Zowie Technology Corporation Switching Transistor PNP Silicon Lead free product Halogen-free type 3 3 COLLECTOR MMBT4403GH 1 BASE 1 2 2 EMITTER SOT-23 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO - 40 Vdc Collector-Base Voltage VCBO - 40 Vdc Emitter-Base Voltage VEBO - 5.0 Vdc IC - 600 mAdc Symbol Max. Unit PD 225 1.8 mW mW / oC R JA 556 PD 300 2.4 R JA TJ,TSTG 417 -55 to +150 Rating Collector Current-Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board o Derate above 25 C (1) o TA=25 C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, o Derate above 25 C (2) o TA=25 C Thermal Resistance Junction to Ambient Junction and Storage Temperature o C/W mW mW / oC o C/W o C o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Symbol Min. Max. Unit V(BR)CEO -40 - Vdc Collector-Base Breakdowe Voltage ( IC= -0.1 mAdc, IE=0 ) V(BR)CBO -40 - Vdc Emitter-Base Breakdowe Voltage ( IE= -0.1 mAdc, IC=0 ) V(BR)EBO -5.0 - Vdc Base Cutoff Current ( VCE= -35 Vdc, VEB= -0.4 Vdc ) IBEV - -0.1 Adc Collector Cutoff Current ( VCE= -35 Vdc, VEB= -0.4 Vdc ) ICEX - -0.1 Adc Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdowe Voltage ( IC= -1.0mAdc, IB=0 ) (3) (1) FR-5=1.0 x 0.75 x 0.062in. (2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) Pulse Test : Pulse Width≦300uS, Duty Cycle≦2.0%. REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH o ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Continued) Min. Max. 30 60 100 100 20 300 - VCE(sat) - -0.4 -0.75 Vdc VBE(sat) -0.75 - -0.95 -1.3 Vdc fT 200 - MHZ Ccb - 8.5 pF Ceb - 30 pF hie 1.5 15 k ohms Voltage Feedback Ratio ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) hre 0.1 8.0 X 10 Small-Signal Current Gain ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) hfe 60 500 - Output Admittance ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) hoe 1.0 100 mhos ( VCC=-30 Vdc, VEB=-2.0 Vdc, IC=-150 mAdc, IB1=-15 mAdc ) td - 15 tr - 20 ( VCC=-30 Vdc, IC=-150 mAdc, IB1=IB2=-15 mAdc ) ts - 225 tf - 30 Symbol Characteristic Unit (3) ON CHARACTERISTICS DC Current Gain ( IC=-0.1 mAdc, VCE=-1.0 Vdc ) ( IC=-1.0 mAdc, VCE=-1.0 Vdc ) ( IC=-10 mAdc, VCE=-1.0 Vdc ) (3) ( IC=-150 mAdc, VCE=-2.0 Vdc ) (3) ( IC=-500 mAdc, VCE=-2.0 Vdc ) Collector-Emitter Saturation Voltage ( IC=-150 mAdc, IB=-15 mAdc ) ( IC=-500 mAdc, IB=-50 mAdc ) HFE - (3) (3) Base-Emitter Saturation Voltage ( IC=-150 mAdc, IB=-15 mAdc ) ( IC=-500 mAdc, IB=-50 mAdc ) SMALL-SIGNAL CHARACTERISTIC Current-Gain-Bandwidth Product ( IC=-20 mAdc, VCE=-10 Vdc, f=100 MHZ ) Collector-Base Capacitance ( VCB=-10Vdc, IE=0, f=1.0 MHZ ) Emitter-Base Capacitance ( VBE=-0.5 Vdc, IC=0, f=1.0 MHZ ) Input Impedance ( VCE=-10 Vdc, IC=-1.0 mAdc, f=1.0 kHZ ) -4 SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (3) Pulse Test : Pulse Width 300uS, Duty Cycle nS nS 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS -30 V -30 V 200 +2.0 V < 2.0 ns 200 < 20 ns 1.0 k 0 0 CS* < 10 pF* -16 V 1.0 to 100 us, DUTY CYCLE = 2% Figure 1. Turn-On Time REV. 0 +14 V 1.0 k CS* < 10 pF* 1N916 -16 V 1.0 to 100 us, Scope rise time < 4.0 ns DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors +4.0V Figure 2. Turn-Off Time Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH TYPICAL TRANSIENT CHARACTERISTICS T J = 25°C T J = 100°C 30 10 7.0 C eb 10 7.0 C cb 5.0 3.0 2.0 1.0 0.7 0.5 QT 0.3 3.0 2.0 0.1 QA 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data 300 500 100 100 I C /I B = 10 70 t r, RISE TIME (ns) t r @V CC=30V t r @V CC=10V 30 t d@VBE(off) = 2.0V t d@VBE(off) = 0V 20 V CC= 30V I C / I B =10 70 50 t , TIME (ns) V CC = 30 V I C / I B = 10 5.0 Q, CHARGE (nC) CAPACITANCE (pF) 20 50 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 500 200 t s , RISE TIME (ns) I C/I B = 20 100 I C/I B = 10 70 50 t s’ = t s – 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time REV. 0 Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE V CE = –10 Vdc, T A = 25°C Bandwidth = 1.0 Hz 10 10 f = 1.0 kHz 8 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 8 I C = 1.0 mA, R S = 430Ω I C = 500 μA, R S = 560Ω I C = 50 μ A, R S = 2.7kΩ 6 I C = 100 μA, R S = 1.6 kΩ 4 2 RS = OPTIMUM 0 I C = 50μA 100μA 500μA 1.0 mA 6 4 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10k 20k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (Ω) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50k h PARAMETERS (V CE = –10 Vdc, f = 1.0 kHz, T A = 25°C) This group of graphs illustrates the relationship between h fe and other “h” parameters for this series of ransistors. To obtain these curves, a high–gain and a low–gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 100 700 50 h ie, INPUT IMPEDANCE (kΩ) 1000 h fe, CURRENT GAIN 500 300 200 MMBT4403G UNIT 1 MMBT4403G UNIT 2 100 70 50 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 5 2 1 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 20 10 MMBT4403LG UNIT 1 MMBT440G UNIT 2 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.1 10 h oe , OUTPUT ADMITTANCE (μmhos) h re, VOLTAGE FEEDBACK RATIO (X 10 –4 ) 20 0.1 30 REV. 0 MMBT4403G UNIT 1 MMBT4403G UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 7.0 5.0 10 500 100 50 20 MMBT4403G UNIT 1 10 MMBT4403LG UNIT 2 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance 7.0 5.0 10 Zowie Technology Corporation Zowie Technology Corporation MMBT4403GH STATIC CHARACTERISTICS h FE , NORMALIZED CURRENT GAIN 3.0 V CE= 1.0 V V CE= 10 V 2.0 T J = 125°C 25°C 1.0 –55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 14. DC Current Gain 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region + 0.5 T J = 25°C V, VOLTAGE ( VOLTS ) 0 V BE(sat) @ I C /I B =10 0.8 0.6 COEFFICIENT (mV/ °C) 10 V BE @ V CE =1.0 V 0.4 0.2 V CE(sat) @ I C /I B =10 –1.0 –1.5 θVS for V BE –2.0 – 2.5 0 0.1 REV. 0 θVC for VCE(sat) – 0.5 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients 500 Zowie Technology Corporation