Switching Diodes MAS3132E Silicon epitaxial planar type Unit: mm For high-speed switching circuits 0.10+0.05 –0.02 0.33+0.05 –0.02 0.80±0.05 5˚ 1.20±0.05 • Two elements are contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance Ct 0.15 min. 3 ■ Features 2 0.15 min. 1 0.23+0.05 –0.02 (0.40) (0.40) 0.80±0.05 1.20±0.05 5˚ Forward current Single Rating Unit VR 80 V VRM 80 V IF 100 mA Double Peak forward current Single forward surge current Single * 1: Anode 1 2: Anode 2 3: Cathode 1, 2 SSSMini3-F1 Package 150 IFM 225 Double Non-repetitive peak 0.15 max. Maximum peak reverse voltage Symbol 0 to 0.01 Parameter Reverse voltage 0.52±0.03 ■ Absolute Maximum Ratings Ta = 25°C mA Marking Symbol: MU 340 IFSM 500 Double mA Internal Connection 750 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 Note) *: t = 1 s 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 100 mA Reverse voltage VR IR = 100 µA Reverse current IR VR = 75 V 100 nA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF trr IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 3 ns Reverse recovery time * 1.2 80 V V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: November 2003 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω SKF00065BED Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MAS3132E I R VR 102 104 10 Ta = 150°C 1 100°C 25°C −20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 Ta = 150°C 100°C 103 102 25°C 1 1.2 0 20 80 100 0 −40 120 0 40 10 0.8 0.6 0.4 0.2 0 160 Ambient temperature Ta (°C) 200 0 20 40 60 80 100 Reverse voltage VR (V) SKF00065BED 120 160 200 IF(surge) tW 103 Ta = 25°C IF(surge) Forward surge current IF(surge) (A) 102 120 80 Ambient temperature Ta (°C) 1.0 103 80 3 mA f = 1 MHz Ta = 25°C 35 V 6V Terminal capacitance Ct (pF) Reverse current IR (nA) 60 VR = 75 V 40 10 mA 0.4 Ct VR 104 2 40 1.2 0 IF = 100 mA 0.8 Reverse voltage VR (V) IR T a 1 −40 1.2 10 Forward voltage VF (V) 105 VF T a 1.6 Forward voltage VF (V) 105 Reverse current IR (nA) Forward current IF (mA) IF V F 103 120 tW Non repetitive 102 10 1 10−1 10−1 1 Pulse width tW (ms) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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