PANASONIC FG654301

This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
Silicon N-channel MOS FET (FET1)
Silicon P-channel MOS FET (FET2)
For switching circuits
 Overview
 Package
FG654301 is N-P channel dual type small signal MOS FET employed small
size surface mounting package.

Code
SMini6-F3-B

Pin Name
1: Source (FET1)
2: Gate (FET1)
3: Drain (FET2)
 Features
 Low drain-source ON resistance:
RDS(on) typ. = 2 W (VGS = 4.0 V) / 4 W (VGS = –4.0 V)
 High-speed switching
 Small size surface mounting package: SMini6-F3-B
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Marking Symbol: V7
 Internal Connection
(D1)
6
 Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
FET1
FET2
Overall
(S2)
4
FET2
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
30
V
Gate-source surrender voltage
VGSS
±12
V
Drain current
ID
100
mA
Peak drain current
IDP
200
mA
Drain-source surrender voltage
VDSS
–30
V
Gate-source surrender voltage
VGSS
±12
V
Drain current
ID
–100
mA
Peak drain current
IDP
–200
mA
Total power dissipation
PT
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55 to +150
°C
Publication date: January 2011
(G2)
5
FET1
 Absolute Maximum Ratings Ta = 25°C
Parameter
4: Source (FET2)
5: Gate (FET2)
6: Drain (FET1)
Ver. AED
1
(S1)
2
(G1)
3
(D2)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
 Electrical Characteristics Ta = 25°C±3°C
 FET1
Parameter
Symbol
Conditions
Min
Typ
Max
Drain-source surrender voltage
VDSS
ID = 1 mA, VGS = 0
Drain-source cutoff current
IDSS
VDS = 30 V, VGS = 0
1.0
mA
Gate-source cutoff current
IGSS
VGS = ±10 V, VDS = 0
±10
mA
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 3.0 V
1.0
1.5
V
ID = 10 mA, VGS = 2.5 V
3
6
ID = 10 mA, VGS = 4.0 V
2
3
Drain-source ON resistance
RDS(on)
Forward transfer admittance
Yfs
30
Unit
V
0.5
ID = 10 mA, VDS = 3.0 V
20
W
55
mS
12
pF
7
pF
3
pF
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
Coss
Reverse transfer capacitance (Common source)
Crss
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V, ID = 10 mA
100
ns
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V, ID = 10 mA
100
ns
VDS = 3 V, VGS = 0, f = 1 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VDD = 3 V
ID = 10 mA
RL = 300 Ω
VGS = 0 V to 3 V
VIN
D
G
VOUT
90%
VIN
10%
VOUT
50 Ω
10%
90%
S
ton
toff
 FET2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Drain-source surrender voltage
VDSS
ID = -1 mA, VGS = 0
Drain-source cutoff current
IDSS
VDS = -30 V, VGS = 0
-1.0
mA
Gate-source cutoff current
IGSS
VGS = ±10 V, VDS = 0
±10
mA
Gate threshold voltage
VTH
ID = -1.0 mA, VDS = -3.0 V
-1.0
-1.5
V
ID = -10 mA, VGS = -2.5 V
7
17
ID = -10 mA, VGS = -4.0 V
4
7
Drain-source ON resistance
RDS(on)
Forward transfer admittance
Yfs
V
-30
- 0.5
ID = -10 mA, VDS = -3.0 V
20
W
40
mS
12
pF
7
pF
3
pF
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
Coss
Reverse transfer capacitance (Common source)
Crss
Turn-on time *
ton
VDD = -3 V, VGS = 0 V to -3 V, ID = -10 mA
100
ns
Turn-off time *
toff
VDD = -3 V, VGS = -3 V to 0 V, ID = -10 mA
100
ns
VDS = -3 V, VGS = 0, f = 1 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VDD = −3 V
10%
ID = −10 mA
VIN
RL = 300 Ω
90%
VOUT
D
VGS = 0 V to −3 V G
90%
VIN
VOUT
10%
50 Ω
S
2
td(on) tr
Ver. AED
td(off) tf
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
Common characteristics chart
FG654301_ PT-Ta
PT  Ta
Total power dissipation PT (mW)
200
150
125
100
75
50
0
0
40
80
120
160
Ambient temperature Ta (°C)
Characteristics
charts of FET1I -V
FG654301(FET1)_
D DS
ID  VDS
2.5 V
VGS = 4.0 V
60
2.1 V
40
0
VDS = 3 V
1
Ta = 85°C
25°C
10−1
−30°C
10−2
20
1.5 V
0
0.1
0.2
0.3
RDS(on)  VGS
102
10
Drain current ID (mA)
Drain current ID (mA)
80
102
Ta = 25°C
FG654301(FET1)_ RDS(on)-VGS
ID  VGS
Drain-source ON resistance RDS(on) (Ω)
100
FG654301(FET1)_ ID-VGS
1.8 V
0.4
0.5
10−3
0
0.5
1.0
1.5
2.0
Gate-source voltage VGS (V)
Drain-source voltage VDS (V)
2.5
Ta = 25°C
ID = 0.01 A
10
1
10−1
0
2
4
6
8
10
Gate-source voltage VGS (V)
FG654301(FET1)_ RDS(on)-ID
Drain-source ON resistance RDS(on) (Ω)
102
RDS(on)  ID
Ta = 25°C
10
VGS = 2.5 V
4.0 V
1
10−1
10−1
1
10
102
Drain current ID (mA)
Ver. AED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
FG654301(FET1)_|Yfs|-ID
Ciss , Crss , Coss  VDS
25
Yfs  ID
1
Ta = 25°C
Ta = 25°C
VDS = 3 V
Forward transfer admittance |Yfs | (S)
20
10−1
15
Ciss
10
Coss
Crss
5
0
10−2
0
5
10
15
10−3
20
1
Drain-source voltage VDS (V)
Characteristics
charts of FET2I -V
FG654301(FET2)_
D DS
ID  VDS
−100
Drain current ID (mA)
Drain current ID (mA)
−10
−2.5 V
Ta = 85°C
−1
25°C
−10−1
−20
−1.5 V
− 0.2
− 0.3
− 0.4
− 0.5
Drain-source voltage VDS (V)
−30°C
−10−2
−10−3
0
− 0.5
−1.0
RDS(on)  ID
Drain-source ON resistance RDS(on) (Ω)
Ta = 25°C
10
VGS = −2.5 V
−4.0 V
1
10−1
−10−1
−1
−10
−102
Drain current ID (mA)
4
−1.5
Gate-source voltage VGS (V)
FG654301(FET2)_ RDS(on)-ID
102
RDS(on)  VGS
103
VDS = −3 V
−40
− 0.1
FG654301(FET2)_ RDS(on)-VGS
−102
VGS = −4.5 V
0
103
ID  VGS
−60
0
102
FG654301(FET2)_ ID-VGS
Ta = 25°C
−80
10
Drain current ID (mA)
Drain-source ON resistance RDS(on) (Ω)
Short-circuit input capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
FG654301(FET1)_Ciss , Crss , Coss -VDS
Ver. AED
−2.0
Ta = 25°C
ID = − 0.01 A
102
10
1
0
−2
−4
−6
−8
Gate-source voltage VGS (V)
−10
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
FG654301(FET2)_|Yfs|-ID
Ciss , Crss , Coss  VDS
25
Yfs  ID
1
Ta = 25°C
Forward transfer admittance |Yfs | (S)
Short-circuit input capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
FG654301(FET2)_Ciss , Crss , Coss -VDS
20
Ta = 25°C
VDS = −3 V
10−1
15
Ciss
10
10−2
Coss
5
0
Crss
0
−5
−10
−15
Drain-source voltage VDS (V)
−20
10−3 −1
−10
−1
−10
−102
Drain current ID (mA)
Ver. AED
5
This product complies with the RoHS Directive (EU 2002/95/EC).
FG654301
SMini6-F3-B
Unit: mm
2.0 ±0.1
1.3 ±0.1
(0.65)
4
1
2
3
7°
(0.425)
5
1.25 ±0.10
6
2.1 ±0.1
(0.65)
0.20 ±0.05
+0.05
0.13 −0.02
0 to 0.10
6
Ver. AED
(0.15)
0.7 ±0.1
7°
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semiconductors described in this book
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