Datasheet - Hamamatsu Photonics

CMOS area image sensors
S11661
S11662
APS (active pixel sensor) type with high near
infrared sensitivity
The S11661 and S11662 are APS type CMOS area image sensors with a high sensitivity in the near infrared region. The
S11661 is SXGA format type (1280 x 1024 pixels), and the S11662 is VGA format type (640 x 480 pixels). Both types include a
timing generator, a bias generator and an A/D converter, and offer digital input/output for easy handling.
Features
Applications
S11661: 1280 × 1024 pixels
S11662: 640 × 480 pixels
Security (infrared camera, palm vein certification)
Position and shape recognition of infrared spot light
Pixel size: 7.4 × 7.4 μm
Rolling/global shutter readout
3.3 V single power supply operation
High-speed partial readout function
Structure
Parameter
Image size (H × V)
Pixel size
Pixel pitch
Number of total pixels (H × V)
Number of effective pixels (H × V)
S11661
9.472 × 7.578
S11662
4.736 × 3.552
7.4 × 7.4
7.4
1320 × 1064
1280 × 1024
680 × 520
640 × 480
Upper and left parts: 8 each
Lower and right parts: 32 each
33
Ceramic
Borosilicate glass (without anti-reflective coating)
Number of light-shielded lines
Fill factor
Package
Window material*1 *2
Unit
mm
μm
μm
pixels
pixels
lines
%
-
*1: Resin sealing
*2: Reflactive index=1.523
Absolute maximum ratings
Parameter
Supply voltage
Input voltage*3
Vcp_out terminal voltage
Operating temperature*4
Storage temperature*4
Reflow soldering conditions*5
Symbol
Vdd(A), Vdd(D)
Vi
Vcp_out
Topr
Tstg
Tsol
Condition
Ta=25 °C
Ta=25 °C
Ta=25 °C
Value
-0.3 to +4.2
-0.3 to +4.2
-0.3 to +6.5
-10 to +65
-10 to +85
Peak temperature 260 °C, 3 times (see P.8)
Unit
V
V
V
°C
°C
-
*3: SPI_data, SPI_clk, SPI_enable, MCLK, Vref1 to 9, Vr, Vcp_in, All_reset, MST, SPI_reset
*4: No condensation
*5: JEDEC level 3 (S11661), JEDEC level 2a (S11662)
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
www.hamamatsu.com
1
CMOS area image sensors
S11661, S11662
Recommended terminal voltage (Ta=25 °C)
Parameter
Supply voltage
I/O supply voltage
Digital input terminal High level
voltage
Low level
Symbol
Vdd(A), Vr
Vdd(D), Vcp_in
Vsigi(H)
Vsigi(L)
Min.
3.0
3.0
Vdd(D) - 0.25
0
Typ.
3.3
Vdd(A)
Vdd(D)
-
Max.
3.6
3.6
Vdd(D) + 0.25
0.4
Unit
V
V
Typ.
1/2 × f(MCLK)
Vdd(D)
0
47
25 (S11661)
19 (S11662)
Max.
25 M
Unit
Hz
Hz
V
Electrical characterisitics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V]
Parameter
Master clock pulse frequency
Video data rate
High level
Digital output voltage
Low level
Analog terminal*7
6
Current consumption*
Digital terminal*8
Symbol
f(MCLK)
VR
Vsigo(H)
Vsigo(L)
I1
Min.
1M
Vdd(D) - 0.25
-
I2
-
0.25
55
45 (S11661)
35 (S11662)
V
mA
*6: Master clock pulse frequency: 25 MHz, frame rate: 8 frames/s (S11661), 30 frames/s (S11662), load capacitance of each output
terminal: 5 pF
*7: Sum of Vdd(A) and Vr terminals
*8: Sum of Vdd(D) and Vcp_in terminals
Electrical and optical characterisitics [Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V, Gain=1 times]
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity*9
Photoresponse nonuniformity*10
Dark output*11 *12
Saturation output voltage
Saturation exposure
Linearity
Image lag
Rolling shutter mode
Random noise*12
Global shutter mode
Rolling shutter mode
Dynamic range
Global shutter mode
White spots
Point defect*13
Black spots
Blemish
Cluster defect*14
Line defect*15
Symbol
λ
λp
Sw
PRNU
Vdark
Vsat
Lsat
LR
Lag
RN(RS)
RN(GS)
DR(RS)
DR(GS)
WS
BS
ClsD
DL
Min.
10
1.4
0.1
59
55
-
Typ.
400 to 1000
760
13
60
1.6
0.12
1000
1500
64
60
-
Max.
4
180
±10
0.1
1500
2250
10
10
0
0
Unit
nm
nm
V/lxăs
%
mV/s
V
lxăs
%
%
μV rms
μV rms
dB
dB
pixels
pixels
pieces
lines
*9: White light 2856 K
*10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the photosensitive area is uniformly illuminated
by white light which is approx. 50% of the saturation level. PRNU is calculated using the pixels excluding the pixels of the 10
outermost lines and defective pixels, and is defined as follows:
PRNU= ∆X/X × 100 (%)
X: average output of all pixels, ∆X: standard deviation of pixel output
*11: Average value of all effective pixels (excluding defective pixels). Rolling shutter mode
*12: Analog video output value
The final output from the image sensor is a 12-bit digital signal. When the gain is set to 1, the conversion voltage range (0 to 2 V)
is A/D converted into 4096 gradation steps. So, 1 DN (digital number) is equal to 0.488 mV (=2000 mV/4096 DN).
*13: White spot=Pixels whose dark output exceeds 1800 mV/s
Black spot=Pixels whose sensitivity is less than 50% of the average sensitivity of adjacent pixels when the image sensor is
illuminated with uniform white light that is approximately 50% of the saturation (excluding the outermost 10 lines in
the effective pixel area)
*14: A defect consisting of two or more contiguous defective pixels
*15: Column defect and row defect
Column defect=A defect consisting of 10 or more contiguous defective pixels in one column
Row defect=A defect consisting of 10 or more contiguous defective pixels in one row
2
CMOS area image sensors
S11661, S11662
Electrical and optical characterisitics [A/D converter, Ta=25 °C, Vdd(A)=Vdd(D)=3.3 V]
Parameter
Resolution
Conversion time
Conversion voltage range*16
Symbol
RESO
tCON
-
Value
12
2/f(MCLK)
0 to 2
Unit
bits
s
V
*16: Gain=1
Spectral response (typical example)
Spectral transmittance characteristics of
window material
(Ta=25 °C)
25
(Typ. Ta=25 °C)
20
80
Transmittance (%)
Photosensitivity [TV/(W∙s)]
100
15
10
60
40
5
20
0
400
500
600
700
800
900
1000 1100 1200
0
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
KMPDB0363EC
Wavelength (nm)
KMPDB0423EA
Contrast transfer function vs. spatial
frequency (typical example)
(White light, Ta=25 °C)
Contrast transfer function
1.0
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
Spatial frequency (line pairs/mm)
KMPDB0424EA
3
CMOS area image sensors
S11661, S11662
Vertical shift register
(S11661: 1064 lines, S11662: 520 lines)
Booster circuit
Block diagram
12
(
Photodiode array
S11661: 1280 × 1024 pixels
S11662: 640 × 480 pixels
)
Dout [11-0]
12-bit
A/D converter
Vsync
Hsync
Pclk
CDS circuit
(S11661: 1320 lines, S11662: 680 lines)
Horizontal shift register
(S11661: 1320 lines, S11662: 680 lines)
Amplifier
Bias circuit
Timing generator
Serial/parallel
interface
SPI_reset
SPI_data
SPI_clk
SPI_enable
MCLK
All_reset
(MST)
KMPDC0409EA
Dimensional outlines (unit: mm)
S11661
+0.30
16.51-0.15
1.05 ± 0.2*1
16.23 ± 0.2
7.2 ± 0.2
34
1.27
23
22
33
22
34
12
44
Index mark
7.578
Scan direction (vertical)
0.9 ± 0.2*
Photosensitive
surface
23
33
12.7 ± 0.13
2
7.9 ± 0.2
Center of
photosensitive area
1 ch
12
44
11
1
9.472
11
1.4 ± 0.14
1
0.635 ± 0.13
1.27 ± 0.13
0.55 ± 0.05
Scan direction (horizontal)
Angle accuracy of effective pixels: ±2.4 °
Weight: 1.4 g
*1: Distance from upper surface of window to photosensitive surface
*2: Distance from package bottom to photosensitive surface
KMPDA0286EB
4
CMOS area image sensors
S11661, S11662
S11662
+0.20
10.67-0.13
1.05 ± 0.2*1
0.9 ± 0.2*
0.7
25
24
36
24
37
13
48
Index mark
3.552
37
Photosensitive
surface
25
36
4.22 ± 0.2
Scan direction (vertical)
10.2 ± 0.1
7.7 ± 0.1
2
5.16 ± 0.2
Center of
photosensitive area
1 ch
13
48
1
12
1
12
4.736
1.4 ± 0.14
0.4 ± 0.05
0.8 ± 0.18
0.55 ± 0.05
Scan direction (horizontal)
Angle accuracy of effective pixels: ±3.15 °
Weight: 0.5 g
*1: Distance from upper surface of window to photosensitive surface
*2: Distance from package bottom to photosensitive surface
KMPDA0287EB
Land pattern examples (unit: mm)
S11662
0.65
0.4
1.27
0.7
2.0
2.27
S11661
7.7
10.67
KMPDC0528EA
12.7
16.24
KMPDC0527EA
5
CMOS area image sensors
S11661, S11662
Pin connections
S11661
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
Symbol
GND
SPI_data
SPI_clk
SPI_enable
MCLK
Vdd(A)
Dout11
Dout10
Dout9
Dout8
Dout7
Vdd(D)
Dout6
Dout5
Dout4
Dout3
Dout2
Dout1
Dout0
Vref1
Vref2
Vref3
Vref4
Vref5
Vr
GND
Vcp_in
Vdd(A)
Vcp_out
Vr
Vref6
NC
Vref7
Vref8
Vref9
All_reset
MST
Pclk
Hsync
Vsync
Vdd(D)
Vdd(A)
NC
SPI_reset
Description
Ground
Data signal for serial/parallel interface
Clock signal for serial/parallel interface
Enable signal for serial/parallel interface
Master clock signal
Supply voltage (3.3 V)
Video output signal (MSB)
Video output signal
Video output signal
Video output signal
Video output signal
Supply voltage (3.3 V)
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal (LSB)
Bias voltage for A/D converter*17
Bias voltage for A/D converter*17
Bias voltage for A/D converter*17
Bias voltage for A/D converter*17
Bias voltage for A/D converter*17
Supply voltage (3.3 V)*18 *19
Ground
Supply voltage (3.3 V)*18 *20
Supply voltage (3.3 V)
Bias voltage for booster circuit*21
Supply voltage (3.3 V)*18 *19
Bias voltage for CDS circuit*17
No connection
Bias voltage for CDS circuit*17
Bias voltage for amplifier*17
Bias voltage for amplifier*17
All reset pulse signal
Master start signal
Pixel output synchronization signal
Line synchronization signal
Frame synchronization signal
Supply voltage (3.3 V)
Supply voltage (3.3 V)
No connection
Reset signal for serial/parallel interface
I/O
I
I
I
I
I
I
O
O
O
O
O
I
O
O
O
O
O
O
O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
O
O
I
I
I
*17: Terminal for monitoring the bias voltage generated in the chip. To reduce noise, insert a capacitor of about 1 μF between the
ground and each terminal.
*18: To reduce noise, insert a capacitor of about 0.1 μF and an electrolytic capacitor of about 22 μF/25 V between the ground and each
terminal.
*19: Connect this terminal to Vdd(A).
*20: Connect this terminal to Vdd(D).
*21: Voltage of approx. 5.5 V, which was boosted by the chip's internal booster circuit, appears at the terminal. To maintain the voltage,
insert a capacitor of about 1 μF between the ground and Vcp_out.
6
CMOS area image sensors
S11661, S11662
S11662
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Symbol
SPI_enable
NC
Dout11
Dout10
Dout9
Dout8
Dout7
Dout6
Dout5
Dout4
Dout3
Vdd(D)
Vdd(A)
Dout2
Dout1
Dout0
Vref1
Vref2
Vref3
Vref4
Vref5
GND
Vref6
Vref7
Vref8
NC
Vcp_in
Vr
NC
NC
NC
NC
GND
Vr
Vcp_out
All_reset
MCLK
MST
Pclk
Hsync
Vsync
Vref9
Vdd(A)
Vdd(D)
GND
SPI_reset
SPI_data
SPI_clk
Description
Enable signal for serial/parallel interface
No connection
Video output signal (MSB)
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Video output signal
Supply voltage (3.3 V)
Supply voltage (3.3 V)
Video output signal
Video output signal
Video output signal (LSB)
Bias voltage for A/D converter*22
Bias voltage for A/D converter*22
Bias voltage for A/D converter*22
Bias voltage for A/D converter*22
Bias voltage for A/D converter*22
Ground
Bias voltage for CDS circuit*22
Bias voltage for CDS circuit*22
Bias voltage for amplifier*22
No connection
Supply voltage (3.3 V)*23 *24
Supply voltage (3.3 V)*23 *25
No connection
No connection
No connection
No connection
Ground
Supply voltage (3.3 V)*23 *25
Bias voltage for booster circuit*26
All reset pulse signal
Master clock signal
Master start signal
Pixel output synchronization signal
Line synchronization signal
Frame synchronization signal
Bias voltage for amplifier*22
Supply voltage (3.3 V)
Supply voltage (3.3 V)
Ground
Reset signal for serial/parallel interface
Data signal for serial/parallel interface
Clock signal for serial/parallel interface
I/O
I
O
O
O
O
O
O
O
O
O
I
I
O
O
O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
O
O
I
I
I
I
I
I
I
*22: Terminal for monitoring the bias voltage generated in the chip. To reduce noise, insert a capacitor of about 1 μF between the
ground and each terminal.
*23: To reduce noise, insert a capacitor of about 0.1 μF and an electrolytic capacitor of about 22 μF/25 V between the ground and each
terminal.
*24: Connect the terminal to Vdd(D).
*25: Connect the terminal to Vdd(A).
*26: Voltage of approx. 5.5 V, which was boosted by the chip's internal booster circuit, appears at the terminal. To maintain the voltage,
insert a capacitor of about 1 μF between the ground and Vcp_out.
7
CMOS area image sensors
S11661, S11662
Precautions
(1) Electrostatic countermeasures
This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges.
Also protect this device from surge voltages which might be caused by peripheral equipment.
(2) Incident window
If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the
window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton
swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so
that no spot or stain remains.
(3) Soldering by hand
To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times.
Soldering should be performed within 5 seconds at a soldering temperature below 260 °C.
(4) Reflow soldering
Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden
temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second.
The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on
the hermetic sealing of the product.
(5) UV exposure
This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light.
Recommended temperature profile for reflow soldering (typical example)
300 °C
Peak temperature
260 °C max.
Peak temperature - 5 °C
30 s max.
Cooling
6 °C/s max.
Temperature
Heating
3 °C/s max.
217 °C
200 °C
150 °C
Preheating
60 to 120 s
Soldering
60 to 150 s
25 °C to peak temperature
8 m max.
Time
KMPDB0405EA
∙ This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 °C or less and a
humidity of 60% or less, and perform soldering within 168 hours (S11661) or 4 weeks (S11662).
∙ The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used.
Before actual reflow soldering, check for any problems by tesitng out the reflow soldering methods in advance.
Recommended baking conditions
Refer to the precautions of ʺSurface mount type products.ʺ
8
CMOS area image sensors
S11661, S11662
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Image sensor
∙ Surface mount type products
Hamamatsu provides technical information of this product. Please contact our sales office.
Information described in this material is current as of December, 2014.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
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Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KMPD1133E02 Dec. 2014 DN
9