Power Transistor Array STA463C External Dimensions STA4 (LF400B) 25.25 V V mJ ±0.2 ±0.2 b 9.0 ±0.2 (Ta=25ºC) Unit µA µA V ±0.2 ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Ratings 10max 10max 105 to 125 400 to 1500 0.12max 1.5max 45min 2.3 Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA IFEC = 6A L = 10mH, single pulse a (2.54) ±0.15 ±0.25 0.5 1.0 ±0.05 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 30 IB2 (mA) –30 t on (µs) 0.2 t stg (µs) 5.7 ±0.5 C1.5 tf (µs) 0.4 1 2 3 4 B C E 5 6 ±0.2 IC (A) 1 ±0.2 RL (Ω) 12 4.0 VCC (V) 12 ±0.15 9•2.54=22.86 Typical Switching Characteristics 1.2 Tj Tstg Symbol 0.5 PT Electrical Characteristics Unit V V V A A W W ºC ºC 11.3 Ratings 115±10 115±10 6 ±6 (pulse ±10) 1 3.2 (Ta=250ºC) 18 (Tc=25ºC) 150 –55 to +150 ±0.5 Symbol VCBO VCEO VEBO IC IB 4.7 Absolute Maximum Ratings (Ta=25ºC) 7 8 9 10 B C E a) Type No. b) Lot No. (Unit: mm) ■ IC — VCE Characteristics (typ.) ■ VCE (sat) — IC Temperature Characteristics (typ.) 20mA 6 10mA 5mA 4 3 3mA Ta = –55ºC 25ºC 75ºC 150ºC 0.25 4 3 2 2 1 IB = 1mA 1 0 1 2 3 4 5 0 0 0.01 6 0.1 (VCE = 4V) 2000 5 tstg 1 0.5 1.0 ton 0 10 1 2 Characteristics ■ VCE (sat) — IB Temperature Characteristics (typ.) 3 Single transistor operated 10 5 1 0.1 0.0001 0.001 0.01 0.1 1 10 t (s) ■ PT — Ta Derating (Tc = 25ºC) 20 0.75 Dual transistor operated Single pulse Ic (A) IC (A) 1.5 0.5 VCC = 12V IB1 = – IB2 = 30mA tf 0.1 1 j-a — t 100 50 (ºC/W) Ta = 150ºC 75ºC 25ºC –55ºC ■ j-a ton•tstg•tf (µS) 500 hFE 0.5 VBE (V) 10 1000 0.1 0 5 ■ ton• tstg • t f — IC Characteristics ■ hFE — IC Temperature Characteristics (typ.) 50 30 0.01 1 IC (A) VCE (V) 100 Ta = 150ºC 75ºC 25ºC –55ºC 5 0.5 IC (A) 30mA 6 VCE (sat) (V) 7 0 (VCE = 1V) 7 I C /IB = 100 5 IC (A) ■ IC — VBE Temperature Characteristics (typ.) 0.75 8 Equivalent Circuit Diagram 15 PT (W) nk si at he 0.25 8 ite fin in 0.5 Ta = 150ºC 75ºC 25ºC –55ºC 3 ith W VCE (sat) (V) IC = 1.2A 10 2 7 5 Withou 0 1 10 100 IB (mA) 66 1000 0 0 t heat 4 sink 50 100 Ta (ºC) 150 9 100 1000