Schottky Barrier Diodes (SBD) MA2ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits A 0.625 0.3 0.5 ± 0.1 • S-mini type 2-pin package • Low forward rise voltage VF (VF < 0.4 V) 1 2 + 0.1 Symbol Rating Unit Reverse voltage (DC) VR 20 V Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 100 mA Peak forward current IFM 300 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0.7 ± 0.1 Parameter 0.16 − 0.06 ■ Absolute Maximum Ratings Ta = 25°C 1.25 ± 0.1 K ■ Features 0.4 ± 0.1 1.7 ± 0.1 0.4 ± 0.1 2.5 ± 0.2 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2N Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 10 V 20 µA Forward voltage (DC) VF1 IF = 5 mA 0.27 V VF2 IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 0.40 pF V Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3.0 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2ZD14 Schottky Barrier Diodes (SBD) IF V F 10−1 10−2 Reverse current IR (A) Forward current IF (A) Ta = 125°C 10−2 75°C 10−3 25°C − 20°C 10−4 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 2 Ta = 125°C 10−3 75°C 10−4 10−5 10−5 10−6 IR V R 10−1 1 0.6 10−6 25°C 0 5 10 15 20 25 Reverse voltage VR (V) 30