Switching Diodes MA3S132A (MA132A), MA3S132K (MA132K) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ (0.44) • Short reverse recovery time trr • Small terminal capacitance Ct • Allowing high-density mounting (0.80) ■ Features 1.60±0.05 3 0.28±0.05 (0.51) (0.51) (0.80) (0.80) (0.375) For switching circuits 0.60+0.05 –0.03 1.60+0.05 –0.03 3˚ Symbol Rating Unit Reverse voltage VR 80 V Maximum peak reverse voltage VRM 80 V Forward current IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current * IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (0.15) Parameter 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C MA3S132A 1 Cathode 2 N.C. 3 Anode EIAJ: SC-81 SSMini3-F2 Package Marking Symbol: • MA3S132A: MB MA3S132K Anode N.C. Cathode • MA3S132K: MI Internal Connection 3 3 Note) *: t = 1 s 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions A 2 1 Unit 1.2 V 100 nA VR = 0 V, f = 1 MHz 2 pF IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 3 ns VF IF = 100 mA Reverse voltage VR IR = 100 µA Reverse current IR VR = 75 V Terminal capacitance Ct Reverse recovery time * trr Typ 2 Max Forward voltage Min K 80 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Wave Form Analyzer (SAS-8130) Ri = 50 Ω Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part numbers in the parenthesis show conventional part number. Publication date: March 2004 SKF00023BED 1 MA3S132A, MA3S132K Characteristics charts of MA3S132A IR V R 105 102 104 Ta = 150°C 1 100°C 25°C −20°C 10 −1 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) 10 10 −2 VF Ta 1.6 Ta = 150°C Reverse current IR (nA) Forward current IF (mA) IF VF 103 100°C 103 102 25°C 1 1.2 0 20 IR T a 40 60 80 100 0 −40 120 10 0.6 0.4 0 160 Ambient temperature Ta (°C) 2 0.8 0.2 120 200 0 20 40 60 80 100 Reverse voltage VR (V) SKF00023BED 80 103 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (nA) 6V 102 80 40 120 160 200 IF(surge) tW 1.0 35 V 104 40 0 Ct VR 1.2 0 3 mA Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 1 −40 10 mA 0.4 Reverse voltage VR (V) 105 103 IF = 100 mA 0.8 10 Forward voltage VF (V) VR = 75 V 1.2 120 Ta = 25°C IF(surge) tW Non repetitive 102 10 1 10 −1 10 −1 1 Pulse width tW (ms) 10 MA3S132A, MA3S132K Characteristics charts of MA3S132K IF VF IR V R Ta = 150°C 25°C −20°C 1 10 −1 100°C 103 102 25°C 1.2 IF = 100 mA 0.8 10 mA 3 mA 0.4 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 IR T a 60 80 100 0 −40 120 102 10 0.8 0.6 0.4 0.2 40 80 120 160 Ambient temperature Ta (°C) 200 20 40 60 80 100 Reverse voltage VR (V) SKF00023BED 200 Ta = 25°C 120 tW Non repetitive 102 10 1 10 −1 0 0 160 IF(surge) Forward surge current IF(surge) (A) 103 120 IF(surge) tW 1.0 35 V 6V 0 80 f = 1 MHz Ta = 25°C Terminal capacitance Ct (pF) 104 40 103 1.2 VR = 75 V 0 Ambient temperature Ta (°C) Ct VR 105 1 −40 40 Reverse voltage VR (V) Forward voltage VF (V) Reverse current IR (nA) Forward voltage VF (V) 100°C 10 1.6 104 Ta = 150°C Reverse current IR (nA) Forward current IF (mA) 102 10 −2 VF Ta 105 103 10 −1 1 10 Pulse width tW (ms) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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