Schottky Barrier Diodes (SBD) MA2Z785 Silicon epitaxial planar type Unit : mm • S-mini type 2-pin package, allowing high-density mounting • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency • Reverse voltage VR (DC value) = 50 V guaranteed 0.3 0.5 ± 0.1 ■ Features A 0.625 K 1 0.7 ± 0.1 + 0.1 0.16 − 0.06 2 0.4 ± 0.1 1.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current 1.25 ± 0.1 For super-high speed switching circuit For small current rectification 0.4 ± 0.1 2.5 ± 0.2 Symbol Rating Unit VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current* IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2E Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit 30 µA 0.55 V Reverse current (DC) IR VR = 50 V Forward voltage (DC) VF IF = 100 mA Terminal capacitance Ct VR = 0 V, f = 1 MHz 25 pF Reverse recovery time* trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 3 ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2Z785 Schottky Barrier Diodes (SBD) IF V F VF Ta 103 IR VR 104 0.8 Ta = 125°C 0.7 Ta = 125°C 75°C 25°C 10 − 20°C 1 10−1 0.6 0.5 IF = 100 mA 0.4 0.3 0.2 0 0.1 0.2 0.3 0.4 0.5 0 −40 0.6 Forward voltage VF (V) 10−1 0 IR T a 40 80 120 160 200 Ct VR VR = 50 V Reverse current IR (µA) Terminal capacitance Ct (pF) 30 V 5V 102 10 1 10−1 −40 2 50 40 30 20 10 0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 10 20 30 40 50 Reverse voltage VR (V) 0 10 20 30 40 50 Reverse voltage VR (V) 60 103 25°C 10 3 mA Ambient temperature Ta (°C) 104 75°C 102 1 10 mA 0.1 10−2 Reverse current IR (µA) 103 Forward voltage VF (V) Forward current IF (mA) 102 60 60