MTM232270LBF MTM232270LBF Silicon N-channel MOSFET Unit: mm For switching MTM13227 in SMini3 type package Features y Low drain-source ON resistance:RDS(on) typ. = 85 mΩ (VGS = 4.0 V) y Low drive voltage: 2.5 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: ET Packaging 1. Gate 2. Source 3. Drain MTM232270LBF Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) Panasonic JEITA Code ■ Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source Voltage Gate-source Voltage Drain current Drain Current (Pulsed) *1 Total Power Dissipation *2 Channel Temperature Storage Temperature Range Note: SMini3-G1-B SC-70 SOT-323 Internal Connection Symbol Rating Unit VDS VGS ID IDp PD Tch Tstg 20 ±10 2.0 8 500 150 -55 to +150 V V A A mW °C °C *1 Pulse width ≤ 10 μs、Duty cycle ≤ 1% *2 Measuring on ceramic board at 40 mm × 38 mm × 0.1 mm. 3 1 2 Absolute maximum rating PD without heat sink shall be made 150 mW. Pin name 1. Gate 2. Source 3. Drain Publication date: September 2012 Ver. CED 1 MTM232270LBF Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain to Source On-State Resistance *1 *1 Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time *2 Turn-off Time *2 Conditions VDSS IDSS IGSS Vth ID = 1 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VGS = ±8 V, VDS = 0 V ID = 1.0 mA, VDS = 10 V RDS(on)1 ID = 1 A, VGS = 4 V RDS(on)2 ID = 0.5 A, VGS = 2.5 V |Yfs| ID = 1 A, VDS = 10 V, f = 1 kHz Ciss Coss VDS = 10 V, VGS = 0, f = 1 MHz Crss VDD = 10 V, VGS = 0 to 4 V, ton ID = 1 A VDD = 10 V, VGS = −4 to 0 V, toff ID = 1 A Min Typ Max 0.85 85 100 10 ±10 1.3 110 150 20 0.4 Unit V μA μA V mΩ S 3.0 290 26 20 pF 12 ns 60 ns Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 Pulse test : Pulse width ≤ 10 μs、Duty cycle ≤ 1 % *2 See test circuit Ver. CED 2 MTM232270LBF VDD = 10 V *2 Test circuit ID = 1 A RL = 10 Ω Vin Vout 4V PW = 10 μs D.C. ≦ 1 % 0V D G Vin 50 Ω S 90 % Vin 10 % 90 % Vout 10 % t(on) t(off) Ver. CED 3 MTM232270LBF 2 Drain current ID (A) 4.0 V Drain current ID (A) データシート用 0.15 2.5 V 1.5 2.0 V 1 VGS = 1.5 V 0.5 Ta = 85 ℃ 0.1 25 ℃ 0.05 -30 ℃ 0 0 0 0.1 0.2 0 0.3 1 Drain-source Voltage VDS (V) ID - VDS ID - VGS 1000 Drain source On-state Resistance RDS(on) (mΩ) Drain-source Voltage VDS (V) 0.5 0.4 0.3 ID = 1.0 A 0.2 0.5 A 0.1 0.25 A 0 0 1 2 3 4 5 2.5 V 100 VGS = 4.0 V 10 0.1 6 1 Drain current ID (A) Gate-source Voltage VGS (V) VDS - VGS RDS(on) - ID 5 1000 Gate-source Voltage VGS (V) 10000 Capacitance C (pF) 2 Gate-source Voltage VGS (V) Ciss 100 Coss 10 Crss 4 VDD = 10 V 3 2 1 0 1 0.1 1 10 0 100 1 2 3 4 Total Gate Charge Qg (nC) Drain-source Voltage VDS (V) Capiacitance - VDS Dynamic Input/Output Characteristics Ver. CED 4 200 1.5 Drain-source On-state Resistance RDS(on) (mΩ) Gate-source Threshold Voltage Vth (V) MTM232270LBF 1 0.5 0 2.5 V 150 100 VGS = 4.0 V 50 0 -50 0 50 100 150 -50 0 50 Temperature Ta (°C) 100 150 200 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 0.8 Mounted on ceramic board (40 x 38 x 0.1 mm) 0.6 0.4 Non-heat sink 0.2 0 0 50 100 150 Temperature Ta (°C) PD - Ta 100 Drain current ID (A) Thermal Resistance Rth (°C/W) 1000 100 10 IDp = 8 A 1 1 ms 0.1 0.01 10 ms Operation in this area is limited by RDS(on) 100 ms Ta = 25 °C, Glass epoxy board (25.4×25.4×t0.8mm) coated with copper foil, 1s DC which has more than 300mm 2. 0.001 0.01 10 0.1 1 10 100 1000 0.1 1 10 100 Drain-source Voltage VDS (V) Pulse Width tsw (s) Rth -tsw Safe Operating Area Ver. CED 5 MTM232270LBF SMini3-G1-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. CED 6 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for general applications (such as office equipment, communications equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book. Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with your using the products described in this book for any special application, unless our company agrees to your using the products in this book for any special application. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. 20100202