MMBT4403GH

Zowie Technology Corporation
Switching Transistor
PNP Silicon
Lead free product
Halogen-free type
3
COLLECTOR
3
MMBT4403GH
1
BASE
1
2
2
EMITTER
SOT-23
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
- 40
Vdc
Collector-Base Voltage
VCBO
- 40
Vdc
Emitter-Base Voltage
VEBO
- 5.0
Vdc
IC
- 600
mAdc
Symbol
Max.
Unit
PD
225
1.8
mW
mW / oC
R JA
556
PD
300
2.4
R JA
TJ,TSTG
417
-55 to +150
Rating
Collector Current-Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR-5 Board
o
Derate above 25 C
(1)
o
TA=25 C
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,
o
Derate above 25 C
(2)
o
TA=25 C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
o
C/W
mW
mW / oC
o
C/W
o
C
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Symbol
Min.
Max.
Unit
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdowe Voltage
( IC= -0.1 mAdc, IE=0 )
V(BR)CBO
-40
-
Vdc
Emitter-Base Breakdowe Voltage
( IE= -0.1 mAdc, IC=0 )
V(BR)EBO
-5.0
-
Vdc
Base Cutoff Current
( VCE= -35 Vdc, VEB= -0.4 Vdc )
IBEV
-
-0.1
Adc
Collector Cutoff Current
( VCE= -35 Vdc, VEB= -0.4 Vdc )
ICEX
-
-0.1
Adc
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage
( IC= -1.0mAdc, IB=0 )
(3)
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width≦300uS, Duty Cycle≦2.0%.
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4403GH
o
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued)
Min.
Max.
30
60
100
100
20
300
-
VCE(sat)
-
-0.4
-0.75
Vdc
VBE(sat)
-0.75
-
-0.95
-1.3
Vdc
fT
200
-
MHZ
Ccb
-
8.5
pF
Ceb
-
30
pF
hie
1.5
15
k ohms
Voltage Feedback Ratio
( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ )
hre
0.1
8.0
X 10
Small-Signal Current Gain
( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ )
hfe
60
500
-
Output Admittance
( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ )
hoe
1.0
100
mhos
( VCC=-30 Vdc, VEB=-2.0 Vdc,
IC=-150 mAdc, IB1=-15 mAdc )
td
-
15
tr
-
20
( VCC=-30 Vdc, IC=-150 mAdc,
IB1=IB2=-15 mAdc )
ts
-
225
tf
-
30
Symbol
Characteristic
ON CHARACTERISTICS
Unit
(3)
DC Current Gain
( IC=-0.1 mAdc, VCE=-1.0 Vdc )
( IC=-1.0 mAdc, VCE=-1.0 Vdc )
( IC=-10 mAdc, VCE=-1.0 Vdc )
(3)
( IC=-150 mAdc, VCE=-2.0 Vdc )
(3)
( IC=-500 mAdc, VCE=-2.0 Vdc )
Collector-Emitter Saturation Voltage
( IC=-150 mAdc, IB=-15 mAdc )
( IC=-500 mAdc, IB=-50 mAdc )
HFE
-
(3)
(3)
Base-Emitter Saturation Voltage
( IC=-150 mAdc, IB=-15 mAdc )
( IC=-500 mAdc, IB=-50 mAdc )
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC=-20 mAdc, VCE=-10 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB=-10Vdc, IE=0, f=1.0 MHZ )
Emitter-Base Capacitance
( VBE=-0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ )
-4
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(3) Pulse Test : Pulse Width
300uS, Duty Cycle
nS
nS
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
-30 V
-30 V
200
+2.0 V
< 2.0 ns
200
< 20 ns
1.0 k
0
0
CS* < 10 pF*
-16 V
1.0 to 100 us,
DUTY CYCLE = 2%
Figure 1. Turn-On Time
REV. 0
+14 V
1.0 k
CS* < 10 pF*
1N916
-16 V
1.0 to 100 us,
Scope rise time < 4.0 ns
DUTY CYCLE = 2%
* Total shunt capacitance of test jig and connectors
+4.0V
Figure 2. Turn-Off Time
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4403GH
TYPICAL TRANSIENT CHARACTERISTICS
T J = 25°C
T J = 100°C
30
10
7.0
C eb
10
7.0
C cb
5.0
3.0
2.0
1.0
0.7
0.5
QT
0.3
3.0
2.0
0.1
QA
0.2
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
10
20
30
50
70
100
200
REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 3. Capacitance
Figure 4. Charge Data
300
500
100
100
I C /I B = 10
70
t r, RISE TIME (ns)
t r @V CC=30V
t r @V CC=10V
30
t d@VBE(off) = 2.0V
t d@VBE(off) = 0V
20
V CC= 30V
I C / I B =10
70
50
t , TIME (ns)
V CC = 30 V
I C / I B = 10
5.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
50
30
20
10
10
7.0
7.0
5.0
5.0
10
20
30
50
70
100
200
300
500
10
20
30
50
70
100
200
300
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Rise Time
500
200
t s , RISE TIME (ns)
I C/I B = 20
100
I C/I B = 10
70
50
t s’ = t s – 1/8 t f
I B1 = I B2
30
20
10
20
30
50
70
100
200
300
500
I C , COLLECTOR CURRENT (mA)
Figure 7. Storage Time
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4403GH
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V CE = –10 Vdc, T A = 25°C
Bandwidth = 1.0 Hz
10
10
f = 1.0 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
I C = 1.0 mA, R S = 430Ω
I C = 500 μA, R S = 560Ω
I C = 50 μ A, R S = 2.7kΩ
6
I C = 100μ A, R S = 1.6 kΩ
4
2
RS = OPTIMUM
0
I C = 50μA
100μA
500μA
1.0 mA
6
4
2
0
0.010.02 0.05 0.1 0.2
0.5 1.0
2.0
5.0 10
20
50
100
50 100
200
500
1k
2k
5k
10k
20k
f , FREQUENCY (kHz)
R S, SOURCE RESISTANCE Ω
( )
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50k
h PARAMETERS
(V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C)
This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves,
a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly
numbered curves on each graph.
100
700
50
h ie, INPUT IMPEDANCE (kΩ)
1000
h fe, CURRENT GAIN
500
300
200
MMBT4403G UNIT 1
MMBT4403G UNIT 2
100
70
50
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
5
2
1
0.5
0.2
0.2
0.3
0.5 0.7
1.0
2.0
3.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 10. Current Gain
Figure 11. Input Impedance
20
10
MMBT4403LG UNIT 1
MMBT440G UNIT 2
5.0
2.0
1.0
0.5
0.2
0.1
0.1
0.1
10
h oe , OUTPUT ADMITTANCE μ
( mhos)
h re, VOLTAGE FEEDBACK RATIO (X 10 –4 )
20
0.1
30
REV. 0
MMBT4403G UNIT 1
MMBT4403G UNIT 2
0.2
0.3
0.5 0.7
1.0
2.0
3.0
7.0 5.0
10
7.0 5.0
10
500
100
50
20
MMBT4403G UNIT 1
10
MMBT4403LG UNIT 2
5.0
2.0
1.0
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
I C , COLLECTOR CURRENT (mAdc)
I C , COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
7.0 5.0
10
Zowie Technology Corporation
Zowie Technology Corporation
MMBT4403GH
STATIC CHARACTERISTICS
h FE , NORMALIZED CURRENT GAIN
3.0
V CE= 1.0 V
V CE= 10 V
2.0
T J = 125°C
25°C
1.0
–55°C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
20
300
500
I C , COLLECTOR CURRENT (mA)
V CE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
I C=1.0 mA
10 mA
100mA
500mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05
0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
I B , BASE CURRENT (mA)
Figure 15. Collector Saturation Region
+ 0.5
T J = 25°C
V, VOLTAGE ( VOLTS )
0
V BE(sat) @ I C /I B =10
0.8
0.6
COEFFICIENT (mV/ °C)
10
V BE @ V CE =1.0 V
0.4
0.2
V CE(sat) @ I C /I B =10
–1.0
–1.5
θ VS for V BE
–2.0
– 2.5
0
0.1
REV. 0
θ VC for VCE(sat)
– 0.5
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
500
0.1
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
Figure 17. Temperature Coefficients
500
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