Switching Diodes MA6X124 Silicon epitaxial planar type Unit : mm + 0.25 0.65 ± 0.15 0.65 ± 0.15 1 3 + 0.1 0.16 − 0.06 4 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1 2 IF 100 mA Peak forward current*1 IFM 225 mA Non-repetitive peak forward surge current*1,2 IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 5 0.8 + 0.2 2.9 − 0.05 + 0.2 1.1 − 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density mounting • Centrosymmetrical wiring, allowing to free from the taping direction • Short reverse recovery time trr • Small terminal capacitance, Ct + 0.1 ■ Features 1.5 − 0.05 1.45 2.8 + 0.2 − 0.3 0.3 − 0.05 For switching circuit 1 : Anode 1 4 : Anode 3 2 : Cathode 1,2,3,4 5 : Cathode 1,2,3,4 3 : Anode 2 6 : Anode 4 Mini Type Package (6-pin) Marking Symbol: M2C Internal Connection Note) *1 : Value for single diode *2 : t = 1 s 6 1 5 2 4 3 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA6X124 Switching Diodes IF VF IR V R 1 000 105 100 104 VF Ta 1.6 Ta = 150°C 10 100°C 25°C − 20°C 1 0.1 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) 1.4 Ta = 150°C 100°C 103 102 25°C 10 1.2 IF = 100 mA 1.0 0.8 10 mA 0.6 3 mA 0.4 0.2 0.01 0 0.2 0.4 0.6 0.8 1.0 0 Forward voltage VF (V) 20 IR Ta 60 80 100 120 103 102 10 f = 1 MHz Ta = 25°C 1.4 40 80 120 160 Ambient temperature Ta (°C) 2 200 1.2 1.0 0.8 0.6 0.4 0 0 20 40 60 80 120 160 200 IF(surge) tW 0.2 0 40 1 000 Forward surge current IF(surge) (A) VR = 75 V 35 V 1V 1 −40 0 Ambient temperature Ta (°C) Ct VR 1.6 Terminal capacitance Ct (pF) Reverse current IR (nA) 40 Reverse voltage VR (V) 105 104 0 –40 1 1.2 80 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30