Variable Capacitance Diodes MA2SV07 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. + 0.05 0.27 − 0.02 0.15 min. Symbol + 0.05 + 0.05 0.13 − 0.02 1.7 ± 0.1 Rating Unit Reverse voltage (DC) VR 6 V Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.3 ± 0.1 0.7 ± 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8 ± 0.1 • Good linearity and large capacitance-ratio in CD VR relation • High frequency type by this low capacitance • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 ■ Features 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 1A ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Symbol IR Conditions VR = 5 V Diode capacitance CD(1V) VR = 1 V, f = 1 MHz CD(3V) VR = 3 V, f = 1 MHz Capacitance ratio CD(1V)/CD(3V) Series resistance* rD Min VR = 3 V, f = 470 MHz Typ Max Unit 10 nA 3.12 pF 1.49 1.62 pF 1.84 2.02 0.35 Ω 2.88 Note) 1．Rated input/output frequency: 470 MHz 2．* : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 1