Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80 External Dimensions SOP8 Unit 0.7±0.2 µA µA V 5.4Max 8 0 to 10° 5 a b V V mJ c 6.2±0.3 A A W °C °C Symbol (Ta=25ºC) Ratings typ 0 to 0.1 d 1 4 +0.15 1.27±0.25 0.42 –0.05 +0.15 0.17 –0.05 (drain heatsink copper foil area 25•25mm) 5.0±0.2 1.5±0.2 *1: FR4 70mm•100mm• 1.6mm 0.5±0.2 Electrical Characteristics Unit V V V 4.4±0.2 Symbol Ratings VCBO 65±5 65±5 VCEO VEBO 6 IC 6 IC (pulse) 10 (Pw 1mS, Duty 25%) 10 IB 1.5 *1 PC Tj 150 Tstg –55 to +150 4.7Max Absolute Maximum Ratings (Ta=25ºC) a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm) ■ VCE (sat) — I C Temperature Characteristics (typ.) ■ IC — VCE Characteristics (typ.) 7 30mA (VCE = 1V) 6 IC/IB = 100 20mA 6 ■ IC — VBE Temperature Characteristics (typ.) 0.75 5 10mA 5mA 3 3mA 2 Ta = –55ºC 25ºC 75ºC 125ºC 0.25 0 1 2 3 4 Ta = 125ºC 75ºC 25ºC –55ºC 3 2 IB = 1mA 1 0 4 0.5 IC (A) IC (A) 4 VCE (sat) (V) 5 1 0 0 0.01 5 0.1 VCE (V) 1 0 10 0.5 ■ hFE — IC Temperature Characteristics (typ.) 1.5 ■ ton • tstg •t f — IC Characteristics (typ.) (VCE = 1V) 2000 1.0 VBE (V) IC (A) 5 tstg ton• tstg • tf (µS) 1000 hFE 500 Ta = 125ºC 75ºC 25ºC –55ºC 100 VCC = 12V IB1 = –IB2 = 30mA 1 0.5 tf ton 0.1 50 0.01 0.1 1 10 IC (A) ■ Safe Operating Area 0 1 2 3 IC (A) (Single pulse) Equivalent Circuit Diagram 20 0.5m 10 s s 10m s IC (A) 5, 6, 7, 8 1m 5 1 1 0.5 natural air cooling Without heatsink 2, 3, 4 0.1 1 5 10 50 100 VCE (V) 95