DATASHEET

High Voltage Synchronous Rectified Buck MOSFET
Drivers
ISL6208, ISL6208B
Features
The ISL6208 and ISL6208B are high frequency, dual MOSFET
drivers, optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. They are
especially suited for mobile computing applications that
require high efficiency and excellent thermal performance.
These drivers, combined with an Intersil multiphase Buck
PWM controller, form a complete single-stage core-voltage
regulator solution for advanced mobile microprocessors.
• Dual MOSFET drives for synchronous rectified bridge
ISL6208 and ISL6208B have the same function but different
packages. The descriptions in this datasheet are based on
ISL6208 and also apply to ISL6208B.
The ISL6208 features 4A typical sinking current for the lower
gate driver. This current is capable of holding the lower
MOSFET gate off during the rising edge of the Phase node. This
prevents shoot-through power loss caused by the high dv/dt of
phase voltages. The operating voltage matches the 30V
breakdown voltage of the MOSFETs commonly used in mobile
computer power supplies.
The ISL6208 also features a three-state PWM input that,
working together with Intersil’s multiphase PWM controllers,
will prevent negative voltage output during CPU shutdown. This
feature eliminates a protective Schottky diode usually seen in
a microprocessor power systems.
• Adaptive shoot-through protection
• 0.5 On-resistance and 4A sink current capability
• Supports high switching frequency up to 2MHz
- Fast output rise and fall time
- Low propagation delay
• Three-state PWM input for power stage shutdown
• Internal bootstrap schottky diode
• Low bias supply current (5V, 80µA)
• Diode emulation for enhanced light load efficiency and prebiased start-up applications
• VCC POR (power-on-reset) feature integrated
• Low three-state shutdown holdoff time (typical 160ns)
• Pin-to-pin compatible with ISL6207
• QFN and DFN package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad flat no leads - package outline
DFN - Dual flat no leads - package outline
- Near chip scale package footprint, which improves PCB
efficiency and has a thinner profile
MOSFET gates can be efficiently switched up to 2MHz using
the ISL6208. Each driver is capable of driving a 3000pF load
with propagation delays of 8ns and transition times under
10ns. Bootstrapping is implemented with an internal Schottky
diode. This reduces system cost and complexity, while allowing
the use of higher performance MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
• Pb-free (RoHS compliant)
A diode emulation feature is integrated in the ISL6208 to
enhance converter efficiency at light load conditions. This
feature also allows for monotonic start-up into pre-biased
outputs. When diode emulation is enabled, the driver will allow
discontinuous conduction mode by detecting when the
inductor current reaches zero and subsequently turning off the
low side MOSFET gate.
• High input voltage DC/DC converters
Applications
• Core voltage supplies for Intel® and AMD® mobile
microprocessors
• High frequency low profile DC/DC converters
• High current low output voltage DC/DC converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for MLFP Packages”
• Technical Brief TB447 “Guidelines for Preventing
Boot-to-Phase Stress on Half-Bridge MOSFET Driver ICs”
July 14, 2014
FN9115.7
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2004-2008, 2011, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL6208, ISL6208B
Ordering Information
PART NUMBER
(Notes 3, 4)
PART
MARKING
TEMP. RANGE
(°C)
PACKAGE
(Pb-free)
PKG.
DWG. #
ISL6208CBZ (Note 1)
ISL62 08CBZ
-10 to +100
8 Ld SOIC
M8.15
ISL6208CRZ (Note 1)
208Z
-10 to +100
8 Ld 3x3 QFN
L8.3x3
ISL6208BCRZ-T (Note 2)
8BC
-10 to +100
8 Ld 2x2 DFN
L8.2x2D
ISL6208IBZ (Note 1)
ISL62 08IBZ
-40 to +100
8 Ld SOIC
M8.15
ISL6208IRZ (Note 1)
8IRZ
-40 to +100
8 Ld 3x3 QFN
L8.3x3
ISL6208BIRZ-T (Note 2)
8BI
-40 to +100
8 Ld 2x2 DFN
L8.2x2D
NOTES:
1. Add “-T*” suffix for tape and reel. Please refer to TB347 for details on reel specifications.
2. Please refer to TB347 for details on reel specifications.
3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100% matte tin
plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
4. For Moisture Sensitivity Level (MSL), please see device information page for ISL6208, ISL6208B. For more information on MSL please see techbrief
TB363.
Pin Configurations
ISL6208BCRZ, ISL6208BIRZ
(8 LD 2x2 DFN)
TOP VIEW
ISL6208CRZ, ISL6208IRZ
(8 LD 3x3 QFN)
TOP VIEW
UGATE
1
8
PHASE
UGATE
PHASE
ISL6208CBZ, ISL6208IBZ
(8 LD SOIC)
TOP VIEW
BOOT
2
7
FCCM
8
7
PWM
3
6
VCC
GND
4
5
LGATE
66 FCCM
BOOT 1
PWM 2
3
4
GND
LGATE
5 VCC
UGATE 1
86 PHASE
BOOT 2
7 FCCM
PWM 3
66 VCC
GND 4
5 LGATE
Block Diagram
VCC
BOOT
FCCM
UGATE
PHASE
SHOOTTHROUGH
PROTECTION
CONTROL
LOGIC
PWM
VCC
LGATE
10k
GND
THERMAL PAD (FOR QFN AND DFN PACKAGE ONLY)
FIGURE 1. BLOCK DIAGRAM
ti
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ISL6208, ISL6208B
ti
Absolute Maximum Ratings
Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (VFCCM, VPWM) . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
BOOT Voltage (VBOOT-GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 33V
BOOT To PHASE Voltage (VBOOT-PHASE). . . . . . . . . . . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 30V
GND - 10V (<20ns Pulse Width, 10µJ)
UGATE Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . VPHASE - 0.3V (DC) to VBOOT
VPHASE - 5V (<20ns Pulse Width, 10µJ) to VBOOT
LGATE Voltage . . . . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-40°C to +125°C
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
8 Ld SOIC Package (Notes 6, 9) . . . . . . . . .
110
67
8 Ld 3x3 QFN Package (Notes 7, 8) . . . . . .
80
15
8 Ld 2x2 DFN Package (Notes 7, 8) . . . . . .
89
24
Maximum Storage Temperature Range . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . . . . .-10°C to +100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . . +125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
6. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
7. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
8. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
9. For JC, the “case temp” location is taken at the package top center.
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply across the operating
temperature range.
MIN
(Note 11)
TYP
-
80
-
µA
VCC Rising
-
3.40
3.90
V
VCC Falling
2.40
2.90
-
V
Hysteresis
-
500
-
mV
0.50
0.55
0.65
V
VPWM = 5V
-
250
-
µA
VPWM = 0V
-
-250
-
µA
PWM Three-State Rising Threshold
VVCC = 5V
0.70
1.00
1.30
V
PWM Three-State Falling Threshold
VVCC = 5V
3.5
3.8
4.1
V
VVCC = 5V, temperature = +25°C
100
175
250
ns
FCCM LOW Threshold
0.50
-
-
V
FCCM HIGH Threshold
-
-
2.0
V
PARAMETER
SYMBOL
TEST CONDITIONS
MAX
(Note 11) UNITS
VCC SUPPLY CURRENT
Bias Supply Current
IVCC
PWM pin floating, VFCCM = 5V
POR
BOOTSTRAP DIODE
Forward Voltage
VF
VVCC = 5V, forward bias current = 2mA
PWM INPUT
Input Current
IPWM
Three-State Shutdown Hold-off Time
tTSSHD
FCCM INPUT
SWITCHING TIME
UGATE Rise Time (Note 10)
tRU
VVCC = 5V, 3nF load
-
8.0
-
ns
LGATE Rise Time (Note 10)
tRL
VVCC = 5V, 3nF load
-
8.0
-
ns
UGATE Fall Time (Note 10)
tFU
VVCC = 5V, 3nF load
-
8.0
-
ns
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July 14, 2014
ISL6208, ISL6208B
Electrical Specifications
Recommended Operating Conditions, Unless Otherwise Noted. Boldface limits apply across the operating
temperature range.
PARAMETER
MIN
(Note 11)
TYP
VVCC = 5V, 3nF load
-
4.0
-
ns
SYMBOL
LGATE Fall Time (Note 10)
tFL
TEST CONDITIONS
MAX
(Note 11) UNITS
UGATE Turn-Off Propagation Delay
tPDLU
VVCC = 5V, outputs unloaded
-
18
-
ns
LGATE Turn-Off Propagation Delay
tPDLL
VVCC = 5V, outputs unloaded
-
25
-
ns
UGATE Turn-On Propagation Delay
tPDHU
VVCC = 5V, outputs unloaded
10
20
30
ns
LGATE Turn-On Propagation Delay
tPDHL
VVCC = 5V, outputs unloaded
10
20
30
ns
tPTS
VVCC = 5V, outputs unloaded
-
35
-
ns
-
400
-
ns
UG/LG Three-State Propagation Delay
Minimum LG ON-TIME in DCM (Note 10)
tLGMIN
OUTPUT
Upper Drive Source Resistance
RU
500mA source current
-
1
2.5

Upper Driver Source Current (Note 10)
IU
VUGATE-PHASE = 2.5V
-
2.00
-
A
Upper Drive Sink Resistance
RU
500mA sink current
-
1
2.5

Upper Driver Sink Current (Note 10)
IU
VUGATE-PHASE = 2.5V
-
2.00
-
A
Lower Drive Source Resistance
RL
500mA source current
-
1
2.5

Lower Driver Source Current (Note 10)
IL
VLGATE = 2.5V
-
2.00
-
A
Lower Drive Sink Resistance
RL
500mA sink current
-
0.5
1.0

Lower Driver Sink Current (Note 10)
IL
VLGATE = 2.5V
-
4.00
-
A
NOTES:
10. Limits established by characterization and are not production tested.
11. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
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ISL6208, ISL6208B
Typical Application with 2-Phase Converter
+5V
VBAT
+5V
+5V
VCC
FB
+VCORE
BOOT
COMP
UGATE
FCCM
VCC
VSEN
PWM1
PWM
PHASE
DRIVE
ISL6208
PWM2
PGOOD
THERMAL
PAD
FCCM
MAIN
CONTROL
LGATE
ISEN1
VID
ISEN2
+5V
VBAT
VCC
BOOT
FS
DACOUT
GND
FCCM
PWM
UGATE
DRIVE
ISL6208
PHASE
THERMAL LGATE
PAD
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FN9115.7
July 14, 2014
ISL6208, ISL6208B
Timing Diagram
2.5V
PWM
tPDHU
tPDLU
tRU
tTSSHD
tRU
tFU
tFU
tPTS
1V
UGATE
LGATE
tPTS
1V
tRL
tFL
tTSSHD
tPDHL
tPDLL
tFL
Functional Pin Description
PHASE
UGATE
Connect the PHASE pin to the source of the upper MOSFET and
the drain of the lower MOSFET. This pin provides a return path
for the upper gate driver.
The UGATE pin is the upper gate drive output. Connect to the
gate of high-side power N-Channel MOSFET.
BOOT
BOOT is the floating bootstrap supply pin for the upper gate
drive. Connect the bootstrap capacitor between this pin and
the PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. See “Internal Bootstrap Diode” on
page 8 for guidance in choosing the appropriate capacitor
value.
PWM
The PWM signal is the control input for the driver. The PWM signal
can enter three distinct states during operation. See “Three-State
PWM Input” on page 8 for further details. Connect this pin to the
PWM output of the controller.
GND
GND is the ground pin for the IC.
LGATE
LGATE is the lower gate drive output. Connect to gate of the
low-side power N-Channel MOSFET.
VCC
Connect the VCC pin to a +5V bias supply. Place a high quality
bypass capacitor from this pin to GND.
FCCM
The FCCM pin enables or disables Diode Emulation. When
FCCM is LOW, diode emulation is allowed. Otherwise,
continuous conduction mode is forced. See “Diode Emulation”
on page 8 for more detail.
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Description
Theory of Operation
Designed for speed, the ISL6208 dual MOSFET driver controls
both high-side and low-side N-Channel FETs from one
externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower
MOSFET (see “Timing Diagram”). After a short propagation
delay [tPDLL], the lower gate begins to fall. Typical fall times
[tFL] are provided in the “Electrical Specifications” on page 3.
Adaptive shoot-through circuitry monitors the LGATE voltage.
When LGATE has fallen below 1V, UGATE is allowed to turn ON.
This prevents both the lower and upper MOSFETs from
conducting simultaneously, or shoot-through.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [tPDLU] is encountered before the upper gate
begins to fall [tFU]. The upper MOSFET gate-to-source voltage is
monitored, and the lower gate is allowed to rise after the upper
MOSFET gate-to-source voltage drops below 1V. The lower gate
then rises [tRL], turning on the lower MOSFET.
This driver is optimized for converters with large step-down
compared to the upper MOSFET because the lower MOSFET
conducts for a much longer time in a switching period. The
lower gate driver is therefore sized much larger to meet this
application requirement.
The 0.5 ON-resistance and 4A sink current capability enable
the lower gate driver to absorb the current injected to the lower
gate through the drain-to-gate capacitor of the lower MOSFET
and prevent a shoot-through caused by the high dv/dt of the
phase node.
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Typical Performance Waveforms
FIGURE 2. LOAD TRANSIENT (0 - 30A, 3-PHASE)
FIGURE 3. LOAD TRANSIENT (30 - 0A, 3-PHASE)
FIGURE 4. DCM TO CCM TRANSITION AT NO LOAD
FIGURE 5. CCM TO DCM TRANSITION AT NO LOAD
FIGURE 6. PRE-BIASED START-UP IN CCM MODE
FIGURE 7. PRE-BIASED START-UP IN DCM MODE
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ISL6208, ISL6208B
Three-State PWM Input
1.6
1.4
1.2
1.0
0.8
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection to
prevent upper and lower MOSFETs from conducting
simultaneously and shorting the input supply. This is
accomplished by ensuring the falling gate has turned off one
MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is
monitored until it reaches a 1V threshold, at which time the
UGATE is released to rise. Adaptive shoot-through circuitry
monitors the upper MOSFET gate-to-source voltage during UGATE
turn-off. Once the upper MOSFET gate-to-source voltage has
dropped below a threshold of 1V, the LGATE is allowed to rise.
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode.
Simply adding an external capacitor across the BOOT and
PHASE pins completes the bootstrap circuit.
The bootstrap capacitor must have a maximum voltage rating
above the maximum battery voltage plus 5V. The bootstrap
capacitor can be chosen from Equation 1:
QGATE = 100nC
0.6
0.4
0.2
A unique feature of the ISL6208 and other Intersil drivers is the
addition of a shutdown window to the PWM input. If the PWM
signal enters and remains within the shutdown window for a set
holdoff time, the output drivers are disabled and both MOSFET
gates are pulled and held low. The shutdown state is removed
when the PWM signal moves outside the shutdown window.
Otherwise, the PWM rising and falling thresholds outlined in the
“Electrical Specifications” table on page 3 determine when the
lower and upper gates are enabled.
Q GATE
C BOOT  -----------------------V BOOT
2.0
1.8
nC
50
Diode emulation allows for higher converter efficiency under
light load situations. With diode emulation active, the ISL6208
will detect the zero current crossing of the output inductor and
turn off LGATE. This ensures that discontinuous conduction
mode (DCM) is achieved. Diode emulation is asynchronous to
the PWM signal. Therefore, the ISL6208 will respond to the
FCCM input immediately after it changes state. Refer
to“Typical Performance Waveforms” on page 7.
Note: Intersil does not recommend Diode Emulation use with
rDS(ON) current sensing topologies. The turn-OFF of the low
side MOSFET can cause gross current measurement
inaccuracies.
larger standard value capacitance is 0.15µF. A good quality
ceramic capacitor is recommended.
CBOOT_CAP (µF)
Diode Emulation
20nC
0.0
0.0
0.1
0.2
0.3
0.4 0.5 0.6 0.7
VBOOT_CAP (V)
0.8
0.9
1.0
FIGURE 8. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE VOLTAGE
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency and total gate charge of the selected
MOSFETs. Calculating the power dissipation in the driver for a
desired application is critical to ensuring safe operation.
Exceeding the maximum allowable power dissipation level will
push the IC beyond the maximum recommended operating
junction temperature of +125°C. The maximum allowable IC
power dissipation for the SO-8 package is approximately
800mW. When designing the driver into an application, it is
recommended that the following calculation be performed to
ensure safe operation at the desired frequency for the selected
MOSFETs. The power dissipated by the driver is approximated
as shown in Equation 2:
P = f sw  1.5V U Q + V L Q  + I VCC V
U
L
CC
(EQ. 2)
where fsw is the switching frequency of the PWM signal. VU
and VL represent the upper and lower gate rail voltage. QU and
QL is the upper and lower gate charge determined by MOSFET
selection and any external capacitance added to the gate pins.
The lVCC VCC product is the quiescent power of the driver and
(EQ. 1)
where QGATE is the amount of gate charge required to fully
charge the gate of the upper MOSFET. The VBOOT term is
defined as the allowable droop in the rail of the upper drive.
As an example, suppose an upper MOSFET has a gate charge,
QGATE , of 25nC at 5V and also assume the droop in the drive
voltage over a PWM cycle is 200mV. One will find that a
bootstrap capacitance of at least 0.125µF is required. The next
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FN9115.7
July 14, 2014
ISL6208, ISL6208B
is typically negligible.
1000
QU =100nC
QL = 200nC
900
A good layout would help reduce the ringing on the phase and
gate nodes significantly:
QU = 50nC
QL = 100nC
QU = 50nC
QL = 50nC
800
POWER (mW)
700
600
QU = 20nC
QL =50nC
500
400
• All power traces (UGATE, PHASE, LGATE, GND, VCC) should be
short and wide, and avoid using vias. If vias must be used, two
or more vias per layer transition is recommended.
• Keep the SOURCE of the upper FET as close as thermally
possible to the DRAIN of the lower FET.
300
200
• Keep the connection in between the SOURCE of lower FET and
power ground wide and short.
100
0
• Avoid using vias for decoupling components where possible,
especially in the BOOT-to-PHASE path. Little or no use of vias
for VCC and GND is also recommended. Decoupling loops
should be short.
0
200
400
600
800 1000 1200 1400 1600 1800 2000
FREQUENCY (kHz)
FIGURE 9. POWER DISSIPATION vs FREQUENCY
Layout Considerations
Reducing Phase Ring
The parasitic inductances of the PCB and power devices (both upper
and lower FETs) could cause increased PHASE ringing, which may
lead to voltages that exceed the absolute maximum rating of the
devices. When PHASE rings below ground, the negative voltage
could add charge to the bootstrap capacitor through the internal
bootstrap diode. Under worst-case conditions, the added charge
could overstress the BOOT and/or PHASE pins. To prevent this from
happening, the user should perform a careful layout inspection to
reduce trace inductances, and select low lead inductance MOSFETs
and drivers. D2PAK and DPAK packaged MOSFETs have high
parasitic lead inductances, as opposed to SO-8. If higher inductance
MOSFETs must be used, a Schottky diode is recommended across
the lower MOSFET to clamp negative PHASE ring.
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• Input capacitors should be placed as close to the DRAIN of the
upper FET and the SOURCE of the lower FET as thermally
possible.
Note: Refer to Intersil Tech Brief TB447 for more information.
Thermal Management
For maximum thermal performance in high current, high
switching frequency applications, connecting the thermal pad of
the QFN and DFN parts to the power ground with multiple vias, or
placing a low noise copper plane underneath the SOIC part is
recommended. This heat spreading allows the part to achieve its
full thermal potential.
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Revision History
The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to web to make sure you
have the latest revision.
DATE
REVISION
CHANGE
July 14, 2014
FN9115.7
Updated Phase voltage under “Absolute Maximum Ratings” on page 3 from “GND - 8V (<20ns Pulse Width,
10µJ)” to “GND - 10V (<20ns Pulse Width, 10µJ)”
Updated “Package Outline Drawing” on page 13 (M8.15) to the latest revision.
Updated Products verbiage to About Intersil verbiage on page 10.
January 17, 2012
FN9115.6
Added limits for “UGATE Turn-On Propagation Delay” and “LGATE Turn-On Propagation Delay” on page 4.
October 26, 2011
FN9115.5
Removed limits for “UGATE Turn-On Propagation Delay” and “LGATE Turn-On Propagation Delay” on page 4.
July 12, 2011
FN9115.4
Added “Revision History” on page 10 and “Products” on page 10.
Added ISL6208BCRZ and ISL6208BIRZ parts to “Ordering Information” on page 2. Removed leaded, obsolete
devices (ISL6208CB, ISL6208CR, ISL6208IB, ISL6208IR).
Updated Tape & Reel note in “Ordering Information” on page 2 from "Add "-T" suffix for tape and reel." to new
standard "Add "-T*" suffix for tape and reel." The "*" covers all possible tape and reel options
Added MSL note to “Ordering Information” on page 2
Added Pinout for ISL6208BIRZ and ISL6208BCRZ on page 2
Added “Thermal Information” on page 3 for new ISL6802B package, 8 Ld 2x2 DFN. Added Theta JC for SOIC
package and Note 9.
Removed "Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested." from common conditions of
spec table. Added as Note in MIN MAX columns of “Electrical Specifications” table.
Added standard text "Boldface limits apply over the operating temp range" to common conditions of spec table.
Bolded applicable specs.
Updated “Package Outline Drawing” on page 13 (M8.15) as follows:
Updated to new POD format by removing table and moving dimensions onto drawing and adding land pattern
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10
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Package Outline Drawing
L8.3x3
8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
Rev 2, 3/07
3.00
4X 0.65
A
B
6
PIN #1 INDEX AREA
8
7
6
PIN 1
INDEX AREA
1
5
2
3.00
6
(4X)
1 .10 ± 0 . 15
0.15
4
3
0.10 M C A B
4 8X 0.28 ± 0.05
TOP VIEW
8X 0.60 ± 0.15
BOTTOM VIEW
SEE DETAIL "X"
0.10 C
C
0 . 90 ± 0.1
( 4X 0 . 65 )
( 2. 60 TYP )
BASE PLANE
SEATING PLANE
0.08 C
(
1. 10 )
SIDE VIEW
( 8X 0 . 28 )
C
0 . 2 REF
5
0 . 00 MIN.
0 . 05 MAX.
( 8X 0 . 80)
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
NOTES:
1. Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3. Unless otherwise specified, tolerance : Decimal ± 0.05
4. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
5. Tiebar shown (if present) is a non-functional feature.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 indentifier may be
either a mold or mark feature.
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11
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Package Outline Drawing
L8.2x2D
8 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE (DFN) WITH EXPOSED PAD
Rev 0, 3/11
2.00
6
PIN 1
INDEX AREA
6
PIN #1
INDEX AREA
A
B
8
1
2.00
6x 0.50
(4X)
1.55±0.10
0.15
0.10M C A B 0.22
4
TOP VIEW
( 8x0.30 )
0.90±0.10
BOTTOM VIEW
SEE DETAIL "X"
C
0.10 C
0.90±0.10
BASE PLANE
0 . 00 MIN.
0 . 05 MAX.
SEATING PLANE
0.08 C
SIDE VIEW
0 . 2 REF
C
DETAIL "X"
( 8x0.20 )
PACKAGE
OUTLINE
( 8x0.30 )
NOTES:
1.
Dimensions are in millimeters.
Dimensions in ( ) for Reference Only.
2.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
3.
Unless otherwise specified, tolerance: Decimal ± 0.05
4.
Dimension applies to the metallized terminal and is measured
( 6x0.50 )
1.55
2.00
between 0.15mm and 0.30mm from the terminal tip.
( 8x0.22 )
0.90
2.00
TYPICAL RECOMMENDED LAND PATTERN
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12
5.
Tiebar shown (if present) is a non-functional feature.
6.
The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
FN9115.7
July 14, 2014
ISL6208, ISL6208B
Package Outline Drawing
M8.15
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 4, 1/12
DETAIL "A"
1.27 (0.050)
0.40 (0.016)
INDEX
6.20 (0.244)
5.80 (0.228)
AREA
0.50 (0.20)
x 45°
0.25 (0.01)
4.00 (0.157)
3.80 (0.150)
1
2
8°
0°
3
0.25 (0.010)
0.19 (0.008)
SIDE VIEW “B”
TOP VIEW
2.20 (0.087)
SEATING PLANE
5.00 (0.197)
4.80 (0.189)
1.75 (0.069)
1.35 (0.053)
1
8
2
7
0.60 (0.023)
1.27 (0.050)
3
6
4
5
-C-
1.27 (0.050)
0.51(0.020)
0.33(0.013)
SIDE VIEW “A
0.25(0.010)
0.10(0.004)
5.20(0.205)
TYPICAL RECOMMENDED LAND PATTERN
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1994.
2. Package length does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
3. Package width does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
4. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
5. Terminal numbers are shown for reference only.
6. The lead width as measured 0.36mm (0.014 inch) or greater above the
seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch).
7. Controlling dimension: MILLIMETER. Converted inch dimensions are not
necessarily exact.
8. This outline conforms to JEDEC publication MS-012-AA ISSUE C.
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13
FN9115.7
July 14, 2014