Power Transistor Array STA315A VCE (sat) VFEC RB RBE Es/b * PW 1ms, Duty 25% L = 10mH, single pulse (Ta=25ºC) Unit µA mA V External Dimensions STA3 (LF400A) 20.2±0.2 V V V Ω kΩ mJ b a 0.5±0.15 7•2.54=17.78±0.25 C1.5±0.5 Typical Switching Characteristics VCC (V) 12 30m A IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) 0 ton (µs) 1.0 2 B 4 B 5 C 6 B 7 C 8 E (Unit: mm) ■ VCE (sat) — IC Temperature Characteristics 3 IC/IB = 100 8mA 12 3 C a) Type No. b) Lot No. (IC = 0.5A) 0.5 A m 1 E tf (µs) 2.5 tstg (µs) 8.5 ■ VCE (sat) — IB Temperature Characteristics ■ IC — VCE Characteristics (typ.) 3 RL (Ω) 12 (2.54) 1.0±0.25 4.0±0.2 ICBO IEBO VCEO hFE Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800±120 2.0±0.4 50min 9.0±0.2 Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A 1.2±0.2 Tj Tstg Symbol 0.5±0.15 PT Unit V V V A mA W W ºC ºC 2.3±0.2 Ratings 35±5 36±5 6 2 (pulse 3*) 30 3 (Ta=25ºC) 13.5 (Tc=25ºC) 150 –55 to +150 11.3±0.2 Symbol VCBO VCEO VEBO IC IB 4.7±0.5 Electrical Characteristics Absolute Maximum Ratings (Ta=25ºC) 5mA IC (A) 3mA 2mA 1 IB = 1mA 2 3 4 5 1 6 10 0 0.5 500 Ta = 125ºC 75ºC 25ºC –40ºC 100 1 VCC = 12V IB = 5mA –IB = 0A tstg j-a — t Characteristics Single pulse 5 tf ton 1 0.5 4 10 5 1 0 0.5 1.0 1.5 2.0 1 10 Ic (A) IC (A) (per element) 5 100 1000 t (ms) ■ PT — Ta Derating ■ Safe Operating Area (single pulse) 5 20 10 0.1 0.5 ■ 50 ton • tstg • tf (µS) 1000 1 IC (A) ■ ton• tstg •t f — IC Characteristics (typ.) (VCE = 4V) 3000 0.1 0 400 IB (mA) ■ hFE — IC Temperature Characteristics 50 0.01 100 (ºC/W) 1 VCE (V) hFE 1 0 0 Ta = 125ºC 75ºC 25ºC –40ºC j-a 0 Ta = 125ºC 75ºC 25ºC –40ºC 0.25 2 VCE (sat) (V) VCE (sat) (V) 2 Equivalent Circuit Diagram 20 1m s 10 m s PT (W) IC (A) 3 1 0.5 W ith 10 inf ini te he at sin k 2 RB 5 4 7 6 RBE 1 Without heatsink natural air cooling Withou 0.1 1 5 10 VCE (V) 62 50 0 0 t heat sink 50 100 Ta (ºC) 150 8