BCM846BS NPN/NPN matched double transistor 26 June 2015 Product data sheet 1. General description NPN/NPN matched double transistor in a very small SOT363 (TSSOP6) SurfaceMounted Device (SMD) plastic package. The transistors are fully isolated internally. 2. Features and benefits • • • • Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors AEC-Q101 qualified 3. Applications • • Current mirror Differential amplifier 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 65 V IC collector current - - 100 mA 200 290 450 [1] 0.9 1 - [2] - - 2 Per transistor Per transistor hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C hFE1/hFE2 hFE matching VCE = 5 V; IC = 2 mA; Tamb = 25 °C VBE1−VBE2 VBE matching Per device [1] [2] The smaller of the two values is taken as numerator. The smaller of the two values is subtracted from the larger value. Scan or click this QR code to view the latest information for this product mV BCM846BS NXP Semiconductors NPN/NPN matched double transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter TR1 2 B base TR1 3 C collector TR2 4 E emitter TR2 5 B base TR2 6 C collector TR1 Simplified outline 6 5 Graphic symbol 4 6 5 TR2 TR1 1 2 4 3 TSSOP6 (SOT363) 1 2 3 sym020 6. Ordering information Table 3. Ordering information Type number BCM846BS Package Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] BCM846BS F2% [1] BCM846BS Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 80 V VCEO collector-emitter voltage open base - 65 V VEBO emitter-base voltage open collector - 6 V IC collector current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 200 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW Ptot total power dissipation Tamb ≤ 25 °C [1] - 300 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Per transistor Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 625 K/W [1] - - 416 K/W Per transistor Rth(j-a) Per device Rth(j-a) [1] BCM846BS Product data sheet Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 15 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 5 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 °C 200 290 450 VCE = 5 V; IC = 10 µA; Tamb = 25 °C - 250 - IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - 50 200 mV IC = 100 mA; IB = 5 mA; pulsed; - 200 400 mV [1] - 910 - mV [1] - 760 - mV Per transistor ICBO VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C VBE base-emitter voltage VCE = 5 V; IC = 10 mA; Tamb = 25 °C [2] - - 770 mV VBE base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 °C [2] 610 660 710 mV CC collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; - - 1.5 pF - 11 - pF 100 250 - MHz - 3.3 - dB - 2.8 - dB [3] 0.9 1 - [4] - - 2 f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C NF VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; noise figure f = 1 kHz; B = 200 Hz; Tamb = 25 °C VCE = 5 V; IC = 0.2 mA; RS = 2 kΩ; Tamb = 25 °C; f = 10 Hz to 15.7 kHz Per device hFE1/hFE2 hFE matching VBE1−VBE2 VBE matching [1] [2] [3] [4] BCM846BS Product data sheet VCE = 5 V; IC = 2 mA; Tamb = 25 °C mV VBEsat decreases by about 1.7 mV/K with increasing temperature. VBE decreases by about 2 mV/K with increasing temperature. The smaller of the two values is taken as numerator. The smaller of the two values is subtracted from the larger value. All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 006aaa533 600 0.20 IC (A) hFE 0.16 400 006aaa532 IB (mA) = 4.50 4.05 3.60 3.15 2.70 2.25 1.80 1.35 (1) 0.12 0.90 (2) 0.08 200 0.45 (3) 0.04 0 10- 2 10- 1 1 10 0 102 103 IC (mA) VCE = 5 V 2 4 6 8 VCE (V) 10 Tamb = 25 °C (1) Tamb = 100 °C Fig. 2. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 1. 0 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values 006aaa536 1 006aaa534 1.3 VBEsat (V) 1.1 VBE (V) 0.8 0.9 (1) (2) 0.7 (3) 0.6 0.5 0.3 0.4 10- 1 Fig. 3. 1 10 102 IC (mA) 0.1 10- 1 103 1 VCE = 5 V; Tamb = 25 °C IC/IB = 20 Base-emitter voltage as a function of collector current; typical values (1) Tamb = −55 °C Product data sheet 102 IC (mA) 103 (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 4. BCM846BS 10 Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 006aaa535 10 006aaa537 103 VCEsat (V) fT (MHz) 1 102 10- 1 (1) (2) (3) 10- 2 10- 1 1 102 10 IC (mA) 10 103 IC/IB = 20 Fig. 6. (2) Tamb = 25 °C (3) Tamb = −55 °C 102 Transition frequency as a function of collector current; typical values 006aaa538 4 3 11 2 9 1 7 0 2 4 6 8 VCB (V) 006aaa539 15 Ce (pF) 13 0 Fig. 7. IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values 5 Cc (pF) 10 VCE = 5 V; Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. 1 5 10 0 2 4 VEB (V) 6 f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C Collector capacitance as a function of collector- Fig. 8. base voltage; typical values Emitter capacitance as a function of emitterbase voltage; typical values BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 11. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.65 1.3 0.3 0.2 0.25 0.10 Dimensions in mm Fig. 9. 14-10-03 Package outline TSSOP6 (SOT363) 12. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig. 10. Reflow soldering footprint for TSSOP6 (SOT363) BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 11. Wave soldering footprint for TSSOP6 (SOT363) BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BCM846BS v.2 20150626 Product data sheet - BCM846BS v.1 Modification: • BCM846BS v.1 20150424 - - BCM846BS Product data sheet Product status changed Objective data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. 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BCM846BS Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 12 BCM846BS NXP Semiconductors NPN/NPN matched double transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 4 11 Package outline ..................................................... 7 12 Soldering ................................................................ 7 13 Revision history ..................................................... 9 14 14.1 14.2 14.3 14.4 Legal information .................................................10 Data sheet status ............................................... 10 Definitions ...........................................................10 Disclaimers .........................................................10 Trademarks ........................................................ 11 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 June 2015 BCM846BS Product data sheet All information provided in this document is subject to legal disclaimers. 26 June 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 12