Switching Diodes MA4X159A Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 ■ Features 0.4 − 0.05 1.45 1.5 − 0.05 Reverse voltage (DC) Repetitive peak reverse voltage Rating Unit VR 80 V VRRM 80 V Single IF(AV) 100 mA IF(AV) 75 mA/Unit Repetitive peak forward current Single IFRM 225 mA Double IFRM 170 mA/Unit Non-repetitive peak forward surge current* Single IFSM 500 mA Double IFSM 375 mA/Unit Tj 150 °C Tstg −55 to +150 °C 0.95 0.5 0.4 − 0.05 2 + 0.1 0.16 − 0.06 0.6 − 0 0.2 + 0.1 + 0.1 0.8 0.1 to 0.3 Double Storage temperature 3 0.4 ± 0.2 Average forward current Junction temperature 1 0 to 0.1 Symbol 4 0.95 + 0.2 2.9 − 0.05 + 0.2 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.9 ± 0.2 0.5 R • Two isolated elements contained in one package, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance, Ct 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1B Internal Connection Note) * : t = 1 s 4 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Reverse current (DC) IR VR = 75 V Forward voltage (DC) VF IF = 100 mA Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Typ Max Unit 0.1 µA 0.95 1.2 V 0.9 2 pF 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA4X159A Switching Diodes 10 10 Ta = 125°C 75°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 1 75°C 10−1 25°C 10−2 10−3 1.2 1.0 Ta = 125°C Forward voltage VF (V) 102 1 VF Ta IR V R 102 Reverse current IR (µA) Forward current IF (mA) IF V F 103 0 20 IR T a 40 60 80 100 40 V 10−1 10−2 0 160 40 80 120 160 IF(surge) tW 1 000 f = 1 MHz Ta = 25°C 3 2 1 0.5 0.3 0.1 120 Ambient temperature Ta (°C) 2 −40 Ambient temperature Ta (°C) 0.2 80 0 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) Reverse current IR (µA) VR = 80 V 40 1 mA 0.1 mA 120 5 10 0 3 mA 0.4 Ct VR 10 −40 10 mA 0.6 Reverse voltage VR (V) 102 10−3 0.8 0.2 Forward voltage VF (V) 1 IF = 100 mA Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0 10 20 30 40 50 Reverse voltage VR (V) 60 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30