LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC 2. Features and benefits • • • • High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation 3. Applications • • • • Load switch Power management Linear mode voltage regulator Backlighting apllications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 100 V IC collector current - - 2 A ICM peak collector current single pulse; tp ≤ 1 ms - - 6 A RCEsat collector-emitter saturation resistance IC = 2 A; IB = 200 mA; pulsed; - 80 150 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E 1 2 3 4 sym123 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number PHPT61002NYC Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT61002NYC 1002NCA PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 2 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 100 V VCEO collector-emitter voltage open base - 100 V VEBO emitter-base voltage open collector - 7 V IC collector current - 2 A ICM peak collector current - 6 A IB base current - 0.5 A Ptot total power dissipation [1] - 1.25 W [2] - 3 W [3] - 5 W [4] - 25 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] [4] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated mounting pad for collector 6 cm . Device mounted on an ceramic PCB; Al2O3; standard footprint. Power dissipation from junction to mounting base. aaa-010424 8 Ptot (W) 6 (1) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 3 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) Conditions in free air Min Typ Max Unit [1] - - 115 K/W [2] - - 50 K/W [3] - - 30 K/W - - 6 K/W thermal resistance from junction to solder point [1] [2] [3] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm . Device mounted on an ceramic PCB, Al2O3, standard footprint. aaa-010427 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 10 1 0.05 0.01 10-1 10-5 0.5 0.1 0.02 0.25 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 4 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor aaa-010428 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.01 10-2 10-5 0.02 0.25 0 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 5 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 80 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 80 V; IE = 0 A; Tj = 150 °C - - 50 µA ICES collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 7 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 1.5 V; IC = 500 mA; Tamb = 25 °C 100 200 - VCE = 10 V; IC = 500 mA; tp ≤ 300 µs; 150 250 - 80 200 - 20 140 - 10 100 - δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = 10 V; IC = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed VCE = 10 V; IC = 2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = 10 V; IC = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C; pulsed collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA; Tamb = 25 °C - 50 75 mV IC = 2 A; IB = 200 mA; pulsed; - 160 300 mV RCEsat collector-emitter saturation resistance tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 80 150 mΩ VBEsat base-emitter saturation IC = 1 A; IB = 50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 0.92 1 V - 1.08 1.2 V VCEsat IC = 2 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = 2 V; IC = 0.1 A; Tamb = 25 °C - 0.68 0.85 V td delay time VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; - 20 - ns tr rise time IBoff = -0.05 A; Tamb = 25 °C - 300 - ns ton turn-on time - 320 - ns ts storage time - 830 - ns tf fall time - 470 - ns toff turn-off time - 1300 - ns fT transition frequency - 140 - MHz - 11 - pF VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 6 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor aaa-010806 500 aaa-010807 3 IB = 50 mA hFE 400 40 35 30 2 (2) 300 45 IC (A) (1) 25 20 15 200 10 (3) 1 5 100 0 10-1 1 10 102 0 103 104 IC (mA) VCE = 1 V 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 4. 0 DC current gain as a function of collector current; typical values aaa-010808 8 aaa-010809 1.6 VBE (V) VBEsat (V) 6 1.2 4 0.8 (1) (1) (2) (2) 2 0.4 (3) (3) 0 10-1 Fig. 6. 1 10 102 0 10-1 103 104 IC (mA) 1 10 VCE = 2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PHPT61002NYC Product data sheet Fig. 7. 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 9 January 2014 102 © NXP N.V. 2014. All rights reserved 7 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor aaa-010810 10 aaa-010812 10 VCEsat (V) VCEsat (V) 1 1 (1) (3) 10-1 (2) (1) Fig. 8. (3) 10-2 10-2 10-3 10-1 (2) 10-1 1 10 102 10-3 10-1 103 104 IC (mA) 1 10 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values aaa-010813 103 Fig. 9. aaa-010814 103 RCEsat (Ω) 102 102 10 10 (2) (3) 103 104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) 1 102 1 (1) (1) (2) 10-1 10-2 10-1 (3) 10-1 1 10 102 10-2 10-1 103 104 IC (mA) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT61002NYC Product data sheet 10 102 103 104 IC (mA) Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 8 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 13. Test circuit for switching times PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 9 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 10 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 11 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61002NYC v.1 20140109 Product data sheet - - PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 12 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 15.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PHPT61002NYC Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 13 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 14 / 15 PHPT61002NYC NXP Semiconductors 100V, 2 A NPN high power bipolar transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 January 2014 PHPT61002NYC Product data sheet All information provided in this document is subject to legal disclaimers. 9 January 2014 © NXP N.V. 2014. All rights reserved 15 / 15