V15PN50-M3 Datasheet

V15PN50-M3
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.26 V at IF = 5 A
FEATURES
TMBS®
eSMP® Series
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
1
• High efficiency operation
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
TO-277A (SMPC)
K
Anode 1
Cathode
Anode 2
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VRRM
50 V
IFSM
200 A
VF at IF = 15 A
0.41 V
TJ max.
150 °C
Package
TO-277A (SMPC)
Diode variation
Single die
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
V15PN50
UNIT
15N5
VRRM
50
V
(1)
15
IF (2)
6.0
Maximum DC reverse voltage
VDC
35
V
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
TJ, TSTG
-40 to +150
°C
Maximum average forward rectified current (fig. 1)
Operating junction and storage temperature range
IF
A
Notes
(1) Mounted on 30 mm x 30 mm 2 oz. pad PCB
(2) Free air, mounted on recommended copper pad area
Revision: 04-Dec-13
Document Number: 89966
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V15PN50-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5.0 A
IF = 7.5 A
TA = 25 °C
IF = 15 A
Instantaneous forward voltage
VF (1)
IF = 5.0 A
TA = 125 °C
IF = 7.5 A
IF = 15 A
TA = 25 °C
VR = 50 V
Reverse current
TA = 125 °C
IR (2)
TYP.
MAX.
0.38
-
0.41
-
0.48
0.56
0.26
-
UNIT
V
0.31
-
0.41
0.50
140
3000
μA
60
140
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  5 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
V15PN50
RJA (1) (2)
70
RJM (3)
4
UNIT
°C/W
Notes
(1) Free air, mounted on recommended copper pad area; thermal resistance R
JA - junction to ambient
(2) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R
D
J
JA
(3) Mounted on 30 mm x 30 mm 2 oz. pad PCB; thermal resistance R
JM - junction to mount measured at cathode side
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
V15PN50-M3/86A
0.10
86A
1500
7" diameter plastic tape and reel
V15PN50-M3/87A
0.10
87A
6500
13" diameter plastic tape and reel
9
16
TM = 120 °C, RthJM = 4 °C/W
D = 0.8
8
14
D = 0.3
Average Power Loss (W)
Average Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
12
10
8
TA = 25 °C, RthJA = 70 °C/W
6
4
2
TM measured at cathode side
0
7
D = 0.5
D = 0.2
6
D = 1.0
D = 0.1
5
4
T
3
2
1
D = tp/T
tp
0
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
18
Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
(D = Duty Cycle = 0.5)
Fig. 2 - Forward Power Loss Characteristics
Revision: 04-Dec-13
Document Number: 89966
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V15PN50-M3
Vishay General Semiconductor
10 000
100
Junction Capacitance (pF)
Instantaneous Forward Current (A)
www.vishay.com
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 60 MHz
Vsig = 50 mVp-p
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.1
0.6
1
1000
TA = 150 °C
TA = 125 °C
TA = 100 °C
10
1
0.1
TA = 25 °C
0.01
20
40
60
80
50
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
100
100
10
Junction to Ambient
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 04-Dec-13
Document Number: 89966
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V15PN50-M3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-277A (SMPC)
0.187 (4.75)
0.175 (4.45)
0.016 (0.40)
0.006 (0.15)
K
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.047 (1.20)
0.039 (1.00)
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
Mounting Pad Layout
0.087 (2.20)
0.075 (1.90)
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.186 (4.72)
MIN.
0.268
(6.80)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.049 (1.24)
0.037 (0.94)
0.050 (1.27)
MIN.
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
0.041
(1.04)
0.055 (1.40)
MIN.
Conform to JEDEC TO-277A
Revision: 04-Dec-13
Document Number: 89966
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000