- GND Q1 D1 Mosfet Drive Circuits D2 2.7-V to 36-V Supply CBYPASS 0.1 µF Q2 IN- VS + OUT REF IN+ Differenced Output From Out of First Channel GND Figure 35. Current Differencing Configuration Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 21 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Typical Applications (continued) 8.2.3.1 Design Requirements Occasionally, the need may arise to confirm that the current into a load is identical to the current coming out of a load, such as when performing diagnostic testing or fault detection. This procedure requires precision current differencing. This method is the same as current summing, except that the two amplifiers have the respective inputs connected opposite of each other. Under normal operating conditions, the final output is very close to the reference value and proportional to any current difference. Figure 35 is an example of two INA250 devices connected for current differencing. 8.2.3.2 Detailed Design Procedure The load current can also be measured directly at the output of the first channel. Although technically this configuration is current differencing, this connection (see Figure 35) is really intended to allow the upper (positive) sense channel to report any positive-going excursions in the overall output and the lower (negative) sense channel to report any negative-going excursions. Output Voltage (250 mV/div) 8.2.3.3 Application Curve 2.5 V Input B Input Current (2.5 A/div) Input A 0A Time (25 ms/div) C035 VS = 5 V, VREF = 2.5 V Figure 36. Current Differencing Configuration Output Response 9 Power Supply Recommendations The input circuitry of the device can accurately measure signals on common-mode voltages beyond the powersupply voltage, VS. For example, the voltage applied to the VS power-supply pin can be 5 V, whereas the load power-supply voltage being monitored (the common-mode voltage) can be as high as 36 V. Note also that the device can withstand the full 0-V to 36-V range at the input pins, regardless of whether the device has power applied or not. Power-supply bypass capacitors are required for stability and must be placed as closely as possible to the supply and ground pins of the device. A typical value for this supply bypass capacitor is 0.1 μF. Applications with noisy or high-impedance power supplies can require additional decoupling capacitors to reject power-supply noise. 22 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 10 Layout 10.1 Layout Guidelines • • • • The INA250 is specified for current handling of up to 10 A over the entire –40°C to 125°C temperature range using a 1-oz. copper pour for the input power plane as well as no external airflow passing over the device. The primary current-handling limitation for the INA250 is how much heat is dissipated inside the package. Efforts to improve heat transfer out of the package and into the surrounding environment improve the ability of the device to handle currents of up to 15 A over the entire –40°C to 125°C temperature range. Heat transfer improvements primarily involve larger copper power traces and planes with increased copper thickness (2 oz.) as well as providing airflow to pass over the device. The INA250EVM features a 2-oz. copper pour for the planes and is capable of supporting 15 A at temperatures up to 125°C. Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added to compensate for noisy or high-impedance power supplies. 10.2 Layout Examples Figure 37. Recommended Layout Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 23 INA250A1, INA250A2, INA250A3, INA250A4 SBOS511A – APRIL 2015 – REVISED MAY 2015 www.ti.com Layout Examples (continued) J1 J2 108-0740-001 108-0740-001 C4 DNP U1 16 15 14 IN+ SH+ SH- VIN+ 12 VIN+ C3 DNP 0 R2 VIN+ VINREF VS OUT VIN+ VINREF VS OUT GND 0 R1 GND IN+ IN- GND IN+ IN- 13 SH+ VIN- REF VS C5 DNP 7 10 IN+ IN+ IN+ 1 2 3 INININ- VIN+ 5 VIN- SH+ SH- REF OUT VS GND GND GND 4 9 6 8 11 T1 INVS GND REF OUT VINSH- 1 2 3 4 ED555/4DS OUT GND INA250A2PW TPGnd3 TPGnd2 GND VS GND C2 0.1µF C1 1µF Figure 38. Recommended Layout Schematic 24 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 INA250A1, INA250A2, INA250A3, INA250A4 www.ti.com SBOS511A – APRIL 2015 – REVISED MAY 2015 11 Device and Documentation Support 11.1 Documentation Support 11.1.1 Related Documentation • INA250EVM User Guide, SBOU153 11.2 Related Links The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. Table 3. Related Links PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY INA250A1 Click here Click here Click here Click here Click here INA250A2 Click here Click here Click here Click here Click here INA250A3 Click here Click here Click here Click here Click here INA250A4 Click here Click here Click here Click here Click here 11.3 Trademarks All trademarks are the property of their respective owners. 11.4 Electrostatic Discharge Caution This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 12 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated INA250A2 25 PACKAGE OPTION ADDENDUM www.ti.com 16-Sep-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) INA250A1PW PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A1 INA250A1PWR PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A1 INA250A2PW ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A2 INA250A2PWR ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A2 INA250A3PW PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A3 INA250A3PWR PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A3 INA250A4PW PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A4 INA250A4PWR PREVIEW TSSOP PW 16 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 125 I250A4 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 16-Sep-2015 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 13-May-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device INA250A2PWR Package Package Pins Type Drawing TSSOP PW 16 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2000 330.0 12.4 Pack Materials-Page 1 6.9 B0 (mm) K0 (mm) P1 (mm) 5.6 1.6 8.0 W Pin1 (mm) Quadrant 12.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 13-May-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) INA250A2PWR TSSOP PW 16 2000 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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