InGaAs PIN photodiode arrays G12430 series 16/32/46 element InGaAs array for near IR detection The G12430 series is one-dimensional InGaAs PIN photodiode array in a ceramic DIP (dual inline package). It can be used to perform simple spectroscopic analysis. Features Applications 16, 32, or 46 element array NIR spectrophotometers Designed for simple measurement Large photosensitive area size Structure Parameter Cooling Number of elements Elements size Element pitch Package Window material G12430-016D G12430-032D G12430-046D Room temperature type 32 46 0.2 × 1 0.25 40-pin ceramic DIP 48-pin ceramic DIP Borosilicate glass 16 0.45 × 1 0.5 18-pin ceramic DIP Unit elements mm mm - V Details of photosensitive area Number of elements x H 16 0.45 0.5 0.2 0.25 32 46 V Unit 1 mm x H KIRDC0118EB Static electricity can damage or degrade the G12430 series. Use caution when handling. www.hamamatsu.com 1 InGaAs PIN photodiode arrays G12430 series Absolute maximum ratings (Ta=25 °C) Parameter Reverse voltage Operating temperature Storage temperature Soldering conditions Symbol VR Topr Tstg - Value 5 -20 to +70* -20 to +85* 260 °C or less, within 5 s Unit V °C °C - * No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 °C, per element) Parameter Symbol Spectral response range Peak sensitivity wavelength Photosensitivity Dark current Dark current temperature coefficient Cutoff frequency λ λp S ID λ=λp VR=1 V ΔTID fc Terminal capacitance Shunt resistance Detectivity Noise equivalent power Condition Ct Rsh D* NEP VR=10 mV G12430-016D Min. Typ. Max. Unit 0.9 to 1.7 - - 0.9 to 1.7 - - 0.9 to 1.7 - μm 1.45 0.85 - 1.55 0.95 500 1.65 2500 1.45 0.85 - 1.55 0.95 250 1.65 1250 1.45 0.85 - 1.55 0.95 250 1.65 1250 μm A/W pA - 1.1 - - 1.1 - - 1.1 - times/°C VR=1 V, RL=50 Ω 15 30 25 60 25 60 MHz λ=1.3 μm, -3 dB VR=1 V, f=1 MHz 70 100 35 60 35 60 pF VR=10 mV 20 100 40 200 40 200 MΩ 2 × 1012 5 × 1012 2 × 1012 5 × 1012 2 × 1012 5 × 1012 cm · Hz1/2/W λ=λp λ=λp 1.4 × 10-14 3.5 × 10-14 1 × 10-14 2.4 × 10-14 1 × 10-14 2.4 × 10-14 W/Hz1/2 Spectral transmittance of window material (Typ. Ta=25 °C) 1.0 (Typ. Ta=25 °C) 100 0.8 95 Transmittance (%) Photosensitivity (A/W) G12430-046D Min. Typ. Max. - Spectral response 0.6 0.4 0.2 0 0.8 G12430-032D Min. Typ. Max. 90 85 80 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) 75 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (μm) KIRDB0565EA KIRDB0566EA 2 InGaAs PIN photodiode arrays G12430 series Linearity (Typ. Ta=25 °C) 2 (Typ. Ta=25 °C, λ=1.55 μm, light spot size:ϕ50 μm) VR=0 V VR=1 V 100 Relative sensitivity (%) Temperature coefficient of sensitivity (%/°C) Photosensitivity temperature characteristics 1 0 98 96 G12430-032D /-046D G12430-016D 94 92 -1 0.8 90 1.0 1.2 1.4 1.6 1.8 0 Wavelength (μm) 1 2 3 4 5 6 7 8 9 10 Incident light level (mW) KIRDB0042EA KIRDB0567A Cross-talk characteristics G12430-016D (Typ. Ta=25 °C, λ=1.55 μm, VR=0 V, light spot size: approx. ϕ10 μm) 10 1 0.1 0.01 -1.0 100 Relative sensitivity (%) Relative sensitivity (%) 100 G12430-032D/-046D -0.5 0 0.5 1.0 (Typ. Ta=25 °C, λ=1.55 μm, VR=0 V, light spot size: approx. ϕ10 μm) 10 1 0.1 0.01 -0.5 -0.25 0 0.25 0.5 Position on photosensitive area (mm) Position on photosensitive area (mm) KIRDB0568EA KIRDB0569EA 3 InGaAs PIN photodiode arrays G12430 series Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage (Typ. Ta=25 °C) 1000 (Typ. Ta=25 °C) 100 G12430-016D Terminal capacitance (pF) Dark current (pA) G12430-016D 100 G12430-032D/-046D 10 0.01 0.1 1 10 G12430-032D/-046D 10 0.1 1 10 Reverse voltage (V) Reverse voltage (V) KIRDB0570EA KIRDB0572EA Shunt resistance vs. ambient temperature (Typ.) 100 GΩ Shunt resistance 10 GΩ G12430-032D/-046D 1 GΩ 100 MΩ G12430-016D 10 MΩ 1 MΩ -30 -20 -10 0 10 20 30 40 50 60 70 80 Ambient temperature (°C) KIRDB0571EA 4 InGaAs PIN photodiode arrays G12430 series Dimensional outlines (unit: mm) 22.86 ± 0.25 20.7 ± 0.1 1.65 ± 0.2 Photosensitive surface Photosensitive area 0.89 ± 0.25 1 ch 1.37 ± 0.2 4.0 min. 0.5 ± 0.05 Index mark 2.16 ± 0.25 7.62 ± 0.25 6.7 ± 0.1 7.49 ± 0.2 7.87 ± 0.25 Window 2.54 ± 0.15 0.25 ± 0.05 G12430-016D 0.46 ± 0.05 20.32 ± 0.15 Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.5 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° KIRDA0237EA 50.8 ± 0.51 1.30 ± 0.15 8.5 ± 0.35 2221 1920 1 ch Photosensitive area 1.27 ± 0.25 Index mark 3.0 ± 0.3 Window Photosensitive surface 1 2 4.0 min. 15.49 ± 0.25 15.11 ± 0.25 4039 15.24 ± 0.25 22.8 ± 0.35 0.25 ± 0.05 G12430-032D 2.54 ± 0.13 0.46 ± 0.05 48.26 ± 0.2 Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.75 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° KIRDA0238EA 5 InGaAs PIN photodiode arrays G12430 series 65.0 ± 0.65 22.8 ± 0.35 1.3 ± 0.15 Window 15.24 ± 0.25 26 25 8.5 ± 0.35 15.49 ± 0.25 15.11 ± 0.25 48 47 Photosensitive surface 23 24 1 2 1 ch Photosensitive area Package material: Ceramic Lead treatment: Ni/Au plating Lead material: FeNi alloy Reflective index of window material: 1.47 Window thickness: 0.75 ± 0.05 AR coat: None Window sealing method: Resin sealing Position accuracy of photosensitive area center: -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Position accuracy of photosensitive area inclination: -5°≤θ≤+5° 3.0 ± 0.3 Index mark 4±1 0.25 ± 0.05 G12430-046D 2.54 ± 0.13 0.46 ± 0.05 58.42 ± 0.2 KIRDA0239EA Pin connections Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 G12430-016D KC 2 4 6 8 10 12 14 16 KC 15 13 11 9 7 5 3 1 - G12430-032D KC NC 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 NC NC KC NC 31 29 G12430-046D KC 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 Pin no. 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 G12430-016D - G12430-032D 27 25 23 21 19 17 15 13 11 9 7 5 3 1 NC NC - G12430-046D KC 45 43 41 39 37 35 33 31 29 27 25 23 21 19 17 15 13 11 9 7 5 3 1 6 InGaAs PIN photodiode arrays G12430 series Operating circuit In the most generally used circuit, op amplifiers are connected to each channel to read the output in real time. The output of an op amplifier is of low impedance and thus can be easily multiplexed. Photodiode array Multiplex KMPDC0001EA Related information www.hamamatsu.com/sp/ssd/doc_ja.html Precautions Notice · · Metal, ceramic, plastic package products / Precautions Technical information Infrared detector / Technical information · Information described in this material is current as of March, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KIRD1124E02 Mar. 2014 DN 7