This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview Package FG654301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. Code SMini6-F3-B Pin Name 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = –4.0 V) High-speed switching Small size surface mounting package: SMini6-F3-B Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Marking Symbol: V7 Internal Connection (D1) 6 Packaging Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard) FET1 FET2 Overall (S2) 4 FET2 Symbol Rating Unit Drain-source surrender voltage VDSS 30 V Gate-source surrender voltage VGSS ±12 V Drain current ID 100 mA Peak drain current IDP 200 mA Drain-source surrender voltage VDSS –30 V Gate-source surrender voltage VGSS ±12 V Drain current ID –100 mA Peak drain current IDP –200 mA Total power dissipation PT 150 mW Channel temperature Tch 150 °C Storage temperature Tstg -55 to +150 °C Publication date: January 2011 (G2) 5 FET1 Absolute Maximum Ratings Ta = 25°C Parameter 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) Ver. AED 1 (S1) 2 (G1) 3 (D2) 1 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Electrical Characteristics Ta = 25°C±3°C FET1 Parameter Symbol Conditions Min Typ Max Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = 30 V, VGS = 0 1.0 mA Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA Gate threshold voltage VTH ID = 1.0 mA, VDS = 3.0 V 1.0 1.5 V ID = 10 mA, VGS = 2.5 V 3 6 ID = 10 mA, VGS = 4.0 V 2 3 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs 30 Unit V 0.5 ID = 10 mA, VDS = 3.0 V 20 W 55 mS 12 pF 7 pF 3 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA 100 ns Turn-off time * toff VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA 100 ns VDS = 3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = 3 V ID = 10 mA RL = 300 Ω VGS = 0 V to 3 V VIN D G VOUT 90% VIN 10% VOUT 50 Ω 10% 90% S ton toff FET2 Parameter Symbol Conditions Min Typ Max Unit Drain-source surrender voltage VDSS ID = -1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = -30 V, VGS = 0 -1.0 mA Gate-source cutoff current IGSS VGS = ±10 V, VDS = 0 ±10 mA Gate threshold voltage VTH ID = -1.0 mA, VDS = -3.0 V -1.0 -1.5 V ID = -10 mA, VGS = -2.5 V 7 17 ID = -10 mA, VGS = -4.0 V 4 7 Drain-source ON resistance RDS(on) Forward transfer admittance Yfs V -30 - 0.5 ID = -10 mA, VDS = -3.0 V 20 W 40 mS 12 pF 7 pF 3 pF Short-circuit input capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss Reverse transfer capacitance (Common source) Crss Turn-on time * ton VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA 100 ns Turn-off time * toff VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA 100 ns VDS = -3 V, VGS = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Test circuit VDD = −3 V 10% ID = −10 mA VIN RL = 300 Ω 90% VOUT D VGS = 0 V to −3 V G 90% VIN VOUT 10% 50 Ω S 2 td(on) tr Ver. AED td(off) tf This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 Common characteristics chart FG654301_ PT-Ta PT Ta Total power dissipation PT (mW) 200 150 125 100 75 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of FET1I -V FG654301(FET1)_ D DS ID VDS 2.5 V VGS = 4.0 V 60 2.1 V 40 0 VDS = 3 V 1 Ta = 85°C 25°C 10−1 −30°C 10−2 20 1.5 V 0 0.1 0.2 0.3 RDS(on) VGS 102 10 Drain current ID (mA) Drain current ID (mA) 80 102 Ta = 25°C FG654301(FET1)_ RDS(on)-VGS ID VGS Drain-source ON resistance RDS(on) (Ω) 100 FG654301(FET1)_ ID-VGS 1.8 V 0.4 0.5 10−3 0 0.5 1.0 1.5 2.0 Gate-source voltage VGS (V) Drain-source voltage VDS (V) 2.5 Ta = 25°C ID = 0.01 A 10 1 10−1 0 2 4 6 8 10 Gate-source voltage VGS (V) FG654301(FET1)_ RDS(on)-ID Drain-source ON resistance RDS(on) (Ω) 102 RDS(on) ID Ta = 25°C 10 VGS = 2.5 V 4.0 V 1 10−1 10−1 1 10 102 Drain current ID (mA) Ver. AED 3 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 FG654301(FET1)_|Yfs|-ID Ciss , Crss , Coss VDS 25 Yfs ID 1 Ta = 25°C Ta = 25°C VDS = 3 V Forward transfer admittance |Yfs | (S) 20 10−1 15 Ciss 10 Coss Crss 5 0 10−2 0 5 10 15 10−3 20 1 Drain-source voltage VDS (V) Characteristics charts of FET2I -V FG654301(FET2)_ D DS ID VDS −100 Drain current ID (mA) Drain current ID (mA) −10 −2.5 V Ta = 85°C −1 25°C −10−1 −20 −1.5 V − 0.2 − 0.3 − 0.4 − 0.5 Drain-source voltage VDS (V) −30°C −10−2 −10−3 0 − 0.5 −1.0 RDS(on) ID Drain-source ON resistance RDS(on) (Ω) Ta = 25°C 10 VGS = −2.5 V −4.0 V 1 10−1 −10−1 −1 −10 −102 Drain current ID (mA) 4 −1.5 Gate-source voltage VGS (V) FG654301(FET2)_ RDS(on)-ID 102 RDS(on) VGS 103 VDS = −3 V −40 − 0.1 FG654301(FET2)_ RDS(on)-VGS −102 VGS = −4.5 V 0 103 ID VGS −60 0 102 FG654301(FET2)_ ID-VGS Ta = 25°C −80 10 Drain current ID (mA) Drain-source ON resistance RDS(on) (Ω) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) FG654301(FET1)_Ciss , Crss , Coss -VDS Ver. AED −2.0 Ta = 25°C ID = − 0.01 A 102 10 1 0 −2 −4 −6 −8 Gate-source voltage VGS (V) −10 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 FG654301(FET2)_|Yfs|-ID Ciss , Crss , Coss VDS 25 Yfs ID 1 Ta = 25°C Forward transfer admittance |Yfs | (S) Short-circuit input capacitance (Common source) Ciss , Reverse transfer capacitance (Common source) Crss , Short-circuit output capacitance (Common source) Coss (pF) FG654301(FET2)_Ciss , Crss , Coss -VDS 20 Ta = 25°C VDS = −3 V 10−1 15 Ciss 10 10−2 Coss 5 0 Crss 0 −5 −10 −15 Drain-source voltage VDS (V) −20 10−3 −1 −10 −1 −10 −102 Drain current ID (mA) Ver. AED 5 This product complies with the RoHS Directive (EU 2002/95/EC). FG654301 SMini6-F3-B Unit: mm 2.0 ±0.1 1.3 ±0.1 (0.65) 4 1 2 3 7° (0.425) 5 1.25 ±0.10 6 2.1 ±0.1 (0.65) 0.20 ±0.05 +0.05 0.13 −0.02 0 to 0.10 6 Ver. AED (0.15) 0.7 ±0.1 7° Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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