s11106-10 etc kmpd1150e

CMOS linear image sensors
S11106-10
S11107-10
Compact size and high cost-performance
The S11106-10 and S11107-10 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10
MHz and low current consumption. The pixel size is 63.5 × 63.5 μm (S11106-10), 127 × 127 μm (S11107-10).
Features
Applications
Compact size and high cost-performance
Position detection
Resin sealing type,
surface mount package: 2.4 × 9.1 ×1.6t mm
Object measurement
Pixel size:
S11106-10: 63.5 × 63.5 μm, 128 pixels
S11107-10: 127 × 127 μm, 64 pixels
Image reading
Rotary encoder
High-speed data rate: 10 MHz max.
3 V or 5 V single power supply operation
Built-in timing generator allows operation with only
Start and Clock pulse inputs
Low current consumption
Allows simultaneous charge integration
Structure
Parameter
Number of pixels
Pixel pitch
Pixel height
Photosensitive area length
Package
Seal material
S11106-10
128
63.5
63.5
S11107-10
64
127
127
8.06
Glass epoxy
Silicone resin
Unit
μm
μm
mm
-
Absolute maximum ratings
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
Operating temperature*1
Storage temperature*1
Reflow soldering conditions*2
Symbol
Vdd
V(CLK)
V(ST)
Topr
Tstg
Tsol
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
-0.3 to +6
-0.3 to +6
-0.3 to +6
-40 to +85
-40 to +85
Peak temperature 260 °C, 3 times (See p.11)
Unit
V
V
V
°C
°C
-
*1: No dew condensation
When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
*2: JEDEC level 2a
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to the product
within the absolute maximum ratings.
www.hamamatsu.com
1
CMOS linear image sensors
S11106-10, S11107-10
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
Clock pulse voltage
Start pulse voltage
High level
Low level
High level
Low level
Symbol
Vdd
Min.
3.0
3.0
0
3.0
0
V(CLK)
V(ST)
Typ.
Vdd
Vdd
-
Max.
5.25
Vdd + 0.25
0.4
Vdd + 0.25
0.4
Unit
V
V
V
V
V
Electrical characterisitics (Ta=25 °C)
Parameter
Clock pulse frequency
Video data rate
Output impedance
Current consumption*3
Symbol
f(CLK)
VR
Zo
Vdd=3 V
Vdd=5 V
I
S11106-10
Typ.
f(CLK)
Max.
10 M
-
60
-
140
4.0
7.0
6.0
9.0
8.0
11.0
Min.
5k
-
S11107-10
Typ.
f(CLK)
Max.
10 M
-
60
-
140
2.5
4.5
4.5
6.5
6.5
8.5
Min.
5k
-
Unit
Hz
Hz
Ω
mA
*3: f(CLK)=10 MHz, dark state, V(CLK)=V(ST)=Vdd
Electrical and optical characteristics [Ta=25 °C, Vdd=3 V/5 V, V(CLK)=V(ST)=Vdd, f(CLK)=10 MHz]
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity*4
Conversion efficiency*5
Output offset voltage
Dark output voltage*6
Vdd=3 V
Saturation output voltage*7
Vdd=5 V
Vdd=3 V
Readout noise*8
Vdd=5 V
Vdd=3
V
Dynamic range 1*9
Vdd=5 V
Vdd=3 V
Dynamic range 2*10
Vdd=5 V
Photoresponse nonuniformity*4 *11
Symbol
λ
λp
S
CE
Vo
Vd
Vsat
Nr
DR1
DR2
PRNU
Min.
S11106-10
Typ.
S11107-10
Typ.
Max.
Min.
700
75
0.35
0.8
1.1
0.04
2.0
4.0
0.9
0.6
2200
6600
50000
100000
±2
0.4
2.2
4.3
1.5
1.1
±10
400 to 1000
Max.
400 to 1000
0.5
700
80
0.75
0.8
1.1
0.5
1.8
3.7
-
0.02
2.0
4.0
1.0
0.7
2000
5700
100000
200000
±2
0.2
2.2
4.3
1.5
1.2
±10
1.8
3.7
-
Unit
nm
nm
V/(lx · s)
μV/eV
mV
V
mV rms
times
times
%
*4: Measured with a 2856 K tungsten lamp
*5: Output voltage generated per one electron
*6: Integration time=10 ms
*7: Voltage difference from Vo
*8: Dark state
*9: DR1 = Vsat/Nr
*10: DR2 = Vsat/Vd
*11: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly
illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 112 pixels (S11106-10) excluding 8
pixels each at both ends or 56 pixels (S11107-10) excluding 4 pixels each at both ends, and is defined as follows:
PRNU = ∆X/X × 100 [%]
X: the average output of all pixels, ∆X: difference between X and maximum or minimum output
Appearance inspection standards
Parameter
Foreign matter on photosensitive area
Test criterion
10 μm max.
Inspection method
Automated camera
2
CMOS linear image sensors
S11106-10, S11107-10
Spectral response (typical example)
(Ta=25 °C)
Relative sensitivity (%)
100
80
60
40
20
0
400
600
800
1000
1200
Wavelength (nm)
KMPDB0347EA
Block diagram
CLK
ST
1
8
Vss
2
3
Vdd
7
6
Bias
generator
Timing generator
Shift register
4 EOS
Hold circuit
5 Video
Charge amp array
1
2
Photodiode array
N-1
N
KMPDC0333EB
3
CMOS linear image sensors
S11106-10, S11107-10
Output waveform of one pixel
The timing for acquiring the Video signal is synchronized with the rising edge of CLK (See red arrow below).
S11106-10
Vdd=3 V
[f(CLK)=VR=10 MHz]
CLK
5 V/div.
GND
2.8 V (saturation output voltage=2.0 V)
Video
0.8 V (output offset voltage)
1 V/div.
GND
20 ns/div.
Vdd=5 V
[f(CLK)=VR=10 MHz]
CLK
5 V/div.
GND
4.8 V (saturation output voltage=4.0 V)
Video
0.8 V (output offset voltage)
1 V/div.
GND
20 ns/div.
4
CMOS linear image sensors
S11106-10, S11107-10
S11107-10
Vdd=3 V
[f(CLK)=VR=10 MHz]
CLK
5 V/div.
GND
2.8 V (saturation output voltage=2.0 V)
Video
0.8 V (output offset voltage)
1 V/div.
GND
20 ns/div.
Vdd=5 V
[f(CLK)=VR=10 MHz]
CLK
5 V/div.
GND
4.8 V (saturation output voltage=4.0 V)
Video
1 V/div.
0.8 V (output offset voltage)
GND
20 ns/div.
5
CMOS linear image sensors
S11106-10, S11107-10
Timing chart
1/f(CLK)
14 15 16 17 18 19 20 21 Trig
1 2 3 4
CLK
Integration time
ST
thp(ST)
tlp(ST)
tpi(ST)
128 (S11106-10)
64 (S11107-10)
128 (S11106-10)
64 (S11107-10)
1
Video
19 clocks
EOS
tr(CLK)
tf(CLK)
CLK
CLK
1/f(CLK)
Video
ST
tvd2
tr(ST)
tvd1
tf(ST)
thp(ST)
tlp(ST)
tpi(ST)
KMPDC0515EB
Parameter
Start pulse interval
Start pulse high period
Start pulse low period
Start pulse rise and fall times
Clock pulse duty ratio
Clock pulse rise and fall times
Vdd=3 V
Video delay time 1*12
Vdd=5 V
Vdd=3 V
Video delay time 2*12
Vdd=5 V
Symbol
Min.
36/f(CLK)
tpi(ST)
4/f(CLK)
thp(ST)
32/f(CLK)
tlp(ST)
0
tr(ST), tf(ST)
45
0
tr(CLK), tf(CLK)
tvd1
tvd2
-
S11106-10
Typ.
10
50
10
60
35
35
30
Max.
15
55
15
-
Min.
36/f(CLK)
4/f(CLK)
32/f(CLK)
0
45
0
-
S11107-10
Typ.
10
50
10
60
35
35
30
Max.
15
55
15
-
Unit
s
s
s
ns
%
ns
ns
ns
*12: Ta=25 °C, CLK=10 MHz, V(CLK)=V(ST)=Vdd
Note: Dark output increases if the start pulse period or the start pulse high period is lengthened.
The internal timing generator starts operation at the rising edge of CLK immediately after ST goes low. The rising edge of this
CLK is regarded as “1”.
The integration time equals the high period of ST plus 14 CLK cycles and minus 100 ns.
When the ST pulse is set to low while the shift register is operating, the operation of the shift register is reset and the next shift
register operation will start.
The integration time can be changed by changing the ratio of the high and low periods of ST.
6
CMOS linear image sensors
S11106-10, S11107-10
Operation example
S11106-10
When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 128 channels)
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 148/f(CLK) = 148/10 MHz = 14.8 μs
High period of start pulse = Start pulse cycle - Start pulse’s low period min.
= 148/f(CLK) - 32/f(CLK) = 148/10 MHz - 32/10 MHz = 11.6 μs
Integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 11.6 + 1.4 - 0.1 = 12.9 μs.
tlp(ST)=3.2 μs
thp(ST)=11.6 μs
ST
tpi(ST)=14.8 μs
KMPDC0388EB
S11107-10
When the clock pulse frequency is maximized (video data rate is also maximized), the time of one scan is minimized, and the integration time is maximized (for outputting signals from all 64 channels)
Clock pulse frequency = Video data rate = 10 MHz
Start pulse cycle = 84/f(CLK) = 84/10 MHz = 8.4 μs
High period of start pulse = Start pulse cycle - Start pulse’s low period min.
= 84/f(CLK) - 32/f(CLK) = 84/10 MHz - 32/10 MHz = 5.2 μs
Integration time is equal to the high period of start pulse + 14 cycles of clock pulses - 100 ns, so it will be 5.2 + 1.4 - 0.1 = 6.5 μs.
thp(ST)=5.2 μs
tlp(ST)=3.2 μs
ST
tpi(ST)=8.4 μs
KMPDC0389EB
7
CMOS linear image sensors
S11106-10, S11107-10
Dimensional outline (unit: mm)
Photosensitive area
A
9.1
2.4
4.55 ± 0.2
B
[Top view]
1 ch
C
Direction of scan
Photosensitive
surface
Silicon resin
[Side view]
1.44
1.9
0.72
3.4
1.6 ± 0.2
1.9
0.9 ± 0.11
0.3 ± 0.15
1.3 ± 0.15
Glass epoxy
Tolerance unless otherwise noted: ±0.2
[Bottom view]
1.7
Index mark
Electrode
(8 ×) ɸ0.5
Type no.
A
S11106-10 8.06 × 0.0635
S11107-10 8.06 × 0.127
B
0.4
0.5
C
128 ch
64 ch
KMPDA0314EB
Pin connections
Pin no.
1
2
3
4
5
6
7
8
Symbol
CLK
Vss
Vss
EOS
Video
Vdd
Vss
ST
Description
Clock pulse
Ground
Ground
End of scan
Video signal
Supply voltage
Ground
Start pulse
Input/Output
Input
Output
Output
Input
Input
Recommended land pattern
1.44
(8 ×) ɸ0.7
3.4
7.2
KMPDC0390EA
8
CMOS linear image sensors
S11106-10, S11107-10
Details of active area (unit: μm)
S11106-10
46
59.5
59.5
59.5
59.5
59.5
59.5
2 ch
128 ch
127 ch
126 ch
56.75
63.5
4
4
4
63.5
63.5
63.5
63.5
63.5
4
4
63.5
4
4
48.5
63.5
63.5
82.1
86.8
3 ch
63.5
86.8
1 ch
43
46
82.1
43
4
56.75
48.5
KMPDC0335EB
S11107-10
60
3 ch
2 ch
64 ch
63 ch
62 ch
127
1 ch
67
67
67
67
67
67
127
127
127
127
127
127
KMPDC0336EA
Application circuit example
+5 V
+5 V
0.1 μF
+
+5 V
22 μF/25 V
0.1 μF
+
0.1 μF
CLK
82 Ω
82 Ω
74HC541
Vss
Vss
Vss
ST
CLK
22 μF/25 V
EOS
Video EOS
Vdd
ST
+
22 μF/25 V
+6 V
S11106-10, S11107-10
0.1 μF
+
74HC541
100 Ω
+
-
22 μF/25 V
LT1818
51 Ω
Video
22 pF
0.1 μF
+
22 μF/25 V
-6 V
KMPDC0518EA
9
CMOS linear image sensors
S11106-10, S11107-10
Standard packing specifications
Reel (conforms to JEITA ET-7200)
Dimensions
330 mm
Hub diameter
100 mm
Tape width
16 mm
Material
PPE
Electrostatic characteristics
Conductive
Embossed (unit: mm, material: polystyrene, conductive)
1.75 ± 0.1
4.0 ± 0.1
)
8.0 ± 0.1
9.45 ± 0.1
+0.25
(ɸ1.5-0
0.32 ± 0.05
+0.3
7.5 ± 0.1
2.0 ± 0.1
16.0-0.1
+0.1
ϕ1.5-0
1 ch
1.89 ± 0.1
Reel feed direction
2.75 ± 0.1
KMPDC0451EA
Packing quantity
2000 pcs/reel
Packing specifications may vary on orders less than 2000 pieces.
Packing type
Reel and desiccant in moisture-proof packing (vaccum-sealed)
10
CMOS linear image sensors
S11106-10, S11107-10
Recommended temperature profile for reflow soldering (typical example)
300 °C
Peak temperature
260 °C max.
Peak temperature - 5 °C
30 s max.
Cooling
6 °C/s max.
Heating
3 °C/s max.
Temperature
217 °C
200 °C
150 °C
Preheating
60 to 120 s
Soldering
60 to 150 s
Time
KMPDB0405EB
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 4 weeks.
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
∙ When three or more months have passed or if the packing bag has not been stored in an environment described above, perform
baking. For the baking method, see the precautons “Resin sealed type CMOS linear image sensors.”
Precautions
(1) Electrostatic countermeasures
· This device has a built-in protection circuit as a safeguard against static electrical charges. However, to prevent destroying the device
with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools.
· Protect this device from surge voltages which might be caused by peripheral equipment.
(2) Package handling
· The photosensitive area of this device is sealed and protected by transparent resin. When compared to a glass faceplate, the surface
of transparent resin may be less uniform and is more likely to be scratched. Be very careful when handling this device and also when
designing the optical systems.
· Dust or grime on the light input window might cause nonuniform sensitivity. To remove dust or grime, blow it off with compressed air.
(3) Surface protective tape
· Protective tape is affixed to the surface of this product to protect the photosensitive area. After assembling the product, remove the
tape before use.
(4) Operating and storage environments
· Handle the device within the temperature range specified in the absolute maximum ratings. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided.
(5) UV exposure
· This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light.
11
CMOS linear image sensors
S11106-10, S11107-10
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Image sensors
∙ Resin-sealed CMOS linear image sensors
Information described in this material is current as of June 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1150E03 Jun. 2016 DN
12