Si photodiode arrays S4111/S4114 series 16, 35, 46 element Si photodiode array for UV to NIR The S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, the S4111/S4114 series are able to detect low level light with high sensitivity. Crosstalk between elements is minimized to maintain signal purity. Special filters can be attached as the input window (custom order products). Features Applications Large photosensitive area Multichannel spectrophotometers Low crosstalk Color analyzers S4111 series: Enhanced infrared sensitivity, low dark current S4114 series: IR sensitivity suppressed type, low terminal capacitance, high-speed response Light spectrum analyzers Light position detection Structure / Absolute maximum ratings Type no. Window material Package (mm) S4111-16R S4111-16Q* S4111-35Q* S4111-46Q* S4114-35Q* S4114-46Q* Resin potting 18 pin DIP 40 48 40 48 Quartz pin pin pin pin DIP DIP DIP DIP Photosensitive Between Between area elements elements Number (per 1 element) measure pitch of elements Size Effective area (mm) (mm2) (mm) (mm) 1.45 × 0.9 1.305 (V) (°C) (°C) 15 -20 to +60 -20 to +80 16 0.1 4.4 × 0.9 Absolute maximum ratings Reverse Operating Storage voltage temperature temperature Topr Tstg VR max 1.0 3.96 35 46 35 46 * Refer to “Precautions against UV light exposure.” Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted) Type no. S4111-16R S4111-16Q S4111-35Q S4111-46Q S4114-35Q S4114-46Q Peak Spectral response sensitivity range wavelength λ λp (nm) 340 to 1100 190 to 1100 190 to 1000 (nm) 960 800 Dark Shunt Rise time Terminal current resistance tr capacitance Rsh ID RL=1 kΩ Ct Max. λ=655 nm VR=10 mV 200 nm 633 nm VR=10 mV VR=10 V Min λp Typ. VR=0 V VR=10 V VR=0 V VR=10 V (μs) (μs) (A/W) (A/W) (A/W) (pA) (pA) (GΩ) (GΩ) (pF) (pF) 0.39 5 25 2.0 250 200 50 0.5 0.1 0.08 0.43 0.58 10 50 1.0 30 550 120 1.2 0.3 0.08 0.43 0.50 60 300 0.15 2 35 20 0.1 0.05 Photosensitivity S www.hamamatsu.com NEP λ=λp VR=0 V VR=10 V (W/Hz1/2) (W/Hz1/2) 4.4 × 10-16 1.7 × 10-15 1.3 × 10-15 3.1 × 10-15 5.7 × 10-15 8.0 × 10-15 1 Si photodiode arrays S4111/S4114 series Photo sensitivity temperature characteristics Spectral response (Typ. Ta=25 °C) 0.8 +1.2 Photosensitivity (A/W) S4111-16Q/-35Q/-46Q 0.6 S4111-16R 0.5 0.4 0.3 0.2 S4114 series Temperature coefficient (%/°C) 0.7 S4111 series +1.0 +0.8 S4114 series +0.6 +0.4 +0.2 0 0.1 0 190 (Typ.) +1.4 400 600 800 1000 -0.2 190 1200 Wavelength (nm) 600 400 800 Wavelength (nm) KMPDB0112EB KMPDB0113EA Terminal capacitance vs. reverse voltage Dark current vs. reverse voltage Dark current 10 pA (Typ. Ta=25 °C) S4114-35Q/-46Q S4111-35Q/-46Q S4111-35Q/-46Q 1 pA S4111-16Q/-16R 100 fA 10 fA 0.01 (Typ. Ta=25 °C) 1 nF Terminal capacitance 100 pA 1000 1100 100 pF S4111-16Q/-16R S4114-35Q/-46Q 0.1 1 10 100 Reverse voltage (V) 10 pF 0.1 1 10 100 Reverse voltage (V) KMPDB0114EA KMPDB0115EA 2 Si photodiode arrays S4111/S4114 series Example of crosstalk S4111 series S4114 series (Ta=25 °C, λ=655 mm, VR=0 V) (Ta=25 °C, λ=655 mm, VR=0 V) 100 Relative sensitivity (%) Relative sensitivity (%) 100 10 1 10 1 0.1 0.1 Light position on photosensitive area (500 µm/div.) Light position on photosensitive area (500 µm/div.) KMPDB0015EA KMPDB0018EB Dimensional outline (unit: mm) S4111-16Q 7 8 1 2 3 Index mark Photosensitive surface (4.5) 0.9 ± 0.3 Resin Photosensitive surface 4 5 6 7 8 0.46 7.62 ± 0.3 6.5 1.45 7.62 ± 0.3 0.25 9 0.5 ± 0.2 7.87 ± 0.3 6 Photosensitive area ch 16 15.9 17 16 15 14 13 12 11 10 9 22.0 Quartz window 2.2 ± 0.3 5 18 7.49 ± 0.2 4 ch 1 (4.5) 1 2 3 Index mark 7.87 ± 0.3 7.49 ± 0.2 0.5 ± 0.2 0.5 Photosensitive area ch 16 15.9 18 17 16 15 14 13 12 11 10 Photosensitive surface 18.8 2.2 ± 0.3 1.45 ch 1 22.86 ± 0.3 Photosensitive surface 18.8 0.9 ± 0.3 22.86 ± 0.3 0.25 S4111-16R 0.46 2.54 2.54 P 2.54 × 8 = 20.32 P 2.54 × 8 = 20.32 KMPDA0136EB KMPDA0135EB 3 Si photodiode arrays S4111/S4114 series S4111-35Q, S4114-35Q S4111-46Q, S4114-46Q 50.8 ± 0.6 12 Index mark 2.8 ± 0.3 A (4.5) Quartz window Photosensitive surface 0.46 2.54 Type no. A S4111-35Q 1.45 S4114-35Q 1.35 0.25 ch 46 A Quartz window 0.46 2.54 P 2.54 × 23 = 58.42 P 2.54 × 19 = 48.26 15.24 ± 0.25* 23 24 (4.5) Photosensitive surface 26 25 15.11 ± 0.25 4.4 15.5 ± 0.3 19 20 Pin no. 1 2 48 47 15.5 ± 0.3 ch 1 15.24 ± 0.25* 22 21 ch 35 40 39 Photosensitive surface Photosensitive area 45.9 3.0 ± 0.3 0.25 Photosensitive area 34.9 15.11 ± 0.25 4.4 ch 1 65.0 ± 0.8 Photosensitive surface Type no. A S4111-46Q 1.65 S4114-46Q 1.55 KMPDA0021ED KMPDA0019ED A Details of elements (for all types) C B A B C S4111-16Q/16R 1.45 0.9 0.1 S4111-35Q/46Q S4114-35Q/46Q 4.4 0.9 0.1 C KMPDA0112EA 4 Si photodiode arrays Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 16-element type KC 2 4 6 8 10 12 14 16 KC 15 13 11 9 7 5 3 1 S4111/S4114 series Operating circuits 35-element type KC 2 4 6 8 10 12 14 16 18 NC 20 22 24 26 28 30 32 34 NC KC 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 NC 46-element type KC 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 KC 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 In the most generally used circuit, operational amplifiers are con-nected to each channel to read the output in real time. The output of an operational amplifier is of low impedance and thus can be easily multiplexed. PHOTODIODE ARRAY MULTIPLEXER KMPDC0001EA In the charge storage readout method, the charge stored in the junction capacitance of each channel, which is proportional to the incident light intensity, can be read out in sequence by a multiplexer. With this method, reverse voltage must be applied to the photodiodes, so S4111 and S4114 series are suitable. One amplifier is sufficient but care should be taken regarding noise, dynamic range, etc. ADDRESS PHOTODIODE ARRAY BIAS MULTIPLEXER KMPDC0002EA Hamamatsu also provides the C9004 driver circuit for Si photodiode arrays, that allows direct mounting of the S4111-16Q/R on the circuit board. 5 Si photodiode arrays S4111/S4114 series Precautions against UV light exposure ∙ When UV light irradiation is applied, the product characteristics may degrade. Such examples include degradation of the product’s UV sensitivity and increase in dark current. This phenomenon varies depending on the irradiation level, irradiation intensity, usage time, and ambient environment and also varies depending on the product model. Before employing the product, we recommend that you check the tolerance under the ultraviolet light environment that the product will be used in. ∙ Exposure to UV light may cause the characteristics to degrade due to gas released from the resin bonding the product’s component materials. As such, we recommend that you avoid applying UV light directly on the resin and apply it on only the inside of the photosensitive area by using an aperture or the like. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Disclaimer ∙ Metal, ceramic, plastic package products Technical information ∙ Si photodiode/Application circuit examples Information described in this material is current as of October, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1002E08 Oct. 2015 DN 6