Switching Diodes MA3X198 (MA198) Silicon epitaxial planar type Unit: mm For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two elements contained in one package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) 5˚ 1.50+0.25 –0.05 ■ Features 2.8+0.2 –0.3 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Repetitive peak reverse voltage Forward current (Average) Single Repetitive peak forward current Single Non-repetitive peak forward surge current* Single Unit VR 40 V VRRM 40 V IF(AV) 100 mA Series 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Reverse voltage 10˚ Symbol 0 to 0.1 Parameter 1: Anode 1 2: Cathode 2 3: Cathode 1 Anode 2 Mini3-G1 Package 75 IFRM 225 Series EIAJ: SC-59 mA Marking Symbol: M2F 170 IFSM 500 Series mA Internal Connection 325 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 Note) *: t = 1 s 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time* Conditions VF1 IF = 100 µA VF2 Min 2 Typ 0.65 Max Unit 0.72 V IR = 100 mA 1.2 V IR VR = 40 V 10 nA Ct VR = 6 V, f = 1 MHz 2.0 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 IR, RL = 100 Ω 100 ns 1.0 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. Publication date: February 2005 SKF00041DED 1 MA3X198 I F VF 102 1.6 10 Ta = 150°C 1 100°C 25°C 0 0.2 100°C 1 25°C 10 −1 − 20°C 10 −1 Ta = 150°C 10 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) 102 10 −2 VF Ta IR VR 103 0.4 0.6 0.8 1.0 1.2 10 −2 0 Forward voltage VF (V) 10 20 30 40 50 IR T a 1V 1 10 −1 40 160 200 80 1.6 1.2 0.8 0.4 0 10 20 30 40 50 Reverse voltage VR (V) SKF00041DED 120 160 200 IF(surge) tW 2.0 0 120 Ambient temperature Ta (°C) 2 0 103 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (nA) 6V 80 0.4 Ct VR VR = 30 V 40 3 mA Ambient temperature Ta (°C) 2.4 0 10 mA 0 −40 60 f = 1 MHz Ta = 25°C 10 −2 −40 IF = 100 mA 0.8 Reverse voltage VR (V) 102 10 1.2 60 Ta = 25°C IF(surge) tW Non repetitive 102 10 1 10 −1 10 −1 1 Pulse width tW (ms) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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