k3413-05 etc kird1041e

Two-color detectors
K3413-05/-08/-09
Sensors with a wide spectral response range
from UV to IR
The K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN
photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.32 μm to nearly 2.6
μm. The built-in thermoelectric cooler maintains a constant temperature during operation, allowing precision measurement
with an improved S/N.
Features
Applications
Wide spectral response range
Spectrophotometers
Si photodiode and InGaAs PIN photodiode are arranged along the same optical axis.
Laser monitors
One-stage thermoelectrically cooled type
Flame monitors
Radiation thermometers
Structure/Absolute maximum ratings
Absolute maximum ratings
TE-cooler
Reverse
Operating
Storage
Type No.
Package
Cooling
allowable
voltage
temperature temperature
current
VR
Topr
Tstg
(mm)
(A)
(V)
(°C)
(°C)
Si
2.4 × 2.4
5
K3413-05
InGaAs
20
φ0.5
Si
2.4 × 2.4
5
One-stage
TO-8
K3413-08
0.2
1.5
-40 to +70
-55 to +85
TE-cooled
InGaAs
2
φ1
Si
2.4 × 2.4
5
K3413-09
InGaAs
10
φ1
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Photosensitive
Detector
area
element
Thermistor
allowable
dissipation
(mW)
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Measurement
condition
Type No.
K3413-05
K3413-08
K3413-09
*1:
*2:
*3:
*4:
*5:
Peak
PhotoSpectral
sensitivity sensitivity
Element response
S
wavelength
Detector
temperature range
λ=λp
λp
element
T
Si
InGaAs
Si
InGaAs
Si
InGaAs
(°C)
25
-10
25
-10
25
-10
(μm)
0.32 to
1.67
0.32 to
2.57
0.32 to
1.67
(μm)
0.94
1.55
0.94
2.30
0.94
1.55
Dark current
ID
VR=10 mV
Shunt
Resistance
Rsh
D*
λ=λp
(MΩ)
200
3000
200
0.03
200
1500
(cm · Hz1/2/W)
1.4 × 1013
1.2 × 1013
1.4 × 1013
7.4 × 1010
1.4 × 1013
1.2 × 1013
Typ.
Max.
(A/W)
(pA)
(pA)
0.45
50
100
0.55
50 *1
250 *1
0.45
50
100
0.60 1.5 (μA) *2 7.5 (μA) *2
0.45
50
100
0.55
70 *2
350 *2
Terminal
Rise time
capacitance
tr
Ct
VR=0 V
VR=5 V
RL=1 kΩ
10 to 90 %
f=1 MHz
(ns)
200 *3
1.5 *4
200 *3
23 *4
200 *3
7 *4
(pF)
60 *5
12
60 *5
200 *2
60 *5
90
VR=5 V
VR=1 V
λ=655 nm
VR=5 V, RL=50 Ω
VR=0 V, f=10 kHz
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1
Two-color detectors
K3413-05/-08/-09
Spectral response
Si photodiode
InGaAs PIN photodiode
(Typ. Ta=25 °C)
0.7
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.5
0.4
0.3
0.2
0.1
0
0.2
(Typ. T=-10 °C)
0.7
0.5
0.4
K3413-08
0.3
K3413-05/-09
0.2
0.1
0.4
0.6
0.8
1.0
0
0.8 1.0
1.2
1.2 1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Wavelength (µm)
Wavelength (µm)
KIRDB0199EA
KIRDB0212EA
Dark current vs. reverse voltage
Si photodiode
InGaAs PIN photodiode
(Typ. Ta=25 °C)
1 nA
(Typ. Ta=25 °C)
100 µA
10 µA
K3413-08
Dark current
Dark current
1 µA
100 pA
100 nA
10 nA
K3413-09
1 nA
K3413-05
10 pA
0.01
0.1
1
10
100 pA
0.01
0.1
1
10
100
Reverse voltage (V)
Reverse voltage (V)
KIRDB0200EA
KIRDB0213EA
2
Two-color detectors
K3413-05/-08/-09
Terminal capacitance vs. reverse voltage
Si photodiode
InGaAs PIN photodiode
(Typ. Ta=25 °C, f=10 kHz)
100 pF
(Typ. Ta=25 °C, f=1 MHz)
10 nF
K3413-08
Terminal capacitance
Terminal capacitance
1 nF
10 pF
100 pF
10 pF
K3413-09
K3413-05
1 pF
1 pF
0.01
0.1
1
100 fF
0.01
10
0.1
Reverse voltage (V)
1
10
100
Reverse voltage (V)
KIRDB0202EA
KIRDB0214EA
Shunt resistance vs. element temperature
Si photodiode
InGaAs PIN photodiode
(Typ. VR=10 mV)
10 TΩ
10 GΩ
1 TΩ
100 MΩ
Shunt resistance
Shunt resistance
K3413-05
1 GΩ
100 GΩ
10 GΩ
1 GΩ
100 MΩ
10 MΩ
K3413-09
10 MΩ
1 MΩ
K3413-08
100 kΩ
10 kΩ
1 MΩ
100 kΩ
-40
(Typ. VR=10 mV)
100 GΩ
1 kΩ
-20
0
20
40
60
80
100
Element temperature (°C)
100 Ω
-40
-20
0
20
40
60
80
100
Element temperature (°C)
KIRDB0204EA
KIRDB0215EA
3
Two-color detectors
K3413-05/-08/-09
Dimensional outline (unit: mm)
15.3 ± 0.2
14 ± 0.2
10.0 ± 0.2
0.45
Lead
6.0 ± 0.2
4.4 ± 0.2
InGaAs
12 Min.
Si
Window
10 ± 0.2
10.2 ± 0.2
5.1 ± 0.2
10.2 ± 0.2
InGaAs (Anode)
InGaAs (Cathode)
TE-Cooler (-)
TE-Cooler (+)
Thermistor
Si (Cathode)
Si (Anode)
5.1 ± 0.2
KIRDA0156EE
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic products
Technical information
∙ Infrared detectors
Information described in this material is current as of November, 2015.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KIRD1041E05 Nov. 2015 DN
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