Schottky Barrier Diodes (SBD) MA4X726 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 1 0.4 − 0.05 0.5 0.95 4 2 + 0.1 3 V Peak forward current Single Average forward current Single Non-repetitive peak Single 0.4 ± 0.2 VRRM 30 V IFM 300 mA Double*1 + 0.1 0.1 to 0.3 0 to 0.1 Repetitive peak reverse voltage 0.16 − 0.06 Unit 30 1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin) 225 200 IF(AV) Double*1 mA Marking Symbol: M1O 150 IFSM 1 forward surge current*2 Double*1 0.6 − 0 0.2 Rating VR 0.8 Symbol 1.1 − 0.1 Parameter + 0.2 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) + 0.1 0.95 + 0.2 2.9 − 0.05 • Two MA3X721s are contained in one package (two diodes in a different direction) • Allowing to rectify under (IF(AV) = 200 mA) condition • High reliability 1.9 ± 0.2 0.5 R ■ Features Internal Connection A 0.75 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 4 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 50 µA Reverse current (DC) IR VR = 30 V Forward voltage (DC) VF IF = 200 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 30 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns 0.55 V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Applicaiton Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA4X726 Schottky Barrier Diodes (SBD) IF V F IR VR VF Ta 103 105 0.5 100°C 25°C 0.4 Forward voltage VF (V) Forward current IF (mA) − 20°C 10 1 10−1 10−2 IF = 200 mA 0.3 100 mA 0.2 0 −40 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Forward voltage VF (V) 40 80 120 160 200 IR T a 30 25 20 15 10 104 VR = 30 V 103 5V 1V 102 10 5 0 0 5 10 15 20 25 Reverse voltage VR (V) 2 30 1 −40 25°C 0 40 80 120 160 Ambient temperature Ta (°C) 0 5 10 15 20 25 Reverse voltage VR (V) 105 Reverse current IR (µA) Terminal capacitance Ct (pF) 35 102 1 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 100°C 10 mA Ct VR 40 103 10 0.1 0 Ta = 150°C 104 Reverse current IR (µA) Ta = 150°C 102 200 30