V35PWM12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A FEATURES • Very low profile - typical height of 1.3 mm TMBS® eSMP® Series • Trench MOS Schottky technology • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 1 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 2 SlimDPAK PIN 1 PIN 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K HEATSINK TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 35 A MECHANICAL DATA VRRM 120 V IFSM 260 A Case: SlimDPAK Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified VF at IF = 35 A (TA = 125 °C) 0.68 V TJ max. 175 °C Package SlimDPAK Diode variation Single die Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range V35PWM12 UNIT V35PWM12 VRRM 120 V IF(AV) (1) 35 A IFSM 260 A TJ, TSTG -40 to +175 °C Note (1) With infinite heat sink Revision: 21-Dec-15 Document Number: 87653 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V35PWM12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5.0 A TA = 25 °C IF = 17.5 A Maximum Instantaneous forward voltage IF = 35 A VF (1) IF = 5.0 A TA = 125 °C IF = 17.5 A IF = 35 A VR = 90 V Reverse current Typical junction capacitance MAX. 0.51 - 0.72 - 0.96 1.05 0.42 - 0.59 - 0.68 0.76 TA = 25 °C 0.01 - TA = 125 °C 7 - - 1.2 13 40 2080 - TA = 25 °C VR = 120 V TYP. IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL RJA Typical thermal resistance V35PWM12 (1)(2) 55 RJM (3) UNIT °C/W 1.5 Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V35PWM12-M3/I 0.20 I 4500 13" diameter plastic tape and reel V35PWM12HM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel Note AEC-Q101 qualified (1) Revision: 21-Dec-15 Document Number: 87653 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V35PWM12 www.vishay.com Vishay General Semiconductor 40.0 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) TM = 132 ƱC, RthJM = 1.5 ƱC/W 30.0 20.0 10.0 TA = 25 ƱC, Rth JA = 55 ƱC/W 0 0 25 50 75 100 125 150 1000 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 175 10 Mount Temperature (°C) 20 30 40 10 000 Junction Capacitance (pF) D = 0.8 30.0 D = 0.5 25.0 D = 0.3 20.0 D = 1.0 D = 0.2 15.0 10.0 T D = 0.1 5.0 D = tp/T 70 80 90 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 tp 1 0.0 0 10 20 30 0.1 40 1 Average Forward Current (A) TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 25 °C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 1000 Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) 100 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 60 Fig. 4 - Typical Reverse Leakage Characteristics 35.0 1 50 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Average Power Loss (W) TA = 175 °C 100 100 Junction to Ambient 10 Junction to Mount 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 21-Dec-15 Document Number: 87653 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V35PWM12 www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 80 Epoxy printed circuit board FR4 copper thickness = 70 μm 70 60 50 40 30 20 10 S (cm2) 0 0 1 2 3 4 5 6 7 Copper Pad Areas 8 9 10 (cm2) Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimDPAK 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 21-Dec-15 Document Number: 87653 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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