High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol Value Unit Drain – source voltage Rating VDS 25 Vdc Drain gate voltage VDG1 VDG2 30 Vdc Gate current IG1R IG1F IG2R IG2F -10 10 -10 10 mAdc Drain current – continuous ID 30 mAdc Total power dissipation @ TA = 25°C Derate above 25°C 3N209 3N210 PD 300 1.71 350 2.80 mW mW/°C Storage channel temperature range Tstg -65 to 200 -65 to 175 °C Tchannel 200 150 °C Operating channel temperature Lead temperature, 1/16” from seated surface for 10 s 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min Typ Max 25 - - 7.0 - 22 7.0 - -22 7.0 - 22 -7.0 - -22 -0.1 - -4.0 -0.1 - -4.0 - - 20 - - -20 -10 Unit OFF CHARACTERISTICS Drain source breakdown voltage (ID = 10µAdc, VG1S = -4.0Vdc, VG2S = 4.0Vdc) V(BR)DS Gate 1 – source forward breakdown voltage (IG1 = 10mAdc, VG2S = VDS = 0) V(BR)G1SSF Gate 1 – source reverse breakdown voltage (IG1 = -10mAdc, VG2S = VDS = 0) V(BR)G1SSR Gate 2 – source forward breakdown voltage (IG2 = 10mAdc, VG1S = VDS = 0) V(BR)G2SSF Gate 2 – source reverse breakdown voltage (IG2 = -10mAdc, VG1S = VDS = 0) V(BR)G2SSR Gate 1 – source cutoff voltage (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 50µAdc) VG1S(off) Gate 2 – source cutoff voltage (VDS = 15Vdc, VG1S = 0Vdc, ID = 50µAdc) VG2S(off) Gate 1 – terminal forward current (VG1S = 6.0Vdc, VG2S = VDS = 0) IG1SSF Gate 1 – terminal reverse current (VG1S = -6.0Vdc, VG2S = VDS = 0) (VG1S = -6.0Vdc, VG2S = VDS = 0, TA = 150°C) IG1SSR Vdc Vdc Vdc Vdc Vdc Vdc Vdc nAdc nAdc µAdc Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Gate 2 – terminal forward current (VG2S = 6.0Vdc, VG1S = VDS = 0) IG2SSF Gate 2 – terminal reverse current (VG2S = -6.0Vdc, VG1S = VDS = 0) (VG2S = -6.0vdc, VG1S = VDS = 0, TA = 150°C) IG2SSR Min Typ Max - - 20 - - -20 -10 5.0 - 30 10 13 20 - 4.5 7.0 0.005 0.023 0.030 0.5 2.0 4.0 - 4.5 6.0 10 13 20 7.0 - 17 Unit nAdc nAdc µAdc ON CHARACTERISTICS Gate 1 – zero voltage drain current (VDS = 15Vdc, VG1S = 0, VG2S = 4.0Vdc) IDSS mAdc SMALL SIGNAL CHARACTERISTICS Forward transfer admittance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0kHz) yfs Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz) Ciss Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz) Crss Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 5.0mAdc, f = 1.0MHz) Coss Common source noise figure (VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz) NF Common source power gain (VDS = 15Vdc, VG2S = 4.0Vdc, ID ≥ 10mAdc, f = 500MHz) Gps Bandwidth (VDS = 15Vdc, VG2S = 4.0Vdc; ID = 10mAdc, f = 500MHz) BW mmhos pF pF pF dB dB MHz Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER MECHANICAL CHARACTERISTICS Case: TO-72 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705 High-reliability discrete products and engineering services since 1977 3N209-3N210 DUAL GATE MOSFET VHF AMPLIFIER Rev. 20120705