PANASONIC FK330301

This product complies with the RoHS Directive (EU 2002/95/EC).
FK330301
Silicon N-channel MOS FET
For switching circuits
 Overview
 Package
FK330301 is N-channel small signal MOS FET employed small size surface
mounting package.

Code
SSSMini3-F2-B

Pin Name
1: Gate
2: Source
3: Drain
 Features
 Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V)
 Small size surface mounting package: SSSMini3-F2-B
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Marking Symbo: X1
 Packaging
 Internal Connection
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
(D)
3
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
30
V
Gate-source surrender voltage
VGSS
±12
V
Drain current
ID
100
mA
Peak drain current
IDP
200
mA
Power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Publication date: January 2011
Ver. DED
1
(G)
2
(S)
1
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330301
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Drain-source surrender voltage
VDSS
ID = 1.0 mA, VGS = 0
Drain-source cutoff current
IDSS
VDS = 30 V, VGS = 0
1.0
mA
Gate-source cutoff current
IGSS
VGS = ±10 V, VDS = 0
±10
mA
Gate threshold voltage
VTH
ID = 1.0 mA, VDS = 3.0 V
1.0
1.5
V
ID = 10 mA, VGS = 2.5 V
3
6
W
ID = 10 mA, VGS = 4.0 V
2
3
W
Drain-source ON resistance
RDS(on)
Forward transfer admittance
Yfs
30
Unit
V
0.5
ID = 10 mA, VDS = 3.0 V
20
55
mS
12
pF
7
pF
3
pF
Short-circuit input capacitance (Common source)
Ciss
Short-circuit output capacitance (Common source)
Coss
Reverse transfer capacitance (Common source)
Crss
Turn-on time *
ton
VDD = 3 V, VGS = 0 V to 3 V,
RL = 300 W
100
ns
Turn-off time *
toff
VDD = 3 V, VGS = 3 V to 0 V,
RL = 300 W
100
ns
VDS = 3 V, VGS = 0, f = 1 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Test circuit
VDD = 3 V
ID = 10 mA
RL = 300 Ω
VGS = 0 V to 3 V
VIN
G
D
VOUT
90%
10%
VOUT
50 Ω
S
2
VIN
ton
Ver. DED
10%
90%
toff
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330301
FK330301_ ID-VGS
FK330301_ ID-VDS
ID  VDS
102
Ta = 25°C
VGS = 4.0 V
Drain current ID (mA)
Drain current ID (mA)
2.5 V
2.1 V
40
0
0.1
0.2
0.3
Ta = 85°C
1
25°C
10−1
−30°C
10−2
1.5 V
0
VDS = 3 V
10
60
20
1.8 V
0.4
10−3
0.5
0
FK330301_ RDS(on)-ID
1.5
2.0
2.5
1
10−1
0
4.0 V
1
1
10
80
60
40
10
Ta = 25°C
Glass epoxy board
(25.4 mm× 25.4 mm × t0.8 mm) coated with
copper foil, which has more than 300 mm2.
102
Limited by
RDS(on) = 3 Ω (max)
(VGS = 4.0 V)
10 ms
1s
100 ms
DC
10
20
0
102
0
40
80
120
Drain current ID (mA)
Ambient temperature Ta (°C)
FK330301_Ciss , Crss , Coss -VDS
FK330301_|Yfs|-ID
Ciss , Crss , Coss  VDS
25
8
IDP = 0.2 A
Drain current ID (mA)
VGS = 2.5 V
6
Safe operation area
103
100
10
4
Area of safe operation for the FK330301
120
Ta = 25°C
10−1
10−1
2
Gate-source voltage VGS (V)
PD  Ta
Power dissipation PD (mW)
Drain-source ON resistance RDS(on) (Ω)
1.0
10
FK330301_ PD-Ta
RDS(on)  ID
160
1
10−2
10−1
1
10
102
Drain-source voltage VDS (V)
Yfs  ID
1
Ta = 25°C
Ta = 25°C
VDS = 3 V
Forward transfer admittance |Yfs | (S)
Short-circuit input capacitance (Common source) Ciss ,
Reverse transfer capacitance (Common source) Crss ,
Short-circuit output capacitance (Common source) Coss (pF)
0.5
Ta = 25°C
ID = 0.1 A
Gate-source voltage VGS (V)
Drain-source voltage VDS (V)
102
RDS(on)  VGS
102
Drain-source ON resistance RDS(on) (Ω)
100
80
FK330301_ RDS(on)-VGS
ID  VGS
20
10−1
15
Ciss
10
10−2
Coss
5
0
Crss
0
5
10
15
Drain-source voltage VDS (V)
20
10−3
1
10
102
103
Drain current ID (mA)
Ver. DED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
FK330301
SSSMini3-F2-B
Unit: mm
0.20 ±0.05
1.20 ±0.05
+0.05
0.30 −0.02
(5°)
0.80 ±0.05
1.20 ±0.05
3
2
1
+0.05
0.20 −0.02
(0.4)
+0.05
0.13 −0.02
(0.4)
(0.27)
0.80 ±0.05
0 to 0.05
0.52 ±0.03
(5°)
4
Ver. DED
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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