PANASONIC MA2ZD14

Schottky Barrier Diodes (SBD)
MA2ZD14
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
A
0.625
0.3
0.5 ± 0.1
• S-mini type 2-pin package
• Low forward rise voltage VF (VF < 0.4 V)
1
2
+ 0.1
Symbol
Rating
Unit
Reverse voltage (DC)
VR
20
V
Repetitive peak reverse voltage
VRRM
20
V
Average forward current
IF(AV)
100
mA
Peak forward current
IFM
300
mA
Non-repetitive peak forward
surge current*
IFSM
1
A
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.7 ± 0.1
Parameter
0.16 − 0.06
■ Absolute Maximum Ratings Ta = 25°C
1.25 ± 0.1
K
■ Features
0.4 ± 0.1
1.7 ± 0.1
0.4 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2N
Internal Connection
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 10 V
20
µA
Forward voltage (DC)
VF1
IF = 5 mA
0.27
V
VF2
IF = 100 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
25
0.40
pF
V
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA2ZD14
Schottky Barrier Diodes (SBD)
IF  V F
10−1
10−2
Reverse current IR (A)
Forward current IF (A)
Ta = 125°C
10−2
75°C
10−3
25°C
− 20°C
10−4
0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
2
Ta = 125°C
10−3
75°C
10−4
10−5
10−5
10−6
IR  V R
10−1
1
0.6
10−6
25°C
0
5
10
15
20
25
Reverse voltage VR (V)
30