CMOS linear image sensors S11106-10 S11107-10 Compact size and high cost-performance The S11106-10 and S11107-10 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10 MHz and low current consumption. The pixel size is 63.5 × 63.5 μm (S11106-10), 127 × 127 μm (S11107-10). Features Applications Compact size and high cost-performance Position detection Resin sealing type, surface mount package: 2.4 × 9.1 ×1.6t mm Object measurement Pixel size: S11106-10: 63.5 × 63.5 μm, 128 pixels S11107-10: 127 × 127 μm, 64 pixels Image reading Rotary encoder High-speed data rate: 10 MHz max. 3 V or 5 V single power supply operation Built-in timing generator allows operation with only Start and Clock pulse inputs Low current consumption Allows simultaneous charge integration Structure Parameter Number of pixels Pixel pitch Pixel height Photosensitive area length Package Seal material S11106-10 128 63.5 63.5 S11107-10 64 127 127 8.06 Glass epoxy Silicone resin Unit μm μm mm - Absolute maximum ratings Parameter Supply voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Reflow soldering conditions*2 Symbol Vdd V(CLK) V(ST) Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -40 to +85 -40 to +85 Peak temperature 260 °C, 3 times (See p.11) Unit V V V °C °C - *1: No dew condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 2a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to the product within the absolute maximum ratings. www.hamamatsu.com 1 CMOS linear image sensors S11106-10, S11107-10 Recommended terminal voltage (Ta=25 °C) Parameter Supply voltage Clock pulse voltage Start pulse voltage High level Low level High level Low level Symbol Vdd Min. 3.0 3.0 0 3.0 0 V(CLK) V(ST) Typ. Vdd Vdd - Max. 5.25 Vdd + 0.25 0.4 Vdd + 0.25 0.4 Unit V V V V V Electrical characterisitics (Ta=25 °C) Parameter Clock pulse frequency Video data rate Output impedance Current consumption*3 Symbol f(CLK) VR Zo Vdd=3 V Vdd=5 V I S11106-10 Typ. f(CLK) Max. 10 M - 60 - 140 4.0 7.0 6.0 9.0 8.0 11.0 Min. 5k - S11107-10 Typ. f(CLK) Max. 10 M - 60 - 140 2.5 4.5 4.5 6.5 6.5 8.5 Min. 5k - Unit Hz Hz Ω mA *3: f(CLK)=10 MHz, dark state, V(CLK)=V(ST)=Vdd Electrical and optical characteristics [Ta=25 °C, Vdd=3 V/5 V, V(CLK)=V(ST)=Vdd, f(CLK)=10 MHz] Parameter Spectral response range Peak sensitivity wavelength Photosensitivity*4 Conversion efficiency*5 Output offset voltage Dark output voltage*6 Vdd=3 V Saturation output voltage*7 Vdd=5 V Vdd=3 V Readout noise*8 Vdd=5 V Vdd=3 V Dynamic range 1*9 Vdd=5 V Vdd=3 V Dynamic range 2*10 Vdd=5 V Photoresponse nonuniformity*4 *11 Symbol λ λp S CE Vo Vd Vsat Nr DR1 DR2 PRNU Min. S11106-10 Typ. S11107-10 Typ. Max. Min. 700 75 0.35 0.8 1.1 0.04 2.0 4.0 0.9 0.6 2200 6600 50000 100000 ±2 0.4 2.2 4.3 1.5 1.1 ±10 400 to 1000 Max. 400 to 1000 0.5 700 80 0.75 0.8 1.1 0.5 1.8 3.7 - 0.02 2.0 4.0 1.0 0.7 2000 5700 100000 200000 ±2 0.2 2.2 4.3 1.5 1.2 ±10 1.8 3.7 - Unit nm nm V/(lx · s) μV/eV mV V mV rms times times % *4: Measured with a 2856 K tungsten lamp *5: Output voltage generated per one electron *6: Integration time=10 ms *7: Voltage difference from Vo *8: Dark state *9: DR1 = Vsat/Nr *10: DR2 = Vsat/Vd *11: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 112 pixels (S11106-10) excluding 8 pixels each at both ends or 56 pixels (S11107-10) excluding 4 pixels each at both ends, and is defined as follows: PRNU = ∆X/X × 100 [%] X: the average output of all pixels, ∆X: difference between X and maximum or minimum output Appearance inspection standards Parameter Foreign matter on photosensitive area Test criterion 10 μm max. Inspection method Automated camera 2 CMOS linear image sensors S11106-10, S11107-10 Spectral response (typical example) (Ta=25 °C) Relative sensitivity (%) 100 80 60 40 20 0 400 600 800 1000 1200 Wavelength (nm) KMPDB0347EA Block diagram CLK ST 1 8 Vss 2 3 Vdd 7 6 Bias generator Timing generator Shift register 4 EOS Hold circuit 5 Video Charge amp array 1 2 Photodiode array N-1 N KMPDC0333EB 3 CMOS linear image sensors S11106-10, S11107-10 Output waveform of one pixel The timing for acquiring the Video signal is synchronized with the rising edge of CLK (See red arrow below). S11106-10 Vdd=3 V [f(CLK)=VR=10 MHz] CLK 5 V/div. GND 2.8 V (saturation output voltage=2.0 V) Video 0.8 V (output offset voltage) 1 V/div. GND 20 ns/div. Vdd=5 V [f(CLK)=VR=10 MHz] CLK 5 V/div. GND 4.8 V (saturation output voltage=4.0 V) Video 0.8 V (output offset voltage) 1 V/div. GND 20 ns/div. 4 CMOS linear image sensors S11106-10, S11107-10 S11107-10 Vdd=3 V [f(CLK)=VR=10 MHz] CLK 5 V/div. GND 2.8 V (saturation output voltage=2.0 V) Video 0.8 V (output offset voltage) 1 V/div. GND 20 ns/div. Vdd=5 V [f(CLK)=VR=10 MHz] CLK 5 V/div. GND 4.8 V (saturation output voltage=4.0 V) Video 1 V/div. 0.8 V (output offset voltage) GND 20 ns/div. 5 CMOS linear image sensors S11106-10, S11107-10 Timing chart 1/f(CLK) 14 15 16 17 18 19 20 21 Trig 1 2 3 4 CLK Integration time ST thp(ST) tlp(ST) tpi(ST) 128 (S11106-10) 64 (S11107-10) 128 (S11106-10) 64 (S11107-10) 1 Video 19 clocks EOS tr(CLK) tf(CLK) CLK CLK 1/f(CLK) Video ST tvd2 tr(ST) tvd1 tf(ST) thp(ST) tlp(ST) tpi(ST) KMPDC0515EB Parameter Start pulse interval Start pulse high period Start pulse low period Start pulse rise and fall times Clock pulse duty ratio Clock pulse rise and fall times Vdd=3 V Video delay time 1*12 Vdd=5 V Vdd=3 V Video delay time 2*12 Vdd=5 V Symbol Min. 36/f(CLK) tpi(ST) 4/f(CLK) thp(ST) 32/f(CLK) tlp(ST) 0 tr(ST), tf(ST) 45 0 tr(CLK), tf(CLK) tvd1 tvd2 - S11106-10 Typ. 10 50 10 60 35 35 30 Max. 15 55 15 - Min. 36/f(CLK) 4/f(CLK) 32/f(CLK) 0 45 0 - S11107-10 Typ. 10 50 10 60 35 35 30 Max. 15 55 15 - Unit s s s ns % ns ns ns *12: Ta=25 °C, CLK=10 MHz, V(CLK)=V(ST)=Vdd Note: Dark output increases if the start pulse period or the start pulse high period is lengthened. The internal timing generator starts operation at the rising edge of CLK immediately after ST goes low. The rising edge of this CLK is regarded as “1”. The integration time equals the high period of ST plus 14 CLK cycles and minus 100 ns. When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the next shift register operation will start. The integration time can be changed by changing the ratio of the high and low periods of ST. 6 CMOS linear image sensors S11106-10, S11107-10 Operation example S11106-10 When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 128 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 148/f(CLK) = 148/10 MHz = 14.8 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 148/f(CLK) - 32/f(CLK) = 148/10 MHz - 32/10 MHz = 11.6 μs Integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 11.6 + 1.4 - 0.1 = 12.9 μs. tlp(ST)=3.2 μs thp(ST)=11.6 μs ST tpi(ST)=14.8 μs KMPDC0388EB S11107-10 When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 64 channels) Clock pulse frequency = Video data rate = 10 MHz Start pulse cycle = 84/f(CLK) = 84/10 MHz = 8.4 μs High period of start pulse = Start pulse cycle - Start pulse’s low period min. = 84/f(CLK) - 32/f(CLK) = 84/10 MHz - 32/10 MHz = 5.2 μs Integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 5.2 + 1.4 - 0.1 = 6.5 μs. thp(ST)=5.2 μs tlp(ST)=3.2 μs ST tpi(ST)=8.4 μs KMPDC0389EB 7 CMOS linear image sensors S11106-10, S11107-10 Dimensional outline (unit: mm) Photosensitive area A 9.1 2.4 4.55 ± 0.2 B [Top view] 1 ch C Direction of scan Photosensitive surface Silicon resin [Side view] 1.44 1.9 0.72 3.4 1.6 ± 0.2 1.9 0.9 ± 0.11 0.3 ± 0.15 1.3 ± 0.15 Glass epoxy Tolerance unless otherwise noted: ±0.2 [Bottom view] 1.7 Index mark Electrode (8 ×) ɸ0.5 Type no. A S11106-10 8.06 × 0.0635 S11107-10 8.06 × 0.127 B 0.4 0.5 C 128 ch 64 ch KMPDA0314EB Pin connections Pin no. 1 2 3 4 5 6 7 8 Symbol CLK Vss Vss EOS Video Vdd Vss ST Description Clock pulse Ground Ground End of scan Video signal Supply voltage Ground Start pulse Input/Output Input Output Output Input Input Recommended land pattern 1.44 (8 ×) ɸ0.7 3.4 7.2 KMPDC0390EA 8 CMOS linear image sensors S11106-10, S11107-10 Details of active area (unit: μm) S11106-10 46 59.5 59.5 59.5 59.5 59.5 59.5 2 ch 128 ch 127 ch 126 ch 56.75 63.5 4 4 4 63.5 63.5 63.5 63.5 63.5 4 4 63.5 4 4 48.5 63.5 63.5 82.1 86.8 3 ch 63.5 86.8 1 ch 43 46 82.1 43 4 56.75 48.5 KMPDC0335EB S11107-10 60 3 ch 2 ch 64 ch 63 ch 62 ch 127 1 ch 67 67 67 67 67 67 127 127 127 127 127 127 KMPDC0336EA Application circuit example +5 V +5 V 0.1 μF + +5 V 22 μF/25 V 0.1 μF + 0.1 μF CLK 82 Ω 82 Ω 74HC541 Vss Vss Vss ST CLK 22 μF/25 V EOS Video EOS Vdd ST + 22 μF/25 V +6 V S11106-10, S11107-10 0.1 μF + 74HC541 100 Ω + - 22 μF/25 V LT1818 51 Ω Video 22 pF 0.1 μF + 22 μF/25 V -6 V KMPDC0518EA 9 CMOS linear image sensors S11106-10, S11107-10 Standard packing specifications Reel (conforms to JEITA ET-7200) Dimensions 330 mm Hub diameter 100 mm Tape width 16 mm Material PPE Electrostatic characteristics Conductive Embossed (unit: mm, material: polystyrene, conductive) 1.75 ± 0.1 4.0 ± 0.1 ) 8.0 ± 0.1 9.45 ± 0.1 +0.25 (ɸ1.5-0 0.32 ± 0.05 +0.3 7.5 ± 0.1 2.0 ± 0.1 16.0-0.1 +0.1 ϕ1.5-0 1 ch 1.89 ± 0.1 Reel feed direction 2.75 ± 0.1 KMPDC0451EA Packing quantity 2000 pcs/reel Packing specifications may vary on orders less than 2000 pieces. Packing type Reel and desiccant in moisture-proof packing (vaccum-sealed) 10 CMOS linear image sensors S11106-10, S11107-10 Recommended temperature profile for reflow soldering (typical example) 300 °C Peak temperature 260 °C max. Peak temperature - 5 °C 30 s max. Cooling 6 °C/s max. Heating 3 °C/s max. Temperature 217 °C 200 °C 150 °C Preheating 60 to 120 s Soldering 60 to 150 s Time KMPDB0405EB ∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a humidity of 60% or less, and perform soldering within 4 weeks. ∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance. ∙ When three or more months have passed or if the packing bag has not been stored in an environment described above, perform baking. For the baking method, see the precautons “Resin sealed type CMOS linear image sensors.” Precautions (1) Electrostatic countermeasures · This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools. · Protect this device from surge voltages which might be caused by peripheral equipment. (2) Package handling · The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when designing the optical systems. · Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air. (3) Surface protective tape · Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the tape before use. (4) Operating and storage environments · Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (5) UV exposure · This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. 11 CMOS linear image sensors S11106-10, S11107-10 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Image sensors ∙ Resin-sealed CMOS linear image sensors Information described in this material is current as of June 2016. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1150E03 Jun. 2016 DN 12