Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type Unit: mm 2.90+0.02 –0.05 For high-speed switching circuits 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 2 0.4±0.2 (0.65) 0.60+0.10 –0.05 Rating Unit VR 40 V Maximum peak reverse voltage VRM 40 V Forward current Single IF(AV) 100 mA (Average) Double Repetitive peak Single forward current Double Non-repetitive peak Single EAIJ: SC-61 75 225 mA Marking Symbol: M1D mA Internal Connection 1.1+0.3 –0.1 10˚ Symbol IFRM 1 (0.2) +0.2 0 to 0.1 1.1–0.1 Parameter 5˚ 0.5R ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage 4 2.8+0.2 –0.3 3 • Two isolated elements are contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • Short reverse recovery time trr • Small terminal capacitance Ct 1.50+0.25 –0.05 ■ Features 1: Cathode 1 2: Anode 2 3: Cathode 2 4: Anode 1 Mini4-G1 Package 170 IFSM 500 forward surge current * Double 375 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: t = 1 s 3 4 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Forward voltage VF IF = 100 mA Reverse voltage VR IR = 100 µA Reverse current IR VR = 35 V Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time * trr IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω Min Typ Max 0.95 1.20 40 Unit V V 0.9 0.1 µA 2.0 pF 3 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: November 2003 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKF00044AED 1 MA4X160 I R VR 102 10 10 Ta = 125°C 1 75°C 25°C −20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1 75°C 10−1 25°C 10−3 10 20 V 10−1 10−2 30 40 50 60 1 mA −40 0 160 10 20 30 40 120 160 IF(surge) tW 50 Reverse voltage VR (V) SKF00044AED 80 103 f = 1 MHz Ta = 25°C 0 40 Ambient temperature Ta (°C) Ta = 25°C IF(surge) 1 10−1 120 Ambient temperature Ta (°C) 2 20 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) VR = 40 V 80 3 mA 0.4 Ct VR 10 40 10 mA 0.1 mA 10 0 0.6 0 0 IR T a −40 0.8 Reverse voltage VR (V) 102 1 IF = 100 mA 0.2 Forward voltage VF (V) 10−3 1.0 Ta = 125°C 10−2 1.2 VF T a 1.2 Forward voltage VF (V) 102 Reverse current IR (µA) Forward current IF (mA) IF V F 103 60 tW Non repetitive 102 10 1 10−1 10−1 1 Pulse width tW (ms) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.