g7150 g7151-16 kird1043e

InGaAs PIN photodiode arrays
G7150/G7151-16
16-element arrays
Features
Applications
16-element arrays
Near infrared (NIR) spectrophotometers
For simple measurement
Structure
Parameter
Photosensitive area
Element pitch
Number of elements
Package
Window material
G7150-16
0.45 × 1
0.5
G7151-16
0.08 × 0.2
0.1
16
18-pin DIP
Borosilicate glass
Unit
mm
mm
-
Value
5
-25 to +70
-25 to +70
260 °C or less, within 5 s
Unit
V
°C
°C
-
Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature*
Storage temperature*
Soldering conditions
Symbol
VR
Topr
Tstg
-
* No condensation
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Symbol
Spectral response range
Peak sensitivity wavelength
λ
λp
Photosensitivity
S
Dark current
Temperature coefficient of ID
Cutoff frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
ID
ΔTID
fc
Ct
Rsh
D*
NEP
Condition
λ=1.3 μm
λ=λp
VR=1 V
VR=1 V
VR=1 V, RL=50 Ω
λ=1.3 μm, -3 dB
VR=1 V, f=1 MHz
VR=10 mV
λ=λp
λ=λp
Min.
0.8
0.85
-
G7150-16
Typ.
0.9 to 1.7
1.55
0.9
0.95
5
1.09
Max.
25
-
Min.
0.8
0.85
-
G7151-16
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.2
1.09
Max.
1
-
nA
times/°C
10
30
-
100
300
-
MHz
100
1 × 1012
-
10
1000
5 × 1012
3 × 10-15
10
1 × 1012
-
100
200
100
5 × 1012
2 × 10-14 5 × 10-14
Unit
μm
μm
A/W
20
pF
MΩ
cm∙Hz1/2/W
-14
W/Hz1/2
2 × 10
The G7150/G7151-16 may be damaged by electrostatic discharge, etc. Be carefull when using the G7150/G7151-16.
www.hamamatsu.com
1
InGaAs PIN photodiode arrays
G7150/G7151-16
Spectral response
Photosensitivity temperature characteristics
(Typ. Ta=25 °C)
0.5
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
(Typ. Ta=25 °C)
2
Temperature coefficient (%/°C)
Photosensitivity (A/W)
1
1
0
-1
0.8
2.0
1.0
1.2
1.4
1.6
Wavelength (μm)
Wavelength (μm)
KIRDB0042EA
KIRDB0002EB
Dark current vs. reverse voltage
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
10000
1.8
(Typ. Ta=25 °C, f=1 MHz)
1000
G7150-16
Terminal capacitance (pF)
G7150-16
Dark current (pA)
1000
G7151-16
100
10
1
0.01
0.1
1
10
100
G7151-16
10
1
0.01
0.1
1
10
Reverse voltage (V)
Reverse voltage (V)
KIRDB0254EA
KIRDB0255EB
2
InGaAs PIN photodiode arrays
G7150/G7151-16
Shunt resistance vs. ambient temperature
(Typ. VR=10 mV)
100 GΩ
Shunt resistance
10 GΩ
G7151-16
1 GΩ
100 MΩ
G7150-16
10 MΩ
1 MΩ
-40
-20
0
20
40
60
80
100
Ambient temperature (°C)
KMIRB0013EA
Dimensional outlines (unit: mm)
7.5 ± 0.2
Window
Photosensitive
surface
Left side 1 ch, right side 16 ch
2.2 ± 0.3
1.1 ± 0.2
Index mark
Position accuracy of
photosensitive area center: -0.3≤X≤+0.3
-0.3≤Y≤+0.3
Position accuracy of
photosensive area inclination: -5°≤θ≤+5°
4.0 min.
2.54 ± 0.15
7.6 ± 0.25
1.7 ± 0.3
0.5 ± 0.1
22.9 ± 0.3
0.25 ± 0.05
G7150-16
0.46 ± 0.05
KIRDA0144ED
3
InGaAs PIN photodiode arrays
G7150/G7151-16
0.5 ± 0.1
22.9 ± 0.3
7.5 ± 0.2
Window
Photosensitive
surface
Left side 1 ch, right side 16 ch
2.2 ± 0.3
1.1 ± 0.2
Index mark
Position accuracy of
photosensitive area center: -0.3≤X≤+0.3
-0.3≤Y≤+0.3
Position accuracy of
photosensive area inclination: -5°≤θ≤+5°
4.0 min.
2.54 ± 0.15
7.6 ± 0.25
1.9 ± 0.3
0.25 ± 0.05
G7151-16
0.46 ± 0.05
KIRDA0030EF
Pin connections
Pin no.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Function
1 ch (anode)
3 ch (anode)
5 ch (anode)
7 ch (anode)
9 ch (anode)
Common (cathode)
11 ch (anode)
13 ch (anode)
15 ch (anode)
16 ch (anode)
14 ch (anode)
12 ch (anode)
Common (cathode)
10 ch (anode)
8 ch (anode)
6 ch (anode)
4 ch (anode)
2 ch (anode)
4
InGaAs PIN photodiode arrays
G7150/G7151-16
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Notice
∙ Metal, ceramic, plastic products/Precautions
Technical information
∙ Infrared detector/Technical information
Information described in this material is current as of July, 2012.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or
a suffix "(Z)" which means developmental specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product
use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1043E07 Jul. 2013 DN
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