Variable Capacitance Diodes MA2S357 Silicon epitaxial planar type Unit : mm For CATV tuner 0.15 min. Unit Reverse voltage (DC) VR 34 V Peak reverse voltage* VRM 35 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) * : RL = 10 kΩ 0.27 − 0.02 + 0.05 0.27 − 0.02 + 0.05 Rating 1.7 ± 0.1 + 0.05 0.13 − 0.02 Symbol 1.3 ± 0.1 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8 ± 0.1 • Large capacitance ratio • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.7 ± 0.1 ■ Features Parameter 0.15 min. 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: N ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Capacitance ratio Diode capacitance deviation Series resistance*2 Symbol IR Conditions Min VR = 30 V CD(0V)*1 VR = 0 V, f = 1 MHz 58.0 Typ Max Unit 10 nA pF CD(2V) VR = 2 V, f = 1 MHz 29.00 34.30 pF CD(25V) VR = 25 V, f = 1 MHz 2.53 2.92 pF CD(10V) VR = 10 V, f = 1 MHz 6.40 8.32 pF CD(17V) VR = 17 V, f = 1 MHz 3.50 4.35 pF CD(2V)/CD(25V) 11.0 ∆C CD(2V)(10V)(17V)(25V) 2.0 % rD CD = 9 pF, f = 470 MHz 0.54 Ω Note) 1．Rated input/output frequency: 470 MHz 2．*1 : Measurement at Low Signal Level *2 : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1 MA2S357 Variable Capacitance Diodes CD VR f = 1 MHz Ta = 25°C 30 20 10 5 3 0 4 8 12 16 20 24 28 32 36 40 Reverse voltage VR (V) IR T a Reverse current IR (nA) 100 VR = 30 V 10 1 0.1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 2 25°C Ta = 60°C 80 60 − 40°C 40 0 f = 1 MHz 1.03 VR = 2 V 1.02 10 V 25 V 17 V 1.01 1.00 20 2 0.01 1.04 100 Forward current IF (mA) Diode capacitance CD (pF) 50 1 CD Ta IF V F 120 CD(Ta) CD(Ta = 25°C) 100 0.99 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 1.2 0.98 0 20 40 60 80 Ambient temperature Ta (°C) 100