This product complies with the RoHS Directive (EU 2002/95/EC). DSK9J01 Silicon N-channel Junction FET For low frequency amplification For pyroelectric sensor DSK5J01 in SSMini3 type package Features Package High gate-drain voltage (source open) VGDO Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code SSMini3-F3-B Pin Name 1: Source 2: Drain 3: Gate Packaging Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard) Marking Symbol: B6 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VGDS –55 V Drain current ID 30 mA Gate current IG 10 mA Power dissipation PD 125 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Gate-drain breakdown voltage Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Gate-drain breakdown voltage VGDS IG = –100 mA, VDS = 0 –55 Drain-source cutoff current * IDSS VDS = 10 V, VGS = 0 1.0 Gate-source cutoff current IGSS Gate-source cutoff voltage Forward transfer admittance Typ Max Unit V 6.5 mA VGS = –30 V, VDS = 0 –10 nA VGSC VDS = 10 V, ID = 10 mA –5 V Yfs VDS = 10 V, ID = 5 mA, f = 1 MHz Short-circuit input capacitance (Common source) Ciss Reverse transfer capacitance (Common source) Crss VDS = 10 V, VGS = 0, f = 1 MHz 2.5 7.5 mS 6.0 pF 2.5 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Code P Q Rank P Q IDSS 1.0 to 3.0 2.0 to 6.5 Marking Symbol B6P B6Q Publication date: October 2010 Ver. AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSK9J01 DSK9J01_ ID-VDS DSK9J01_ ID-VGS ID VDS ID VGS 4 8 DSK9J01_ PD-Ta PD Ta 150 Ta = 25°C VGS = 0 V 2 − 0.2 V − 0.4 V 1 125 6 Power dissipation PD (mW) 3 Drain current ID (mA) Drain current ID (mA) VDS = 10 V −30°C 25°C 4 Ta = 85°C 2 − 0.6 V 0 0 4 8 0 −1.5 12 Drain-source voltage VDS (V) Gate-source voltage VGS (V) DSK9J01_Ciss , Crss , Coss -VDS DSK9J01_|Yfs|-ID 10 Crss 6 Coss 4 2 0 0 5 10 15 Drain-source voltage VDS (V) 2 20 Ta = 25°C VDS = 10 V 10 1 10−1 −2 10 10−1 1 Drain current ID (mA) Ver. AED 75 50 25 0 0 40 80 120 Ambient temperature Ta (°C) Yfs ID Ta = 25°C Ciss 0.5 102 Forward transfer admittance |Yfs | (mS) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) Ciss , Crss , Coss VDS 8 0 − 0.5 −1.0 100 10 160 This product complies with the RoHS Directive (EU 2002/95/EC). DSK9J01 SSMini3-F3-B Unit: mm +0.05 1.60 −0.03 +0.05 0.375 ±0.05 0.26 −0.02 (5°) 1.60 ±0.05 0.85 −0.03 +0.05 3 1 2 (0.50) +0.05 0.13 −0.02 (0.50) (0.45) 1.00 ±0.05 0 to 0.10 0.70 −0.03 +0.05 (5°) Ver. AED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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