SiHH26N60E Datasheet

SiHH26N60E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Fully lead (Pb)-free device
650
RDS(on) typ. (Ω) at 25 °C
VGS = 10 V
• Low figure-of-merit (FOM) Ron x Qg
0.117
Qg max. (nC)
116
• Low input capacitance (Ciss)
Qgs (nC)
18
• Reduced switching and conduction losses
33
• Ultra low gate charge (Qg)
Qgd (nC)
Configuration
Single
• Avalanche energy rated (UIS)
• Kelvin connection for reduced gate noise
PowerPAK® 8 x 8
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
4
D
APPLICATIONS
1
• Server and telecom power supplies
2
3
• Switch mode power supplies (SMPS)
3
Pin 4
• Power factor correction power supplies (PFC)
G
• Lighting
Pin 1
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
S
N-Channel MOSFET
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Pin 2
Pin 3
ORDERING INFORMATION
Package
PowerPAK 8 x 8
Lead (Pb)-free and Halogen-free
SiHH26N60E-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
V
25
16
A
IDM
50
1.6
W/°C
Single Pulse Avalanche Energy b
EAS
353
mJ
Maximum Power Dissipation
PD
202
W
TJ, Tstg
-55 to +150
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ = 125 °C
Reverse Diode dV/dt c
dV/dt
37
20
V/ns
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5 A.
c. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-2032-Rev. B, 24-Aug-15
Document Number: 91578
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH26N60E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
38
50
Maximum Junction-to-Case (Drain)
RthJC
0.48
0.62
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.67
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2
-
4
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
50
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
μA
-
0.117
0.135
Ω
gfs
VDS = 30 V, ID = 13 A
-
8.6
-
S
Input Capacitance
Ciss
2815
-
Coss
-
125
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
7
-
Effective Output Capacitance, Energy
Related a
Co(er)
-
124
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
381
-
-
77
116
-
18
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 13 A
Dynamic
pF
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
ID = 13 A, VDS = 480 V
Gate-Drain Charge
Qgd
-
33
-
Turn-On Delay Time
td(on)
-
28
56
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VDD = 480 V, ID = 13 A,
VGS = 10 V, Rg = 9.1 Ω
-
54
81
-
80
120
-
45
90
f = 1 MHz, open drain
0.2
0.5
1.1
-
-
25
-
-
50
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 13 A, VGS = 0 V
TJ = 25 °C, IF = IS = 13 A,
dI/dt = 100 A/μs, VR = 25 V
S
-
0.9
1.2
V
-
459
918
ns
-
7.6
15.2
μC
-
28
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S15-2032-Rev. B, 24-Aug-15
Document Number: 91578
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH26N60E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
80
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
60
TJ = 25 °C
ID = 13 A
RDS(on), Drain-to-Source On-Resistance
(Normalized)
ID, Drain-to-Source Current (A)
TOP
40
20
0
2.5
2.0
1.5
VGS = 10 V
1.0
0.5
0
0
5
10
15
20
25
- 60 - 40 - 20
30
VDS, Drain-to-Source Voltage (V)
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
80 100 120 140 160
TJ = 150 °C
10 000
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
60
100 000
TOP
20
Ciss
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
Crss
10
10
1
0
0.1
0
5
10
15
20
25
30
0
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
80
24
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
40
TJ, Junction Temperature (°C)
50
30
20
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
40
0
60
TJ = 25 °C
40
TJ = 125 °C
20
VDS = 480 V
VDS = 300 V
VDS = 120 V
20
16
12
8
4
VDS = 28.6 V
0
0
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-2032-Rev. B, 24-Aug-15
25
0
30
60
90
120
150
180
Qg, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91578
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH26N60E
www.vishay.com
Vishay Siliconix
30
100
TJ = 25 °C
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
25
TJ = 150 °C
10
1
20
15
10
5
VGS = 0 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
1.6
50
VSD, Source-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Operation in this Area
Limited by RDS(on)
100 μs
Limited by RDS(on)*
1 ms
1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
BVDSS Limited
0.01
1
10
125
150
750
IDM Limited
10
0.1
100
Fig. 9 - Maximum Drain Current vs. Case Temperature
100
VDS, Drain-to-Source Breakdown Voltage (V)
ID, Drain Current (A)
100
75
TC, Case Temperature (°C)
725
700
675
650
625
600
ID = 250 μA
575
1000
- 60 - 40 - 20
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Fig. 10 - Temperature vs. Drain-to-Source Voltage
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S15-2032-Rev. B, 24-Aug-15
Document Number: 91578
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH26N60E
www.vishay.com
Vishay Siliconix
1
Normalized Thermal Transient
Impedance, RthJA
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Ambient
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
D.U.T
RG
12 V
+
-
IAS
0.2 µF
0.3 µF
V DD
+
D.U.T.
-
VDS
10 V
tp
0.01 Ω
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S15-2032-Rev. B, 24-Aug-15
Document Number: 91578
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHH26N60E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91578.
S15-2032-Rev. B, 24-Aug-15
Document Number: 91578
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® 8 x 8 Case Outline
D2
D3
2x
E3
0.1 C A
D
A
2x
0.1 C B
K
E
E2
PPAK 8x8
(8 mm x 8 mm)
L
B
e
Pin 1 dot 5, 6
by marking
TOP SIDE VIEW
b
0.08 C
A1
DIM.
A2
A
BACK SIDE VIEW
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
8
0.95
1.00
1.05
0.037
0.039
0.041
A1
0.00
-
0.05
0.000
-
0.002
1.05
0.037
A
A2
b4
020 ref.
0.95
1.00
MAX.
0.008 ref.
0.039
0.041
D
7.90
8.00
8.10
0.311
0.315
0.319
D2
7.10
7.20
7.30
0.280
0.283
0.287
D3
0.40 BSC
0.016 BSC
e
2.00 BSC
0.079 BSC
E
7.90
8.00
8.10
0.311
0.315
0.319
E2
4.30
4.35
4.40
0.169
0.171
0.173
E3
0.40 BSC
0.016 BSC
K
2.75 BSC
0.108 BSC
L
0.45
N3
0.50
0.55
8
0.018
0.020
0.022
8
Notes
1. Use millimeters as the primary measurement.
2. Dimensioning and tolerances conform to ASME Y14.5 M - 1994.
3. N is the number of terminals.
4. Package warpage max. 0.08 mm.
5. The pin 1 identifier must be existed on the top surface of the package by using indentation mark or other feature of package body.
6. Exact shape and size of this feature is optional.
ECN: T15-0225-Rev. A, 18-May-15
DWG: 6041
Revision: 18-May-15
1
Document Number: 67859
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000