SiHH21N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • • • • • • • 700 RDS(on) typ. () at 25 °C VGS = 10 V Qg max. (nC) 0.157 102 Qgs (nC) 15 Qgd (nC) 28 Configuration Single Pin 4 PowerPAK® 8 x 8 Completely lead (Pb)-free device Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 4 • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) Pin 1 1 2 3 Pin 2 3 Pin 3 N-Channel MOSFET ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and Halogen-free SiHH21N65EF-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM Linear Derating Factor Single Pulse Avalanche Energy b EAS Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dt c UNIT V 19.8 12.5 A 53 1.47 W/°C 353 mJ PD 156 W TJ, Tstg -55 to +150 °C dV/dt 70 10 V/ns Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A. c. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-2995-Rev. A, 21-Dec-15 Document Number: 91739 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH21N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA 39 51 Maximum Junction-to-Case (Drain) RthJC 0.51 0.68 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 10 mA - 0.70 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 520 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 100 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS μA - 0.157 0.180 gfs VDS = 30 V, ID = 11 A - 7.8 - S Input Capacitance Ciss 2396 - Coss - 99 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance - 2 - Effective Output Capacitance, Energy Related a Co(er) - 74 - Effective Output Capacitance, Time Related b Co(tr) - 316 - - 68 102 - 15 - Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 11 A Dynamic pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 11 A, VDS = 520 V Gate-Drain Charge Qgd - 28 - Turn-On Delay Time td(on) - 24 48 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg nC VDD = 520 V, ID = 11 A, VGS = 10 V, Rg = 9.1 - 43 86 - 72 108 - 46 92 f = 1 MHz, open drain 0.27 0.55 1.10 - - 19.8 - - 53 - 0.95 1.3 V - 145 290 ns - 0.9 1.8 μC - 11.6 - A ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 11 A, VGS = 0 V TJ = 25 °C, IF = IS = 11 A, dI/dt = 100 A/μs, VR = 25 V S Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S15-2995-Rev. A, 21-Dec-15 Document Number: 91739 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH21N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 3.0 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 40 RDS(on), Drain-to-Source On-Resistance (Normalized) 30 20 10 0 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 -60 -40 -20 40 10 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 150 °C Ciss 1000 C, Capacitance (pF) 30 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics ID, Drain-to-Source Current (A) 2.5 20 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd Coss 100 10 Crss 10 1 0 0.1 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 60 14 5000 12 TJ = 25 °C 10 40 Coss (pF) ID, Drain-to-Source Current (A) 50 TJ = 150 °C 30 Eoss 8 Coss 500 6 Eoss (μJ) ID, Drain-to-Source Current (A) 50 ID = 11 A TJ = 25 °C 20 4 10 2 VDS = 28.8 V 0 50 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-2995-Rev. A, 21-Dec-15 25 0 0 100 200 300 VDS 400 500 600 Fig. 6 - COSS and EOSS vs. VDS Document Number: 91739 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH21N65EF www.vishay.com Vishay Siliconix 24 VDS = 520 V VDS = 325 V VDS = 130 V 20 18 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 6 4 0 0 0 30 60 90 120 Qg, Total Gate Charge (nC) 150 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 75 100 125 TC, Case Temperature (°C) 150 875 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 50 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage (V) 1.4 1.6 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this Area Limited by RDS(on) 100 850 825 800 775 750 725 700 ID = 10 mA 675 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM Limited 10 ID, Drain Current (A) 12 100 μs Limited by RDS(on)* 1 1 ms 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-2995-Rev. A, 21-Dec-15 Document Number: 91739 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH21N65EF www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 Pulse Time (s) 0.01 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance,, RthJA 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Time (s) Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient VDS VGS L RD Vary tp to obtain required IAS VDS D.U.T. RG D.U.T RG + - VDD + - IAS 10 V V DD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 0.01 Ω tp Fig. 14 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Test Circuit VDS VDS tp 90 % VDD VDS 10 % VGS td(on) tr td(off) tf Fig. 15 - Switching Time Waveforms S15-2995-Rev. A, 21-Dec-15 IAS Fig. 17 - Unclamped Inductive Waveforms Document Number: 91739 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH21N65EF www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 18 - Basic Gate Charge Waveform Fig. 19 - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 20 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91739. S15-2995-Rev. A, 21-Dec-15 Document Number: 91739 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8 Case Outline D2 D3 2x E3 0.1 C A D A 2x 0.1 C B K E E2 PPAK 8x8 (8 mm x 8 mm) L B e Pin 1 dot 5, 6 by marking TOP SIDE VIEW b 0.08 C A1 DIM. A2 A BACK SIDE VIEW MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. 8 0.95 1.00 1.05 0.037 0.039 0.041 A1 0.00 - 0.05 0.000 - 0.002 1.05 0.037 A A2 b4 020 ref. 0.95 1.00 MAX. 0.008 ref. 0.039 0.041 D 7.90 8.00 8.10 0.311 0.315 0.319 D2 7.10 7.20 7.30 0.280 0.283 0.287 D3 0.40 BSC 0.016 BSC e 2.00 BSC 0.079 BSC E 7.90 8.00 8.10 0.311 0.315 0.319 E2 4.30 4.35 4.40 0.169 0.171 0.173 E3 0.40 BSC 0.016 BSC K 2.75 BSC 0.108 BSC L 0.45 N3 0.50 0.55 8 0.018 0.020 0.022 8 Notes 1. Use millimeters as the primary measurement. 2. Dimensioning and tolerances conform to ASME Y14.5 M - 1994. 3. N is the number of terminals. 4. Package warpage max. 0.08 mm. 5. The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body. 6. Exact shape and size of this feature is optional. ECN: T15-0225-Rev. A, 18-May-15 DWG: 6041 Revision: 18-May-15 1 Document Number: 67859 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 mm x 8 mm 8.3 7.3 0.68 4.45 0.4 2.65 0.37 0.7 1.1 2 Dimensions in millimeters Revision: 07-Apr-16 Document Number: 68441 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000