Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO (free space optics) and optical rangefinders. Features Applications Stable operation at low bias FSO High-speed response Optical rangefinders High sensitivity and low noise Structure / Absolute maximum ratings Type no. Dimensional outline/Window material*1 S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A*3 S3884 S2384 S2385 (1)/K (1)/K (2)/L (3)/L (1)/K (1)/K (4)/K (5)/K (6)/K Package Effective photosensitive area size*2 (mm) φ0.2 TO-18 TO-8 Absolute maximum ratings Storage temperature Soldering Tstg conditions (°C) φ0.5 φ1.0 TO-5 Operating temperature Topr (°C) -20 to +85 -55 to +125 260 °C or less, within 10 s φ1.5 φ3.0 φ5.0 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: K=borosilicate glass, L=lens type borosilicate glass *2: Photosensitive area in which a typical gain can be obtained *3: This is a variant of the S12023-10 in which the device chip is light-shielded by aluminum layer except for the photosensitive area. www.hamamatsu.com 1 Si APD S12023 series, etc. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A*3 S3884 S2384 S2385 Quantum PhotoSpectral Peak*4 Cutoff*4 Breakdown Temp. Dark*4 Terminal*4 Excess*4 sensitivity efficiency frequency response sensitivity covoltage current capacitance QE S Gain noise fc range wavelength efficient VBR Ct ID M=1 M=1 M figure ID=100 μA of VBR λ λp RL=50 Ω λ=800 nm λ=800 nm x λ=800 nm λ=800 nm Typ. Max. Typ. Max. (nm) (nm) (A/W) (%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF) 0.05 0.5 1000 1 0.1 1 900 2 100 400 to 1000 800 0.5 75 150 200 0.65 0.2 2 600 6 0.5 1 3 5 10 30 400 120 40 10 40 95 0.3 60 40 *4: Values measured at a gain listed in the characteristics table Note: Breakdown voltage can be specified by using the suffix of type number as examples shown below. S12023-02-01: 80 to 120 V S12023-02-02: 120 to 160 V S12023-02-03: 160 to 200 V Spectral response Quantum efficiency vs. wavelength (Typ. Ta=25 °C, M at 800 nm) 60 100 (Typ. Ta=25 °C) M=100 80 Quantum efficiency (%) Photosensitivity (A/W) 50 40 30 M=50 20 60 40 20 10 0 200 300 400 500 600 700 800 900 1000 1100 0 200 300 400 500 600 700 800 900 1000 1100 Wavelength (nm) Wavelength (nm) KAPDB0020EB KAPDB0021EA 2 Si APD S12023 series, etc. Dark current vs. reverse voltage Gain vs. reverse voltage (Typ. Ta=25 °C) 10 nA (Typ. λ=800 nm) 10000 20 °C S2384 0 °C 1000 1 nA -20 °C S12023-10/-10A Gain Dark current S3884 100 pA 100 40 °C 10 pA 1 pA S12023-05, S12051 S12086 S12023-02 0 50 100 10 60 °C 1 80 150 100 120 140 160 180 Reverse voltage (V) Reverse voltage (V) KAPDB0016ED KAPDB0017EC Terminal capacitance vs. reverse voltage Excess noise factor vs. gain (Typ. Ta=25 °C, f=1 MHz) 1 nF (Typ. Ta=25 °C, f=10 kHz, B=1 Hz) 10 M0.5 S2385 100 pF S3884 Excess noise factor Terminal capacitance S2384 S12023-10/-10A 10 pF λ=650 nm M0.3 S12023-05, S12051, S12086 1 pF M0.2 S12023-02 λ=800 nm 100 fF 0 50 100 150 1 1 10 100 Gain Reverse voltage (V) KAPDB0018ED KAPDB0022EA 3 Si APD S12023 series, etc. Dimensional outlines (unit: mm) 4.65 ± 0.1 (13.5) 0.45 Lead 2.8 ± 0.2 Photosensitive surface Photosensitive surface 3.75 ± 0.2 4.7 ± 0.1 0.65 ± 0.15 5.4 ± 0.2 3.7 ± 0.2 5.4 ± 0.1 2.8 ± 0.2 Window 2.0 min. (2) S12051 0.45 Lead (13.5) (1) S12023-02/-05/-10/-10A 2.54 ± 0.2 2.54 ± 0.2 Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 Case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KAPDA0018EB KAPDA0136EA (4) S3884 2.54 ± 0.2 4.7 ± 0.2 0.45 Lead (20) (13.5) 2.8 ± 0.2 0.45 Lead Photosensitive surface 2.6 ± 0.2 8.2 ± 0.1 Window 3.0 min. 4.5 ± 0.2 5.4 ± 0.2 9.1 ± 0.2 0.4 max. 2.15 ± 0.3 (3) S12086 5.08 ± 0.2 1.5 max. Case Distance from photosensitive area center to cap center -0.2≤X≤+0.2 -0.2≤Y≤+0.2 KAPDA0031EB Case Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 KAPDA0011EC 4 Si APD S12023 series, etc. 12.35 ± 0.1 Window 10.5 ± 0.1 0.45 Lead 5.08 ± 0.2 7.5 ± 0.2 1.5. max. 1.0 max. Case The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. Index mark 1.4 Distance from photosensitive area center to cap center -0.4≤X≤+0.4 -0.4≤Y≤+0.4 Distance from photosensitive area center to cap center -0.3≤X≤+0.3 -0.3≤Y≤+0.3 Case 0.5 max. 0.45 Lead Photosensitive surface (20) 0.4 max. Photosensitive surface (15) 8.1 ± 0.1 Window 5.9 ± 0.1 4.2 ± 0.2 13.9 ± 0.2 2.6 ± 0.2 9.1 ± 0.2 4.9 ± 0.2 (6) S2385 2.9 ± 0.2 (5) S2384 The glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KAPDA0013EE KAPDA0012EC Replacements for previous products Previous product (listed on the previous datasheet)* S2381 S2382 S5139 S8611 S2383 S2383-10 Replacement (listed on this datasheet) S12023-02 S12023-05 S12051 S12086 S12023-10 S12023-10A * Products that have been removed from this datasheet 5 Si APD S12023 series, etc. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Metal, ceramic, plastic package products / Precautions Technical information ∙ Si APD / Technical information Information described in this material is current as of February, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KAPD1007E12 Feb. 2014 DN 6